MDA1080-28N7 [LITTELFUSE]

Rectifier Diode,;


型号：	MDA1080-28N7
厂家：	LITTELFUSE
描述：	Rectifier Diode,
文件：	总10页 (文件大小：607K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

Date: 13^thMar 2013

Data Sheet Issue: 1

IXYS

Diode Modules MD#1080

Absolute Maximum Ratings

V_RRM

V_DRM

[V]

1800

2400

2800

1080-18N7

1080-24N7

1080-28N7

1080-18N7

1080-24N7

1080-28N7

1080-18N7

1080-24N7

1080-28N7

MAXIMUM

UNITS

VOLTAGE RATINGS

LIMITS

V_RRM

Repetitive peak reverse voltage ¹⁾

1800-2800

1900-2900

V_RSM

Non-repetitive peak reverse voltage ¹⁾

MAXIMUM

LIMITS

OTHER RATINGS

UNITS

I_F(AV)M

Maximum average forward current, T_C= 85°C ²⁾

Maximum average forward current. T_C= 100°C ²⁾

1080

887

I_F(RMS)MNominal RMS forward current, T_C= 55°C ²⁾

2235

I_F(d.c.)

I_FSM

I_FSM2

I²t

D.C. forward current, T_C= 55°C

1788

Peak non-repetitive surge t_p= 10 ms, V_RM= 60%V_RRM

Peak non-repetitive surge t_p= 10 ms, V_RM£ 10V ³⁾

29.1

32.0

I²t capacity for fusing t_p= 10 ms, V_RM= 60%V_RRM

4.23×10³

5.12×10³

200

kA²s

A/µs

I²t

I²t capacity for fusing t_p= 10 ms, V_RM£ 10 V ³⁾

Critical rate of rise of on-state current (repetitive) ⁴⁾

(di/dt)_cr

Critical rate of rise of on-state current (non-repetitive) ⁴⁾

Isolation Voltage ⁵⁾

400

V_ISOL

T_{vj op}

T_stg

3000

Operating temperature range

-40 - +150

-40 - +130

°C

Storage temperature range

°C

Notes:

1) De-rating factor of 0.13% per °C is applicable for T_vjbelow 25°C.

2) Single phase; 50 Hz, 180° half-sinewave.

3) Half-sinewave, 150°C T_vjinitial.

4) V_D= 67% V_DRM, I_FG= 2 A, t_r£ 0.5µs, T_C= 150°C.

5) AC RMS voltage, 50 Hz, 1min test

Rating Report. Types MD#1080-18N7 and MD#xxx-28N7 Issue 1

Page 1 of 9

March 2013

IXYS

Diode Module Types MD#1080-18N7 to MD#1080-28N7

Characteristics

PARAMETER

MIN. TYP. MAX. TEST CONDITIONS ¹⁾

UNITS

V_FM

V_T0

r_T

Maximum peak forward voltage

Threshold voltage

0.95 I_FM= 1080A, T_vj= T_vjMAX

1.29 I_FM= 3240A, T_vj= T_vjMAX

0.782

0.157

Slope resistance

µC

I_RRM

Q_rr

Q_ra

I_rm

Peak reverse current

4000

3300

205

Rated V_RRM

Recovered Charge

Recovered Charge, 50% chord

Reverse recovery current

Reverse recovery time, 50% chord

I_FM= 1000A, di/dt = 10A/µs,

V_R= 100 V

t_rr

µs

0.050 Single Diode

0.025 Whole Module

0.016 Single Diode

0.008 Whole Module

9.00

K/W

R_thJC

Thermal resistance, junction to case

Thermal resistance, case to heatsink

R_thCH

F₁

F₂

W_t

Mounting force (to heatsink)

Mounting force (to terminals)

Weight

18.00

3.5

Notes:

1) Unless otherwise indicated T_vj=150°C.

2) Screws must be lubricated.

Rating Report. Types MD#1080-18N7 and MD#xxx-28N7 Issue 1

Page 2 of 9

March 2013

IXYS

Diode Module Types MD#1080-18N7 to MD#1080-28N7

Notes on Ratings and Characteristics

1.0 Voltage Grade Table

V_RRM

V_RSM

1900

2500

2900

V_R

Voltage Grade

DC V

1350

1800

2100

1800

2400

2800

2.0 Extension of Voltage Grades

This report is applicable to other voltage grades when supply has been agreed by Sales/Production.

3.0 De-rating Factor

A blocking voltage de-rating factor of 0.13%/°C is applicable to this device for T_vjbelow 25°C.

4.0 Snubber Components

When selecting snubber components, care must be taken not to use excessively large values of snubber

capacitor or excessively small values of snubber resistor. Such excessive component values may lead to

device damage due to the large resultant values of snubber discharge current. If required, please consult

the factory for assistance.

5.0 Computer Modelling Parameters

5.1 Diode Dissipation Calculations

-V_{T 0}+ V_{T 0}+ 4× ff ²×r ×W_AV

W_AV=

R_th

I_AV=

and:

2× ff ²×r

DT = T_{j max}-T_K

Where V_T0= 0.782 V, r_T= 0.157 mW.

R_th= Supplementary thermal impedance, see table below and

ff = Form factor, see table below.

Supplementary Thermal Impedance

Conduction Angle

Square wave

Sine wave

30°

60°

90°

120°

180°

270°

d.c.

0.0595

0.0536

0.0561

0.0527

0.0547

0.0522

0.0537

0.0518

0.0525

0.0500

0.0511

0.0500

Form Factors

90°

Conduction Angle

Square wave

Sine wave

30°

3.464

3.98

60°

120°

1.732

1.879

180°

1.414

1.57

270°

d.c.

2.449

2.778

1.149

2.22

Rating Report. Types MD#1080-18N7 and MD#xxx-28N7 Issue 1

Page 3 of 9

March 2013

IXYS

Diode Module Types MD#1080-18N7 to MD#1080-28N7

5.2 Calculating diode V_Fusing ABCD Coefficients

The on-state characteristic I_Fvs. V_F, on page 6 is represented by a set of constants A, B, C, D, forming

the coefficients of the representative equation for V_Fin terms of I_Fgiven below:

V_F= A + B ×ln

(

I_F+ C × I_F+ D × I_F

)

The constants, derived by curve fitting software, are given below for both hot and cold characteristics.

The resulting values for V_Fagree with the true device characteristic over a current range, which is limited

to that plotted.

25°C Coefficients

150°C Coefficients

7.498609E-01

4.491977E-02

1.266823E-04

-2.353395E-03

4.871119E-01

4.816888E-02

1.411432E-04

-7.437492E-04

Rating Report. Types MD#1080-18N7 and MD#xxx-28N7 Issue 1

Page 4 of 9

March 2013

IXYS

Diode Module Types MD#1080-18N7 to MD#1080-28N7

5.3 D.C. Thermal Impedance Calculation

-t

p=n

t _p

r = r × 1- e

p=1

Where p = 1 to n and:

n = number of terms in the series

t = Duration of heating pulse in seconds

r_t= Thermal resistance at time t

r_p= Amplitude of p_thterm

= Time Constant of r_thterm

t_p

The coefficients for this device are shown in the table below:

D.C.

Term

r_p

0.00348

0.2289

0.02506

8.474

0.009643

1.110

0.009712

0.04529

0.001719

0.009524

0.0004399

0.0002414

t_p

6.0 Reverse recovery ratings

(i) Q_rais based on 50% I_RMchord as shown in Fig. 1

Fig. 1

(ii) Q_rris based on a 150 µs integration time i.e.

150µs

Q_rr= i_rr.dt

(iii)

t₁

K Factor =

t₂

Rating Report. Types MD#1080-18N7 and MD#xxx-28N7 Issue 1

Page 5 of 9

March 2013

IXYS

Diode Module Types MD#1080-18N7 to MD#1080-28N7

Curves

Figure 1 – Forward characteristics of Limit device

10000

MD#1080-18N7-28N7

Issue 1

T_j= 150 C

T_j= 25 C

1000

100

0.0

0.2

0.4

0.6

0.8

1.0

1.2

1.4

1.6

1.8

2.0

Instantaneous forward voltage - V_FM(V)

Figure 2 – Maximum surge and I²t Ratings

Gate may temporarily lose control of conduction angle

100000

10000

1000

1.00E+08

I²t: V_RRM£10V

I²t: 60% V_RRM

I_TSM: V_RRM£10V

1.00E+07

I_TSM: 60% V_RRM

T_j(initial) = 150 C

MD#1080-18N7-28N7

Issue 1

1.00E+06

50 100

Duration of surge (ms)

Duration of surge (cycles @ 50Hz)

Rating Report. Types MD#1080-18N7 and MD#xxx-28N7 Issue 1

Page 6 of 9

March 2013

IXYS

Diode Module Types MD#1080-18N7 to MD#1080-28N7

Figure 3 – Recovered charge, Q_rr

Figure 4 – Recovered charge, Q_ra(50% Chord)

100000

MD#1080-18N7-28N7

Issue 1

T_j=150 C

1000A

10000

1000

100

1000

100

1000

di/dt (A/µs)

Figure 5 – Reverse recovery current, I_rm

Figure 6 – Reverse recovery time, t_rr

100

10000

MD#1080-18N7-28N7

Issue 1

T_j=150 C

1000A

1000

100

1000A

100

1000

100

1000

di/dt (A/µs)

Rating Report. Types MD#1080-18N7 and MD#xxx-28N7 Issue 1

Page 7 of 9

March 2013

IXYS

Diode Module Types MD#1080-18N7 to MD#1080-28N7

Figure 7 – On-state current vs. Power

dissipation – Sine wave

Figure 8 – On-state current vs. case temperature –

Sine wave

3000

160

MD#1080-18N7-28N7

Issue 1

140

d.c.

2500

½ wave

3ø

120

100

6ø

2000

1500

1000

500

3ø

½ wave

d.c.

6ø

500

1000

1500

2000

2500

500

1000

1500

2000

2500

Mean Forward Current (A) (Whole cycle averaged)

Mean forward current (A) (Whole cycle averaged)

Figure 9 – Transient thermal impedance

1.00E-01

MD#1080-18N7-28N7

Issue 1

Single Thyristor

1.00E-02

1.00E-03

1.00E-04

0.0001

0.001

0.01

0.1

100

Time (s)

Rating Report. Types MD#1080-18N7 and MD#xxx-28N7 Issue 1

Page 8 of 9

March 2013

IXYS

Diode Module Types MD#1080-18N7 to MD#1080-28N7

Outline Drawing & Ordering Information

150A124

ORDERING INFORMATION

(Please quote 11 digit code as below)

1080

Voltage code

V_RRM/100

18-28

Fixed

Type Code

Configuration code

DD, DA or DK

Fixed

Type Code

Fixed

Version Code

Standard Diode

Typical order code: MDD1080-18N7– MDD configuration, 1800V V_RRM

IXYS Semiconductor GmbH

Edisonstraße 15

D-68623 Lampertheim

Tel: +49 6206 503-0

Fax: +49 6206 503-627

E-mail: marcom@ixys.de

IXYS UK Westcode Ltd

Langley Park Way, Langley Park,

Chippenham, Wiltshire, SN15 1GE.

Tel: +44 (0)1249 444524

IXYS

Fax: +44 (0)1249 659448

E-mail: sales@ixysuk.com

www.ixys.com

IXYS Corporation

1590 Buckeye Drive

Milpitas CA 95035 7418 USA

Tel: +1 (408) 547 9000

Fax: +1 (408) 496 0670

E-mail: sales@ixys.net

IXYS Long Beach, Inc

2500 Mira Mar Ave, Long Beach

CA 90815

Tel: +1 (562) 296 6584

Fax: +1 (562) 296 6585

E-mail: service@ixyslongbeach.com

www.ixysuk.com

The information contained herein is confidential and is protected by Copyright. The information may not be used or disclosed

except with the written permission of and in the manner permitted by the proprietors IXYS Semiconductors GmbH.

In the interest of product improvement, IXYS reserves the right to change specifications at any time without prior notice.

Rating Report. Types MD#1080-18N7 and MD#xxx-28N7 Issue 1

Page 9 of 9

March 2013

Disclaimer Notice - Information furnished is believed to be accurate and reliable. However, users should independently

evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for,

and may not be used in, all applications. Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics.

MDA1080-28N7 [LITTELFUSE]

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