P1504UCMC

更新时间:2024-09-18 01:57:41
品牌:LITTELFUSE
描述:Multiport MicroCapacitance (MC) SIDACtor Device

P1504UCMC 概述

Multiport MicroCapacitance (MC) SIDACtor Device 多端口MicroCapacitance ( MC )的SIDACtor设备 硅浪涌保护器

P1504UCMC 规格参数

是否Rohs认证: 不符合生命周期:Obsolete
零件包装代码:SOIC包装说明:SMALL OUTLINE, R-PDSO-G6
针数:6Reach Compliance Code:unknown
HTS代码:8541.30.00.80风险等级:5.18
Is Samacsys:N配置:2 BANKS, SERIES CONNECTED, CENTER TAP, 2 ELEMENTS
最大断态直流电压:140 VJESD-30 代码:R-PDSO-G6
JESD-609代码:e0湿度敏感等级:1
通态非重复峰值电流:50 A元件数量:4
端子数量:6封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):NOT SPECIFIED认证状态:Not Qualified
表面贴装:YES端子面层:Tin/Lead (Sn/Pb)
端子形式:GULL WING端子位置:DUAL
处于峰值回流温度下的最长时间:NOT SPECIFIED触发设备类型:SILICON SURGE PROTECTOR
Base Number Matches:1

P1504UCMC 数据手册

通过下载P1504UCMC数据手册来全面了解它。这个PDF文档包含了所有必要的细节,如产品概述、功能特性、引脚定义、引脚排列图等信息。

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Multiport MicroCapacitance (MC) SIDACtor Device  
Multiport MicroCapacitance (MC)  
SIDACtor Device  
The multiport MC line protector is an integrated, multichip solution for protecting  
multiple twisted pair from overvoltage conditions. It is intended for applications  
sensitive to load values. Typically, high speed connections require lower capacitance.  
1
(R )  
6
(T )  
1
2
C
values for the MC devices are 40% lower than standard UC devices  
O
5
(G )  
2
(G )  
2
1
Based on a six-pin surface mount SOIC package, it is equivalent to four discrete DO-  
214AA or two TO-220 packages, which makes it ideal for densely populated, high-  
speed line cards that cannot afford PCB inefficiencies or the use of series power  
resistors. Surge current ratings up to 500 A are available.  
3
(T )  
4
(R )  
1
2
SIDACtor devices are used to enable equipment to meet various regulatory requirements including GR 1089,  
ITU K.20, K.21, and K.45, IEC 60950, UL 60950, and TIA-968-A (formerly known as FCC Part 68).  
Electrical Parameters  
V
V
V
V
S
DRM  
S
DRM  
Volts  
Volts  
Volts  
Volts  
Part  
V
I
I
I
I
C
O
T
DRM  
S
T
H
Number *  
Pins 1-2, 3-2, 4-5, 6-5  
Pins 1-3, 4-6  
Volts  
µAmps  
mAmps Amps mAmps  
pF  
30  
30  
30  
30  
30  
25  
25  
25  
20  
20  
20  
20  
20  
P0084UC MC  
P0304UC MC  
P0644UC MC  
P0724UC MC  
P0904UC MC  
P1104UC MC  
P1304UC MC  
P1504UC MC  
P1804UC MC  
P2304UC MC  
P2604UC MC  
P3104UC MC  
P3504UC MC  
6
25  
25  
40  
12  
50  
4
4
4
4
4
4
4
4
4
4
4
4
4
5
5
5
5
5
5
5
5
5
5
5
5
5
800  
800  
800  
800  
800  
800  
800  
800  
800  
800  
800  
800  
800  
2.2  
2.2  
2.2  
2.2  
2.2  
2.2  
2.2  
2.2  
2.2  
2.2  
2.2  
2.2  
2.2  
50  
50  
50  
80  
58  
77  
116  
130  
150  
180  
240  
280  
340  
380  
440  
550  
640  
154  
176  
196  
260  
320  
360  
440  
520  
600  
700  
800  
150  
150  
150  
150  
150  
150  
150  
150  
150  
150  
150  
65  
88  
75  
98  
90  
130  
160  
180  
220  
260  
300  
350  
400  
120  
140  
170  
190  
220  
275  
320  
* For surge ratings, see table below.  
General Notes:  
All measurements are made at an ambient temperature of 25 °C. I applies to -40 °C through +85 °C temperature range.  
PP  
PP  
Listed SIDACtor devices are bi-directional. All electrical parameters and surge ratings apply to forward and reverse polarities.  
I
is a repetitive surge rating and is guaranteed for the life of the product.  
V
V
is measured at I  
DRM.  
DRM  
is measured at 100 V/µs.  
S
Special voltage (V and V  
) and holding current (I ) requirements are available upon request.  
H
S
DRM  
Off-state capacitance (C ) is measured at 1 MHz with a 2 V bias.  
O
Surge Ratings  
I
I
I
I
I
I
TSM  
PP  
PP  
PP  
PP  
PP  
2x10 µs  
8x20 µs  
10x160 µs  
10x560 µs  
10x1000 µs  
60 Hz  
Amps  
di/dt  
Series  
Amps  
Amps  
Amps  
Amps  
Amps  
Amps/µs  
C
500  
400  
200  
150  
100  
50  
500  
http://www.littelfuse.com  
+1 972-580-7777  
2 - 24  
© 2004 Littelfuse, Inc.  
SIDACtor® Data Book and Design Guide  
Multiport MicroCapacitance (MC) SIDACtor Device  
Thermal Considerations  
Package  
Symbol  
Parameter  
Operating Junction Temperature Range  
Storage Temperature Range  
Value  
-40 to +150  
-65 to +150  
60  
Unit  
°C  
°C  
Modified MS-013  
T
T
J
6
5
4
S
R
Thermal Resistance: Junction to Ambient  
°C/W  
θJA  
1
2
3
+I  
tr = rise time to peak value  
td = decay time to half value  
IT  
Peak  
Value  
100  
50  
I
S  
I
H
Waveform = tr x td  
I
DRM  
-V  
+V  
Half Value  
VDRM  
VT  
VS  
0
tr  
td  
0
t – Time (µs)  
-I  
V-I Characteristics  
t x t Pulse Wave-form  
r d  
14  
12  
10  
8
2.0  
1.8  
1.6  
1.4  
1.2  
1.0  
0.8  
0.6  
0.4  
6
4
25 ˚C  
25 ˚C  
2
0
-4  
-6  
-8  
-40 -20  
0
20 40 60 80 100 120 140 160  
Case Temperature (TC) – ˚C  
-40 -20  
0
20 40 60 80 100 120 140 160  
Junction Temperature (TJ) – ˚C  
Normalized V Change versus Junction Temperature  
S
Normalized DC Holding Current versus Case Temperature  
© 2004 Littelfuse, Inc.  
2 - 25  
http://www.littelfuse.com  
+1 972-580-7777  
SIDACtor® Data Book and Design Guide  

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