MDD95-22N1 [LITTELFUSE]

Rectifier Diode, 120A, 2200V V(RRM),;
MDD95-22N1
型号: MDD95-22N1
厂家: LITTELFUSE    LITTELFUSE
描述:

Rectifier Diode, 120A, 2200V V(RRM),

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MDD 95  
IFRMS = 2x 180 A  
Diode Modules  
IFAVM = 2x 120 A  
VRRM = 800-2200 V  
VRSM  
V
VRRM  
V
Type  
3
1
2
3
TO-240 AA  
900  
1300  
1500  
1700  
1900  
2100  
2300  
800  
1200  
1400  
1600  
1800  
2000  
2200  
MDD 95-08N1 B  
MDD 95-12N1 B  
MDD 95-14N1 B  
MDD 95-16N1 B  
MDD 95-18N1 B  
MDD 95-20N1 B  
MDD 95-22N1 B  
2
Features  
Symbol  
Test Conditions  
Maximum Ratings  
International standard package  
JEDEC TO-240 AA  
Direct copper bonded Al2O3 -ceramic  
base plate  
Planar passivated chips  
Isolation voltage 3600 V~  
UL registered, E 72873  
IFRMS  
IFAVM  
TVJ = TVJM  
TC = 105°C; 180° sine  
180  
120  
A
A
IFSM  
TVJ = 45°C;  
VR = 0  
t = 10 ms (50 Hz), sine  
t = 8.3 ms (60 Hz), sine  
2800  
3300  
A
A
TVJ = TVJM  
VR = 0  
t = 10 ms (50 Hz), sine  
t = 8.3 ms (60 Hz), sine  
2500  
2750  
A
A
òi2dt  
TVJ = 45°C  
VR = 0  
t = 10 ms (50 Hz), sine  
t = 8.3 ms (60 Hz), sine  
39 200  
45 000  
A2s  
A2s  
Applications  
Supplies for DC power equipment  
DC supply for PWM inverter  
Field supply for DC motors  
TVJ = TVJM  
VR = 0  
t = 10 ms (50 Hz), sine  
t = 8.3 ms (60 Hz), sine  
31 200  
31 300  
A2s  
A2s  
TVJ  
TVJM  
Tstg  
-40...+150  
150  
-40...+125  
°C  
°C  
°C  
Battery DC power supplies  
VISOL  
50/60 Hz, RMS  
t = 1 min  
t = 1 s  
3000  
3600  
V~  
V~  
Advantages  
IISOL 1 mA  
Space and weight savings  
Simple mounting  
Improved temperature and power  
Md  
Mounting torque (M5)  
Terminal connection torque (M5)  
2.5-4/22-35 Nm/lb.in.  
2.5-4/22-35 Nm/lb.in.  
cycling  
Reduced protection circuits  
Weight  
Typical including screws  
90  
g
Symbol  
IR  
Test Conditions  
Characteristic Values  
Dimensions in mm (1 mm = 0.0394")  
TVJ = TVJM; VR = VRRM  
15 mA  
VF  
IF = 300 A; TVJ = 25°C  
1.43  
0.75  
1.95 mΩ  
V
V
VT0  
rT  
For power-loss calculations only  
TVJ = TVJM  
QS  
IRM  
TVJ = 125°C; IF = 50 A, -di/dt = 6 A/µs  
170  
45  
µC  
A
RthJC  
per diode; DC current  
per module  
per diode; DC current  
per module  
0.26 K/W  
0.13 K/W  
0.46 K/W  
0.23 K/W  
other values  
see Fig. 6/7  
RthJK  
dS  
dA  
a
Creepage distance on surface  
Strike distance through air  
Maximum allowable acceleration  
12.7 mm  
9.6 mm  
50 m/s2  
Data according to IEC 60747 and refer to a single diode unless otherwise stated.  
IXYS reserves the right to change limits, test conditions and dimensions  
© 1999 IXYS All rights reserved  
1 - 3  
MDD 95  
© 1999 IXYS All rights reserved  
2 - 3  
MDD 95  
Fig. 5 Three phase rectifier bridge:  
Power dissipation versus direct  
output current and ambient  
temperature  
Fig. 6 Transient thermal impedance  
junction to case (per diode)  
RthJC for various conduction angles d:  
d
RthJC (K/W)  
DC  
180°  
120°  
60°  
0.26  
0.28  
0.30  
0.34  
0.38  
30°  
Constants for ZthJC calculation:  
i
Rthi (K/W)  
ti (s)  
1
2
3
0.013  
0.072  
0.175  
0.0012  
0.047  
0.394  
Fig. 7 Transient thermal impedance  
junction toheatsink(per diode)  
RthJK for various conduction angles d:  
d
RthJK (K/W)  
DC  
180°  
120°  
60°  
0.46  
0.48  
0.50  
0.54  
0.58  
30°  
Constants for ZthJK calculation:  
i
Rthi (K/W)  
ti (s)  
1
2
3
4
0.013  
0.072  
0.175  
0.2  
0.0012  
0.047  
0.394  
1.32  
© 1999 IXYS All rights reserved  
3 - 3  

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