P0602AAMC [LITTELFUSE]
Two-chip MicroCapacitance (MC) SIDACtor Device; 双芯片MicroCapacitance （ MC ）的SIDACtor设备
| 型号： | P0602AAMC |
| 厂家： | 
LITTELFUSE |
| 描述： | Two-chip MicroCapacitance (MC) SIDACtor Device |
| 文件： | 总2页 (文件大小：125K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Two-chip MicroCapacitance (MC) SIDACtor Device
Two-chip MicroCapacitance (MC)
SIDACtor Device
The two-chip modified TO-220 MC SIDACtor solid state device protects telecommunication
1
equipment in applications that reference Tip and Ring to earth ground but do not require
(T)
2
(G)
balanced protection.
3
(R)
SIDACtor devices are used to enable equipment to meet various regulatory requirements
including GR 1089, ITU K.20, K.21 and K.45, IEC 60950, UL 60950, and TIA-968-A
(formerly known as FCC Part 68).
Electrical Parameters: A-rated
V
V
V
V
S
DRM
S
DRM
Volts
Volts
Volts
Volts
Part
V
I
I
I
I
C
T
DRM
S
T
H
O
Number *
Pins 1-2, 3-2
6
25
Pins 1-3
Volts
µAmps
mAmps
800
Amps
2.2
mAmps
50
pF
45
25
P0302AA MC
P0602AA MC
25
40
12
50
50
80
4
4
5
5
800
2.2
50
Electrical Parameters: C-rated
V
V
V
V
S
DRM
S
DRM
Volts
Volts
Volts
Volts
Part
V
I
I
I
I
C
O
T
DRM
S
T
H
Number *
Pins 1-2, 3-2
25
58
65
90
120
140
170
190
220
275
Pins 1-3
Volts
µAmps
mAmps
800
Amps
2.2
2.2
2.2
2.2
2.2
2.2
2.2
2.2
2.2
2.2
mAmps
50
pF
60
60
60
50
50
50
40
40
40
40
P0602AC MC
P1402AC MC
P1602AC MC
P2202AC MC
P2702AC MC
P3002AC MC
P3602AC MC
P4202AC MC
P4802AC MC
P6002AC MC
40
77
95
130
160
180
220
250
300
350
50
80
4
4
4
4
4
4
4
4
4
4
5
5
5
5
5
5
5
5
5
5
116
130
180
240
280
340
380
440
550
154
190
260
320
360
440
500
600
700
800
800
800
800
800
800
800
800
150
150
150
150
150
150
150
150
150
800
* For surge ratings, see table below.
General Notes:
•
•
•
•
•
•
•
All measurements are made at an ambient temperature of 25 °C. I applies to -40 °C through +85 °C temperature range.
PP
PP
Listed SIDACtor devices are bi-directional. All electrical parameters and surge ratings apply to forward and reverse polarities.
I
is a repetitive surge rating and is guaranteed for the life of the product.
V
V
is measured at I
DRM.
DRM
is measured at 100 V/µs.
S
Special voltage (V and V
) and holding current (I ) requirements are available upon request.
H
S
DRM
Off-state capacitance (C ) is measured between Pins 1-2 and 3-2 at 1 MHz with a 2 V bias.
O
Surge Ratings
I
I
I
I
I
I
TSM
PP
PP
PP
PP
PP
2x10 µs
8x20 µs
10x160 µs
10x560 µs
10x1000 µs
60 Hz
Amps
di/dt
Series
Amps
Amps
Amps
Amps
Amps
Amps/µs
A
C
150
500
150
400
90
200
50
150
45
100
20
50
500
500
http://www.littelfuse.com
+1 972-580-7777
2 - 32
© 2004 Littelfuse, Inc.
SIDACtor® Data Book and Design Guide
Two-chip MicroCapacitance (MC) SIDACtor Device
Thermal Considerations
Package
Symbol
Parameter
Operating Junction Temperature Range
Storage Temperature Range
Value
-40 to +150
-65 to +150
50
Unit
°C
°C
T
J
Modified
TO-220
T
S
R
Thermal Resistance: Junction to Ambient
°C/W
θJA
PIN 1
PIN 3
PIN 2
+I
tr = rise time to peak value
td = decay time to half value
IT
Peak
Value
100
50
I
S
I
H
Waveform = tr x td
I
DRM
-V
+V
Half Value
VDRM
VT
VS
0
tr
td
0
t – Time (µs)
-I
V-I Characteristics
t x t Pulse Wave-form
r d
14
12
10
8
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
6
4
25 ˚C
25 ˚C
2
0
-4
-6
-8
-40 -20
0
20 40 60 80 100 120 140 160
Case Temperature (TC) – ˚C
-40 -20
0
20 40 60 80 100 120 140 160
Junction Temperature (TJ) – ˚C
Normalized V Change versus Junction Temperature
S
Normalized DC Holding Current versus Case Temperature
© 2004 Littelfuse, Inc.
2 - 33
http://www.littelfuse.com
+1 972-580-7777
SIDACtor® Data Book and Design Guide
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