P1553ACMC [LITTELFUSE]
Balanced Three-chip MicroCapacitance (MC) SIDACtor Device; 平衡三芯片MicroCapacitance （ MC ）的SIDACtor设备
| 型号： | P1553ACMC |
| 厂家： | 
LITTELFUSE |
| 描述： | Balanced Three-chip MicroCapacitance (MC) SIDACtor Device |
| 文件： | 总2页 (文件大小：124K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Balanced Three-chip MicroCapacitance (MC) SIDACtor Device
Balanced Three-chip MicroCapacitance (MC)
SIDACtor Device
The balanced three-chip TO-220 MC SIDACtor solid state device protects telecommunica-
tion equipment in high-speed applications that are sensitive to load values and that require
a lower capacitance. CO values for the MC are 40% lower than a standard AC part.
1
3
2
This MC SIDACtor series is used to enable equipment to meet various regulatory
requirements including GR 1089, ITU K.20, K.21, and K.45, IEC 60950, UL 60950, and
TIA-968-A (formerly known as FCC Part 68) without the need of series resistors.
Electrical Parameters
V
V
V
V
S
DRM
S
DRM
Volts
Volts
Volts
Volts
Part
V
I
I
I
I
C
O
T
DRM
S
T
H
Number *
Pins 1-2, 2-3
Pins 1-3
Volts
µAmps
mAmps
800
Amps
2.2
mAmps
150
pF
40
40
40
40
30
30
30
30
P1553AC MC
P1803AC MC
P2103AC MC
P2353AC MC
P2703AC MC
P3203AC MC
P3403AC MC
P5103AC MC
130
150
170
200
230
270
300
420
180
210
250
270
300
350
400
600
130
150
170
200
230
270
300
420
180
210
250
270
300
350
400
600
8
8
8
8
8
8
8
8
5
5
5
5
5
5
5
5
800
800
800
800
800
800
800
2.2
2.2
2.2
2.2
2.2
2.2
2.2
150
150
150
150
150
150
150
* For surge ratings, see table below.
General Notes:
•
•
•
•
•
•
•
•
All measurements are made at an ambient temperature of 25 °C. I applies to -40 °C through +85 °C temperature range.
PP
PP
Listed SIDACtor devices are bi-directional. All electrical parameters and surge ratings apply to forward and reverse polarities.
I
is a repetitive surge rating and is guaranteed for the life of the product.
V
V
is measured at I
DRM.
DRM
is measured at 100 V/µs.
S
Special voltage (V and V
) and holding current (I ) requirements are available upon request.
H
S
DRM
Off-state capacitance (C ) is measured between Pins 1-2 and 3-2 at 1 MHz with a 2 V bias.
Device is designed to meet balance requirements of GTS 8700 and GR 974.
O
Surge Ratings
I
I
I
I
I
I
TSM
PP
PP
PP
PP
PP
2x10 µs
8x20 µs
10x160 µs
10x560 µs
10x1000 µs
60 Hz
Amps
di/dt
Series
Amps
Amps
Amps
Amps
Amps
Amps/µs
C
500
400
200
150
100
50
500
http://www.littelfuse.com
+1 972-580-7777
2 - 36
© 2004 Littelfuse, Inc.
SIDACtor® Data Book and Design Guide
Balanced Three-chip MicroCapacitance (MC) SIDACtor Device
Thermal Considerations
Package
Symbol
Parameter
Operating Junction Temperature Range
Storage Temperature Range
Value
-40 to +150
-65 to +150
50
Unit
°C
°C
T
J
Modified
TO-220
T
S
R
Thermal Resistance: Junction to Ambient
°C/W
θJA
PIN 1
PIN 3
PIN 2
+I
tr = rise time to peak value
td = decay time to half value
IT
Peak
Value
100
50
I
S
I
H
Waveform = tr x td
I
DRM
-V
+V
Half Value
VDRM
VT
VS
0
tr
td
0
t – Time (µs)
-I
V-I Characteristics
t x t Pulse Wave-form
r d
14
12
10
8
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
6
4
25 ˚C
25 ˚C
2
0
-4
-6
-8
-40 -20
0
20 40 60 80 100 120 140 160
Case Temperature (TC) – ˚C
-40 -20
0
20 40 60 80 100 120 140 160
Junction Temperature (TJ) – ˚C
Normalized V Change versus Junction Temperature
S
Normalized DC Holding Current versus Case Temperature
© 2004 Littelfuse, Inc.
2 - 37
http://www.littelfuse.com
+1 972-580-7777
SIDACtor® Data Book and Design Guide
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