P2000AA61A [LITTELFUSE]
Trigger Device;
| 型号： | P2000AA61A |
| 厂家： | 
LITTELFUSE |
| 描述： | Trigger Device |
| 文件： | 总2页 (文件大小：122K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
SIDACtor Device
SIDACtor Device
The modified TO-220 Type 61 SIDACtor solid state protection device can be used in
telecommunication protection applications that do not reference earth ground.
SIDACtor devices are used to enable equipment to meet various regulatory requirements
including GR 1089, ITU K.20, K.21 and K.45, IEC 60950, UL 60950, and TIA-968 (formerly
known as FCC Part 68).
Electrical Parameters
Part
V
V
V
I
I
I
I
C
O
DRM
S
T
DRM
S
T
H
Number *
Volts
180
200
220
240
270
300
Volts
220
240
260
290
330
360
Volts
µAmps
mAmps
800
Amps
2.2
mAmps
150
pF
30
30
30
30
30
30
P2000AA61
P2200AA61
P2400AA61
P2500AA61
P3000AA61
P3300AA61
4
4
4
4
4
4
5
5
5
5
5
5
800
800
800
800
2.2
2.2
2.2
2.2
150
150
150
150
800
2.2
150
* For surge ratings, see table below.
General Notes:
•
•
•
•
•
•
•
All measurements are made at an ambient temperature of 25 °C. I applies to -40 °C through +85 °C temperature range.
PP
PP
Listed SIDACtor devices are bi-directional. All electrical parameters and surge ratings apply to forward and reverse polarities.
I
is a repetitive surge rating and is guaranteed for the life of the product.
V
V
is measured at I
DRM.
DRM
is measured at 100 V/µs.
S
Special voltage (V and V
) and holding current (I ) requirements are available upon request.
H
S
DRM
Off-state capacitance is measured at 1 MHz with a 2 V bias and is a typical value.
Surge Ratings
I
I
I
I
I
I
I
I
TSM
PP
PP
PP
PP
PP
PP
PP
0.2x310 µs
2x10 µs
8x20 µs
10x160 µs
10x560 µs
5x320 µs
10x1000 µs
60 Hz
Amps
di/dt
Series
Amps
Amps
Amps
Amps
Amps
Amps
Amps
Amps/µs
A
20
150
150
90
50
75
45
20
500
http://www.teccor.com
+1 972-580-7777
2 - 28
© 2004 Littelfuse LP
SIDACtor® Data Book and Design Guide
SIDACtor Device
Thermal Considerations
Package
Symbol
Parameter
Operating Junction Temperature Range
Storage Temperature Range
Value
-40 to +150
-65 to +150
50
Unit
°C
°C
T
J
Modified
TO-220
Type 61
T
S
R
Thermal Resistance: Junction to Ambient
°C/W
θJA
+I
tr = rise time to peak value
td = decay time to half value
IT
Peak
Value
100
50
I
S
I
H
Waveform = tr x td
I
DRM
-V
+V
Half Value
VDRM
VT
VS
0
tr
td
0
t – Time (µs)
-I
V-I Characteristics
t x t Pulse Wave-form
r d
14
12
10
8
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
6
4
25 ˚C
25 ˚C
2
0
-4
-6
-8
-40 -20
0
20 40 60 80 100 120 140 160
Case Temperature (TC) – ˚C
-40 -20
0
20 40 60 80 100 120 140 160
Junction Temperature (TJ) – ˚C
Normalized V Change versus Junction Temperature
S
Normalized DC Holding Current versus Case Temperature
© 2004 Littelfuse LP
2 - 29
http://www.teccor.com
+1 972-580-7777
SIDACtor® Data Book and Design Guide
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