MCDA500-14IO1_技术文档

Date: 17.03.2005

IXYS

Data Sheet Issue: 2

Thyristor/Diode Modules M## 500

Absolute Maximum Ratings

V_RRM

V_DRM

[V]

MCC

MCD

MDC

MCA

MCK

MCDA

MDCA

1200

1400

1600

1800

500-12io1

500-14io1

500-16io1

500-18io1

500-12io1

500-14io1

500-16io1

500-18io1

500-12io1

500-14io1

500-16io1

500-18io1

500-12io1

500-14io1

500-16io1

500-18io1

500-12io1

500-14io1

500-16io1

500-18io1

500-12io1

500-14io1

500-16io1

500-18io1

500-12io1

500-14io1

500-16io1

500-18io1

MAXIMUM

LIMITS

1200-1800

1300-1900

VOLTAGE RATINGS

UNITS

V_DRM

Repetitive peak off-state voltage ¹⁾

Non-repetitive peak off-state voltage ¹⁾

Repetitive peak reverse voltage ¹⁾

Non-repetitive peak reverse voltage ¹⁾

V

V_DSM

V_RRM

V_RSM

MAXIMUM

LIMITS

OTHER RATINGS

UNITS

I_T(AV)M

Maximum average on-state current, T_C= 89°C ²⁾

Maximum average on-state current. T_C= 85°C ²⁾

500

A

545

Maximum average on-state current. T_C= 100°C ²⁾

376

A

I_T(RMS)MNominal RMS on-state current, T_C= 55°C ²⁾

1294

1029

16.5

A

I_T(d.c.)

I_TSM

I_TSM2

I²t

D.C. on-state current, T_C= 55°C

A

3)

Peak non-repetitive surge t_p= 10 ms, V_RM= 60%V_RRM

Peak non-repetitive surge t_p= 10 ms, V_RM≤ 10V ³⁾

kA

A²s

A/µs

V

18.2

I²t capacity for fusing t_p= 10 ms, V_RM= 60%V_RRM

1.36×10⁶

1.66×10⁶

150

3)

I²t

I²t capacity for fusing t_p= 10 ms, V_RM≤ 10 V ³⁾

Critical rate of rise of on-state current (repetitive) ⁴⁾

(di/dt)_cr

Critical rate of rise of on-state current (non-repetitive) ⁴⁾

Peak reverse gate voltage

300

V_RGM

P_G(AV)

P_GM

5

Mean forward gate power

4

W

Peak forward gate power

Isolation Voltage ⁵⁾

30

W

V_ISOL

T_{Vj op}

T_stg

3500

-40 to +125

-40 to +150

V

Operating temperature range

Storage temperature range

°C

Notes:

1) De-rating factor of 0.13% per °C is applicable for Tv_jbelow 25°C.

2) Single phase; 50 Hz, 180° half-sinewave.

3) Half-sinewave, 125°C T_vjinitial.

4) V_D= 67% V_DRM, I_FG= 2 A, t_r≤ 0.5µs, T_C= 125°C.

5) AC RMS voltage, 50 Hz, 1min test

Rating Report. Types M##500-12io1 and M##500-18io1 Issue 2

Page 1 of 11

March, 2005

IXYS

Thyristor/Diode Module Types M##500-12io1 and M##500-18io1

Thyristor Characteristics

PARAMETER

MIN. TYP. MAX. TEST CONDITIONS ¹⁾

UNITS

V_TM

Maximum peak on-state voltage

Threshold voltage

-

1.5 I_TM= 1700 A

1.43 I_TM= 1500 A

0.85

V

V_TM

V_T0

r_T

-

V

Slope resistance

-

0.27

mΩ

V/µs

mA

V

(dv/dt)_crCritical rate of rise of off-state voltage 1000

-

V_D= 80% V_DRM, linear ramp, Gate o/c

I_DRM

I_RRM

V_GT

I_GT

I_H

Peak off-state current

Peak reverse current

-

70 Rated V_DRM

70 Rated V_RRM

3.0

-

Gate trigger voltage

-

T_vj= 25°C, V_D= 10 V, I_T= 3 A

Gate trigger current

300

mA

Holding current

-

1000 T_vj= 25°C

t_gd

Gate controlled turn-on delay time

Turn-on time

0.6

1.2

2200

1.5

2.5

-

I_FG= 2 A, t_r= 0.5 µs, V_D= 67%V_DRM

,

µs

I

_TM= 2000 A, di/dt = 10 A/µs, T_vj= 25°C

t_gt

Q_rr

Q_ra

I_rm

Recovered Charge

µC

A

Recovered Charge, 50% chord

Reverse recovery current

Reverse recovery time, 50% chord

1600 1900

I

_TM= 1000 A, t_p= 1 ms, di/dt = 10A/µs,

V_R= 50 V

120

25

-

t_rr

µs

I_TM= 1000 A, t_p= 1 ms, di/dt = 10 A/µs,

V_R= 50 V, V_DR= 80%V_DRM, dv_DR/dt = 20 V/µs

I_TM= 1000 A, t_p= 1 ms, di/dt = 10 A/µs,

V_R= 50 V, V_DR= 80%V_DRM, dv_DR/dt = 200 V/µs

-

200

300

-

t_q

Turn-off time

µs

-

0.062 Single Thyristor

0.031 Whole Module

0.02 Single Thyristor

0.01 Whole Module

5.75

K/W

Nm

kg

R_thJC

Thermal resistance, junction to case

Thermal resistance, case to heatsink

-

R_thCH

-

F₁

F₂

W_t

Mounting force (to heatsink)

Mounting force (to terminals)

Weight

4.25

10.2

-

2)

-

13.8

1.5

-

Diode Characteristics

PARAMETER

MIN. TYP. MAX. TEST CONDITIONS ¹⁾

UNITS

V_FM

Maximum peak forward voltage

Threshold voltage

-

0.98 I_TM= 1800 A

V

V_T0

r_T

-

0.72

Slope resistance

-

0.143

mΩ

mA

µC

A

I_RRM

Q_rr

Q_ra

I_RM

t_rr

Peak reverse current

50 Rated V_RRM

-

Recovered Charge

2200

Recovered Charge, 50% chord

Reverse recovery current

Reverse recovery time, 50% chord

1800 2250

I_TM= 1000 A, t_p= 1ms, di/dt = 10 A/µs,

V_R= 50 V

145

25

-

µs

Notes:

1) Unless otherwise indicated T_vj=125°C.

2) Screws must be lubricated

Rating Report. Types M##500-12io1 and M##500-18io1 Issue 2

Page 2 of 11

March, 2005

IXYS

Thyristor/Diode Module Types M##500-12io1 and M##500-18io1

Notes on Ratings and Characteristics

1.0 Voltage Grade Table

V

_DRMV_DSMV_RRM

V_RSM

V

V_DV_R

DC V

820

Voltage Grade

V

12

14

16

18

1200

1400

1600

1800

1300

1500

1700

1900

930

1040

1150

2.0 Extension of Voltage Grades

This report is applicable to other voltage grades when supply has been agreed by Sales/Production.

3.0 De-rating Factor

A blocking voltage de-rating factor of 0.13%/°C is applicable to this device for T_vjbelow 25°C.

4.0 Repetitive dv/dt

Standard dv/dt is 1000V/µs.

5.0 Snubber Components

When selecting snubber components, care must be taken not to use excessively large values of snubber

capacitor or excessively small values of snubber resistor. Such excessive component values may lead to

device damage due to the large resultant values of snubber discharge current. If required, please consult

the factory for assistance.

6.0 Rate of rise of on-state current

The maximum un-primed rate of rise of on-state current must not exceed 300A/µs at any time during turn-

on on a non-repetitive basis. For repetitive performance, the on-state rate of rise of current must not

exceed 150A/µs at any time during turn-on. Note that these values of rate of rise of current apply to the

total device current including that from any local snubber network.

7.0 Gate Drive

The nominal requirement for a typical gate drive is illustrated below. An open circuit voltage of at least 30V

is assumed. This gate drive must be applied when using the full di/dt capability of the device.

I_GM

4A/µs

I_G

t_p1

The magnitude of I_GMshould be between five and ten times I_GT, which is shown on page 2. Its duration

(t_p1) should be 20µs or sufficient to allow the anode current to reach ten times I_L, whichever is greater.

Otherwise, an increase in pulse current could be needed to supply the necessary charge to trigger. The

‘back-porch’ current I_Gshould remain flowing for the same duration as the anode current and have a

magnitude in the order of 1.5 times I_GT.

Rating Report. Types M##500-12io1 and M##500-18io1 Issue 2

Page 3 of 11

March, 2005

IXYS

Thyristor/Diode Module Types M##500-12io1 and M##500-18io1

8.0 Computer Modelling Parameters

8.1 Thyristor Dissipation Calculations

∆T

R_th

2

−V_{T 0}+ V_{T 0}+ 4⋅ ff ²⋅r ⋅W_AV

W_AV=

T

I_AV=

and:

2⋅ ff ²⋅r

T

∆T = T_{j max}−T_K

Where V_T0= 0.85 V, r_T= 0.27 mΩ for the thyristor and V_T0= 0.72 V, r_T= 0.143 mΩ for the diode.

R_th= Supplementary thermal impedance, see table below and

ff = Form factor, see table below.

Supplementary Thermal Impedance

Conduction Angle

Square wave

Sine wave

30°

60°

90°

120°

180°

270°

d.c.

0.062

0.07067 0.06791 0.06629 0.06525 0.06395 0.06277

0.06767 0.06536 0.06408 0.0633

Form Factors

0.062

Conduction Angle

Square wave

Sine wave

30°

3.464

3.98

60°

2.449

2.778

90°

2

2.22

120°

1.732

1.879

180°

1.414

1.57

270°

1.149

d.c.

1

8.2 Calculating thyristor V_Tusing ABCD Coefficients

The on-state characteristic I_Tvs. V_T, on page 6 is represented in two ways;

(i) the well established V_T0and r_Ttangent used for rating purposes and

(ii) a set of constants A, B, C, D, forming the coefficients of the representative equation for V_Tin terms of

I_Tgiven below:

V_T= A + B ⋅ln

(

I_T+ C ⋅ I_T+ D ⋅ I_T

)

The constants, derived by curve fitting software, are given below for both hot and cold characteristics. The

resulting values for V_Tagree with the true device characteristic over a current range, which is limited to

that plotted.

25°C Coefficients

125°C Coefficients

A

B

C

D

0.7860338

A

B

C

D

-0.099137717

0.1987038

9.929062×10^-3

1.94704×10^-4

7.409213×10^-3

4.23812×10^-4

-0.01453705

Rating Report. Types M##500-12io1 and M##500-18io1 Issue 2

Page 4 of 11

March, 2005

IXYS

Thyristor/Diode Module Types M##500-12io1 and M##500-18io1

8.3 D.C. Thermal Impedance Calculation

−t

τ _p

p=n









r = r ⋅ 1− e

∑

t

p





p=1





Where p = 1 to n

n =

number of terms in the series and

t

= Duration of heating pulse in seconds.

= Thermal resistance at time t.

= Amplitude of p_thterm.

r_t

r_p

τ_p

= Time Constant of r_thterm).

The coefficients for this device are shown in the tables below:

D.C.

Term

1

2

3

4

0.05428

2.69428

4.4894×10^-3

2.3382×10^-3

8.759×10^-4

1.435×10^-3

r_p

τ_p

0.126017

0.013878

9.0 Reverse recovery ratings

(i) Q_rais based on 50% I_RMchord as shown in Fig. 1

Fig. 1

(ii) Q_rris based on a 150 µs integration time i.e.

150µs

Q_rr= i_rr.dt

∫

0

(iii)

t₁

t₂

K Factor =

Rating Report. Types M##500-12io1 and M##500-18io1 Issue 2

Page 5 of 11

March, 2005

IXYS

Thyristor/Diode Module Types M##500-12io1 and M##500-18io1

Thyristor Curves

Figure 1 - On-state characteristics of Limit device

Figure 2 - Transient thermal impedance

0.1

10000

M##500-12io1-18io1

Issue 2

Single Thyristor

M##500-12io1-18io1

Issue 2

T_j= 25°C

T_j= 125°C

0.01

1000

0.001

0.0001

100

0.00001

0.00001 0.0001 0.001

0.5

1

1.5

2

2.5

3

3.5

0.01

0.1

1

10

100

Instantaneous On-state voltage - V_TM(V)

Time (s)

Figure 3 - Gate characteristics - Trigger limits

Figure 4 - Gate characteristics - Power curves

35

8

M##500-12io1-18io1

Issue 2

T_j=25°C

7

30

6

Max V_Gdc

25

5

20

15

4

3

2

I_GT, V_GT

P_GMax 30W dc

10

P_G4W dc

5

1

Min V_Gdc

0.8

I_GD, V_GD

Min V_Gdc

0

2

4

6

8

10

0

0.2

0.4

0.6

1

Gate Trigger Current - I_GT(A)

Rating Report. Types M##500-12io1 and M##500-18io1 Issue 2

Page 6 of 11

March, 2005

IXYS

Thyristor/Diode Module Types M##500-12io1 and M##500-18io1

Figure 5 - Total recovered charge, Q_rr

Figure 6 - Recovered charge, Q_ra(50% chord)

10000

M##500-12io1-18io1

Issue 2

T_j=125°C

2000A

1500A

1000A

500A

2000A

1500A

1000A

500A

1000

1

10

100

1000

1

10

100

1000

di/dt (A/µs)

Figure 7 - Peak reverse recovery current, I_rm

Figure 8 - Maximum recovery time, t_rr(50% chord)

100

1000.00

M##500-12io1-18io1

2000A

M##500-12io1-18io1

Issue 2

1500A

1000A

500A

T_j=125°C

10

2000A

1500A

1000A

500A

1

100.00

1

10

100

1000

1

10

100

1000

di/dt (A/µs)

Rating Report. Types M##500-12io1 and M##500-18io1 Issue 2

Page 7 of 11

March, 2005

IXYS

Thyristor/Diode Module Types M##500-12io1 and M##500-18io1

Figure 9 - On-state current vs. Power dissipation

- Sine wave

Figure 10 - On-state current vs. Heatsink

temperature - Sine wave

1800

140

M##500-12io1-18io1

Issue 2

180°

120°

1600

1400

1200

1000

800

600

400

200

0

90°

60°

120

30°

100

80

60

40

30°

60°

600

90° 120° 180°

20

0

200

400

800

1000

0

200

400

600

800

1000

Mean forward current (A) (Whole cycle averaged)

Figure 11 - On-state current vs. Power dissipation

- Square wave

Figure 12 - On-state current vs. Heatsink

temperature - Square wave

1800

140

M##500-12io1-18io1

Issue 2

1600

120

100

80

60

40

20

0

1400

1200

d.c.

1000

270°

180°

120°

90°

800

60°

30°

600

400

200

0

30°

60° 90° 120° 180° 270° d.c.

0

200

400

600

800

1000

1200

1400

0

200

400

600

800

1000

1200

1400

Mean Forward Current (Amps) (Whole Cycle Averaged)

Rating Report. Types M##500-12io1 and M##500-18io1 Issue 2

Page 8 of 11

March, 2005

IXYS

Thyristor/Diode Module Types M##500-12io1 and M##500-18io1

Figure 13 - Maximum surge and I²t Ratings

Gate may temporarily lose control of conduction angle

100000

10000

1000

1.00E+07

I²t: V_RRM≤10V

I²t: 60% V_RRM

1.00E+06

I_TSM: V_RRM≤10V

I_TSM: 60% V_RRM

T_j(initial) = 125°C

M##500-12io1-18io1

Issue 2

1.00E+05

1

3

5

10

1

5

10

50 100

Duration of surge (ms)

Duration of surge (cycles @ 50Hz)

Diode curves

Figure 14 - Instantaneous forward voltage V_F

Figure 15 - Transient thermal impedance

0.1

10000

Single Diode

M##500-12io1-18io1

Issue 2

M##500-12io1-18io1

Issue 2

25°C

125°C

0.01

0.001

1000

0.0001

0.00001

100

0.000001

0

0.5

1

1.5

2

1E-05 0.0001 0.001 0.01

0.1

1

10

100

Maximum instantaneous forward voltage - V_FM(V)

Time (s)

Rating Report. Types M##500-12io1 and M##500-18io1 Issue 2

Page 9 of 11

March, 2005

IXYS

Thyristor/Diode Module Types M##500-12io1 and M##500-18io1

Figure 16 - Total recovered charge, Q_rr

Figure 17 - Recovered charge, Q_ra(50% chord)

10000

M##500-12io1-18io1

Issue 2

T_j=125°C

2000A

1500A

1000A

500A

2000A

1500A

1000A

500A

1000

1

10

100

1000

1

10

100

1000

di/dt (A/µs)

Figure 18 - Peak reverse recovery current, I_rm

Figure 19 - Maximum recovery time, t_rr(50% chord)

100

10000.00

M##500-12io1-18io1

Issue 2

T_j=125°C

M##500-12io1-18io1

Issue 2

T_j=125°C

2000A

1500A

1000A

500A

10

1000.00

2000A

1500A

1000A

500A

1

100.00

1

10

100

1000

1

10

100

1000

di/dt (A/µs)

Rating Report. Types M##500-12io1 and M##500-18io1 Issue 2

Page 10 of 11

March, 2005

IXYS

Thyristor/Diode Module Types M##500-12io1 and M##500-18io1

Outline Drawing & Ordering Information

3

6 7 1

5 4 2

2

MCC

MCD

MDC

MCA

3

1

6 7 1

1

3

3 7 6

5 4 2

3

6 7 1 4 5

2

5 4 2

2

MCK

MCDA

MDCA

3

1

3 7 6

ORDERING INFORMATION

(Please quote 11 digit code as below)

ꢀꢀ

M

##

500

io

1

Configuration code

CC, CD, DC, CA, CK,

CDA, DCA

Voltage code

V_RRM/100

12-18

Fixed

Average Current

Rating

i = Critical dv/dt 1000 V/µs

o = Typical turn-off time

Fixed

Type Code

Version Code

Order code: MCD500-14io1– MCD configuration, 1400V V_RRM

IXYS Semiconductor GmbH

Edisonstraße 15

Westcode Semiconductors Ltd

Langley Park Way, Langley Park,

Chippenham, Wiltshire, SN15 1GE.

Tel: +44 (0)1249 444524

D-68623 Lampertheim

Tel: +49 6206 503-0

IXYS

Fax: +49 6206 503-627

E-mail: marcom@ixys.de

Fax: +44 (0)1249 659448

E-mail: WSL.sales@westcode,com

www.ixys.com

IXYS Corporation

Westcode Semiconductors Inc

3270 Cherry Avenue

3540 Bassett Street

Santa Clara CA 95054 USA

Tel: +1 (408) 982 0700

Fax: +1 (408) 496 0670

E-mail: sales@ixys.net

Long Beach CA 90807 USA

Tel: +1 (562) 595 6971

Fax: +1 (562) 595 8182

WESTCODE

E-mail: WSI.sales@westcode.com

An IXYS Company

www.westcode.com

The information contained herein is confidential and is protected by Copyright. The information may not be used or disclosed

except with the written permission of and in the manner permitted by the proprietors IXYS Semiconductors GmbH.

In the interest of product improvement, IXYS reserves the right to change specifications at any time without prior notice.

Devices with a suffix code (2-letter, 3-letter or letter/digit/letter combination) added to their generic code are not necessarily

subject to the conditions and limits contained in this report.

Rating Report. Types M##500-12io1 and M##500-18io1 Issue 2

Page 11 of 11

March, 2005


型号：	MCDA500-14IO1
厂家：	LITTELFUSE
描述：	Silicon Controlled Rectifier, 1294A I(T)RMS, 1400V V(DRM), 1400V V(RRM), 1 Element, MODULE-5 局域网栅栅极
文件：	总11页 (文件大小：447K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

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