P1800ECMCL [LITTELFUSE]
MicroCapacitance SIDACtor Device; MicroCapacitance的SIDACtor设备
| 型号： | P1800ECMCL |
| 厂家： | 
LITTELFUSE |
| 描述： | MicroCapacitance SIDACtor Device |
| 文件： | 总3页 (文件大小：97K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
0LFUR&DSDFLWDQFHꢀꢁ0&ꢂꢀ6,'$&WRUꢀ'HYLFH
RoHS
¨
These TO-92 MC SIDACtor devices are intended for applications sensitive to load values.
Typically, high speed connections, such as xDSL and T1/E1, require a lower capacitance.
CO values for the MicroCapacitance device are 40 percent lower than a standard EC part.
This MC SIDACtor series enables equipment to comply with various regulatory
requirements including GR 1089, ITU K.20, K.21, and K.45, IEC 60950, UL 60950, and
TIA-968-A (formerly known as FCC Part 68) without the need of series resistors.
Electrical Parameters
Part
Number *
V
Volts
V
Volts
V
Volts
I
I
I
I
H
DRM
S
T
DRM
S
T
μAmps
mAmps
800
800
800
800
800
800
800
800
800
800
800
800
800
Amps
2.2
2.2
2.2
2.2
2.2
2.2
2.2
2.2
2.2
2.2
2.2
2.2
2.2
mAmps
P0080ECMCL
P0300ECMCL
P0640ECMCL
P0720ECMCL
P0900ECMCL
P1100ECMCL
P1300ECMCL
P1500ECMCL
P1800ECMCL
P2300ECMCL
P2600ECMCL
P3100ECMCL
P3500ECMCL
6
25
4
4
4
4
4
4
4
4
4
4
4
4
4
5
5
5
5
5
5
5
5
5
5
5
5
5
50
25
40
50
58
77
150
150
150
150
150
150
150
150
150
150
150
65
88
75
98
90
130
160
180
220
260
300
350
400
120
140
170
190
220
275
320
* “L” in part number indicates RoHS compliance. For non-RoHS compliant device, delete “L” from part number.
For surge ratings, see table below.
General Notes:
•
•
•
•
•
•
All measurements are made at an ambient temperature of 25 °C. I applies to -+40 °C through +85 °C temperature range.
PP
I
is a repetitive surge rating and is guaranteed for the life of the product.
PP
Listed SIDACtor devices are bi-directional. All electrical parameters and surge ratings apply to forward and reverse polarities.
V
V
is measured at I
DRM.
is measured at 100 V/μs.
DRM
S
Special voltage (V and V
) and holding current (I ) requirements are available upon request.
H
S
DRM
Surge Ratings in Amps
I
PP
0.2x310 * 2x10 *
8x20 *
10x160 * 10x560 * 5x320 *
10x360 * 10x1000 *
5x310 *
I
TSM
0.5x700 ** 2x10 ** 1.2x50 ** 10x160 ** 10x560 ** 9x720 ** 10x360 ** 10x1000 ** 10x700 ** 50 / 60 Hz
di/dt
Amps/μs
500
Amps
Amps
Amps
Amps
Amps
Amps
Amps
Amps
Amps
Amps
C
50
500
400
200
150
200
175
100
200
30
* Current waveform in μs
** Voltage waveform in μs
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© 2006 Littelfuse, Inc. • Telecom Design Guide
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Thermal Considerations
Package
Symbol
Parameter
Operating Junction Temperature Range
Storage Temperature Range
Value
-40 to +150
-65 to +150
90
Unit
°C
T
J
TO-92
T
°C
S
R
Thermal Resistance: Junction to Ambient
°C/W
θJA
Capacitance Values
pF
Part Number
P0080ECMCL
P0300ECMCL
P0640ECMCL
P0720ECMCL
P0900ECMCL
P1100ECMCL
P1300ECMCL
P1500ECMCL
P1800ECMCL
P2300ECMCL
P2600ECMCL
P3100ECMCL
P3500ECMCL
MIN
MAX
75
45
85
75
70
70
60
55
50
50
45
45
40
35
25
55
50
45
45
40
35
35
30
30
30
25
Note: Off-state capacitance (C ) is measured at 1 MHz with a 2 V bias.
O
Telecom Design Guide • © 2006 Littelfuse, Inc.
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0LFUR&DSDFLWDQFHꢀꢁ0&ꢂꢀ6,'$&WRUꢀ'HYLFH
+I
tr = rise time to peak value
t
d = decay time to half value
Peak
Value
IT
100
50
0
IS
IH
Waveform = tr x td
IDRM
-V
+V
Half Value
VDRM
VT
VS
tr
td
0
t – Time (μs)
-I
V-I Characteristics
t x t Pulse Waveform
r d
14
12
10
8
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
6
4
25 ˚C
25 ˚C
2
0
-4
-6
-40 -20
0
20 40 60 80 100 120 140 160
-8
-40 -20
0
20 40 60 80 100 120 140 160
Case Temperature (TC) – ˚C
Junction Temperature (TJ) – ˚C
Normalized V Change versus Junction Temperature
S
Normalized DC Holding Current versus Case Temperature
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© 2006 Littelfuse, Inc. • Telecom Design Guide
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