P0248SC12D [LITTELFUSE]
Silicon Controlled Rectifier,;型号: | P0248SC12D |
厂家: | LITTELFUSE |
描述: | Silicon Controlled Rectifier, 栅 栅极 |
文件: | 总13页 (文件大小:1648K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
Date:- 09 Oct 2014
Data Sheet Issue:- 2
Fast Turn-off Thyristor
Type P0248SC12x
Absolute Maximum Ratings
MAXIMUM
LIMITS
1200
VOLTAGE RATINGS
UNITS
VDRM
VDSM
VRRM
VRSM
Repetitive peak off-state voltage, (note 1)
V
V
V
V
Non-repetitive peak off-state voltage, (note 1)
Repetitive peak reverse voltage, (note 1)
Non-repetitive peak reverse voltage, (note 1)
1200
1200
1300
MAXIMUM
LIMITS
248
OTHER RATINGS
UNITS
IT(AV)
IT(AV)
IT(RMS)
IT(d.c.)
ITSM
ITSM2
I2t
Mean on-state current, Tsink=55°C, (note 2)
Mean on-state current. Tsink=85°C, (note 2)
Nominal RMS on-state current, Tsink=25°C, (note 2)
D.C. on-state current, Tsink=25°C, (note 4)
Peak non-repetitive surge tp=10ms, VRM=0.6VRRM, (note 5)
Peak non-repetitive surge tp=10ms, VRM£10V, (note 5)
I2t capacity for fusing tp=10ms, VRM=0.6VRRM, (note 5)
I2t capacity for fusing tp=10ms, VRM£10V, (note 5)
Maximum rate of rise of on-state current (repetitive), (Note 6)
Maximum rate of rise of on-state current (non-repetitive), (Note 6)
Peak reverse gate voltage
A
A
160
507
A
399
A
2.7
kA
kA
A2s
A2s
A/µs
A/µs
V
2.97
36.5×103
44.1×103
500
I2t
(di/dt)cr
1000
VRGM
PG(AV)
PGM
VGD
5
Mean forward gate power
1.5
W
Peak forward gate power
60
W
Non-trigger gate voltage, (Note 7)
0.25
V
THS
Operating temperature range
-40 to +125
-40 to +150
°C
°C
Tstg
Storage temperature range
Notes:-
1) De-rating factor of 0.13% per °C is applicable for Tj below 25°C.
2) Double side cooled, single phase; 50Hz, 180° half-sinewave.
3) Single side cooled, single phase; 50Hz, 180° half-sinewave.
4) Double side cooled.
5) Half-sinewave, 125°C Tj initial.
6) VD=67% VDRM, IFG=2A, tr£0.5µs, Tcase=125°C.
7) Rated VDRM
.
Data Sheet. Type P0248SC12x Issue 2
Page 1 of 12
October 2014
Fast Turn-off Thyristor P0248SC12x
Characteristics
PARAMETER
MIN.
TYP. MAX. TEST CONDITIONS (Note 1)
UNITS
VTM
VT0
rT
Maximum peak on-state voltage
Threshold voltage
-
-
-
2.34 ITM=600A
V
V
-
1.60
1.23
Slope resistance
-
-
mW
V/µs
mA
mA
V
(dv/dt)cr Critical rate of rise of off-state voltage
200
-
-
VD=80% VDRM
IDRM
IRRM
VGT
IGT
Peak off-state current
Peak reverse current
Gate trigger voltage
Gate trigger current
Holding current
-
-
-
-
-
-
-
30
30
3.0
Rated VDRM
Rated VRRM
Tj=25°C
-
-
-
200 Tj=25°C
600 Tj=25°C
VD=10V, IT=3A
mA
mA
µC
IH
-
Qra
Recovered charge, 50% Chord
25
-
ITM=300A, tp=500µs, di/dt=20A/µs, Vr=50V
ITM=800A, tp=500µs, di/dt=50A/µs, Vr=50V,
Vdr=80%VDRM, dVdr/dt=20V/µs
-
-
-
20
tq
Turn-off time (note 2)
µs
ITM=800A, tp=500µs, di/dt=50A/µs, Vr=50V,
Vdr=80%VDRM, dVdr/dt=200V/µs
20
25
RthJC
Thermal resistance, junction to case
-
-
0.12 180°C Sine
K/W
F
Mounting force
Weight
3.3
-
-
5.5
-
kN
g
Wt
70
Notes:-
1) Unless otherwise indicated Tj=125°C.
2) The required tq (specified with dVdr/dt=200V/µs) is represented by an ‘x’ in the device part number. See ordering information for
details of tq codes.
Data Sheet. Type P0248SC12x Issue 2
Page 2 of 12
October 2014
Fast Turn-off Thyristor P0248SC12x
Notes on Ratings and Characteristics
1.0 Voltage Grade Table
VDRM VDSM VRRM
VRSM
V
1300
VD VR
DC V
810
Voltage Grade
12
V
1200
2.0 Extension of Voltage Grades
This report is applicable to other and higher voltage grades when supply has been agreed by
Sales/Production.
3.0 Extension of Turn-off Time
This Report is applicable to other tq/re-applied dv/dt combinations when supply has been agreed by
Sales/Production.
4.0 Repetitive dv/dt
Higher dv/dt selections are available up to 1000V/µs on request.
5.0 De-rating Factor
A blocking voltage de-rating factor of 0.13%/°C is applicable to this device for Tj below 25°C.
6.0 Rate of rise of on-state current
The maximum un-primed rate of rise of on-state current must not exceed 1500A/µs at any time during
turn-on on a non-repetitive basis. For repetitive performance, the on-state rate of rise of current must not
exceed 1000A/µs at any time during turn-on. Note that these values of rate of rise of current apply to the
total device current including that from any local snubber network.
7.0 Square wave ratings
These ratings are given for load component rate of rise of forward current of 100 and 500 A/µs.
8.0 Duty cycle lines
The 100% duty cycle is represented on all the ratings by a straight line. Other duties can be included as
parallel to the first.
9.0 Maximum Operating Frequency
The maximum operating frequency is set by the on-state duty, the time required for the thyristor to turn
off (tq) and for the off-state voltage to reach full value (tv), i.e.
1
f max =
tpulse+tq+tv
Data Sheet. Type P0248SC12x Issue 2
Page 3 of 12
October 2014
Fast Turn-off Thyristor P0248SC12x
10.0 On-State Energy per Pulse Characteristics
These curves enable rapid estimation of device dissipation to be obtained for conditions not covered by
the frequency ratings.
Let Ep be the Energy per pulse for a given current and pulse width, in joules
Let Rth(J-Hs) be the steady-state d.c. thermal resistance (junction to sink)
and TSINK be the heat sink temperature.
Then the average dissipation will be:
WAV = EP × f and TSINK (max.) =125 -
WAV × Rth
(
J -Hs
)
11.0 Reverse recovery ratings
(i) Qra is based on 50% Irm chord as shown in Fig. 1 below.
Fig. 1
(ii) Qrr is based on a 150µs integration time.
150µs
Qrr = irr .dt
i.e.
ò
0
t1
K Factor =
(iii)
t2
12.0 Reverse Recovery Loss
12.1 Determination by Measurement
From waveforms of recovery current obtained from a high frequency shunt (see Note 1, Page 5) and
reverse voltage present during recovery, an instantaneous reverse recovery loss waveform must be
constructed. Let the area under this waveform be E joules per pulse. A new heat sink temperature can
then be evaluated from:
TSINK (new) = TSINK (original) - E ×
k + f × Rth
(
J -Hs
)
where k = 0.227 (°C/W)/s
E = Area under reverse loss waveform per pulse in joules (W.s.)
f = rated frequency Hz at the original heat sink temperature.
Rth(J-Hs) = d.c. thermal resistance (°C/W).
Data Sheet. Type P0248SC12x Issue 2
Page 4 of 12
October 2014
Fast Turn-off Thyristor P0248SC12x
The total dissipation is now given by:
W =W(original) + E × f
(TOT)
12.2 Determination without Measurement
In circumstances where it is not possible to measure voltage and current conditions, or for design
purposes, the additional losses E in joules may be estimated as follows.
Let E be the value of energy per reverse cycle in joules (curves in Figure 9).
Let f be the operating frequency in Hz
TSINK
= TSINK
-
)
(
E × Rth × f
)
(
new
)
(
original
Where TSINK (new) is the required maximum heat sink temperature and
TSINK (original) is the heat sink temperature given with the frequency ratings.
A suitable R-C snubber network is connected across the thyristor to restrict the transient reverse voltage
to a peak value (Vrm) of 67% of the maximum grade. If a different grade is being used or Vrm is other than
67% of Grade, the reverse loss may be approximated by a pro rata adjustment of the maximum value
obtained from the curves.
12.3 Reverse Recovery Loss by Measurement
This thyristor has a low reverse recovered charge and peak reverse recovery current. When measuring
the charge care must be taken to ensure that:
(a) a.c. coupled devices such as current transformers are not affected by prior passage of high
amplitude forward current.
(b) A suitable, polarised, clipping circuit must be connected to the input of the measuring oscilloscope
to avoid overloading the internal amplifiers by the relatively high amplitude forward current signal
(c) Measurement of reverse recovery waveform should be carried out with an appropriate critically
damped snubber, connected across diode anode to cathode. The formula used for the calculation
of this snubber is shown below:
Vr
CS × di
R2 = 4×
dt
Where: Vr = Commutating source voltage
CS = Snubber capacitance
R
= Snubber resistance
13.0 Gate Drive
The recommended pulse gate drive is 30V, 15W with a short-circuit current rise time of not more than
0.5µs. This gate drive must be applied when using the full di/dt capability of the device.
The duration of pulse may need to be configured with respect to the application but should be no shorter
than 20µs, otherwise an increase in pulse current could be needed to supply the resulting increase in
charge to trigger.
Data Sheet. Type P0248SC12x Issue 2
Page 5 of 12
October 2014
Fast Turn-off Thyristor P0248SC12x
14.0 Computer Modelling Parameters
14.1 Calculating VT using ABCD Coefficients
The on-state characteristic IT vs VT, on page 7 is represented in two ways;
(i)
the well established VT0 and rT tangent used for rating purposes and
(ii)
a set of constants A, B, C, D, forming the coefficients of the representative equation for VT in
terms of IT given below:
VT = A+ B×ln
(
IT + C × IT + D× IT
)
The constants, derived by curve fitting software, are given in this report for hot and cold characteristics
where possible. The resulting values for VT agree with the true device characteristic over a current range,
which is limited to that plotted.
25°C Coefficients
125°C Coefficients
A
B
C
D
1.898471
A
B
C
D
1.402924
-0.06979098
0.7501852×10-3
0.03635077
0.6124406×10-3
1.174500×10-3
-0.1924742×10-3
Data Sheet. Type P0248SC12x Issue 2
Page 6 of 12
October 2014
Fast Turn-off Thyristor P0248SC12x
Curves
Figure 1 - On-state characteristics of Limit device
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Figure 2 - Gate characteristics - Trigger limits and Power curves
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Data Sheet. Type P0248SC12x Issue 2
Page 7 of 12
October 2014
Fast Turn-off Thyristor P0248SC12x
Figure 3 – Transient thermal impedance RthJK
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Issue 2
Figure 4 – Reverse recovery energy per pulse, Erm
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Data Sheet. Type P0248SC12x Issue 2
Page 8 of 12
October 2014
Fast Turn-off Thyristor P0248SC12x
Figure 5 – Typical recovered charge, Qra (50%
chord)
Figure 6 - Sine wave energy per pulse
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Figure 7 - Sine wave frequency ratings
Figure 8 - Sine wave frequency ratings
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Data Sheet. Type P0248SC12x Issue 2
Page 9 of 12
October 2014
Fast Turn-off Thyristor P0248SC12x
Figure 9 - Square wave frequency ratings
Figure 10 - Square wave frequency ratings
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Figure 11 - Square wave frequency ratings
Figure 12 - Square wave frequency ratings
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Data Sheet. Type P0248SC12x Issue 2
Page 10 of 12
October 2014
Fast Turn-off Thyristor P0248SC12x
Figure 13 - Square wave energy per pulse
Figure 14 - Square wave energy per pulse
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Figure 15 - Maximum surge and I2t Ratings
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Data Sheet. Type P0248SC12x Issue 2
Page 11 of 12
October 2014
Fast Turn-off Thyristor P0248SC12x
Outline Drawing & Ordering Information
101A212
ORDERING INFORMATION
(Please quote 10 digit code as below)
P0248
SC
¨ ¨
¨
Fixed
Fixed
Off-state Voltage Code
tq Code
Type Code
Outline Code
VDRM/100
12
D=20µs, E=25µs
Typical order code: P0248SC12D – 1.2kV VDRM, 20µs tq, ¾” stud mount.
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E-mail: sales@ixys.net
The information contained herein is confidential and is protected by Copyright. The information may not be used or
disclosed except with the written permission of and in the manner permitted by the proprietors IXYS UK Westcode Ltd.
© IXYS UK Westcode Ltd.
In the interest of product improvement, IXYS UK Westcode Ltd reserves the right to change specifications at any time
without prior notice.
Devices with a suffix code (2-letter or letter/digit/letter combination) added to their generic code are not necessarily subject
to the conditions and limits contained in this report.
Data Sheet. Type P0248SC12x Issue 2
Page 12 of 12
October 2014
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