P2600EBAP [LITTELFUSE]
Trigger Device;
| 型号： | P2600EBAP |
| 厂家： | 
LITTELFUSE |
| 描述： | Trigger Device |
| 文件： | 总2页 (文件大小：123K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
SIDACtor Device
SIDACtor Device
TO-92 SIDACtor solid state protection devices protect telecommunications equipment such
as modems, line cards, fax machines, and other CPE.
SIDACtor devices are used to enable equipment to meet various regulatory requirements
including GR 1089, ITU K.20, K.21, and K.45, IEC 60950, UL 60950, and TIA-968 (formerly
known as FCC Part 68)
.
Electrical Parameters
Part
V
V
V
I
I
I
I
C
O
DRM
S
T
DRM
S
T
H
Number *
Volts
6
Volts
25
Volts
µAmps
mAmps
800
800
800
800
800
800
800
800
800
800
800
800
800
Amps
2.2
2.2
2.2
2.2
2.2
2.2
2.2
2.2
2.2
2.2
2.2
2.2
2.2
mAmps
50
pF
100
110
50
50
50
40
40
40
30
30
30
30
30
P0080E_
P0300E_
P0640E_
P0720E_
P0900E_
P1100E_
P1300E_
P1500E_
P1800E_
P2300E_
P2600E_
P3100E_
P3500E_
4
4
4
4
4
4
4
4
4
4
4
4
4
5
5
5
5
5
5
5
5
5
5
5
5
5
25
58
65
75
40
77
88
98
130
160
180
220
260
300
350
400
50
150
150
150
150
150
150
150
150
150
150
150
90
120
140
170
190
220
275
320
* For individual “EA”, “EB”, and “EC” surge ratings, see table below.
General Notes:
•
•
•
•
•
•
•
All measurements are made at an ambient temperature of 25 °C. I applies to -40 °C through +85 °C temperature range.
PP
PP
Listed SIDACtor devices are bi-directional. All electrical parameters and surge ratings apply to forward and reverse polarities.
I
is a repetitive surge rating and is guaranteed for the life of the product.
V
V
is measured at I
DRM.
DRM
is measured at 100 V/µs.
S
Special voltage (V and V
) and holding current (I ) requirements are available upon request.
H
S
DRM
Off-state capacitance (C ) is measured at 1 MHz with a 2 V bias and is a typical value for “EA” and “EB” product. “EC” capacitance
O
is approximately 2x the listed value. The off-state capacitance of the P0080EB is equal to the “EC” device.
Surge Ratings
I
I
I
I
I
I
TSM
PP
PP
PP
PP
PP
2x10 µs
8x20 µs
10x160 µs
10x560 µs
10x1000 µs
60 Hz
Amps
di/dt
Series
Amps
Amps
Amps
Amps
Amps
Amps/µs
A
B
C
150
250
500
150
250
400
90
150
200
50
100
150
45
80
100
20
30
50
500
500
500
http://www.littelfuse.com
+1 972-580-7777
2 - 16
© 2004 Littelfuse, Inc.
SIDACtor® Data Book and Design Guide
SIDACtor Device
Thermal Considerations
Package
Symbol
Parameter
Operating Junction Temperature Range
Storage Temperature Range
Value
-40 to +150
-65 to +150
90
Unit
°C
°C
T
J
TO-92
T
S
R
Thermal Resistance: Junction to Ambient
°C/W
θJA
+I
tr = rise time to peak value
td = decay time to half value
IT
Peak
Value
100
50
I
S
I
H
Waveform = tr x td
I
DRM
-V
+V
Half Value
VDRM
VT
VS
0
tr
td
0
t – Time (µs)
-I
V-I Characteristics
t x t Pulse Wave-form
r d
14
12
10
8
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
6
4
25 ˚C
25 ˚C
2
0
-4
-6
-8
-40 -20
0
20 40 60 80 100 120 140 160
Case Temperature (TC) – ˚C
-40 -20
0
20 40 60 80 100 120 140 160
Junction Temperature (TJ) – ˚C
Normalized V Change versus Junction Temperature
S
Normalized DC Holding Current versus Case Temperature
© 2004 Littelfuse, Inc.
2 - 17
http://www.littelfuse.com
+1 972-580-7777
SIDACtor® Data Book and Design Guide
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