R1211NS10C_技术文档

WESTCODE An IXYS Company

R1211NS10x to R1211NS12x

Date:- 26 Aug, 2010

Data Sheet Issue:- 2

WESTCODE

An IXYS Company

Distributed Gate Thyristor

Types R1211NS10x to R1211NS12x

Old part number R350CH10-12

Absolute Maximum Ratings

MAXIMUM

LIMITS

VOLTAGE RATINGS

UNITS

V_DRM

V_DSM

V_RRM

V_RSM

Repetitive peak off-state voltage, (note 1)

Non-repetitive peak off-state voltage, (note 1)

Repetitive peak reverse voltage, (note 1)

Non-repetitive peak reverse voltage, (note 1)

1000-1200

V

1000-1200

1100-1300

MAXIMUM

LIMITS

1211

OTHER RATINGS

UNITS

I_T(AV)

I_T(RMS)

I_T(d.c.)

I_TSM

I_TSM2

I²t

Mean on-state current, T_sink=55°C, (note 2)

Mean on-state current. T_sink=85°C, (note 2)

Mean on-state current. T_sink=85°C, (note 3)

Nominal RMS on-state current, T_sink=25°C, (note 2)

D.C. on-state current, T_sink=25°C, (note 4)

Peak non-repetitive surge t_p=10ms, V_RM=0.6V_RRM, (note 5)

Peak non-repetitive surge t_p=10ms, V_RM≤10V, (note 5)

I²t capacity for fusing t_p=10ms, V_RM=0.6V_RRM, (note 5)

I²t capacity for fusing t_p=10ms, V_RM≤10V, (note 5)

Maximum rate of rise of on-state current (repetitive), (Note 6)

Maximum rate of rise of on-state current (non-repetitive), (Note 6)

Peak reverse gate voltage

A

771

424

A

2497

A

1927

A

17.6

kA

A²s

A/µs

V

19.4

15.48×10⁵

18.82×10⁵

1000

I²t

di_T/dt

1500

V_RGM

P_G(AV)

P_GM

V_GD

5

Mean forward gate power

2

W

Peak forward gate power

30

W

Non-trigger gate voltage, (Note 7)

0.25

V

T_HS

Operating temperature range

-40 to +125

-40 to +150

°C

T_stg

Storage temperature range

Notes:-

1) De-rating factor of 0.13% per °C is applicable for T_jbelow 25°C.

2) Double side cooled, single phase; 50Hz, 180° half-sinewave.

3) Single side cooled, single phase; 50Hz, 180° half-sinewave.

4) Double side cooled.

5) Half-sinewave, 125°C T_jinitial.

6) V_D=67% V_DRM, I_FG=2A, t_r≤0.5µs, T_case=125°C.

Rating Report Types R1211NS10x to R1211NS12x Issue 2

Page 1 of 10

August, 2010

WESTCODE An IXYS Company

R1211NS10x to R1211NS12x

7) Rated V_DRM

.

Characteristics

PARAMETER

MIN.

TYP. MAX. TEST CONDITIONS (Note 1)

UNITS

V_TM

V₀

Maximum peak on-state voltage

Threshold voltage

-

2.18 I_TM=2000A

V

-

1.7

0.2

r_S

Slope resistance

-

mΩ

V/µs

mA

V

dv/dt Critical rate of rise of off-state voltage

200

-

V_D=80% V_DRM, linear ramp

I_DRM

I_RRM

V_GT

I_GT

I_H

Peak off-state current

Peak reverse current

Gate trigger voltage

Gate trigger current

-

150 Rated V_DRM

150 Rated V_RRM

-

3.0

T_j=25°C

-

300 T_j=25°C

V_D=10V, I_T=3A

mA

µC

A

Holding current

-

1000 T_j=25°C

-

Q_rr

Q_ra

I_rm

Recovered charge

230

100

80

2.4

Recovered charge, 50% Chord

Reverse recovery current

Reverse recovery time

130

I_TM=1000A, t_p=1000µs, di/dt=60A/µs,

V_r=50V

-

t_rr

µs

I_TM=1000A, t_p=1000µs, di/dt=60A/µs,

V_r=50V, V_dr=80%V_DRM, dV_dr/dt=20V/µs

I_TM=1000A, t_p=1000µs, di/dt=60A/µs,

V_r=50V, V_dr=80%V_DRM, dV_dr/dt=200V/µs

-

23

25

t_q

Turn-off time

µs

15

-

0.024 Double side cooled

K/W

kN

R_th(j-hs)Thermal resistance, junction to heatsink

-

0.048 Single side cooled

F

Mounting force

Weight

19

-

26

-

W_t

510

g

Notes:-

1) Unless otherwise indicated T_j=125°C.

2) The required t_q(specified with dV_dr/dt=200V/µs) is represented by an ‘x’ in the device part number. See ordering information for

details of t_qcodes.

Rating Report Types R1211NS10x to R1211NS12x Issue 2

Page 2 of 10

August, 2010

WESTCODE An IXYS Company

Notes on Ratings and Characteristics

1.0 Voltage Grade Table

R1211NS10x to R1211NS12x

V_DRMV_DSMV_RRM

V_RSM

V

1100

1300

V_DV_R

DC V

700

Voltage Grade

V

1000

1200

10

12

810

2.0 Extension of Voltage Grades

This report is applicable to other and higher voltage grades when supply has been agreed by

Sales/Production.

3.0 Extension of Turn-off Time

This Report is applicable to other t_q/re-applied dv/dt combinations when supply has been agreed by

Sales/Production.

4.0 Repetitive dv/dt

Higher dv/dt selections are available up to 1000V/µs on request.

5.0 De-rating Factor

A blocking voltage de-rating factor of 0.13%/°C is applicable to this device for T_jbelow 25^oC.

6.0 Rate of rise of on-state current

The maximum un-primed rate of rise of on-state current must not exceed 1500A/µs at any time during

turn-on on a non-repetitive basis. For repetitive performance, the on-state rate of rise of current must not

exceed 1000A/µs at any time during turn-on. Note that these values of rate of rise of current apply to the

total device current including that from any local snubber network.

7.0 Square wave ratings

These ratings are given for load component rate of rise of forward current of 100 and 500 A/µs.

8.0 Duty cycle lines

The 100% duty cycle is represented on all the ratings by a straight line. Other duties can be included as

parallel to the first.

9.0 Maximum Operating Frequency

The maximum operating frequency is set by the on-state duty, the time required for the thyristor to turn off

(t_q) and for the off-state voltage to reach full value (t_v), i.e.

1

f ^max=

tpulse +tq +tv

Rating Report Types R1211NS10x to R1211NS12x Issue 2

Page 3 of 10

August, 2010

WESTCODE An IXYS Company

R1211NS10x to R1211NS12x

10.0 On-State Energy per Pulse Characteristics

These curves enable rapid estimation of device dissipation to be obtained for conditions not covered by

the frequency ratings.

Let E_pbe the Energy per pulse for a given current and pulse width, in joules

Let R_th(J-Hs)be the steady-state d.c. thermal resistance (junction to sink)

and T_SINKbe the heat sink temperature.

Then the average dissipation will be:

W_AV= E_P⋅ f and T_{SINK (max.)}=125 −

(

W_AV⋅ R_th

)

(

J −Hs

)

11.0 Reverse recovery ratings

(i) Q_rais based on 50% I_rmchord as shown in Fig. 1 below.

Fig. 1

(ii) Q_rris based on a 150µs integration time.

150µs

Q_rr= i_rr.dt

i.e.

∫

0

t1

K Factor =

(iii)

t2

12.0 Reverse Recovery Loss

12.1 Determination by Measurement

From waveforms of recovery current obtained from a high frequency shunt (see Note 1, Page 5) and

reverse voltage present during recovery, an instantaneous reverse recovery loss waveform must be

constructed. Let the area under this waveform be E joules per pulse. A new heat sink temperature can

then be evaluated from:

T_{SINK (new)}= T_{SINK (original )}− E ⋅

(

k + f ⋅ R_th

)

(

J −Hs

)

where k = 0.227 (°C/W)/s

E = Area under reverse loss waveform per pulse in joules (W.s.)

f = rated frequency Hz at the original heat sink temperature.

R

_th(J-Hs)= d.c. thermal resistance (°C/W).

Rating Report Types R1211NS10x to R1211NS12x Issue 2

Page 4 of 10

August, 2010

WESTCODE An IXYS Company

R1211NS10x to R1211NS12x

The total dissipation is now given by:

W_(TOT)= W_(original)+ E ⋅ f

12.2 Determination without Measurement

In circumstances where it is not possible to measure voltage and current conditions, or for design

purposes, the additional losses E in joules may be estimated as follows.

Let E be the value of energy per reverse cycle in joules (curves in Figure 9).

Let f be the operating frequency in Hz

T_SINK

= T_SINK

−

)

(

E ⋅ R_th⋅ f

)

(

new

)

(

original

Where T_{SINK (new)}is the required maximum heat sink temperature and

_{SINK (original)}is the heat sink temperature given with the frequency ratings.

T

A suitable R-C snubber network is connected across the thyristor to restrict the transient reverse voltage

to a peak value (V_rm) of 67% of the maximum grade. If a different grade is being used or V_rmis other than

67% of Grade, the reverse loss may be approximated by a pro rata adjustment of the maximum value

obtained from the curves.

NOTE 1- Reverse Recovery Loss by Measurement

This thyristor has a low reverse recovered charge and peak reverse recovery current. When measuring

the charge care must be taken to ensure that:

(a) a.c. coupled devices such as current transformers are not affected by prior passage of high

amplitude forward current.

(b) A suitable, polarised, clipping circuit must be connected to the input of the measuring oscilloscope

to avoid overloading the internal amplifiers by the relatively high amplitude forward current signal

(c) Measurement of reverse recovery waveform should be carried out with an appropriate critically

damped snubber, connected across diode anode to cathode. The formula used for the calculation

of this snubber is shown below:

V

R²= 4⋅

r

di

C_s⋅

dt

Where: V_r= Commutating source voltage

C_S= Snubber capacitance

R

= Snubber resistance

13.0 Gate Drive

The recommended pulse gate drive is 30V, 15Ω with a short-circuit current rise time of not more than

0.5µs. This gate drive must be applied when using the full di/dt capability of the device.

The duration of pulse may need to be configured with respect to the application but should be no shorter

than 20µs, otherwise an increase in pulse current could be needed to supply the resulting increase in

charge to trigger.

Rating Report Types R1211NS10x to R1211NS12x Issue 2

Page 5 of 10

August, 2010

WESTCODE An IXYS Company

R1211NS10x to R1211NS12x

14.0 Computer Modelling Parameters

14.1 Calculating V_Tusing ABCD Coefficients

The on-state characteristic I_Tvs V_T, on page 7 is represented in two ways;

(i)

the well established V_oand r_stangent used for rating purposes and

(ii)

a set of constants A, B, C, D, forming the coefficients of the representative equation for V_Tin

terms of I_Tgiven below:

V_T= A+ B ⋅ln

(

I_T+ C ⋅ I_T+ D ⋅ I_T

)

The constants, derived by curve fitting software, are given in this report for hot and cold characteristics

where possible. The resulting values for V_Tagree with the true device characteristic over a current range,

which is limited to that plotted.

125°C Coefficients

A

B

C

D

1.686768

7.60386 x 10^-3

2.3118 x 10^-4

-6.4236 x 10^-4

14.2 D.C. Thermal Impedance Calculation

−t

τ _p

p=n

⎛

⎞

⎟

⎜

p

r = r ⋅ 1− e

∑

t

⎜

⎟

⎠

p=1

⎝

Where p = 1 to n, n is the number of terms in the series.

t = Duration of heating pulse in seconds.

r_t= Thermal resistance at time t.

r_p= Amplitude of p_thterm.

= Time Constant of r_thterm.

τ_p

D.C. Double Side Cooled

3

Term

r_p

1

2

4

5

0.01249139

0.8840810

6.316833×10^-3

1.850855×10^-3

1.922045×10^-3

6.742908×10^-3

6.135330×10^-4

1.326292×10^-3

0.1215195

0.03400152

τ_p

D.C. Single Side Cooled

3

Term

r_p

1

2

4

5

6

4.863568×10^-

6.818034×10^-2.183558×10^-

0.02919832

6.298105

3.744798×10^-3

1.848294×10^-3

3.379476×10^-3

3

3.286174

0.5359179

0.1186897

0.02404574

τ_p

Rating Report Types R1211NS10x to R1211NS12x Issue 2

Page 6 of 10

August, 2010

WESTCODE An IXYS Company

R1211NS10x to R1211NS12x

Curves

Figure 1 - On-state characteristics of Limit device

Figure 2 - Transient thermal impedance

10000

0.1

SSC 0.048K/W

DSC 0.024K/W

0.01

T_j= 125°C

1000

0.001

0.0001

R1211NS10x-12x

Issue 2

R1211NS10x-12x

Issue 2

100

0.00001

0.0001

0

0.5

1

1.5

2

2.5

3

3.5

0.001

0.01

0.1

1

10

100

Instantaneous on-state voltage - V_T(V)

Time (s)

Figure 3 - Gate characteristics - Trigger limits

Figure 4 - Gate characteristics - Power curves

16

6

R1211NS10x-12x

Issue 2

R1211NS10x-12x

Issue 2

T_j=25°C

14

T_j=25°C

5

12

Max V_Gdc

4

3

2

1

10

8

I_GT, V_GT

6

P_GMax 30W dc

4

P_G2W dc

Min V_Gdc

2

I_GD, V_GD

Min V_Gdc

0

0.2

0.4

0.6

0.8

1

0

2

4

6

8

10

Rating Report Types R1211NS10x to R1211NS12x Issue 2

Page 7 of 10

August, 2010

WESTCODE An IXYS Company

R1211NS10x to R1211NS12x

Figure 5 - Total recovered charge, Q_rr

Figure 6 - Recovered charge, Q_ra(50% chord)

1000

2000A

1500A

1000A

500A

2000A

1500A

1000A

500A

100

T_j= 125°C

R1211NS10x-12x

Issue 2

10

100

1000

10

100

Commutation rate - di/dt (A/µs)

1000

Commutation rate - di/dt (A/µs)

Figure 7 - Peak reverse recovery current, I_rm

Figure 8 - Maximum recovery time, t_rr(50% chord)

10

1000

2000A

1500A

1000A

500A

100

2000A

1500A

1000A

500A

T_j= 125°C

R1211NS10x-12x

Issue 2

1

10

100

1000

10

100

1000

Commutation rate - di/dt (A/µs)

Rating Report Types R1211NS10x to R1211NS12x Issue 2

Page 8 of 10

August, 2010

WESTCODE An IXYS Company

R1211NS10x to R1211NS12x

Figure 9 - Reverse recovery energy per pulse

Figure 10 - Sine wave energy per pulse

1.00E+02

1.00E+01

1.00E+00

1.00E-01

1.00E-02

1000

R1211NS10x-12x

Issue 2

T_j=125°C

2000A

1000A

100

10

1

500A

200A

4kA

3k

2kA

1kA

Snubber

0.25µF, 5Ω

500A

T_j= 125°C

_rm=67%V_rrm

V

R1211NS10x-12x

Issue 2

1

10

100

1000

1.00E-05

1.00E-04

1.00E-03

1.00E-02

Commutation rate - di/dt (A/µs)

Pulse width (s)

Figure 11 - Sine wave frequency ratings

Figure 12 - Sine wave frequency ratings

1.00E+05

500A

R1211NS10x-12x

Issue 2

T_Hs=55°C

500A

100% Duty Cycle

1kA

1.00E+04

1.00E+03

1.00E+02

1.00E+01

1.00E+00

1kA

2kA

1.00E+04

1.00E+03

1.00E+02

1.00E+01

2kA

3kA

4kA

3kA

4kA

T_Hs=85°C

R1211NS10x-12x

Issue 2

1.00E-05

1.00E-04

1.00E-03

1.00E-02

1.00E-05

1.00E-04

1.00E-03

1.00E-02

Pulse width (s)

Pulse Width (s)

Rating Report Types R1211NS10x to R1211NS12x Issue 2

Page 9 of 10

August, 2010

WESTCODE An IXYS Company

R1211NS10x to R1211NS12x

Figure 13 - Square wave frequency ratings

Figure 14 - Square wave frequency ratings

1.00E+05

1.00E+04

1.00E+03

1.00E+02

1.00E+01

1.00E+00

500A

1kA

100% Duty Cycle

1kA

1.00E+04

2kA

3kA

2kA

3kA

1.00E+03

4kA

1.00E+02

1.00E+01

T_Hs=55°C

di/dt=500A/µs

R1211NS10x-12x

Issue 2

di/dt=100A/µs

R1211NS10x-12x

Issue 2

1.00E+00

1.00E-05

1.00E-04

1.00E-03

1.00E-02

1.00E-05

1.00E-04

1.00E-03

1.00E-02

Pulse width (s)

Figure 15 - Square wave frequency ratings

Figure 16 - Square wave frequency ratings

1.00E+05

100% Duty Cycle

500A

1.00E+04

100% Duty Cycle

1.00E+04

1kA

2kA

1.00E+03

2kA

3kA

4kA

1.00E+03

3kA

4kA

1.00E+02

1.00E+01

1.00E+02

T_Hs=85°C

di/dt=100A/µs

di/dt=500A/µs

R1211NS10x-12x

Issue 2

R1211NS10x-12x

Issue 2

1.00E+01

1.00E+00

1.00E-05

1.00E-04

1.00E-03

1.00E-02

1.00E-05

1.00E-04

1.00E-03

1.00E-02

Pulse width (s)

Rating Report Types R1211NS10x to R1211NS12x Issue 2

Page 10 of 10

August, 2010

WESTCODE An IXYS Company

R1211NS10x to R1211NS12x

Figure 17 - Square wave energy per pulse

Figure 18 - Square wave energy per pulse

1.00E+03

1.00E+02

1.00E+01

1.00E+00

1.00E-01

1.00E-02

1.00E+03

R1211NS10x-12x

Issue 2

R1211NS10x-12x

Issue 2

di/dt=500A/µs

T_j=125°C

di/dt=100A/µs

T_j=125°C

1.00E+02

4kA

3kA

2kA

1.00E+01

4kA

3kA

1.00E+00

2kA

1kA

500A

1.00E-01

500A

1.00E-02

1.00E-05

1.00E-04

1.00E-03

1.00E-02

1.00E-05

1.00E-04

1.00E-03

1.00E-02

Pulse width (s)

Figure 19 - Maximum surge and I²t Ratings

Gate may temporarily lose control of conduction angle

100000

10000

1000

1.00E+08

1.00E+07

1.00E+06

1.00E+05

I²t: V_RRM≤10V

I²t: 60% V_RRM

I_TSM: V_RRM≤10V

I_TSM: 60% V_RRM

T_j(initial) = 125°C

R1211NS10x-12x

Issue 2

1

3

5

10

1

5

10

50 100

Duration of surge (ms)

Duration of surge (cycles @ 50Hz)

Rating Report Types R1211NS10x to R1211NS12x Issue 2

Page 11 of 10

August, 2010

WESTCODE An IXYS Company

R1211NS10x to R1211NS12x

Outline Drawing & Ordering Information

ORDERING INFORMATION

(Please quote 10 digit code as below)

R1211

NS

Voltage code

V_RRM/100

10-12

Fixed

Type Code

Fixed

Outline Code

t_qcode C=15µs, D=20µs,

E=25µs

Order code: R1211NS10D – 1000V V_DRM, 20µs t_q27.7mm clamp height capsule.

IXYS Semiconductor GmbH

Edisonstraße 15

D-68623 Lampertheim

Westcode Semiconductors Ltd

Langley Park Way, Langley Park,

Chippenham, Wiltshire, SN15 1GE.

Tel: +44 (0)1249 444524

Fax: +44 (0)1249 659448

E-mail:

WSL sales@westcode com

Westcode Semiconductors Inc

Tel: +49 6206 503-0

WESTCODE

Fax: +49 6206 503-627

An IXYS Company

E-mail:

marcom@ixys de

IXYS Corporation

1590 Buckeye Drive

2500 Mira Mar Avenue

Long Beach CA 90815 USA

Tel: +1 (562) 296 6584

www.westcode.com

Milpitas CA 95035 7418 USA

Tel: +1 (408) 547 9000

Fax: +1 (408) 496 0670

E-mail: sales@ixys.net

Fax: +1 (562) 296 6585

E-mail: WSI.sales@westcode.com

www.ixys.net

The information contained herein is confidential and is protected by Copyright. The information may not be used or disclosed

except with the written permission of and in the manner permitted by the proprietors Westcode Semiconductors Ltd.

In the interest of product improvement, Westcode reserves the right to change specifications at any time without prior notice.

Devices with a suffix code (2-letter, 3-letter or letter/digit/letter combination) added to their generic code are not necessarily

subject to the conditions and limits contained in this report.

Rating Report Types R1211NS10x to R1211NS12x Issue 2

Page 12 of 10

August, 2010


型号：	R1211NS10C
厂家：	LITTELFUSE
描述：	Silicon Controlled Rectifier, 1927000mA I(T), 1000V V(DRM), 栅栅极
文件：	总12页 (文件大小：545K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

R1211NS10C [LITTELFUSE]

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