P0640ECMC [LITTELFUSE]
MicroCapacitance (MC) SIDACtor Device; MicroCapacitance （ MC ）的SIDACtor设备
| 型号： | P0640ECMC |
| 厂家： | 
LITTELFUSE |
| 描述： | MicroCapacitance (MC) SIDACtor Device |
| 文件： | 总2页 (文件大小：123K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
MicroCapacitance (MC) SIDACtor Device
MicroCapacitance (MC) SIDACtor Device
The TO-92 MC SIDACtor series is intended for applications sensitive to load values.
Typically, high speed connections require a lower capacitance. CO values for MC devices
are 40% lower than a standard EC part.
This MC SIDACtor series is used to enable equipment to meet various regulatory
requirements including GR 1089, ITU K.20, K.21, and K.45, IEC 60950, UL 60950, and
TIA-968-A (formerly known as FCC Part 68) without the need of series resistors.
Electrical Parameters
Part
V
V
V
I
I
I
I
C
O
DRM
S
T
DRM
S
T
H
Number *
Volts
58
Volts
77
Volts
µAmps
mAmps
800
Amps
2.2
mAmps
150
pF
60
50
40
40
P0640EC MC
P1500EC MC
P2600EC MC
P3100EC MC
4
4
4
4
5
5
5
5
140
220
275
180
300
350
800
800
800
2.2
2.2
2.2
150
150
150
* For surge ratings, see table below.
General Notes:
•
•
•
•
•
•
•
All measurements are made at an ambient temperature of 25 °C. I applies to -40 °C through +85 °C temperature range.
PP
PP
Listed SIDACtor devices are bi-directional. All electrical parameters and surge ratings apply to forward and reverse polarities.
I
is a repetitive surge rating and is guaranteed for the life of the product.
V
V
is measured at I
DRM.
DRM
is measured at 100 V/µs.
S
Special voltage (V and V
) and holding current (I ) requirements are available upon request.
H
S
DRM
Off-state capacitance (C ) is measured at 1 MHz with a 2 V bias.
O
Surge Ratings
I
I
I
I
I
I
TSM
PP
PP
PP
PP
PP
2x10 µs
8x20 µs
10x160 µs
10x560 µs
10x1000 µs
60 Hz
Amps
di/dt
Series
Amps
Amps
Amps
Amps
Amps
Amps/µs
C
500
400
200
150
100
50
500
http://www.littelfuse.com
+1 972-580-7777
2 - 18
© 2004 Littelfuse, Inc.
SIDACtor® Data Book and Design Guide
MicroCapacitance (MC) SIDACtor Device
Thermal Considerations
Package
Symbol
Parameter
Operating Junction Temperature Range
Storage Temperature Range
Value
-40 to +150
-65 to +150
90
Unit
°C
°C
T
J
TO-92
T
S
R
Thermal Resistance: Junction to Ambient
°C/W
θJA
+I
tr = rise time to peak value
td = decay time to half value
IT
Peak
Value
100
50
I
S
I
H
Waveform = tr x td
I
DRM
-V
+V
Half Value
VDRM
VT
VS
0
tr
td
0
t – Time (µs)
-I
V-I Characteristics
t x t Pulse Wave-form
r d
14
12
10
8
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
6
4
25 ˚C
25 ˚C
2
0
-4
-6
-8
-40 -20
0
20 40 60 80 100 120 140 160
Case Temperature (TC) – ˚C
-40 -20
0
20 40 60 80 100 120 140 160
Junction Temperature (TJ) – ˚C
Normalized V Change versus Junction Temperature
S
Normalized DC Holding Current versus Case Temperature
© 2004 Littelfuse, Inc.
2 - 19
http://www.littelfuse.com
+1 972-580-7777
SIDACtor® Data Book and Design Guide
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