P2100SCMCL [LITTELFUSE]
MicroCapacitance (MC) SC SIDACtor㈢ Device; MicroCapacitance （ MC ） SC SIDACtor®器件
| 型号： | P2100SCMCL |
| 厂家： | 
LITTELFUSE |
| 描述： | MicroCapacitance (MC) SC SIDACtor㈢ Device |
| 文件： | 总3页 (文件大小：153K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
MicroCapacitance (MC) SC SIDACtor® Device
RoHS
These DO-214AA SCMC SIDACtor devices are intended for applications sensitive to load
values. Typically, high speed connections, such as xDSL and T1/E1, require a lower
capacitance. CO values for the MicroCapacitance device are 40 percent lower than a
standard SC part.
This SCMC SIDACtor series enables equipment to comply with various regulatory
requirements including GR 1089, IEC 60950, UL 60950, TIA-968-A (formerly known as
FCC Part 68), and ITU K.20, K.21, and K.45.
Electrical Parameters
Part
V
V
S
V
I
I
S
I
I
H
DRM
T
DRM
T
Number *
Volts
Volts
Volts
µAmps
mAmps
800
800
800
800
800
800
800
800
800
800
800
800
800
800
800
800
800
800
Amps
2.2
2.2
2.2
2.2
2.2
2.2
2.2
2.2
2.2
2.2
2.2
2.2
2.2
2.2
2.2
2.2
2.2
2.2
mAmps
P0080SCMCL
P0220SCMCL
P0300SCMCL
P0640SCMCL
P0720SCMCL
P0900SCMCL
P1100SCMCL
P1200SCMCL
P1300SCMCL
P1500SCMCL
P1800SCMCL
P2000SCMCL
P2100SCMCL
P2300SCMCL
P2500SCMCL
P2600SCMCL
P3100SCMCL
P3500SCMCL
6
25
4
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
50
15
32
4
50
25
40
4
50
58
77
4
150
150
150
150
120
150
150
150
120
150
150
120
150
150
150
65
88
4
75
98
4
90
130
130
160
180
220
220
240
260
290
300
350
400
4
100
120
140
170
180
180
190
230
220
275
320
4
4
4
4
4
4
4
4
4
4
4
* “L” in part number indicates RoHS compliance. For non-RoHS compliant device, delete “L” from part number.
For surge ratings, see table below.
General Notes:
•
•
•
•
•
•
All measurements are made at an ambient temperature of 25 °C. I applies to -40 °C through +85 °C temperature range.
PP
I
PP
is a repetitive surge rating and is guaranteed for the life of the product.
Listed SIDACtor devices are bi-directional. All electrical parameters and surge ratings apply to forward and reverse polarities.
V
V
is measured at I
DRM.
is measured at 100 V/µs.
DRM
S
Special voltage (V and V
) and holding current (I ) requirements are available upon request.
DRM H
S
Surge Ratings in Amps
I
PP
0.2x310 * 2x10 *
8x20 *
10x160 * 10x560 * 5x320 * 10x360 * 10x1000 * 5x310 *
I
TSM
0.5x700 ** 2x10 ** 1.2x50 ** 10x160 ** 10x560 ** 9x720 ** 10x360 ** 10x1000 ** 10x700 ** 50 / 60 Hz
di/dt
Amps/µs
500
Amps
Amps
Amps
Amps
Amps
Amps
Amps
Amps
Amps
Amps
C
50
500
400
200
150
200
175
100
200
30
* Current waveform in µs
** Voltage waveform in µs
Telecom Design Guide • © 2006 Littelfuse
3 - 5
www.littelfuse.com
MicroCapacitance (MC) SC SIDACtor® Device
Thermal Considerations
Package
Symbol
Parameter
Operating Junction Temperature Range
Storage Temperature Range
Value
-40 to +150
-65 to +150
90
Unit
°C
DO-214AA
T
J
T
°C
S
R
Thermal Resistance: Junction to Ambient
°C/W
θJA
Capacitance Values
pF
Part Number
P0080SCMCL
P0220SCMCL
P0300SCMCL
P0640SCMCL
P0720SCMCL
P0900SCMCL
P1100SCMCL
P1200SCMCL
P1300SCMCL
P1500SCMCL
P1800SCMCL
P2000SCMCL
P2100SCMCL
P2300SCMCL
P2500SCMCL
P2600SCMCL
P3100SCMCL
P3500SCMCL
MIN
35
30
25
55
50
45
45
45
40
35
35
35
30
30
30
30
30
25
MAX
75
65
45
85
75
70
70
65
60
55
50
50
50
50
45
45
45
40
Note: Off-state capacitance (C ) is measured at 1 MHz with a 2 V bias.
O
www.littelfuse.com
3 - 6
© 2006 Littelfuse • Telecom Design Guide
MicroCapacitance (MC) SC SIDACtor® Device
+I
tr = rise time to peak value
td = decay time to half value
IT
Peak
Value
100
50
0
IS
IH
Waveform = tr x td
IDRM
-V
+V
Half Value
VDRM
VT
VS
tr
td
0
t – Time (µs)
-I
V-I Characteristics
t x t Pulse Waveform
r d
14
12
10
8
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
6
4
25 ˚C
25 ˚C
2
0
-4
-6
-40 -20
0
20 40 60 80 100 120 140 160
-8
Case Temperature (TC) – ˚C
-40 -20
0
20 40 60 80 100 120 140 160
Junction Temperature (TJ) – ˚C
Normalized V Change versus Junction Temperature
S
Normalized DC Holding Current versus Case Temperature
Telecom Design Guide • © 2006 Littelfuse
3 - 7
www.littelfuse.com
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