P3502SB [LITTELFUSE]

Silicon Surge Protector, 30A, DO-214AA, DO-214AA, 2 PIN;
P3502SB
型号: P3502SB
厂家: LITTELFUSE    LITTELFUSE
描述:

Silicon Surge Protector, 30A, DO-214AA, DO-214AA, 2 PIN

文件: 总2页 (文件大小:113K)
中文:  中文翻译
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Ethernet/10BaseT/100BaseT/1000BaseT Protector  
Ethernet/10BaseT/100BaseT/1000BaseT  
Protector  
The DO-214AA SIDACtor Ethernet protection series is intended for applications sensitive to  
load values. Typically, high speed connections require a lower capacitance. CO values are  
40% lower than standard devices.  
SIDACtor devices are used to enable equipment to meet various regulatory requirements  
including GR 1089, ITU K.20, K.21 and K.45, IEC 60950, UL 60950, and TIA-968-A  
(formerly known as FCC Part 68).  
Electrical Parameters  
Part  
V
V
V
I
I
I
I
C
O
DRM  
S
T
DRM  
S
T
H
Number *  
Volts  
15  
Volts  
32  
Volts  
µAmps  
mAmps  
800  
800  
800  
800  
800  
800  
800  
800  
800  
800  
800  
800  
800  
800  
Amps  
2.2  
2.2  
2.2  
2.2  
2.2  
2.2  
2.2  
2.2  
2.2  
2.2  
2.2  
2.2  
2.2  
2.2  
mAmps  
50  
pF  
50  
25  
25  
25  
20  
20  
20  
20  
15  
15  
15  
15  
15  
15  
P0220S_  
P0642S_**  
P0722S_**  
P0902S_**  
P1102S_**  
P1302S_  
P1402S_  
P1502S_  
P1802S_  
P2302S_  
P2602S_  
P3002S_  
P3502S_  
P4802S_  
4
4
4
4
4
4
4
4
4
4
4
4
4
4
5
5
5
5
5
5
5
5
5
5
5
5
5
5
58  
65  
75  
90  
77  
88  
98  
120  
120  
120  
120  
150  
120  
150  
150  
150  
150  
120  
150  
120  
130  
160  
180  
180  
220  
260  
300  
360  
400  
600  
120  
140  
140  
170  
190  
220  
280  
320  
440  
* For surge ratings, see table below.  
** Contact factory for release date.  
General Notes:  
All measurements are made at an ambient temperature of 25 °C. I applies to -40 °C through +85 °C temperature range.  
PP  
PP  
Listed SIDACtor devices are bi-directional. All electrical parameters and surge ratings apply to forward and reverse polarities.  
I
is a repetitive surge rating and is guaranteed for the life of the product.  
V
V
is measured at I  
DRM.  
DRM  
is measured at 100 V/µs.  
S
Special voltage (V and V  
) and holding current (I ) requirements are available upon request.  
H
S
DRM  
Off-state capacitance (C ) is measured at 1 MHz with a 2 V bias.  
O
Surge Ratings  
I
I
I
I
I
I
TSM  
PP  
PP  
PP  
PP  
PP  
2x10 µs  
8x20 µs  
10x160 µs  
10x560 µs  
10x1000 µs  
60 Hz  
Amps  
di/dt  
Series  
Amps  
Amps  
Amps  
Amps  
Amps  
Amps/µs  
A
B
150  
250  
150  
250  
90  
150  
50  
100  
45  
80  
20  
30  
500  
500  
http://www.littelfuse.com  
+1 972-580-7777  
2 - 14  
© 2004 Littelfuse, Inc.  
SIDACtor® Data Book and Design Guide  
Ethernet/10BaseT/100BaseT/1000BaseT Protector  
Thermal Considerations  
Package  
DO-214AA  
Symbol  
Parameter  
Operating Junction Temperature Range  
Storage Temperature Range  
Value  
-40 to +150  
-65 to +150  
90  
Unit  
°C  
°C  
T
J
T
S
R
Thermal Resistance: Junction to Ambient  
°C/W  
θJA  
+I  
tr = rise time to peak value  
td = decay time to half value  
IT  
Peak  
Value  
100  
50  
I
S  
I
H
Waveform = tr x td  
I
DRM  
-V  
+V  
Half Value  
VDRM  
VT  
VS  
0
tr  
td  
0
t – Time (µs)  
-I  
V-I Characteristics  
t x t Pulse Wave-form  
r d  
14  
12  
10  
8
2.0  
1.8  
1.6  
1.4  
1.2  
1.0  
0.8  
0.6  
0.4  
6
4
25 ˚C  
25 ˚C  
2
0
-4  
-6  
-8  
-40 -20  
0
20 40 60 80 100 120 140 160  
Case Temperature (TC) – ˚C  
-40 -20  
0
20 40 60 80 100 120 140 160  
Junction Temperature (TJ) – ˚C  
Normalized V Change versus Junction Temperature  
S
Normalized DC Holding Current versus Case Temperature  
© 2004 Littelfuse, Inc.  
2 - 15  
http://www.littelfuse.com  
+1 972-580-7777  
SIDACtor® Data Book and Design Guide  

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