R3636EC18M [LITTELFUSE]
Silicon Controlled Rectifier, 7168 A, 1800 V, SCR, 101A352, 3 PIN;型号: | R3636EC18M |
厂家: | LITTELFUSE |
描述: | Silicon Controlled Rectifier, 7168 A, 1800 V, SCR, 101A352, 3 PIN |
文件: | 总12页 (文件大小:463K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
Date:- 30 Mar, 2007
Data Sheet Issue:- 1
WESTCODE
An IXYS Company
Distributed Gate Thyristor
Types R3636EC16# to R3636EC20#
Absolute Maximum Ratings
MAXIMUM
LIMITS
1600-2000
1600-2000
1600-2000
1700-2100
VOLTAGE RATINGS (Note 1)
UNITS
VDRM
VDSM
VRRM
VRSM
Repetitive peak off-state voltage
Non-repetitive peak off-state voltage
Repetitive peak reverse voltage
Non-repetitive peak reverse voltage
V
V
V
V
MAXIMUM
LIMITS
OTHER RATINGS
UNITS
IT(AV)
IT(AV)
IT(AV)
IT(RMS)
IT(d.c.)
ITSM
ITSM2
I2t
Maximum average on-state current, Tsink=55°C (note 2)
Maximum average on-state current. Tsink=85°C (note 2)
Maximum average on-state current. Tsink=85°C (note 3)
Nominal RMS on-state current, Tsink=25°C (note 2)
D.C. on-state current, Tsink=25°C (note 4)
Peak non-repetitive surge tp=10ms, VRM=0.6VRRM (note 5)
Peak non-repetitive surge tp=10ms, VRM≤10V (note 5)
I2t capacity for fusing tp=10ms, VRM=0.6VRRM (note 5)
I2t capacity for fusing tp=10ms, VRM≤10V (note 5)
Maximum rate of rise of on-state current (repetitive) (Note 6)
Maximum rate of rise of on-state current (non-repetitive) (Note 6)
Peak reverse gate voltage
3636
A
A
2501
1518
A
7168
A
6233
A
38.9
kA
kA
A2s
A2s
A/µs
A/µs
V
42.7
7.57×106
9.12×106
500
I2t
diT/dt
1000
VRGM
PG(AV)
PGM
VGD
5
Mean forward gate power
4
W
Peak forward gate power
50
W
Non-trigger gate voltage (Note 7)
0.25
V
Tj op
Operating temperature range
-40 to +125
-40 to +150
°C
°C
Tstg
Storage temperature range
Notes:-
1) De-rating factor of 0.13% per °C is applicable for Tj below 25°C.
2) Double side cooled, single phase; 50Hz, 180° half-sinewave.
3) Single side cooled, single phase; 50Hz, 180° half-sinewave.
4) Double side cooled.
5) Half-sinewave, 125°C Tj initial.
6) VD=67% VDRM, IFG=2A, tr≤0.5µs, Tcase=125°C.
7) Rated VDRM
.
Data Sheet. Types R3636EC16# to R3636EC20# Issue 1
Page 1 of 12
March, 2007
WESTCODE An IXYS Company
Distributed Gate Thyristor Types R3636EC16# to R3636EC20#
Characteristics
PARAMETER
MIN.
TYP. MAX. TEST CONDITIONS (Note 1)
UNITS
VTM
VTM
V0
Maximum peak on-state voltage
Maximum peak on-state voltage
Threshold voltage
-
-
1.95 ITM=5000A
2.86 ITM=10700A
1.173
V
V
-
-
-
-
V
rS
Slope resistance
-
-
-
0.155
mΩ
V/µs
mA
mA
V
dv/dt Critical rate of rise of off-state voltage
200
-
VD=80% VDRM, gate o/c, linear ramp
IDRM
IRRM
VGT
IGT
VGD
IH
Peak off-state current
Peak reverse current
-
-
-
-
-
-
-
-
-
-
-
-
60
-
300 Rated VDRM
300 Rated VRRM
Gate trigger voltage
-
3.0
Tj=25°C
600
VD=10V, IT=3A
Gate trigger current
-
mA
Gate non-trigger voltage
Holding current
-
0.25 Rated VDRM
1000 Tj=25°C
-
mA
µs
tgd
Gate-controlled turn-on delay time
Turn-on time
0.8
1.0
1750
750
220
7.5
1.5
VD=67% VDRM, IT=2000A, di/dt=60A/µs,
I
FG=2A, tr=0.5µs, Tj=25°C
tgt
2.0
Qrr
Qra
Irm
Recovered charge
-
µC
µC
A
Recovered charge, 50% chord
Reverse recovery current
Reverse recovery time, 50% chord
1500
I
TM=4000A, tp=2000µs, di/dt=60A/µs,
Vr=100V
-
-
trr
µs
I
TM=4000A, tp=2000µs, di/dt=60A/µs,
-
-
-
140
200
Vr=100V, Vdr=67%VDRM, dVdr/dt=20V/µs
ITM=4000A, tp=2000µs, di/dt=60A/µs,
Vr=100V, Vdr=67%VDRM, dVdr/dt=200V/µs
tq
Turn-off time
µs
60
-
-
-
0.0075 Double side cooled
K/W
K/W
kN
RthJK Thermal resistance, junction to heatsink
-
-
0.0150 Single side cooled
F
Mounting force
Weight
63
-
77
-
Wt
1.23
kg
Notes:-
1) Unless otherwise indicated Tj=125°C.
2) The required tq (specified with dVdr/dt=200V/µs) is represented by a ‘#’ in the device part number. See ordering information for
details of tq codes.
Data Sheet. Types R3636EC16# to R3636EC20# Issue 1
Page 2 of 12
March, 2007
WESTCODE An IXYS Company
Notes on Ratings and Characteristics
1.0 Voltage Grade Table
Distributed Gate Thyristor Types R3636EC16# to R3636EC20#
V
DRM VDSM VRRM
VRSM
V
VD VR
DC V
1040
1150
1250
Voltage Grade
V
16
18
20
1600
1800
2000
1700
1900
2100
2.0 Extension of Voltage Grades
This report is applicable to other and higher voltage grades when supply has been agreed by
Sales/Production.
3.0 Extension of Turn-off Time
This Report is applicable to other tq/re-applied dv/dt combinations when supply has been agreed by
Sales/Production.
4.0 Repetitive dv/dt
Higher dv/dt selections are available up to 1000V/µs on request.
5.0 De-rating Factor
A blocking voltage de-rating factor of 0.13%/°C is applicable to this device for Tj below 25°C.
6.0 Rate of rise of on-state current
The maximum un-primed rate of rise of on-state current must not exceed 1000A/µs at any time during
turn-on on a non-repetitive basis. For repetitive performance, the on-state rate of rise of current must not
exceed 500A/µs at any time during turn-on. Note that these values of rate of rise of current apply to the
total device current including that from any local snubber network.
7.0 Square wave ratings
These ratings are given for load component rate of rise of forward current of 100 and 500 A/µs.
8.0 Duty cycle lines
The 100% duty cycle is represented on all the ratings by a straight line. Other duties can be included as
parallel to the first.
9.0 Maximum Operating Frequency
The maximum operating frequency is set by the on-state duty, the time required for the thyristor to turn off
(tq) and for the off-state voltage to reach full value (tv), i.e.
1
f max =
tpulse +tq +tv
Data Sheet. Types R3636EC16# to R3636EC20# Issue 1
Page 3 of 12
March, 2007
WESTCODE An IXYS Company
Distributed Gate Thyristor Types R3636EC16# to R3636EC20#
10.0 On-State Energy per Pulse Characteristics
These curves enable rapid estimation of device dissipation to be obtained for conditions not covered by
the frequency ratings.
Let Ep be the Energy per pulse for a given current and pulse width, in joules
Let RthJK be the steady-state d.c. thermal resistance (junction to sink)
and TK be the heat sink temperature.
Then the average dissipation will be:
WAV = EP ⋅ f and TK (max.) =125 −
(
WAV ⋅ RthJK
)
11.0 Reverse recovery ratings
(i) Qra is based on 50% Irm chord as shown in Fig. 1 below.
Fig. 1
(ii) Qrr is based on a 150µs integration time.
150µs
Qrr = irr .dt
∫
i.e.
0
t1
t2
K Factor =
(iii)
12.0 Reverse Recovery Loss
12.1 Determination by Measurement
From waveforms of recovery current obtained from a high frequency shunt (see Note 1, Page 5) and
reverse voltage present during recovery, an instantaneous reverse recovery loss waveform must be
constructed. Let the area under this waveform be E joules per pulse. A new heat sink temperature can
then be evaluated from:
TK (new) = TK (original ) − E ⋅
(k + f ⋅ RthJK
)
where k = 0.227 (°C/W)/s
E = Area under reverse loss waveform per pulse in joules (W.s.)
f = rated frequency Hz at the original heat sink temperature.
RthJK = d.c. thermal resistance (°C/W).
The total dissipation is now given by:
W(TOT) = W(original) + E ⋅ f
Data Sheet. Types R3636EC16# to R3636EC20# Issue 1
Page 4 of 12
March, 2007
WESTCODE An IXYS Company
Distributed Gate Thyristor Types R3636EC16# to R3636EC20#
12.2 Determination without Measurement
In circumstances where it is not possible to measure voltage and current conditions, or for design
purposes, the additional losses E in joules may be estimated as follows.
Let E be the value of energy per reverse cycle in joules (curves in Figure 9).
Let f be the operating frequency in Hz
TK
= TK
−
original
( )
(
E ⋅ Rth ⋅ f
)
(
new
)
Where TK (new) is the required maximum heat sink temperature and
TK (original) is the heat sink temperature given with the frequency ratings.
A suitable R-C snubber network is connected across the thyristor to restrict the transient reverse voltage
to a peak value (Vrm) of 67% of the maximum grade. If a different grade is being used or Vrm is other than
67% of Grade, the reverse loss may be approximated by a pro rata adjustment of the maximum value
obtained from the curves.
NOTE 1- Reverse Recovery Loss by Measurement
This thyristor has a low reverse recovered charge and peak reverse recovery current. When measuring
the charge care must be taken to ensure that:
(a) a.c. coupled devices such as current transformers are not affected by prior passage of high
amplitude forward current.
(b) A suitable, polarised, clipping circuit must be connected to the input of the measuring oscilloscope
to avoid overloading the internal amplifiers by the relatively high amplitude forward current signal
(c) Measurement of reverse recovery waveform should be carried out with an appropriate critically
damped snubber, connected across diode anode to cathode. The formula used for the calculation
of this snubber is shown below:
Vr
R2 = 4⋅
CS ⋅ di
dt
Where: Vr = Commutating source voltage
CS = Snubber capacitance
R
= Snubber resistance
13.0 Gate Drive
The nominal requirement for a typical gate drive is illustrated below. An open circuit voltage of at least 30V
is assumed. This gate drive must be applied when using the full di/dt capability of the device.
IGM
4A/µs
IG
tp1
The magnitude of IGM should be between five and ten times IGT, which is shown on page 2. Its duration
(tp1) should be 20µs or sufficient to allow the anode current to reach ten times IL, whichever is greater.
Otherwise, an increase in pulse current could be needed to supply the necessary charge to trigger. The
‘back-porch’ current IG should remain flowing for the same duration as the anode current and have a
magnitude in the order of 1.5 times IGT.
Data Sheet. Types R3636EC16# to R3636EC20# Issue 1
Page 5 of 12
March, 2007
WESTCODE An IXYS Company
Distributed Gate Thyristor Types R3636EC16# to R3636EC20#
14.0 Computer Modelling Parameters
14.1 Calculating VT using ABCD Coefficients
The on-state characteristic IT vs VT, on page 7 is represented in two ways;
(i)
the well established V0 and rs tangent used for rating purposes and
a set of constants A, B, C, D, forming the coefficients of the representative equation for VT in
terms of IT given below:
(ii)
VT = A+ B⋅ln
(
IT + C ⋅ IT + D ⋅ IT
)
The constants, derived by curve fitting software, are given in this report for hot and cold characteristics
where possible. The resulting values for VT agree with the true device characteristic over a current range,
which is limited to that plotted.
25°C Coefficients
125°C Coefficients
A
B
C
D
1.699211
0.04818511
2.075468×10-4
-0.01660626
A
B
C
D
3.102332103
-0.4078209
4.569058×10-6
0.03250304
14.2 D.C. Thermal Impedance Calculation
−t
τ p
p=n
r = r ⋅ 1− e
∑
t
p
p=1
Where p = 1 to n, n is the number of terms in the series.
t = Duration of heating pulse in seconds.
rt = Thermal resistance at time t.
rp = Amplitude of pth term.
τp = Time Constant of rth term.
D.C. Double Side Cooled
Term
rp
1
2
3
3.589585×10-3
2.412881×10-3
1.447505×10-3
0.8082131
0.1832005
0.01869883
τp
D.C. Single Side Cooled
2
Term
rp
1
3
4
8.727296×10-3
2.224163×10-3
2.795381×10-3
1.378979×10-3
6.087499
1.57797
0.1730504
0.01784783
τp
Data Sheet. Types R3636EC16# to R3636EC20# Issue 1
Page 6 of 12
March, 2007
WESTCODE An IXYS Company
Distributed Gate Thyristor Types R3636EC16# to R3636EC20#
Curves
Figure 1 – On-state characteristics of Limit device
Figure 2 – Transient thermal impedance
10000
0.1
R3636EC16#-20#
R3636EC16#-20#
Issue 1
Issue 1
SSC
0.015K/W
0.01
DSC
0.0075K/W
Tj = 125°C
Tj = 25°C
1000
0.001
0.0001
100
0.00001
0
0.5
1
1.5
2
2.5
0.0001
0.001
0.01
0.1
1
10
100
Instantaneous on-state voltage - VT (V)
Time (s)
Figure 3 – Gate characteristics – Trigger limits
Figure 4 – Gate characteristics – Power curves
20
8
R3636EC16#-20#
R3636EC16#-20#
Issue 1
Issue 1
Tj=25°C
Tj=25°C
18
7
6
16
Max VG dc
14
12
Max VG dc
5
10
4
PG Max 50W dc
IGT, VGT
8
6
4
3
2
Min VG dc
PG 4W dc
Min VG dc
1
2
0
IGD, VGD
0
0
0.5
1
1.5
0
2
4
6
8
10
Gate Trigger Current - IGT (A)
Gate Trigger Current - IGT (A)
Data Sheet. Types R3636EC16# to R3636EC20# Issue 1
Page 7 of 12
March, 2007
WESTCODE An IXYS Company
Distributed Gate Thyristor Types R3636EC16# to R3636EC20#
Figure 5 – Total recovered charge, Qrr
Figure 6 – Recovered charge, Qra (50% chord)
10000
10000
R3636EC16#-20#
R3636EC16#-20#
Issue 1
Issue 1
Tj = 125°C
Tj = 125°C
5000A
3000A
2000A
5000A
3000A
2000A
1000A
1000A
1000
1000
100
100
10
100
Commutation rate - di/dt (A/µs)
1000
10
100
1000
Commutation rate - di/dt (A/µs)
Figure 7 – Peak reverse recovery current, Irm
Figure 8 – Maximum recovery time, trr (50% chord)
10000
100
R3636EC16#-20#
R3636EC16#-20#
Issue 1
Issue 1
Tj = 125°C
Tj = 125°C
5000A
3000A
1000
2000A
1000A
10
5000A
3000A
2000A
1000A
100
10
1
10
100
1000
10
100
1000
Commutation rate - di/dt (A/µs)
Commutation rate - di/dt (A/µs)
Data Sheet. Types R3636EC16# to R3636EC20# Issue 1
Page 8 of 12
March, 2007
WESTCODE An IXYS Company
Distributed Gate Thyristor Types R3636EC16# to R3636EC20#
Figure 9 – Reverse Recovery Energy
Figure 10 – Sine wave energy per pulse
10
1.00E+02
R3636EC16#-20#
R3636EC16#-20#
Issue 1
Issue 1
Tj = 125°C
Vr = 400V
Tj=125°C
Measured
without
snubber
1.00E+01
6kA
4000A
3000A
2000A
1000A
4kA
1
1.00E+00
2kA
1kA
1.00E-01
500A
0.1
1.00E-02
10
100
1000
1.00E-05
1.00E-04
1.00E-03
1.00E-02
Commutation rate - di/dt (A/µs)
Pulse width (s)
Figure 11 – Sine wave frequency ratings
Figure 12 – Sine wave frequency ratings
1.00E+05
1.00E+05
R3636EC16#-20#
Issue 1
R3636EC16#-20#
Issue 1
TK=85°C
TK=55°C
1kA
1kA
100% Duty Cycle
100% Duty Cycle
1.00E+04
1.00E+03
1.00E+02
1.00E+01
2kA
2kA
1.00E+04
1.00E+03
1.00E+02
4kA
6kA
4kA
6kA
1.00E-05
1.00E-04
1.00E-03
1.00E-02
1.00E-05
1.00E-04
1.00E-03
1.00E-02
Pulse Width (s)
Pulse width (s)
Data Sheet. Types R3636EC16# to R3636EC20# Issue 1
Page 9 of 12
March, 2007
WESTCODE An IXYS Company
Distributed Gate Thyristor Types R3636EC16# to R3636EC20#
Figure 13 – Square wave frequency ratings
Figure 14 – Square wave frequency ratings
1.00E+05
1.00E+05
R3636EC16#-20#
R3636EC16#-20#
Issue 1
Issue 1
di/dt=100A/µs
di/dt=500A/µs
TK=55°C
TK=55°C
1kA
2kA
1.00E+04
1.00E+04
1.00E+03
1.00E+02
1.00E+01
100% Duty Cycle
2kA
4kA
100% Duty Cycle
4kA
6kA
6kA
1.00E+03
1.00E+02
1.00E+01
1.00E-05
1.00E-04
1.00E-03
1.00E-02
1.00E-05
1.00E-04
1.00E-03
1.00E-02
Pulse width (s)
Pulse width (s)
Figure 15 – Square wave frequency ratings
Figure 16 – Square wave frequency ratings
1.00E+05
1.00E+05
R3636EC16#-20#
Issue 1
R3636EC16#-20#
Issue 1
di/dt=100A/µs
TK=85°C
di/dt=500A/µs
TK=85°C
1kA
500A
1kA
1.00E+04
1.00E+03
1.00E+02
1.00E+01
1.00E+04
1.00E+03
1.00E+02
1.00E+01
2kA
100% Duty Cycle
100% Duty Cycle
2kA
4kA
4kA
6kA
6kA
1.00E-05
1.00E-04
1.00E-03
1.00E-02
1.00E-05
1.00E-04
1.00E-03
1.00E-02
Pulse width (s)
Pulse width (s)
Data Sheet. Types R3636EC16# to R3636EC20# Issue 1
Page 10 of 12
March, 2007
WESTCODE An IXYS Company
Distributed Gate Thyristor Types R3636EC16# to R3636EC20#
Figure 17 – Square wave energy per pulse
Figure 18 – Square wave energy per pulse
1.00E+03
1.00E+03
R3636EC16#-20#
R3636EC16#-20#
Issue 1
di/dt=100A/µs
Tj=125°C
Issue 1
di/dt=500A/µs
Tj=125°C
1.00E+02
1.00E+02
1.00E+01
1.00E+01
6kA
6kA
4kA
4kA
1.00E+00
1.00E+00
2kA
1kA
2kA
1kA
1.00E-01
1.00E-02
1.00E-01
500A
500A
1.00E-02
1.00E-05
1.00E-04
1.00E-03
1.00E-02
1.00E-05
1.00E-04
1.00E-03
1.00E-02
Pulse width (s)
Pulse width (s)
Figure 19 – Maximum surge and I2t Ratings
Gate may temporarily lose control of conduction angle
1000000
100000
10000
1.00E+08
I2t: VRRM≤10V
R3636EC16#-20#
Issue 1
Tj (initial) = 125°C
I2t: 60% VRRM
1.00E+07
1.00E+06
ITSM: VRRM≤10V
ITSM: 60% VRRM
1
3
5
10
1
5
10
50 100
Duration of surge (ms)
Duration of surge (cycles @ 50Hz)
Data Sheet. Types R3636EC16# to R3636EC20# Issue 1
Page 11 of 12
March, 2007
WESTCODE An IXYS Company
Distributed Gate Thyristor Types R3636EC16# to R3636EC20#
Outline Drawing & Ordering Information
101A352
ORDERING INFORMATION
(Please quote 10 digit code as below)
ꢀꢀ
R3636
EC
#
Voltage code
VDRM/100
16-20
tq Code
Fixed
Fixed
K=60µs, L=65µs, M=70µs, N=100µs,
P=120µs, R=140µs, S=160µs, T=200µs
Type Code
Outline Code
Typical order code: R3636EC18N – 1800V VDSM, VRSM, 100µs tq, 26.5mm clamp height capsule.
IXYS Semiconductor GmbH
Edisonstraße 15
Westcode Semiconductors Ltd
Langley Park Way, Langley Park,
Chippenham, Wiltshire, SN15 1GE.
Tel: +44 (0)1249 444524
D-68623 Lampertheim
Tel: +49 6206 503-0
WESTCODE
Fax: +49 6206 503-627
Fax: +44 (0)1249 659448
An IXYS Company
E-mail: marcom@ixys.de
E-mail: WSL.sales@westcode.com
IXYS Corporation
Westcode Semiconductors Inc
3270 Cherry Avenue
3540 Bassett Street
www.westcode.com
Santa Clara CA 95054 USA
Tel: +1 (408) 982 0700
Fax: +1 (408) 496 0670
E-mail: sales@ixys.net
Long Beach CA 90807 USA
Tel: +1 (562) 595 6971
Fax: +1 (562) 595 8182
www.ixys.com
E-mail: WSI.sales@westcode.com
The information contained herein is confidential and is protected by Copyright. The information may not be used or disclosed except
with the written permission of and in the manner permitted by the proprietors Westcode Semiconductors Ltd.
© Westcode Semiconductors Ltd.
In the interest of product improvement, Westcode reserves the right to change specifications at any time without prior notice.
Devices with a suffix code (2-letter, 3-letter or letter/digit/letter combination) added to their generic code are not necessarily subject to
the conditions and limits contained in this report.
Data Sheet. Types R3636EC16# to R3636EC20# Issue 1
Page 12 of 12
March, 2007
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LITTELFUSE
R3636EC20T
Silicon Controlled Rectifier, 7168A I(T)RMS, 2000V V(DRM), 2000V V(RRM), 1 Element, 101A352, 3 PIN
LITTELFUSE
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