R3047TC26N [LITTELFUSE]

Silicon Controlled Rectifier, 6094 A, 2600 V, SCR, 101A325, 3 PIN;


型号：	R3047TC26N
厂家：	LITTELFUSE
描述：	Silicon Controlled Rectifier, 6094 A, 2600 V, SCR, 101A325, 3 PIN
文件：	总12页 (文件大小：390K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

Date:- 25 May, 2001

Data Sheet Issue:- 2

WESTCODE

Provisional Data

Distributed Gate Thyristor

Types R3047TC24x to R3047TC28x

Absolute Maximum Ratings

MAXIMUM

LIMITS

VOLTAGE RATINGS

UNITS

(Note 1)

V_DRM

V_DSM

V_RRM

V_RSM

Repetitive peak off-state voltage

Non-repetitive peak off-state voltage

Repetitive peak reverse voltage

Non-repetitive peak reverse voltage

2400-2800

2500-2900

MAXIMUM

LIMITS

3047

OTHER RATINGS

UNITS

I_T(AV)

I_T(RMS)

I_T(d.c.)

I_TSM

I_TSM2

I²t

Mean on-state current, T_sink=55°C (note 2)

Mean on-state current. T_sink=85°C (note 2)

Mean on-state current. T_sink=85°C (note 3)

Nominal RMS on-state current, T_sink=25°C (note 2)

D.C. on-state current, T_sink=25°C (note 4)

2043

1196

6094

5097

Peak non-repetitive surge t_p=10ms, V_RM=0.6V_RRM(note 5)

A²s

A/µs

≤

Peak non-repetitive surge t_p=10ms, V_RM10V (note 5)

I²t capacity for fusing t_p=10ms, V_RM=0.6V_RRM(note 5)

12.5×10⁶

15.1×10⁶

500

I²t

≤

I²t capacity for fusing t_p=10ms, V_RM10V (note 5)

Maximum rate of rise of on-state current (repetitive) (Note 6)

Maximum rate of rise of on-state current (non-repetitive) (Note 6)

Peak reverse gate voltage

Mean forward gate power

Peak forward gate power

di_T/dt

1000

0.25

V_RGM

P_G(AV)

P_GM

V_GD

Non-trigger gate voltage (Note 7)

T_HS

T_stg

Operating temperature range

Storage temperature range

-40 to +125

-40 to +150

°C

Notes:-

1) De-rating factor of 0.13% per °C is applicable for T_jbelow 25°C.

2) Double side cooled, single phase; 50Hz, 180° half-sinewave.

3) Single side cooled, single phase; 50Hz, 180° half-sinewave.

4) Double side cooled.

5) Half-sinewave, 125°C T_jinitial.

≤

6) V_D=67% V_DRM, I_FG=2A, t_r0.5µs, T_case=125°C.

7) Rated V_DRM

Provisional Data Sheet. Types R3047TC24x-28x Issue 2

Page 1 of 12

May, 2001

WESTCODE ^{Positive development in power electronics}

R3047TC24x-28x

Characteristics

PARAMETER

MIN.

TYP. MAX. TEST CONDITIONS

UNITS

(Note 1)

V_TM

V₀

Maximum peak on-state voltage

Threshold voltage

2.45 I_TM=5000A

1.581

r_S

Slope resistance

0.171

Ω

dv/dt Critical rate of rise of off-state voltage

200

V_D=80% V_DRM, linear ramp

V/ s

I_DRM

I_RRM

V_GT

I_GT

I_H

Peak off-state current

Peak reverse current

Gate trigger voltage

200 Rated V_DRM

200 Rated V_RRM

3.0

T_j=25°C

600

V_D=10V, I_T=3A

Gate trigger current

Holding current

1000 T_j=25°C

t_gd

Gate-controlled turn-on delay time

Turn-on time

0.7

1.5

1900

950

260

7.3

1.5

V_D=67% V_DRM, I_T=2000A, di/dt=60A/µs,

µs

_FG=2A, t_r=0.5µs, T_j=25°C

t_gt

3.0

Q_rr

Q_ra

I_rm

Recovered charge

µC

Recovered charge, 50% Chord

Reverse recovery current

Reverse recovery time, 50% chord

1180

_TM=4000A, t_p=2000µs, di/dt=60A/µs,

V_r=100V

t_rr

µs

_TM=4000A, t_p=2000µs, di/dt=60A/µs,

V_r=100V, V_dr=67%V_DRM, dV_dr/dt=20V/µs

I_TM=4000A, t_p=2000µs, di/dt=60A/µs,

V_r=100V, V_dr=67%V_DRM, dV_dr/dt=200V/µs

t_q

Turn-off time

µs

100

0.008 Double side cooled

K/W

R_th(j-hs)Thermal resistance, junction to heatsink

0.016 Single side cooled

Mounting force

Weight

W_t

1.23

Notes:-

1) Unless otherwise indicated T_j=125°C.

2) The required t_q(specified with dV_dr/dt=200V/µs) is represented by an ‘x’ in the device part number. See ordering information

for details of t_qcodes.

Provisional Data Sheet. Types R3047TC24x-28x Issue 2

Page 2 of 12

May, 2001

WESTCODE ^{Positive development in power electronics}

Notes on Ratings and Characteristics

1.0 Voltage Grade Table

R3047TC24x-28x

_DRMV_DSMV_RRM

V_RSM

V_DV_R

DC V

1450

1550

1650

Voltage Grade

2400

2600

2800

2400

2600

2800

2500

2700

2900

2.0 Extension of Voltage Grades

This report is applicable to other and higher voltage grades when supply has been agreed by

Sales/Production.

3.0 Extension of Turn-off Time

This Report is applicable to other t_q/re-applied dv/dt combinations when supply has been agreed by

Sales/Production.

4.0 Repetitive dv/dt

Higher dv/dt selections are available up to 1000V/µs on request.

5.0 De-rating Factor

A blocking voltage de-rating factor of 0.13%/°C is applicable to this device for T_jbelow 25°C.

6.0 Rate of rise of on-state current

The maximum un-primed rate of rise of on-state current must not exceed 1000A/µs at any time during

turn-on on a non-repetitive basis. For repetitive performance, the on-state rate of rise of current must not

exceed 500A/µs at any time during turn-on. Note that these values of rate of rise of current apply to the

total device current including that from any local snubber network.

7.0 Square wave ratings

These ratings are given for load component rate of rise of forward current of 100 and 500 A/µs.

8.0 Duty cycle lines

The 100% duty cycle is represented on all the ratings by a straight line. Other duties can be included as

parallel to the first.

9.0 Maximum Operating Frequency

The maximum operating frequency is set by the on-state duty, the time required for the thyristor to turn off

(t_q) and for the off-state voltage to reach full value (t_v), i.e.

^max=

t^pulse+t^q+t^v

Provisional Data Sheet. Types R3047TC24x-28x Issue 2

Page 3 of 12

May, 2001

WESTCODE ^{Positive development in power electronics}

R3047TC24x-28x

10.0 On-State Energy per Pulse Characteristics

These curves enable rapid estimation of device dissipation to be obtained for conditions not covered by

the frequency ratings.

Let E_pbe the Energy per pulse for a given current and pulse width, in joules

Let R_th(J-Hs)be the steady-state d.c. thermal resistance (junction to sink)

and T_SINKbe the heat sink temperature.

Then the average dissipation will be:

= ⋅

−

(

⋅

)

W_AVE_Pf and T_{SINK (max.)}125 W_AVR_th

(

J −Hs

)

11.0 Reverse recovery ratings

(i) Q_rais based on 50% I_rmchord as shown in Fig. 1 below.

Fig. 1

(ii) Q_rris based on a 150 s integration time.

150µs

Q_rr= i_rr.dt

∫

i.e.

K Factor =

(iii)

12.0 Reverse Recovery Loss

12.1 Determination by Measurement

From waveforms of recovery current obtained from a high frequency shunt (see Note 1, Page 5) and

reverse voltage present during recovery, an instantaneous reverse recovery loss waveform must be

constructed. Let the area under this waveform be E joules per pulse. A new heat sink temperature can

then be evaluated from:

− ⋅

(

+ ⋅

)

T_{SINK (new)}T_{SINK (original)}E k f R_th

(

J −Hs

)

where k = 0.227 (°C/W)/s

E = Area under reverse loss waveform per pulse in joules (W.s.)

f = rated frequency Hz at the original heat sink temperature.

R_th(J-Hs)= d.c. thermal resistance (°C/W).

Provisional Data Sheet. Types R3047TC24x-28x Issue 2

Page 4 of 12

May, 2001

WESTCODE ^{Positive development in power electronics}

R3047TC24x-28x

The total dissipation is now given by:

+ ⋅

E f

W_(TOT)W_(original)

12.2 Determination without Measurement

In circumstances where it is not possible to measure voltage and current conditions, or for design

purposes, the additional losses E in joules may be estimated as follows.

Let E be the value of energy per reverse cycle in joules (curves in Figure 9).

Let f be the operating frequency in Hz

T_SINK

−

( )

original

(

E R_thf

⋅ ⋅

)

(

new

)

Where T_{SINK (new)}is the required maximum heat sink temperature and

T_{SINK (original)}is the heat sink temperature given with the frequency ratings.

A suitable R-C snubber network is connected across the thyristor to restrict the transient reverse voltage

to a peak value (V_rm) of 67% of the maximum grade. If a different grade is being used or V_rmis other than

67% of Grade, the reverse loss may be approximated by a pro rata adjustment of the maximum value

obtained from the curves.

NOTE 1

- Reverse Recovery Loss by Measurement

This thyristor has a low reverse recovered charge and peak reverse recovery current. When measuring

the charge care must be taken to ensure that:

(a) a.c. coupled devices such as current transformers are not affected by prior passage of high

amplitude forward current.

(b) A suitable, polarised, clipping circuit must be connected to the input of the measuring oscilloscope

to avoid overloading the internal amplifiers by the relatively high amplitude forward current signal

damped snubber, connected across diode anode to cathode. The formula used for the calculation

of this snubber is shown below:

V_r

R²= 4⋅

C_S⋅ ^di

Where: V_r= Commutating source voltage

C_S= Snubber capacitance

= Snubber resistance

13.0 Gate Drive

Ω

The recommended pulse gate drive is 30V, 15 with a short-circuit current rise time of not more than

0.5µs. This gate drive must be applied when using the full di/dt capability of the device.

The duration of pulse may need to be configured with respect to the application but should be no shorter

than 20µs, otherwise an increase in pulse current could be needed to supply the resulting increase in

charge to trigger.

Provisional Data Sheet. Types R3047TC24x-28x Issue 2

Page 5 of 12

May, 2001

WESTCODE ^{Positive development in power electronics}

R3047TC24x-28x

14.0 Computer Modelling Parameters

14.1 Calculating V_Tusing ABCD Coefficients

The on-state characteristic I_Tvs V_T, on page 7 is represented in two ways;

(i)

the well established V₀and r_stangent used for rating purposes and

(ii)

a set of constants A, B, C, D, forming the coefficients of the representative equation for V_Tin

terms of I_Tgiven below:

= + ⋅ ( )+ ⋅ + ⋅

V_TA B ln I_TC I_TD I_T

The constants, derived by curve fitting software, are given in this report for hot and cold characteristics

where possible. The resulting values for V_Tagree with the true device characteristic over a current range,

which is limited to that plotted.

25°C Coefficients

125°C Coefficients

1.262553

0.140687

2.08186705

-0.1296326

1.41627×10^-4

-9.591208×10^-3

1.055787×10^-4

0.01335506

14.2 D.C. Thermal Impedance Calculation

−

τ _p

p n









r = r ⋅ 1− e

∑









p 1

Where p = 1 to n, n is the number of terms in the series.

t = Duration of heating pulse in seconds.

r_t= Thermal resistance at time t.

r_p= Amplitude of p_thterm.

τ_p

= Time Constant of r_thterm.

D.C. Double Side Cooled

Term

r_p

τ_p

5.228149×10^-3

0.9862513

3.076205×10^-3

0.2593041

1.977511×10^-3

0.03447094

D.C. Single Side Cooled

Term

r_p

τ_p

0.01186497

7.361938

3.872272×10^-3

3.457033×10^-3

0.2019036

1.694157×10^-3

1.651253

0.02934724

Provisional Data Sheet. Types R3047TC24x-28x Issue 2

Page 6 of 12

May, 2001

WESTCODE ^{Positive development in power electronics}

R3047TC24x-28x

Curves

Figure 1 - On-state characteristics of Limit device

Figure 2 - Transient thermal impedance

10000

0.1

SSC 0.016K/W

DSC 0.008K/W

0.01

T_j= 125°C

T_j= 25°C

1000

0.001

0.0001

0.00001

R3047TC24x-28x

AD Issue 2

R3047TC24x-28x

AD Issue 2

100

1.5

2.5

3.5

0.0001

0.001

0.01

0.1

Time (s)

100

Instantaneous on-state voltage - V_T(V)

Figure 3 - Gate characteristics - Trigger limits

Figure 4 - Gate characteristics - Power curves

R3047TC24x-28x

AD Issue 2

T_j=25°C

Max V_Gdc

I_GT, V_GT

P_GMax 30W dc

Min V_Gdc

P_G4W dc

Min V_Gdc

I_GD, V_GD

0.25

0.5

0.75

1.25

1.5

Gate Trigger Current - I_GT(A)

Provisional Data Sheet. Types R3047TC24x-28x Issue 2

Page 7 of 12

May, 2001

WESTCODE ^{Positive development in power electronics}

R3047TC24x-28x

Figure 5 - Total recovered charge, Q_rr

Figure 6 - Recovered charge, Q_ra(50% chord)

10000

1000

100

10000

4000A

2000A

4000A

2000A

1000A

500A

1000

T_j= 125°C

R3047TC24x-28x

AD Issue 2

T_j= 125°C

R3047TC24x-28x

AD Issue 2

100

Commutation rate - di/dt (A/µs)

1000

100

Commutation rate - di/dt (A/µs)

1000

Figure 7 - Peak reverse recovery current, I_rm

Figure 8 - Maximum recovery time, t_rr(50% chord)

10000

4000A

2000A

4000A

2000A

1000A

500A

1000A

1000

100

500A

T_j= 125°C

R3047TC24x-28x

AD Issue 2

R3047TC24x-28x

AD Issue 2

100

1000

100

Commutation rate - di/dt (A/µs)

1000

Commutation rate - di/dt (A/µs)

Provisional Data Sheet. Types R3047TC24x-28x Issue 2

Page 8 of 12

May, 2001

WESTCODE ^{Positive development in power electronics}

R3047TC24x-28x

Figure 9 – Reverse Recovery Energy

Figure 10 - Sine wave energy per pulse

10000

1.00E+03

1.00E+02

1.00E+01

1.00E+00

1.00E-01

1.00E-02

R3047TC24x-28x

AD Issue 2

T_j=125°C

AD Issue 2

T_j= 125°C

V_r=400V

Measured

without

4000A

2000A

snubber

1000A

500A

8000A

6000A

1000

4000A

2000A

1000A

500A

100

1000

1.00E-05

1.00E-04

1.00E-03

1.00E-02

di/dt (A/µs)

Pulse width (s)

Figure 11 - Sine wave frequency ratings

Figure 12 - Sine wave frequency ratings

1.00E+05

R3047TC24x-28x

AD Issue 2

T_Hs=85°C

R3047TC24x-28x

AD Issue 2

1000A

T_Hs=55°C

1000A

2000A

100% Duty Cycle

2000A

1.00E+04

1.00E+03

1.00E+02

1.00E+01

1.00E+04

1.00E+03

1.00E+02

1.00E+01

4000A

6000A

8000A

6000A

8000A

1.00E-05

1.00E-04

1.00E-03

1.00E-02

1.00E-05

1.00E-04

1.00E-03

1.00E-02

Pulse width (s)

Pulse Width (s)

Provisional Data Sheet. Types R3047TC24x-28x Issue 2

Page 9 of 12

May, 2001

WESTCODE ^{Positive development in power electronics}

R3047TC24x-28x

Figure 13 - Square wave frequency ratings

Figure 14 - Square wave frequency ratings

1.00E+05

1.00E+04

1.00E+03

1.00E+02

1.00E+01

R3047TC24x-28x

AD Issue 2

di/dt=500A/µs

100% Duty Cycle

T_Hs=55°C

1000A

2000A

100% Duty Cycle

1.00E+04

2000A

4000A

6000A

8000A

1.00E+03

1.00E+02

1.00E+01

8000A

T_Hs=55°C

di/dt=100A/µs

R3047TC24x-28x

AD Issue 2

1.00E-05

1.00E-04

1.00E-03

1.00E-02

1.00E-05

1.00E-04

1.00E-03

1.00E-02

Pulse width (s)

Figure 15 - Square wave frequency ratings

Figure 16 - Square wave frequency ratings

1.00E+05

500A

100% Duty Cycle

1000A

100% Duty Cycle

1000A

1.00E+04

2000A

1.00E+04

2000A

4000A

1.00E+03

6000A

1.00E+03

6000A

8000A

1.00E+02

T_Hs=85°C

di/dt=500A/µs

di/dt=100A/µs

R3047TC24x-28x

AD Issue 2

1.00E+01

1.00E-05

1.00E-04

1.00E-03

1.00E-02

1.00E-05

1.00E-04

1.00E-03

1.00E-02

Pulse width (s)

Provisional Data Sheet. Types R3047TC24x-28x Issue 2

Page 10 of 12

May, 2001

WESTCODE ^{Positive development in power electronics}

R3047TC24x-28x

Figure 17 - Square wave energy per pulse

Figure 18 - Square wave energy per pulse

1.00E+03

1.00E+02

1.00E+01

1.00E+00

1.00E-01

1.00E-02

R3047TC24x-28x

AD Issue 2

di/dt=500A/µs

T_j=125°C

AD Issue 2

di/dt=100A/µs

T_j=125°C

1.00E+02

8000A

6000A

4000A

1.00E+01

1.00E+00

1.00E-01

1.00E-02

8000A

6000A

4000A

2000A

1000A

500A

2000A

1000A

500A

1.00E-05

1.00E-04

1.00E-03

1.00E-02

1.00E-05

1.00E-04

1.00E-03

1.00E-02

Pulse width (s)

Figure 19 - Maximum surge and I²t Ratings

Gate may temporarily lose control of conduction angle

1000000

100000

10000

1.00E+09

1.00E+08

1.00E+07

1.00E+06

R3047TC24x-28x

AD Issue 2

T_j(initial) = 125°C

I²t: V_RRM10V

≤

I²t: 60% V_RRM

≤

I_TSM: V_RRM10V

I_TSM: 60% V_RRM

1000

50 100

Duration of surge (ms)

Duration of surge (cycles @ 50Hz)

Provisional Data Sheet. Types R3047TC24x-28x Issue 2

Page 11 of 12

May, 2001

WESTCODE ^{Positive development in power electronics}

R3047TC24x-28x

Outline Drawing & Ordering Information

ORDERING INFORMATION

(Please quote 10 digit code as below)

R3047

♦ ♦

♦

Fixed

Off-state Voltage Code

t_qCode

Type Code

Outline Code

V_DRM/100

40-45

K=60µs, L=65µs,

M=70µs, N=100µs

Typical order code: R3047TC26 – 2600V V_DRM, V_RRM, 300µs t_q, 27.1mm clamp height capsule.

UK: Westcode Semiconductors Ltd.

P.O. Box 57, Chippenham, Wiltshire, England. SN15 1JL.

Tel: +44 (0) 1249 444524 Fax: +44 (0) 1249 659448

E-Mail: WSL.sales@westcode.com

WESTCODE

USA: Westcode Semiconductors Inc.

3270 Cherry Avenue, Long Beach, California 90807

Tel: 562 595 6971 Fax: 562 595 8182

Internet: http://www.westcode.com

E-Mail: WSI.sales@westcode.com

The information contained herein is confidential and is protected by Copyright. The information may not be used or disclosed

except with the written permission of and in the manner permitted by the proprietors Westcode Semiconductors Ltd.

In the interest of product improvement, Westcode reserves the right to change specifications at any time without prior notice.

Devices with a suffix code (2-letter or letter/digit/letter combination) added to their generic code are not necessarily subject to

the conditions and limits contained in this report.

Provisional Data Sheet. Types R3047TC24x-28x Issue 2

Page 12 of 12

May, 2001

R3047TC26N [LITTELFUSE]

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