MDC700-14IO1W [LITTELFUSE]
Silicon Controlled Rectifier,;型号: | MDC700-14IO1W |
厂家: | LITTELFUSE |
描述: | Silicon Controlled Rectifier, |
文件: | 总13页 (文件大小:969K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
Date: 27.01.2005
IXYS
Data Sheet Issue: 2
Thyristor/Diode Modules M## 700
Absolute Maximum Ratings
VRRM
VDRM
[V]
MCC
MCD
MDC
MCA
MCK
MCDA
MDCA
1200
1400
1600
1800
700-12io1W
700-14io1W
700-16io1W
700-18io1W
700-12io1W
700-14io1W
700-16io1W
700-18io1W
700-12io1W
700-14io1W
700-16io1W
700-18io1W
700-12io1W
700-14io1W
700-16io1W
700-18io1W
700-12io1W
700-14io1W
700-16io1W
700-18io1W
700-12io1W
700-14io1W
700-16io1W
700-18io1W
700-12io1W
700-14io1W
700-16io1W
700-18io1W
MAXIMUM
LIMITS
VOLTAGE RATINGS
UNITS
VDRM
Repetitive peak off-state voltage 1)
Non-repetitive peak off-state voltage 1)
Repetitive peak reverse voltage 1)
Non-repetitive peak reverse voltage 1)
1200-1800
1200-1800
1200-1800
1300-1900
V
V
V
V
VDSM
VRRM
VRSM
MAXIMUM
LIMITS
OTHER RATINGS
UNITS
IT(AV)M
IT(AV)M
IT(AV)M
Maximum average on-state current, Twater = 17°C, 4l/min 2)
Maximum average on-state current. Twater = 42°C, 4l/min 2)
Maximum average on-state current. Twater = 85°C, 4l/min 2)
847
700
A
A
398
A
IT(RMS)M Nominal RMS on-state current, Twater = 17°C, 4l/min 2)
1331
1057
16.5
A
IT(d.c.)
ITSM
ITSM2
I2t
D.C. on-state current, Twater = 17°C, 4l/min
A
3)
Peak non-repetitive surge tp = 10 ms, VRM = 60%VRRM
Peak non-repetitive surge tp = 10 ms, VRM £ 10V 3)
kA
kA
A2s
A2s
A/µs
A/µs
V
18.2
I2t capacity for fusing tp = 10 ms, VRM = 60%VRRM
1.36×106
1.66×106
150
3)
I2t
I2t capacity for fusing tp = 10 ms, VRM £ 10 V 3)
Critical rate of rise of on-state current (repetitive) 4)
(di/dt)cr
Critical rate of rise of on-state current (non-repetitive) 4)
300
VRGM
PG(AV)
PGM
Peak reverse gate voltage
5
Mean forward gate power
4
W
Peak forward gate power
30
W
VISOL
Tvj op
Tstg
Isolation Voltage 5)
3500
-40 to +125
-40 to +150
V
Operating temperature range
Storage temperature range
°C
°C
Notes:
1) De-rating factor of 0.13% per °C is applicable for Tvj below 25°C.
2) Single phase; 50 Hz, 180° half-sinewave.
3) Half-sinewave, 125°C Tvj initial.
4) VD = 67% VDRM, IFG = 2 A, tr £ 0.5µs, Tvj = 125°C.
5) AC RMS voltage, 50 Hz, 1min test
Data Sheet. Types M##700-12io1W and M##700-18io1W Issue 1
Page 1 of 12
June, 2019
IXYS
Thyristor/Diode Module Types M##700-12io1 and M##700-18io1
Thyristor Characteristics
PARAMETER
MIN. TYP. MAX. TEST CONDITIONS 1)
UNITS
VTM
Maximum peak on-state voltage
Maximum peak on-state voltage
Threshold voltage
-
-
-
-
-
-
-
-
1.5 ITM = 1700 A
1.17 ITM = 700 A
0.85
V
V
VTM
VT0
rT
V
Slope resistance
0.27
mW
(dv/dt)c
Critical rate of rise of off-state voltage 1000
-
-
VD = 80% VDRM, linear ramp, Gate o/c
V/µs
r
IDRM
Peak off-state current
Peak reverse current
-
-
-
-
-
-
-
-
-
-
-
-
70 Rated VDRM
70 Rated VRRM
3.0
mA
mA
V
IRRM
VGT
IGT
IH
-
-
Gate trigger voltage
Tvj = 25°C, VD = 10 V, IT = 3 A
Gate trigger current
-
300
mA
mA
Holding current
-
1000 Tvj = 25°C
1.5
tgd
Gate controlled turn-on delay time
Turn-on time
0.6
1.2
2200
IFG = 2 A, tr = 0.5 µs, VD = 67%VDRM
,
µs
ITM = 2000 A, di/dt = 10 A/µs, Tvj = 25°C
tgt
2.5
-
Qrr
Qra
Irm
trr
Recovered Charge
µC
µC
A
Recovered Charge, 50% chord
Reverse recovery current
Reverse recovery time, 50% chord
1600 1900
ITM = 1000 A, tp = 1 ms, di/dt = 10A/µs,
VR = 50 V
120
25
-
-
µs
ITM = 1000 A, tp = 1 ms, di/dt = 10 A/µs,
VR = 50 V, VDR = 80%VDRM, dvDR/dt = 20
V/µs
ITM = 1000 A, tp = 1 ms, di/dt = 10 A/µs,
VR = 50 V, VDR = 80%VDRM, dvDR/dt = 200 V/µs
-
-
200
300
-
-
tq
Turn-off time
µs
RthJW
F1
Thermal resistance, junction to water
Mounting force (to heatsink)
Mounting force (to terminals)
Weight
-
-
-
0.09 Single Thyristor
5.75
K/W
Nm
Nm
kg
4.25
10.2
-
2)
F2
-
13.8
Wt
1.5
-
Diode Characteristics
PARAMETER
MIN. TYP. MAX. TEST CONDITIONS 1)
UNITS
VFM
Maximum peak forward voltage
Threshold voltage
-
-
-
-
-
-
-
-
-
1.09 ITM = 1700 A
V
V
VT0
rT
-
0.72
Slope resistance
-
-
0.143
mW
mA
µC
µC
A
IRRM
Qrr
Qra
Irm
Peak reverse current
50 Rated VRRM
-
Recovered Charge
2200
Recovered Charge, 50% chord
Reverse recovery current
Reverse recovery time, 50% chord
1800 2250
ITM = 1000 A, tp = 1ms, di/dt = 10 A/µs,
VR = 50 V
145
25
-
-
trr
µs
Notes:
1) Unless otherwise indicated Tvj=125°C.
2) Screws must be lubricated
Data Sheet. Types M##700-12io1W and M##700-18io1W Issue 1
Page 2 of 12
June, 2019
IXYS
Thyristor/Diode Module Types M##700-12io1 and M##700-18io1
Notes on Ratings and Characteristics
1.0 Voltage Grade Table
VDRM VDSM VRRM
VRSM
V
1300
1500
1700
1900
VD VR
DC V
820
930
1040
1150
Voltage Grade
V
12
14
16
18
1200
1400
1600
1800
2.0 Extension of Voltage Grades
This report is applicable to other voltage grades when supply has been agreed by Sales/Production.
3.0 De-rating Factor
A blocking voltage de-rating factor of 0.13%/°C is applicable to this device for Tvj below 25°C.
4.0 Repetitive dv/dt
Standard dv/dt is 1000V/µs.
5.0 Snubber Components
When selecting snubber components, care must be taken not to use excessively large values of snubber
capacitor or excessively small values of snubber resistor. Such excessive component values may lead to
device damage due to the large resultant values of snubber discharge current. If required, please consult
the factory for assistance.
6.0 Rate of rise of on-state current
The maximum un-primed rate of rise of on-state current must not exceed 300A/µs at any time during
turn-on on a non-repetitive basis. For repetitive performance, the on-state rate of rise of current must not
exceed 150A/µs at any time during turn-on. Note that these values of rate of rise of current apply to the
total device current including that from any local snubber network.
7.0 Gate Drive
The nominal requirement for a typical gate drive is illustrated below. An open circuit voltage of at least
30V is assumed. This gate drive must be applied when using the full di/dt capability of the device.
IGM
4A/µs
IG
tp1
The magnitude of IGM should be between five and ten times IGT, which is shown on page 2. Its duration
(tp1) should be 20µs or sufficient to allow the anode current to reach ten times IL, whichever is greater.
Otherwise, an increase in pulse current could be needed to supply the necessary charge to trigger. The
‘back-porch’ current IG should remain flowing for the same duration as the anode current and have a
magnitude in the order of 1.5 times IGT.
Data Sheet. Types M##700-12io1W and M##700-18io1W Issue 1
Page 3 of 12
June, 2019
IXYS
Thyristor/Diode Module Types M##700-12io1 and M##700-18io1
8.0 Computer Modelling Parameters
8.1 Thyristor Dissipation Calculations
DT
2
-VT 0 + VT 0 + 4× ff 2 ×r ×WAV
WAV =
T
Rth
IAV =
and:
2× ff 2 ×r
T
DT = Tj max -TK
Where VT0 = 0.85 V, rT = 0.27 mW for the thyristor and VT0 = 0.72 V, rT = 0.143 mW for the diode.
Rth = Supplementary thermal impedance, see table below and
ff = Form factor, see table below.
Supplementary Thermal Impedance
Conduction Angle
Square wave
Sine wave
30°
60°
90°
120°
180°
270°
d.c.
0.0976
0.0950
0.0955
0.0933
0.0942
0.0924
0.0933
0.0917
0.0920
0.0902
0.0907
0.090
Form Factors
90°
Conduction Angle
Square wave
Sine wave
30°
3.464
3.98
60°
120°
1.732
1.879
180°
1.414
1.57
270°
d.c.
1
2.449
2.778
2
1.149
2.22
8.2 Calculating thyristor VT using ABCD Coefficients
The on-state characteristic IT vs. VT, on page 6 is represented in two ways;
(i) the well established VT0 and rT tangent used for rating purposes and
(ii) a set of constants A, B, C, D, forming the coefficients of the representative equation for VT in terms of
IT given below:
VT = A + B ×ln
(
IT + C × IT + D × IT
)
The constants, derived by curve fitting software, are given below for both hot and cold characteristics.
The resulting values for VT agree with the true device characteristic over a current range, which is
limited to that plotted.
25°C Coefficients
125°C Coefficients
A
B
C
D
0.7860338
9.929062×10-3
1.94704×10-4
7.409213×10-3
A
B
C
D
-0.099137717
0.1987038
4.23812×10-4
-0.01453705
Data Sheet. Types M##700-12io1W and M##700-18io1W Issue 1
Page 4 of 12
June, 2019
IXYS
Thyristor/Diode Module Types M##700-12io1 and M##700-18io1
8.3 D.C. Thermal Impedance Calculation
-t
p=n
æ
ö
÷
t p
ç
p
r = r × 1- e
å
t
ç
÷
p=1
è
ø
Where p = 1 to n
n =
number of terms in the series and
t
rt
rp
tp
= Duration of heating pulse in seconds.
= Thermal resistance at time t.
= Amplitude of pth term.
= Time Constant of rth term).
The coefficients for this device are shown in the tables below:
D.C.
Term
rp
1
2
3
4
5
0.07972
4.46119
3.64310×10-3
4.87795×10-3
1.91134×10-3
5.07740×10-3
2.16406×10-3
6.07258×10-3
0.71394
0.06312
tp
9.0 Reverse recovery ratings
(i) Qra is based on 50% IRM chord as shown in Fig. 1
Fig. 1
(ii) Qrr is based on a 150 µs integration time i.e.
150µs
Qrr = irr .dt
ò
0
(iii)
t1
K Factor =
t2
Data Sheet. Types M##700-12io1W and M##700-18io1W Issue 1
Page 5 of 12
June, 2019
IXYS
Thyristor/Diode Module Types M##700-12io1 and M##700-18io1
Thyristor Curves
Figure 1 – On-state characteristics of Limit device
Figure 2 – Transient thermal impedance
0.1
10000
M##700-12io1W-18io1W
Issue 1
Single Thyristor
M##700-12io1W-18io1W
Issue 1
Tj = 25°C
Tj = 125°C
0.01
1000
0.001
0.0001
100
0.00001
0.00001 0.0001 0.001
0.5
1
1.5
2
2.5
3
3.5
0.01
0.1
1
10
100
Instantaneous On-state voltage - VTM (V)
Time (s)
Figure 3 – Gate characteristics – Trigger limits
Figure 4 – Gate characteristics – Power curves
35
8
M##700-12io1W-18io1W
M##700-12io1W-18io1W
Issue 1
Issue 1
Tj=25°C
Tj=25°C
7
30
6
Max VG dc
Max VG dc
25
5
20
15
4
3
2
IGT, VGT
PG Max 30W dc
10
PG 4W dc
5
1
Min VG dc
IGD, VGD
Min VG dc
0
0
0
2
4
6
8
10
0
0.2
0.4
0.6
0.8
1
Gate Trigger Current - IGT (A)
Gate Trigger Current - IGT (A)
Data Sheet. Types M##700-12io1W and M##700-18io1W Issue 1
Page 6 of 12
June, 2019
IXYS
Thyristor/Diode Module Types M##700-12io1 and M##700-18io1
Figure 5 – Total recovered charge, Qrr
Figure 6 – Recovered charge, Qra (50% chord)
10000
10000
M##700-12io1W-18io1W
Issue 1
M##700-12io1W-18io1W
Issue 1
Tj=125°C
Tj=125°C
2000A
1500A
1000A
500A
2000A
1500A
1000A
500A
1000
1000
1
10
100
1000
1
10
100
1000
di/dt (A/µs)
di/dt (A/µs)
Figure 7 – Peak reverse recovery current, Irm
Figure 8 – Maximum recovery time, trr (50% chord)
100
1000.00
M##700-12io1W-18io1W
2000A
M##700-12io1W-18io1W
Issue 1
Issue 1
1500A
1000A
500A
Tj=125°C
Tj=125°C
10
2000A
1500A
1000A
500A
1
100.00
1
10
100
1000
1
10
100
1000
di/dt (A/µs)
di/dt (A/µs)
Data Sheet. Types M##700-12io1W and M##700-18io1W Issue 1
Page 7 of 12
June, 2019
IXYS
Thyristor/Diode Module Types M##700-12io1 and M##700-18io1
Figure 9 – On-state current vs. Power
dissipation – Sine wave
Figure 10 – On-state current vs. Heatsink
temperature – Sine wave
1200
140
M##700-12io1W-18io1W
M##700-12io1W-18io1W
Issue 1
Issue 1
180°
120°
90°
60°
30°
120
1000
800
600
400
200
0
100
80
60
40
90°
120° 180°
30°
60°
20
0
0
200
400
600
800
1000
0
200
400
600
800
1000
Mean forward current (A) (Whole cycle averaged)
Mean forward current (A) (Whole cycle averaged)
Figure 11 – On-state current vs. Power
dissipation – Square wave
Figure 12 – On-state current vs. Heatsink
temperature – Square wave
1200
140
M##700-12io1W-18io1W
M##700-12io1W-18io1W
Issue 1
Issue 1
120
100
80
60
40
20
0
1000
800
d.c.
270°
180°
120°
90°
60°
30°
600
400
200
0
30°
60° 90°120° 180° 270° d.c.
0
200
400
600
800
1000
0
200
400
600
800
1000
Mean Forward Current (Amps) (Whole Cycle Averaged)
Mean Forward Current (Amps) (Whole Cycle Averaged)
Data Sheet. Types M##700-12io1W and M##700-18io1W Issue 1
Page 8 of 12
June, 2019
IXYS
Thyristor/Diode Module Types M##700-12io1 and M##700-18io1
Figure 13 – Maximum surge and I2t Ratings
Gate may temporarily lose control of conduction angle
100000
10000
1000
1.00E+07
I2t: VRRM £10V
I2t: 60% VRRM
1.00E+06
ITSM: VRRM £10V
ITSM: 60% VRRM
Tj (initial) = 125°C
M##700-12io1W-18io1W
Issue 1
1.00E+05
1
3
5
10
1
5
10
50 100
Duration of surge (ms)
Duration of surge (cycles @ 50Hz)
Figure 14 – Average on-state current and Power loss Vs. Inlet water temperature
1000
10000
Average Current
1000
Power Loss
M##700-12io1W-18io1W
Issue 1
100
100
90
0
10
20
30
40
50
60
70
80
Inlet water temperature, Twater (°C)
Data Sheet. Types M##700-12io1W and M##700-18io1W Issue 1
Page 9 of 12
June, 2019
IXYS
Thyristor/Diode Module Types M##700-12io1 and M##700-18io1
Diode Curves
Figure 15 – Total recovered charge, Qrr
Figure 16 – Recovered charge, Qra (50% chord)
10000
10000
M##700-12io1W-18io1W
M##700-12io1W-18io1W
Issue 1
Issue 1
Tj=125°C
Tj=125°C
2000A
1500A
1000A
500A
2000A
1500A
1000A
500A
1000
1000
1
10
100
1000
1
10
100
1000
di/dt (A/µs)
di/dt (A/µs)
Figure 17 – Peak reverse recovery current, Irm
Figure 18 – Maximum recovery time, trr (50% chord)
100
10000
M##700-12io1W-18io1W
M##700-12io1W-18io1W
Issue 1
Issue 1
Tj=125°C
Tj=125°C
2000A
1500A
1000A
500A
10
1000
2000A
1500A
1000A
500A
1
100
1
10
100
1000
1
10
100
1000
di/dt (A/µs)
di/dt (A/µs)
Data Sheet. Types M##700-12io1W and M##700-18io1W Issue 1
Page 10 of 12
June, 2019
IXYS
Thyristor/Diode Module Types M##700-12io1 and M##700-18io1
Figure 19 – Instantaneous forward voltage VF
10000
M##700-12io1W-18io1W
Issue 1
125°C
125°C
1000
100
0
0.5
1
1.5
2
2.5
Maximum instantaneous forward voltage - VFM (V)
Data Sheet. Types M##700-12io1W and M##700-18io1W Issue 1
Page 11 of 12
June, 2019
IXYS
Thyristor/Diode Module Types M##700-12io1 and M##700-18io1
Outline Drawing & Ordering Information
3
6 7
1
1
1
1
5 4 2
5 4 2
2
MCC
MCD
MDC
3
3
6 7
3 7 6
5 4 2
MCA
MCK
3
6 7 1 4 5
2
5 4 2
2
3
1
1
MCDA
MDCA
150A113
3 7 6
ORDERING INFORMATION
(Please quote 11 digit code as below)
tt
M
## / ###
700
io
1
W
Configuration code
CC, CD, DC, CA,
CK, CDA, DCA
Voltage code
VDRM/100
12-18
Fixed
Version
Code
Fixed
Type Code
Average
Current Rating
i = Critical dv/dt 1000 V/µs
o = Typical turn-off time
Water
cooled base
Order code: MCD700-14io1W– MCD configuration, 1400V VDRM, VRRM, water cooled base
IXYS Semiconductor GmbH
Edisonstraße 15
D-68623 Lampertheim
Tel: +49 6206 503-0
Fax: +49 6206 503-627
E-mail: marcom@ixys.de
Westcode Semiconductors Ltd
Langley Park Way, Langley Park,
Chippenham, Wiltshire, SN15 1GE.
Tel: +44 (0)1249 444524
Fax: +44 (0)1249 659448
E-mail: WSL.sales@westcode,com
www.ixys.com
IXYS Corporation
3540 Bassett Street
Westcode Semiconductors Inc
3270 Cherry Avenue
Santa Clara CA 95054 USA
Tel: +1 (408) 982 0700
Fax: +1 (408) 496 0670
Long Beach CA 90807 USA
Tel: +1 (562) 595 6971
Fax: +1 (562) 595 8182
E-mail: sales@ixys.net
E-mail: WSI.sales@westcode.com
An IXYS Company
www.westcode.com
The information contained herein is confidential and is protected by Copyright. The information may not be used or disclosed
except with the written permission of and in the manner permitted by the proprietors IXYS Semiconductors GmbH.
© IXYS Semiconductor GmbH.
In the interest of product improvement, IXYS reserves the right to change specifications at any time without prior notice.
Devices with a suffix code (2-letter, 3-letter or letter/digit/letter combination) added to their generic code are not necessarily
subject to the conditions and limits contained in this report.
Data Sheet. Types M##700-12io1W and M##700-18io1W Issue 1
Page 12 of 12
June, 2019
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