P1101AA2 [LITTELFUSE]

Surge Protection Circuit, PSIP3, TO-220, 3 PIN;
P1101AA2
型号: P1101AA2
厂家: LITTELFUSE    LITTELFUSE
描述:

Surge Protection Circuit, PSIP3, TO-220, 3 PIN

文件: 总3页 (文件大小:151K)
中文:  中文翻译
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Two-chip SLIC Protector Modified TO-220  
RoHS  
¨
This two-chip SLIC modified TO-220 unidirectional protector is constructed with a  
®
SIDACtor device and an integrated diode. It protects SLICs (Subscriber Line Interface  
1
(T)  
Circuits) from damage during transient voltage activity and enables line cards to comply  
with various regulatory requirements including GR 1089, ITU K.20, K.21 and K.45,  
IEC 60950, UL 60950, and TIA-968-A (formerly known as FCC Part 68).  
2
(G)  
3
(R)  
For details of specific design criteria, see Figure 6.40 through Figure 6.43 in Section 6,  
“Reference Designs” of this Telecom Design Guide.  
Electrical Parameters  
V
V
S
DRM  
Volts  
Volts  
Part  
V
T
V
I
I
S
I
T
I
H
F
DRM  
Number *  
Pins 1-2, 3-2  
Volts  
Volts  
µAmps  
mAmps  
Amps  
mAmps  
P0641A_2L  
P0721A_2L  
P0901A_2L  
P1101A_2L  
P1301A_2L  
P1701A_2L  
58  
65  
77  
88  
4
4
4
4
4
4
5
5
5
5
5
5
5
5
5
5
5
5
800  
2.2  
120  
800  
2.2  
120  
75  
98  
800  
2.2  
120  
95  
130  
160  
200  
800  
2.2  
120  
120  
160  
800  
2.2  
120  
800  
2.2  
120  
* “L” in part number indicates RoHS compliance. For non-RoHS compliant device, delete “L” from part number.  
For surge ratings, see table below.  
General Notes:  
All measurements are made at an ambient temperature of 25 °C. I applies to -40 °C through +85 °C temperature range.  
PP  
I
PP  
is a repetitive surge rating and is guaranteed for the life of the product.  
V
V
is measured at I  
DRM.  
DRM  
and V are measured at 100 V/µs.  
S
F
Special voltage (V and V  
) and holding current (I ) requirements are available upon request.  
DRM H  
S
Parallel capacitive loads may affect electrical parameters.  
Compliance with GR 1089 or UL 60950 power fault tests may require special design considerations. Contact the factory for further  
information.  
Surge Ratings in Amps  
I
PP  
0.2x310 * 2x10 *  
8x20 *  
10x160 * 10x560 * 5x320 * 10x360 * 10x1000 * 5x310 *  
I
TSM  
0.5x700 ** 2x10 ** 1.2x50 ** 10x160 ** 10x560 ** 9x720 ** 10x360 ** 10x1000 ** 10x700 ** 50 / 60 Hz  
di/dt  
Amps/µs  
500  
Amps  
20  
Amps  
150  
Amps  
150  
Amps  
90  
Amps  
50  
Amps  
75  
Amps  
75  
Amps  
45  
Amps  
75  
Amps  
20  
A
C
50  
500  
400  
200  
150  
200  
175  
100  
200  
50  
500  
* Current waveform in µs  
** Voltage waveform in µs  
www.littelfuse.com  
3 - 68  
© 2006 Littelfuse • Telecom Design Guide  
Two-chip SLIC Protector Modified TO-220  
Thermal Considerations  
Package  
Symbol  
Parameter  
Value  
-40 to +150  
-65 to +150  
50  
Unit  
°C  
T
Operating Junction Temperature Range  
Storage Temperature Range  
J
Modified  
TO-220  
T
°C  
S
R
Thermal Resistance: Junction to Ambient  
°C/W  
θJA  
PIN 1  
PIN 3  
PIN 2  
Capacitance Values  
pF  
Pin 1-2 / 3-2 (4-5 / 6-5)  
Tip-Ground, Ring-Ground  
pF  
Part Number  
P0641AA2L  
P0641AC2L  
P0721AA2L  
P0721AC2L  
P0901AA2L  
P0901AC2L  
P1101AA2L  
P1101AC2L  
P1301AA2L  
P1301AC2L  
P1701AA2L  
P1701AC2L  
MIN  
MAX  
200  
200  
190  
190  
180  
180  
160  
160  
160  
160  
125  
125  
MIN  
MAX  
40  
40  
35  
35  
30  
30  
25  
25  
25  
25  
25  
25  
20  
20  
20  
20  
20  
20  
15  
15  
15  
15  
15  
15  
105  
105  
105  
105  
105  
105  
105  
105  
105  
105  
105  
105  
Note: Off-state capacitance (C ) is measured at 1 MHz with a 2 V bias.  
O
Telecom Design Guide • © 2006 Littelfuse  
3 - 69  
www.littelfuse.com  
Two-chip SLIC Protector Modified TO-220  
+I  
tr = rise time to peak value  
VF  
td = decay time to half value  
Peak  
Value  
100  
50  
0
Waveform = tr x td  
VDRM  
VS  
VT  
-V  
+V  
Half Value  
IDRM  
IH  
IS  
IT  
tr  
td  
0
t – Time (µs)  
-I  
V-I Characteristics  
t x t Pulse Waveform  
r d  
14  
12  
10  
8
2.0  
1.8  
1.6  
1.4  
1.2  
1.0  
0.8  
0.6  
0.4  
6
4
25 ˚C  
25 ˚C  
2
0
-4  
-6  
-40 -20  
0
20 40 60 80 100 120 140 160  
-8  
Case Temperature (TC) – ˚C  
-40 -20  
0
20 40 60 80 100 120 140 160  
Junction Temperature (TJ) – ˚C  
Normalized V Change versus Junction Temperature  
S
Normalized DC Holding Current versus Case Temperature  
www.littelfuse.com  
3 - 70  
© 2006 Littelfuse • Telecom Design Guide  

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