P0640ECMC [LITTELFUSE]

MicroCapacitance (MC) SIDACtor Device; MicroCapacitance ( MC )的SIDACtor设备
P0640ECMC
型号: P0640ECMC
厂家: LITTELFUSE    LITTELFUSE
描述:

MicroCapacitance (MC) SIDACtor Device
MicroCapacitance ( MC )的SIDACtor设备

双向触发二极管
文件: 总2页 (文件大小:123K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
MicroCapacitance (MC) SIDACtor Device  
MicroCapacitance (MC) SIDACtor Device  
The TO-92 MC SIDACtor series is intended for applications sensitive to load values.  
Typically, high speed connections require a lower capacitance. CO values for MC devices  
are 40% lower than a standard EC part.  
This MC SIDACtor series is used to enable equipment to meet various regulatory  
requirements including GR 1089, ITU K.20, K.21, and K.45, IEC 60950, UL 60950, and  
TIA-968-A (formerly known as FCC Part 68) without the need of series resistors.  
Electrical Parameters  
Part  
V
V
V
I
I
I
I
C
O
DRM  
S
T
DRM  
S
T
H
Number *  
Volts  
58  
Volts  
77  
Volts  
µAmps  
mAmps  
800  
Amps  
2.2  
mAmps  
150  
pF  
60  
50  
40  
40  
P0640EC MC  
P1500EC MC  
P2600EC MC  
P3100EC MC  
4
4
4
4
5
5
5
5
140  
220  
275  
180  
300  
350  
800  
800  
800  
2.2  
2.2  
2.2  
150  
150  
150  
* For surge ratings, see table below.  
General Notes:  
All measurements are made at an ambient temperature of 25 °C. I applies to -40 °C through +85 °C temperature range.  
PP  
PP  
Listed SIDACtor devices are bi-directional. All electrical parameters and surge ratings apply to forward and reverse polarities.  
I
is a repetitive surge rating and is guaranteed for the life of the product.  
V
V
is measured at I  
DRM.  
DRM  
is measured at 100 V/µs.  
S
Special voltage (V and V  
) and holding current (I ) requirements are available upon request.  
H
S
DRM  
Off-state capacitance (C ) is measured at 1 MHz with a 2 V bias.  
O
Surge Ratings  
I
I
I
I
I
I
TSM  
PP  
PP  
PP  
PP  
PP  
2x10 µs  
8x20 µs  
10x160 µs  
10x560 µs  
10x1000 µs  
60 Hz  
Amps  
di/dt  
Series  
Amps  
Amps  
Amps  
Amps  
Amps  
Amps/µs  
C
500  
400  
200  
150  
100  
50  
500  
http://www.littelfuse.com  
+1 972-580-7777  
2 - 18  
© 2004 Littelfuse, Inc.  
SIDACtor® Data Book and Design Guide  
MicroCapacitance (MC) SIDACtor Device  
Thermal Considerations  
Package  
Symbol  
Parameter  
Operating Junction Temperature Range  
Storage Temperature Range  
Value  
-40 to +150  
-65 to +150  
90  
Unit  
°C  
°C  
T
J
TO-92  
T
S
R
Thermal Resistance: Junction to Ambient  
°C/W  
θJA  
+I  
tr = rise time to peak value  
td = decay time to half value  
IT  
Peak  
Value  
100  
50  
I
S  
I
H
Waveform = tr x td  
I
DRM  
-V  
+V  
Half Value  
VDRM  
VT  
VS  
0
tr  
td  
0
t – Time (µs)  
-I  
V-I Characteristics  
t x t Pulse Wave-form  
r d  
14  
12  
10  
8
2.0  
1.8  
1.6  
1.4  
1.2  
1.0  
0.8  
0.6  
0.4  
6
4
25 ˚C  
25 ˚C  
2
0
-4  
-6  
-8  
-40 -20  
0
20 40 60 80 100 120 140 160  
Case Temperature (TC) – ˚C  
-40 -20  
0
20 40 60 80 100 120 140 160  
Junction Temperature (TJ) – ˚C  
Normalized V Change versus Junction Temperature  
S
Normalized DC Holding Current versus Case Temperature  
© 2004 Littelfuse, Inc.  
2 - 19  
http://www.littelfuse.com  
+1 972-580-7777  
SIDACtor® Data Book and Design Guide  

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