NGB8202ANT4G [LITTELFUSE]
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| 型号： | NGB8202ANT4G |
| 厂家： | 
LITTELFUSE |
| 描述： | 暂无描述 栅 功率控制 晶体管 |
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NGB8202AN
Ignition IGBT
20 A, 400 V, N−Channel D2PAK
This Logic Level Insulated Gate Bipolar Transistor (IGBT) features
monolithic circuitry integrating ESD and Overvoltage clamped
protection for use in inductive coil drivers applications. Primary uses
include Ignition, Direct Fuel Injection, or wherever high voltage and
high current switching is required.
Littelfuse.com
20 AMPS, 400 VOLTS
Features
V
CE(on) = 1.3 V @
• Ideal for Coil−on−Plug and Driver−on−Coil Applications
• Gate−Emitter ESD Protection
IC = 10 A, VGE . 4.5 V
C
• Temperature Compensated Gate−Collector Voltage Clamp Limits
Stress Applied to Load
• Integrated ESD Diode Protection
R
G
G
• Low Threshold Voltage for Interfacing Power Loads to Logic or
Microprocessor Devices
R
GE
• Low Saturation Voltage
• High Pulsed Current Capability
E
• These are Pb−Free Devices
Applications
2
D PAK
CASE 418B
STYLE 4
• Ignition Systems
1
MAXIMUM RATINGS (T = 25°C unless otherwise noted)
J
MARKING DIAGRAM
Rating
Collector−Emitter Voltage
Collector−Gate Voltage
Gate−Emitter Voltage
Symbol
Value
440
Unit
V
4
V
CES
Collector
V
CER
440
V
GB
V
GE
"15
V
8202xxG
AYWW
Collector Current−Continuous
I
C
20
50
A
DC
A
AC
@ T = 25°C − Pulsed
C
Continuous Gate Current
I
I
1.0
20
mA
mA
kV
1
Gate
3
G
Emitter
2
Transient Gate Current (t≤2 ms, f≤100 Hz)
ESD (Charged−Device Model)
G
Collector
ESD
ESD
2.0
GB8202xx = Device Code
xx = AN
ESD (Human Body Model)
kV
R = 1500 W, C = 100 pF
8.0
A
= Assembly Location
Y
WW
G
= Year
= Work Week
= Pb−Free Package
ESD (Machine Model) R = 0 W, C = 200 pF
ESD
500
V
Total Power Dissipation @ T = 25°C
P
D
150
1.0
W
W/°C
C
Derate above 25°C
ORDERING INFORMATION
Operating & Storage Temperature Range
T , T
−55 to +175
°C
J
stg
†
Device
Package
Shipping
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
NGB8202ANT4G
NGB8202ANTF4G
800/Tape & Reel
700/Tape & Reel
2
D PAK
(Pb−Free)
Specifications subject to change without notice. © 2016 Littelfuse, Inc.
1
Publication Order Number:
December, 2016 − Rev. 10
NGB8202AN/D
NGB8202AN
UNCLAMPED COLLECTOR−TO−EMITTER AVALANCHE CHARACTERISTICS (−55° ≤ T ≤ 175°C)
J
Characteristic
Symbol
Value
Unit
Single Pulse Collector−to−Emitter Avalanche Energy
E
AS
mJ
V
CC
V
CC
V
CC
= 50 V, V = 5.0 V, Pk I = 16.7 A, R = 1000 W, L = 1.8 mH, Starting T = 25°C
250
200
180
GE
L
G
J
= 50 V, V = 5.0 V, Pk I = 14.9 A, R = 1000 W, L = 1.8 mH, Starting T = 150°C
GE
L
G
J
= 50 V, V = 5.0 V, Pk I = 14.1 A, R = 1000 W, L = 1.8 mH, Starting T = 175°C
GE
L
G
J
Reverse Avalanche Energy
= 100 V, V = 20 V, Pk I = 25.8 A, L = 6.0 mH, Starting T = 25°C
E
AS(R)
mJ
V
CC
2000
GE
L
J
THERMAL CHARACTERISTICS
Thermal Resistance, Junction−to−Case
R
1.0
62.5
275
°C/W
°C/W
°C
q
q
JC
JA
L
Thermal Resistance, Junction−to−Ambient (Note 1)
R
Maximum Temperature for Soldering Purposes, 1/8″ from case for 5 seconds (Note 2)
T
1. When surface mounted to an FR4 board using the minimum recommended pad size.
ELECTRICAL CHARACTERISTICS
Characteristic
OFF CHARACTERISTICS
Collector−Emitter Clamp Voltage
Symbol
Test Conditions
Temperature
Min
Typ
Max
Unit
BV
I
= 2.0 mA
= 10 mA
= 0 V,
T = −40°C to 175°C
370
390
395
415
0.1
420
440
1.0
V
CES
C
J
I
T = −40°C to 175°C
C
J
Zero Gate Voltage Collector Current
I
V
T = 25°C
J
mA
mA
CES
GE
V
CE
= 15 V
T = 25°C
J
0.5
1.0
0.4
30
1.5
25
0.8
35
39
33
10
100*
5.0
39
V
V
= 200 V,
CE
T = 175°C
J
= 0 V
GE
T = −40°C
J
Reverse Collector−Emitter Clamp
Voltage
B
T = 25°C
J
V
VCES(R)
T = 175°C
J
35
45*
37
I
C
= −75 mA
T = −40°C
J
30
Reverse Collector−Emitter Leakage
Current
I
T = 25°C
mA
CES(R)
J
0.05
1.0
0.2
8.5
1.0
25
V
CE
= −24 V
T = 175°C
J
T = −40°C
J
0.005 0.025
0.2
Gate−Emitter Clamp Voltage
Gate−Emitter Leakage Current
Gate Resistor
BV
I
= "5.0 mA
= "5.0 V
T = −40°C to 175°C
12
12.5
300
70
14
V
mA
W
GES
G
J
I
V
T = −40°C to 175°C
J
200
350*
GES
GE
R
T = −40°C to 175°C
J
G
Gate−Emitter Resistor
R
T = −40°C to 175°C 14.25
J
16
25
kW
GE
ON CHARACTERISTICS (Note 3)
Gate Threshold Voltage
V
GE(th)
T = 25°C
1.5
0.7
1.7
4.0
1.8
1.0
2.0
4.6
2.1
1.3
V
J
I
= 1.0 mA,
C
V
T = 175°C
J
= V
GE
CE
T = −40°C
J
2.3*
5.2
Threshold Temperature Coefficient
(Negative)
mV/°C
*Maximum Value of Characteristic across Temperature Range.
3. Pulse Test: Pulse Width v 300 mS, Duty Cycle v 2%.
Specifications subject to change without notice. © 2016 Littelfuse, Inc.
2
Publication Order Number:
December, 2016 − Rev. 10
NGB8202AN/D
NGB8202AN
ELECTRICAL CHARACTERISTICS
Characteristic
Symbol
Test Conditions
Temperature
Min
Typ
Max
Unit
ON CHARACTERISTICS (Note 4)
Collector−to−Emitter On−Voltage
V
CE(on)
T = 25°C
V
J
0.85
0.7
1.03
0.9
1.35
1.15
1.4
I
C
= 6.5 A, V = 3.7 V
GE
T = 175°C
J
T = −40°C
J
0.0
1.11
T = 25°C
0.9
0.8
1.0
1.11
1.01
1.18
1.45
1.25
1.5
J
I
C
= 9.0 A, V = 3.9 V
GE
T = 175°C
J
T = −40°C
J
T = 25°C
0.85
0.7
1.0
1.0
0.8
1.1
1.15
1.0
1.25
1.1
1.2
1.3
1.15
0.95
1.3
1.4
1.2
J
I
V
= 7.5 A,
C
T = 175°C
J
= 4.5 V
GE
T = −40°C
J
1.6*
1.6
T = 25°C
J
1.3
I
= 10 A,
= 4.5 V
C
T = 175°C
J
1.05
1.4
1.4
V
GE
T = −40°C
J
1.7*
1.7
T = 25°C
J
1.45
1.3
I
= 15 A,
= 4.5 V
C
T = 175°C
J
1.55
1.8*
1.9
V
GE
T = −40°C
J
1.55
1.4
T = 25°C
J
I
C
= 20 A, V = 4.5 V −
GE
T = 175°C
J
1.5
1.8
T = −40°C
J
1.42
2.0
Forward Transconductance
gfs
I
V
= 6.0 A,
T = 25°C
10
18
25
Mhos
pF
C
J
= 5.0 V
CE
DYNAMIC CHARACTERISTICS
Input Capacitance
C
1100
70
1300
80
1500
90
ISS
Output Capacitance
C
OSS
C
RSS
f = 10 kHz, V = 25 V
T = 25°C
J
CE
Transfer Capacitance
18
20
22
Specifications subject to change without notice. © 2016 Littelfuse, Inc.
3
Publication Order Number:
December, 2016 − Rev. 10
NGB8202AN/D
NGB8202AN
Test Conditions
ELECTRICAL CHARACTERISTICS
Characteristic
Symbol
Temperature
Min
Typ
Max
Unit
SWITCHING CHARACTERISTICS
Turn−Off Delay Time (Resistive)
t
T = 25°C
6.0
6.0
4.0
8.0
3.0
5.0
1.5
5.0
1.0
1.0
4.0
3.0
8.0
8.0
6.0
10.5
5.0
7.0
3.0
7.0
1.5
1.5
6.0
5.0
10
10
mSec
d(off)
J
V
= 300 V, I = 9.0 A
T = 175°C
J
CC
C
R
= 1.0 kW, R = 33 W,
G
L
Fall Time (Resistive)
Turn−Off Delay Time (Inductive)
Fall Time (Inductive)
Turn−On Delay Time
Rise Time
t
f
T = 25°C
J
8.0
14
V
GE
= 5.0 V
T = 175°C
J
t
T = 25°C
J
7.0
9.0
4.5
10
d(off)
V
CC
= 300 V, I = 9.0 A
C
T = 175°C
J
R
= 1.0 kW,
G
t
f
T = 25°C
J
L = 300 mH, V = 5.0 V
GE
T = 175°C
J
t
T = 25°C
J
2.0
2.0
8.0
7.0
d(on)
V
= 14 V, I = 9.0 A
C
T = 175°C
J
CC
R
= 1.0 kW, R = 1.5 W,
G
L
t
r
T = 25°C
J
V
GE
= 5.0 V
T = 175°C
J
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
*Maximum Value of Characteristic across Temperature Range.
4. Pulse Test: Pulse Width v 300 mS, Duty Cycle v 2%.
Specifications subject to change without notice. © 2016 Littelfuse, Inc.
4
Publication Order Number:
December, 2016 − Rev. 10
NGB8202AN/D
NGB8202AN
TYPICAL ELECTRICAL CHARACTERISTICS
400
350
300
250
200
150
100
50
30
25
V
V
R
= 14 V
= 5.0 V
= 1000 W
CC
T = 25°C
J
GE
G
L = 1.8 mH
20
15
10
5
T = 175°C
J
L = 3.0 mH
L = 10 mH
V
V
R
= 14 V
= 5.0 V
= 1000 W
CC
GE
G
0
0
0
2
6
8
10
−50 −25
0
25
50
75 100
150 175
125
4
INDUCTOR (mH)
T , JUNCTION TEMPERATURE (°C)
J
Figure 1. Self Clamped Inductive Switching
Figure 2. Open Secondary Avalanche Current
vs. Temperature
60
50
40
30
20
10
0
2.0
V
= 10 V
4.5 V
4 V
GE
I
= 25 A
C
1.75
5 V
I
C
I
C
I
C
= 20 A
= 15 A
= 10 A
1.5
1.25
1.0
T = 175°C
J
3.5 V
I
= 7.5 A
C
3 V
0.75
0.5
2.5 V
0.25
V
GE
= 4.5 V
0.0
−50 −25
0
1
2
3
4
5
6
7
8
0
25
50
75 100 125 150 175
T , JUNCTION TEMPERATURE (°C)
J
V
CE
, COLLECTOR TO EMITTER VOLTAGE (V)
Figure 3. Collector−to−Emitter Voltage vs.
Junction Temperature
Figure 4. Collector Current vs.
Collector−to−Emitter Voltage
60
50
40
30
20
10
0
60
50
40
30
20
10
0
V
= 10 V
V
= 10 V
4.5 V
4.5 V
GE
GE
4 V
4 V
5 V
5 V
T = 25°C
3.5 V
3 V
T = −40°C
J
J
3.5 V
3 V
2.5 V
7
2.5 V
0
1
2
3
4
5
6
8
0
1
2
3
4
5
6
7
8
V
CE
, COLLECTOR TO EMITTER VOLTAGE (V)
V
CE
, COLLECTOR TO EMITTER VOLTAGE (V)
Figure 5. Collector Current vs.
Collector−to−Emitter Voltage
Figure 6. Collector Current vs.
Collector−to−Emitter Voltage
Specifications subject to change without notice. © 2016 Littelfuse, Inc.
5
Publication Order Number:
December, 2016 − Rev. 10
NGB8202AN/D
NGB8202AN
TYPICAL ELECTRICAL CHARACTERISTICS
10000
45
40
35
30
25
20
15
10
5
V
CE
= 5 V
1000
V
CE
= −24 V
100
10
T = 25°C
J
V
CE
= 200 V
1.0
0.1
T = 175°C
J
T = −40°C
J
0
−50 −25
0
25
50
75 100 125 150 175
0
0.5
1
1.5
2
2.5
3
3.5
4
V
GE
, GATE TO EMITTER VOLTAGE (V)
T , JUNCTION TEMPERATURE (°C)
J
Figure 7. Transfer Characteristics
Figure 8. Collector−to−Emitter Leakage
Current vs. Temperature
10000
1000
100
2.50
2.25
2.00
1.75
1.50
Mean
C
iss
Mean + 4 s
C
oss
C
rss
Mean − 4 s
1.25
1.00
0.75
0.50
10
1.0
0.1
0.25
0
−50 −25
0
25
50
75 100 125 150 175
0
5
10
15
20
25
T , JUNCTION TEMPERATURE (°C)
J
V
CE
, COLLECTOR TO EMITTER VOLTAGE (V)
Figure 9. Gate Threshold Voltage vs.
Temperature
Figure 10. Capacitance vs.
Collector−to−Emitter Voltage
12
10
8
12
10
8
V
V
R
= 300 V
= 5.0 V
= 1000 W
G
CC
GE
t
fall
I
C
= 9.0 A
L = 300 mH
t
delay
t
delay
6
4
2
0
6
4
2
0
t
V
V
R
= 300 V
= 5.0 V
= 1000 W
fall
CC
GE
G
I
C
= 9.0 A
R = 33 W
L
25
50
75
100
125
150
175
25
50
75
100
125
150
175
T , JUNCTION TEMPERATURE (°C)
J
T , JUNCTION TEMPERATURE (°C)
J
Figure 11. Resistive Switching Fall Time vs.
Temperature
Figure 12. Inductive Switching Fall Time vs.
Temperature
Specifications subject to change without notice. © 2016 Littelfuse, Inc.
6
Publication Order Number:
December, 2016 − Rev. 10
NGB8202AN/D
NGB8202AN
100
Duty Cycle = 0.5
0.2
0.1
10
1
0.05
0.02
0.01
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
P
(pk)
READ TIME AT t
1
t
1
0.1
0.01
t
2
Single Pulse
T
J(pk)
− T = P
R
q
(t)
JA
A
(pk)
For D=1: R
X R(t) for t ≤ 0.1 s
q
JC
DUTY CYCLE, D = t /t
1
2
0.000001
0.00001
0.0001
0.001
0.01
t,TIME (S)
0.1
1
10
100
1000
Figure 13. Minimum Pad Transient Thermal Resistance
(Non−normalized Junction−to−Ambient)
1
Duty Cycle = 0.5
0.2
0.1
0.1
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
P
(pk)
0.05
READ TIME AT t
1
t
1
0.02
0.01
t
2
T
J(pk)
− T = P
R
q
(t)
JC
A
(pk)
DUTY CYCLE, D = t /t
1
2
Single Pulse
0.00001
0.01
0.000001
0.0001
0.001
0.01
0.1
1
t,TIME (S)
Figure 14. Best Case Transient Thermal Resistance
(Non−normalized Junction−to−Case Mounted on Cold Plate)
Specifications subject to change without notice. © 2016 Littelfuse, Inc.
December, 2016 − Rev. 10
7
Publication Order Number:
NGB8202AN/D
NGB8202AN
PACKAGE DIMENSIONS
D2PAK 3
CASE 418B−04
ISSUE L
NOTES:
C
1. DIMENSIONING AND TOLERANCING
PER ANSI Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. 418B−01 THRU 418B−03 OBSOLETE,
NEW STANDARD 418B−04.
E
V
W
−B−
4
INCHES
DIM MIN MAX
MILLIMETERS
MIN
MAX
A
B
C
D
E
F
G
H
J
0.340 0.380
0.380 0.405
0.160 0.190
0.020 0.035
0.045 0.055
0.310 0.350
0.100 BSC
8.64
9.65 10.29
4.06
0.51
1.14
7.87
9.65
A
4.83
0.89
1.40
8.89
S
1
2
3
2.54 BSC
−T−
SEATING
PLANE
0.080
0.018 0.025
0.090 0.110
0.110
2.03
0.46
2.29
1.32
7.11
5.00 REF
2.00 REF
0.99 REF
2.79
0.64
2.79
1.83
8.13
K
W
J
K
L
G
0.052 0.072
0.280 0.320
0.197 REF
0.079 REF
0.039 REF
M
N
P
R
S
V
H
D 3 PL
M
M
T B
0.13 (0.005)
0.575 0.625 14.60 15.88
0.045 0.055 1.14 1.40
P
L
STYLE 4:
PIN 1. GATE
SOLDERING FOOTPRINT*
U
2. COLLECTOR
3. EMITTER
4. COLLECTOR
10.49
M
8.38
16.155
F
VIEW W−W
2X
3.504
2X
1.016
5.080
PITCH
DIMENSIONS: MILLIMETERS
Information furnished is believed to be accurate and reliable. However, users should independently evaluate the suitability of and test each product
selected for their own applications. Littelfuse products are not designed for, and shall not be used for, any purpose (including, without limitation,
military, aerospace, medical, life-saving, life-sustaining or nuclear facility applications, devices intended for surgical implant into the body, or any other
application in which the failure or lack of desired operation of the product may result in personal injury, death, or property damage) other than those
expressly set forth in applicable Littelfuse product documentation. Warranties granted by Littelfuse shall be deemed void for products used for any
purpose not expressly set forth in applicable Littelfuse documentation. Littelfuse shall not be liable for any claims or damages arising out of products
used in applications not expressly intended by Littelfuse as set forth in applicable Littelfuse documentation. The sale and use of Littelfuse products
is subject to Littelfuse Terms and Conditions of Sale, unless otherwise agreed by Littelfuse.
Littelfuse.com
Specifications subject to change without notice. © 2016 Littelfuse, Inc.
December, 2016 − Rev. 10
8
Publication Order Number:
NGB8202AN/D
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