QJXX12RH4 [LITTELFUSE]
12 Amp High Temperature Alternistor Triacs;
| 型号： | QJXX12RH4 |
| 厂家： | 
LITTELFUSE |
| 描述： | 12 Amp High Temperature Alternistor Triacs |
| 文件： | 总8页 (文件大小：596K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Thyristors
12 Amp High Temperature Alternistor Triacs
RoHS
QJ8012xHx Series
Description
This 12A high temperature AlternistorTRIAC, offered in
TO-220AB, TO-220 isolated andTO-263 package, has 150°C
maximum junction temperature and 120A ITSM(60Hz).
This series enables easier thermal management and higher
surge handling capability in AC power control applications
such as heater control, motor speed control, lighting
controls, and static switching relays. AlternistorTRIAC
operates in quadrants I, II, & III and offers high performance
in applications requiring high commutation capability.
Features & Benefits
• Recognized to UL 1557
as an Electrically Isolated
Semiconductor Devices
• No contacts to wear
out from reaction of
switching events
Agency Recognitions
Agency
Agency File Number
• Glass – passivated
junctions
• Restricted (or limited) RFI
generation, depending
on activation point sine
wave
E71639*
• Surge capability up to
120 A
* - L Package only
• Requires only a small
gate activation pulse in
each half-cycle
Main Features
• The L-package has
an isolation rating of
2500VRMS
Symbol
IT(RMS)
Value
12
Unit
A
• RoHS Compliant
• Solid-state switching
eliminates arcing or
contact bounce that
create voltage transients
VDRM/VRRM
IGT (Q1)
800
V
35 or 50
mA
Schematic Symbol
Applications
Excellent for AC switching and phase control applications
such as heating, lighting, and motor speed controls.
MT2
MT1
Typical applications are AC solid-state switches, light
dimmers, power tools, lawn care equipment, home/brown
goods and white goods appliances.
G
AlternistorTriacs (no snubber required) are used in
applications with extremely inductive loads requiring
highest commutation performance.
Internally constructed isolated packages are offered for
ease of heat sinking with highest isolation voltage.
QJ8012xHx Series
©2019 Littelfuse, Inc
Specifications are subject to change without notice.
Revised: 07/26/19
Thyristors
12 Amp High Temperature Alternistor Triacs
Absolute Maximum Ratings — Alternistor (3 Quadrants)
Symbol Parameter
IT(RMS) RMS on-state current (full sine wave)
Value
Unit
QJxx12LHy
TC = 120°C
TC = 132°C
12
A
QJxx12RHy
QJxx12NHy
f = 50 Hz
f = 60 Hz
t = 20 ms
t = 16.7 ms
tp = 8.3 ms
TJ = 150°C
TJ = 150°C
TJ = 150°C
110
Non repetitive surge peak on-state current
(full cycle, TJ initial = 25°C)
ITSM
A
120
I2t
I2t Value for fusing
60
70
A2s
A/μs
A
di/dt
IGTM
Critical rate of rise of on-state current
Peak gate trigger current
f = 60 Hz
4
tp = 20 μs
PG(AV)
Tstg
Average gate power dissipation
Storage temperature range
0.5
W
-40 to 150
-40 to 150
VDRM/VRRM+200
°C
°C
V
Operating junction temperature range
Peak non-repetitive blocking voltage
TJ
Pulse Width = 100μs
VDSM/VRSM
Note: xx = voltage/10, y = sensitivity
Electrical Characteristics (TJ = 25°C, unless otherwise specified) — AlternistorTriac (3 Quadrants)
Symbol
IGT
Test Conditions
VD = 12V RL = 60 Ω
Quadrant
I – II – III
QJxx12xH4
QJxx12H5
Unit
MAX.
MAX.
35
50
mA
I – II – III
VGT
1.3
1.3
V
VD = 12V RL = 60 Ω
VGD
IH
I – II – III
MIN.
0.2
40
0.2
50
V
VD = VDRM RL = 3.3 kΩ TJ = 150°C
IT = 100mA
MAX.
mA
VD = VDRM Gate Open TJ = 150°C
VD = 67% VDRM Gate Open TJ = 100°C
(di/dt)c = 6.5 A/ms TJ = 150°C
IG = 2 x IGT PW = 15μs IT = 17.0 A(pk)
450
600
700
1000
30
dv/dt
MIN.
V/μs
(dv/dt)c
tgt
MIN.
TYP.
2
V/μs
μs
7(TBD)
9 (TBD)
Static Characteristics
Symbol
Test Conditions
Value
1.60
10
Unit
V
VTM
ITM = 17.0A tp = 380 µs
MAX.
MAX.
TJ = 25°C
TJ = 150°C
μA
IDRM
IRRM
VD = VDRM / VRRM
3
mA
Thermal Resistances
Symbol
Parameter
Value
Unit
QJxx12RHy
1.2
QJxx12NHy
QJxx12LHy
QJxx12RHy
QJxx12LHy
Junction to case (AC)
°C/W
°C/W
Rθ(JC)
2.3
45
90
Junction to ambient (AC)
Rθ(J-A)
Note: xx = voltage/10, y = sensitivity
QJ8012xHx Series
©2019 Littelfuse, Inc
Specifications are subject to change without notice.
Revised: 07/18/19
Thyristors
12 Amp High Temperature Alternistor Triacs
Figure 2: Normalized DC GateTrigger Current for
All Quadrants vs. JunctionTemperature
Figure 1: Definition of Quadrants
ALL POLARITIES ARE REFERENCED TO MT1
4.0
MT2 POSITIVE
(Positive Half Cycle)
+
MT2
MT2
3.0
(-)
I
(+)
I
GATE
GT
GT
GATE
MT1
MT1
2.0
1.0
0.0
REF
MT2
REF
MT2
QII QI
QIII QIV
I
-
+ I
GT
GT
(-)
I
(+)
I
GATE
GT
GT
GATE
MT1
REF
MT1
REF
-65
-40
-15
10
35
60
85
110
-
Junction Temperature (TJ) - C
MT2 NEGATIVE
(Negative Half Cycle)
Note: Alternistors will not operate in QIV
Figure 3: Normalized DC Holding Current
vs. JunctionTemperature
Figure 4: Normalized DC GateTriggerVoltage for
All Quadrants vs. JunctionTemperature
2.0
1.5
1.0
0.5
0.0
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
-50
-25
0
25
50
75
100
125
150
-50
-25
0
25
50
75
100
125
150
Junction Temperature (TJ) -- (°C)
Junction Temperature (TJ) -- (°C)
Figure 5: Power Dissipation (Typical)
vs. RMS On-State Current
Figure 6: Maximum Allowable CaseTemperature
vs. On-State Current
14
160
CURRENT WAVEFORM: Sinusoidal
LOAD: Resistive or Inductive
QJxx12RHy
QJxx12NHy
12
CONDUCTION ANGLE: 360°
150
140
130
10
8
QJxx12LHy
120
6
110
100
90
4
2
80
0
0
2
4
6
8
10
12
14
0
2
4
6
8
10
12
14
RMS On-State Current [IT(RMS)] - (Amps)
RMS On-State Current [IT(RMS)] -- Amps
QJ8012xHx Series
©2019 Littelfuse, Inc
Specifications are subject to change without notice.
Revised: 07/18/19
Thyristors
12 Amp High Temperature Alternistor Triacs
Figure 7: Maximum Allowable AmbientTemperature
vs. On-State Current
Figure 8: On-State Current vs. On-StateVoltage
(Typical)
160
140
120
100
80
20
18
16
14
12
10
8
QJxx12RHy
QJxx12NHy
6
4
60
2
0
QJxx12LHy
40
0.7
0.8
0.9
1
1.1
1.2
1.3
1.4
1.5
1.6
20
0
0.2 0.4 0.6 0.8
1
1.2 1.4 1.6 1.8
2
2.2 2.4 2.6
Positive or Negative Instantaneous On-State Voltage
(VT) - Volts
RMS On-State Current [I T(RMS)] - (Amps)
Figure 9: Surge Peak On-State Current vs. Number of Cycles
1000
Supply Frequency: 60Hz Sinusoidal
Load: Resistive
RMS On-State Current [I T(RMS) : Maximum]
Rated Value at Specific Case Temperature
100
10
1
Notes:
1. Gate control may be lost during and immediately
following surge current interval.
2. Overload may not be repeated until junction
temperature has returned to steady-state
rated value.
1
10
100
1000
Surge Current Duration - Full Cycles
QJ8012xHx Series
©2019 Littelfuse, Inc
Specifications are subject to change without notice.
Revised: 07/18/19
Thyristors
12 Amp High Temperature Alternistor Triacs
Soldering Parameters
Reflow Condition
Pb – Free assembly
tP
TP
-Temperature Min (Ts(min)
)
150°C
Ramp-up
TL
TS(max)
Pre Heat -Temperature Max (Ts(max)
)
200°C
tL
-Time (min to max) (ts)
60 – 180 secs
Ramp-down
Preheat
Average ramp up rate (LiquidusTemp)
(TL) to peak
5°C/second max
TS(min)
tS
TS(max) toTL - Ramp-up Rate
5°C/second max
-Temperature (TL) (Liquidus) 217°C
25
Reflow
time to peak temperature
-Time (min to max) (ts)
60 – 150 seconds
260+0/-5 °C
Time
PeakTemperature (TP)
Time within 5°C of actual peak
Temperature (tp)
20 – 40 seconds
Ramp-down Rate
5°C/second max
8 minutes Max.
280°C
Time 25°C to peakTemperature (TP)
Do not exceed
Physical Specifications
Environmental Specifications
Test
AC Blocking
Specifications and Conditions
Terminal Finish
Body Material
100% MatteTin-plated
UL Recognized compound meeting
MIL-STD-750, M-1040, Cond A Applied
Peak AC voltage @ 125°C for 1008 hours
MIL-STD-750, M-1051,
100 cycles; -40°C to +150°C; 15-min
dwell time
flammability rating V-0
Temperature Cycling
Terminal Material
Copper Alloy
EIA / JEDEC, JESD22-A101
1008 hours; 320V - DC: 85°C; 85%
rel humidity
Temperature/
Humidity
MIL-STD-750, M-1031,
1008 hours; 150°C
Design Considerations
HighTemp Storage
Low-Temp Storage
Careful selection of the correct component for the
application’s operating parameters and environment will
go a long way toward extending the operating life of the
Thyristor. Good design practice should limit the maximum
continuous current through the main terminals to 75% of
the component rating. Other ways to ensure long life for
a power discrete semiconductor are proper heat sinking
and selection of voltage ratings for worst case conditions.
Overheating, overvoltage (including dv/dt), and surge
currents are the main killers of semiconductors. Correct
mounting, soldering, and forming of the leads also help
protect against component damage.
1008 hours; -40°C
Resistance to
Solder Heat
MIL-STD-750 Method 2031
Solderability
Lead Bend
ANSI/J-STD-002, category 3, Test A
MIL-STD-750, M-2036 Cond E
QJ8012xHx Series
©2019 Littelfuse, Inc
Specifications are subject to change without notice.
Revised: 07/18/19
Thyristors
12 Amp High Temperature Alternistor Triacs
Dimensions —TO-220AB (R-Package) — Non-Isolated MountingTab Common with Center Lead
TC MEASURING POINT
AREA (REF.) 0.17 IN2
Inches
Millimeters
Min
O
Dimension
8.13
.320
A
Ø
E
Min
Max
Max
10.67
2.92
6.35
15.75
3.73
3.30
14.61
0.89
5.21
2.67
1.91
P
MT2
A
B
C
D
E
0.380
0.105
0.230
0.590
0.142
0.110
0.540
0.025
0.195
0.095
0.060
0.085
0.018
0.178
0.045
0.038
0.420
0.115
0.250
0.620
0.147
0.130
0.575
0.035
0.205
0.105
0.075
0.095
0.024
0.188
0.060
0.048
9.65
2.67
5.84
14.99
3.61
2.79
13.72
0.64
4.95
2.41
1.52
B
C
13.36
.526
D
7.01
.276
NOTCH IN
GATE LEAD
TO ID.
NON-ISOLATED
TAB
F
F
G
H
J
R
G
L
H
K
K
N
L
J
M
MT1 MT2
GATE
M
N
O
P
2.16
0.46
4.52
1.14
2.41
0.61
4.78
1.52
Note: Maximum torque to
be applied to mounting tab
is 8 in-lbs. (0.904 Nm).
R
0.97
1.22
Dimensions —TO-220AB (L-Package) — Isolated MountingTab
TC MEASURING POINT
AREA (REF.) 0.17 IN2
Inches
Millimeters
Dimension
O
8.13
.320
Min
Max
Min
9.65
2.67
5.84
14.99
3.61
2.79
13.72
0.64
4.95
2.41
1.52
Max
10.67
2.92
6.35
15.75
3.73
3.30
14.61
0.89
5.21
2.67
1.91
A
Ø
E
P
A
B
C
D
E
0.380
0.105
0.230
0.590
0.142
0.110
0.540
0.025
0.195
0.095
0.060
0.085
0.018
0.178
0.045
0.038
0.420
0.115
0.250
0.620
0.147
0.130
0.575
0.035
0.205
0.105
0.075
0.095
0.024
0.188
0.060
0.048
B
C
13.36
.526
D
7.01
.276
F
F
G
H
J
R
G
L
H
K
K
N
L
Note: Maximum torque to
be applied to mounting tab
is 8 in-lbs. (0.904 Nm).
J
MT1 MT2
M
M
N
O
P
2.16
0.46
4.52
1.14
2.41
0.61
4.78
1.52
GATE
R
0.97
1.22
QJ8012xHx Series
©2019 Littelfuse, Inc
Specifications are subject to change without notice.
Revised: 07/18/19
Thyristors
12 Amp High Temperature Alternistor Triacs
Dimensions —TO-263AB (N-Package) — D2Pak Surface Mount
TC MEASURING POINT
AREA: 0.11 IN2
Inches
Millimeters
Min
C
B
V
Dimension
E
MT2
Min
Max
Max
9.40
10.67
4.78
0.89
1.52
8.41
.331
A
B
C
D
E
0.360
0.380
0.178
0.025
0.045
0.060
0.095
0.092
0.018
0.090
0.590
0.035
0.002
0.040
0.370
0.420
0.188
0.035
0.060
0.075
0.105
0.102
0.024
0.110
0.625
0.045
0.010
0.070
9.14
9.65
4.52
0.64
1.14
7.01
.276
A
S
W
U
J
K
GATE
MT1
8.13
.320
G
H
D
F
F
1.52
2.41
2.34
0.46
2.29
14.99
0.89
0.05
1.02
1.91
G
H
J
2.67
2.59
0.61
2.79
15.88
1.14
1168
.460
2.16
.085
7.01
.276
7.01
K
.276
16.89
.665
S
8.89
.350
1.40
.055
V
3.81
.150
U
W
0.25
1.78
2.03
.080
6.60
.260
Product Selector
Gate Sensitivity Quadrants
Part Number
Type
Package
I – II – III
35 mA
35 mA
35 mA
50 mA
50 mA
50 mA
QJxx12LH4
QJxx12RH4
QJxx12NH4
QJxx12LH5
QJxx12RH5
QJxx12NH5
AlternistorTriac
AlternistorTriac
AlternistorTriac
AlternistorTriac
AlternistorTriac
AlternistorTriac
TO-220L
TO-220R
TO-263 D²-PAK
TO-220L
TO-220R
TO-263 D²-PAK
Packing Options
Part Number
QJxx12RHyTP
QJxx12LHyTP
QJxx12NHyTP
QJxx12NHyRP
Marking
Weight
Packing Mode
Base Quantity
QJxx12RHy
QJxx12LHy
QJxx12NHy
QJxx12NHy
2.2 g
2.2 g
1.6 g
1.6 g
Tube Pack
Tube Pack
500 (50 per tube)
500 (50 per tube)
500 (50 per tube)
500
Tube Pack
Embossed Carrier
Note: xx = voltage/10; y = Sensitivity
QJ8012xHx Series
©2019 Littelfuse, Inc
Specifications are subject to change without notice.
Revised: 07/18/19
Thyristors
12 Amp High Temperature Alternistor Triacs
TO-263 Embossed Carrier Reel Pack (RP)
Meets all EIA-481-2 Standards
0.63
(16.0)
0.157
(4.0)
Gate
MT1
0.059
(1.5)
DIA
0.945
(24.0)
0.827
(21.0)
*
*
Cover tape
MT2
12.99
(330.0)
0.512 (13.0) Arbor
Hole Dia.
Dimensions
are in inches
(and millimeters).
1.01
(25.7)
Direction of Feed
Part Numbering System
QJ80 12 L H5 56
Part Marking System
TO-220 AB - (L and R Package)
TO-263 AB - (N Package)
LEAD FORM DIMENSIONS
DEVICE TYPE
xx: Lead Form Option
QJ: High TJ TRIAC or Alternistor
SENSITIVITY & TYPE
H4: 35mA (QI, II, III)
H5: 50mA (QI, II, III)
QJ8012RH5
VOLTAGE RATING
YM
80: 800V
®
PACKAGE TYPE
CURRENT RATING
12: 12A
L : TO-220 Isolated
R : TO-220 Non-Isolated
N : TO-263 (D2Pak)
Date Code Marking
Y:Year Code
M: Month Code
XXX: Lot Trace Code
Disclaimer Noꢀce - Informaꢀon furnished is believed to be accurate and reliable. However, users should independently evaluate the suitability of and
test each product selected for their own applicaꢀons. Liꢁelfuse products are not designed for, and may not be used in, all applicaꢀons.
Read complete Disclaimer Noꢀce at hꢁp://www.liꢁelfuse.com/disclaimer-electronics.
QJ8012xHx Series
©2019 Littelfuse, Inc
Specifications are subject to change without notice.
Revised: 07/18/19
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