R3968FT20M [LITTELFUSE]
Silicon Controlled Rectifier,;
| 型号： | R3968FT20M |
| 厂家： | 
LITTELFUSE |
| 描述： | Silicon Controlled Rectifier, 栅 栅极 |
| 文件： | 总13页 (文件大小：1159K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Date:- 11 Oct 2007
Data Sheet Issue:- 3
An IXYS Company
Provisional Data
Distributed Gate Thyristor
Types R3968F#20x to R3968F#28x
Development Type Number: RX075F#20x-28x
Absolute Maximum Ratings
MAXIMUM
LIMITS
VOLTAGE RATINGS
UNITS
VDRM
VDSM
VRRM
VRSM
Repetitive peak off-state voltage, (note 1)
Non-repetitive peak off-state voltage, (note 1)
Repetitive peak reverse voltage, (note 1)
Non-repetitive peak reverse voltage, (note 1)
2000-2800
2000-2800
2000-2800
2100-2900
V
V
V
V
MAXIMUM
LIMITS
OTHER RATINGS
UNITS
IT(AV)M
IT(AV)M
IT(AV)M
IT(RMS)
IT(d.c.)
ITSM
Maximum average on-state current, Tsink=55°C, (note 2)
Maximum average on-state current. Tsink=85°C, (note 2)
Maximum average on-state current. Tsink=85°C, (note 3)
Nominal RMS on-state current, Tsink=25°C, (note 2)
D.C. on-state current, Tsink=25°C, (note 4)
4001
2691
A
A
1582
A
7988
A
6712
A
Peak non-repetitive surge tp=10ms, Vrm=60%VRRM, (note 5)
Peak non-repetitive surge tp=10ms, Vrm£10V, (note 5)
I2t capacity for fusing tp=10ms, Vrm=60%VRRM, (note 5)
I2t capacity for fusing tp=10ms, Vrm£10V, (note 5)
66.0
kA
kA
A2s
A2s
ITSM2
I2t
72.5
21.78×106
26.28×106
1000
I2t
Non-repetitive
Repetitive (50Hz, 60s)
Continuous (50Hz)
500
(di/dt)cr Critical rate of rise of on-state current (note 6)
A/µs
250
VRGM
PG(AV)
PGM
Peak reverse gate voltage
Mean forward gate power
Peak forward gate power
Operating temperature range
Storage temperature range
5
V
4
W
W
°C
°C
50
Tj op
-40 to +125
-40 to +150
Tstg
Notes:-
1) De-rating factor of 0.13% per °C is applicable for Tj below 25°C.
2) Double side cooled, single phase; 50Hz, 180° half-sinewave.
3) Single side cooled, single phase; 50Hz, 180° half-sinewave.
4) Double side cooled.
5) Half-sinewave, 125°C Tj initial.
6) VD=67% VDRM, IFG=2A, tr£0.5µs, Tcase=125°C.
Provisional Data Sheet. Types R3968F#20x to R3968F#28x Issue 3
Page 1 of 12
October 2007
WESTCODE
An IXYS Company
Distributed Gate Types R3968F#20x to R3968F#28x
Characteristics
PARAMETER
MIN.
TYP. MAX. TEST CONDITIONS (Note 1)
UNITS
VTM
VT0
rT
Maximum peak on-state voltage
Threshold voltage
-
-
2.20 ITM=6000A
V
V
-
-
1.453
0.125
-
Slope resistance
-
-
mW
V/µs
mA
mA
V
(dv/dt)cr Critical rate of rise of off-state voltage
200
-
VD=80% VDRM, Linear ramp, Gate o/c
IDRM
IRRM
VGT
IGT
VGD
IH
Peak off-state current
Peak reverse current
Gate trigger voltage
-
-
-
-
-
-
-
-
-
-
-
-
-
-
150 Rated VDRM
300 Rated VRRM
-
3.0
Tj=25°C
600
VD=10V, IT=3A
Gate trigger current
-
mA
V
Gate non-trigger voltage
Holding current
-
0.25 Rated VDRM
1000 Tj=25°C
2.0
-
mA
tgd
Gate controlled turn-on delay time
Turn-on time
0.8
2.0
2600
1700
360
9.5
VD=67% VDRM, ITM=4000A, di/dt=60A/µs,
IFG=2A, tr=0.5µs, Tj=25°C
µs
tgt
3.0
Qrr
Qra
Irm
Recovered charge
3200
µC
µC
A
Recovered charge, 50% Chord
Reverse recovery current
Reverse recovery time
-
-
-
ITM=4000A, tp=2000µs, di/dt=60A/µs,
Vr=100V
trr
µs
ITM=4000A, tp=2000µs, di/dt=60A/µs,
Vr=100V, Vdr=67%VDRM, dVdr/dt=20V/µs
ITM=4000A, tp=2000µs, di/dt=60A/µs,
Vr=100V, Vdr=67%VDRM, dVdr/dt=200V/µs
50
60
-
-
70
tq
Range of maximum turn-off time (note 2)
µs
100
-
-
-
-
0.0065 Double side cooled
0.0130 Single side cooled
99
K/W
K/W
kN
RthJK
F
Thermal resistance, junction to heatsink
Mounting force
Weight
81
-
-
2.8
2.0
-
-
Outline options FC & FT
Outline option FD
Wt
kg
-
Notes:-
1) Unless otherwise indicated Tj=125°C.
2) The required maximum tq (specified with dVdr/dt=200V/µs) is represented by the 10th character in the device part number. See
ordering information for details of tq codes.
3) For other clamp forces, please consult factory
Notes on rupture rated packages.
This product is available with a non-rupture rated package.
For additional details on these products, please consult factory.
Provisional Data Sheet. Types R3968F#20x to R3968F#28x Issue 3
Page 2 of 12
October 2007
WESTCODE
An IXYS Company
Distributed Gate Types R3968F#20x to R3968F#28x
Notes on Ratings and Characteristics
1.0 Voltage Grade Table
VDRM VDSM VRRM
VRSM
V
VD
Voltage Grade
V
DC V
1250
1350
1450
1550
1650
20
22
24
26
28
2000
2200
2400
2600
2800
2100
2300
2500
2700
2900
2.0 Extension of Voltage Grades
This report is applicable to other and higher voltage grades when supply has been agreed by
Sales/Production.
3.0 Extension of Turn-off Time
This Report is applicable to other tq/re-applied dv/dt combinations when supply has been agreed by
Sales/Production.
4.0 Repetitive dv/dt
Higher dv/dt selections are available up to 1000V/µs on request.
5.0 De-rating Factor
A blocking voltage de-rating factor of 0.13%/°C is applicable to this device for Tj below 25°C.
6.0 Snubber Components
When selecting snubber components, care must be taken not to use excessively large values of snubber
capacitor or excessively small values of snubber resistor. Such excessive component values may lead to
device damage due to the large resultant values of snubber discharge current. If required, please consult
the factory for assistance.
7.0 Rate of rise of on-state current
The maximum un-primed rate of rise of on-state current must not exceed 1000A/µs at any time during turn-
on on a non-repetitive basis. For repetitive performance, the on-state rate of rise of current must not exceed
500A/µs at any time during turn-on. Note that these values of rate of rise of current apply to the total device
current including that from any local snubber network.
8.0 Gate Drive
The nominal requirement for a typical gate drive is illustrated below. An open circuit voltage of at least 30V
is assumed. This gate drive must be applied when using the full di/dt capability of the device.
IGM
4A/µs
IG
tp1
The magnitude of IGM should be between five and ten times IGT, which is shown on page 2. Its duration (tp1)
should be 20µs or sufficient to allow the anode current to reach ten times IL, whichever is greater. Otherwise,
an increase in pulse current could be needed to supply the necessary charge to trigger. The ‘back-porch’
current IG should remain flowing for the same duration as the anode current and have a magnitude in the
order of 1.5 times IGT.
Provisional Data Sheet. Types R3968F#20x to R3968F#28x Issue 3
Page 3 of 12
October 2007
WESTCODE
An IXYS Company
Distributed Gate Types R3968F#20x to R3968F#28x
9.0 Frequency Ratings
The curves illustrated in figures 10 to 18 are for guidance only and are superseded by the maximum ratings
shown on page 1.
10.0 Square wave ratings
These ratings are given for load component rate of rise of forward current of 100 and 500 A/µs.
11.0 Duty cycle lines
The 100% duty cycle is represented on all the ratings by a straight line. Other duties can be included as
parallel to the first.
12.0 Maximum Operating Frequency
The maximum operating frequency is set by the on-state duty, the time required for the thyristor to turn off
(tq) and for the off-state voltage to reach full value (tv), i.e.
1
f
max
=
t
pulse+t
q
+t
v
13.0 On-State Energy per Pulse Characteristics
These curves enable rapid estimation of device dissipation to be obtained for conditions not covered by the
frequency ratings.
Let Ep be the Energy per pulse for a given current and pulse width, in joules
Let RthJK be the steady-state d.c. thermal resistance (junction to sink)
and TK be the heat sink temperature.
Then the average dissipation will be:
WAV = EP × f and TK (max.) =125 -
(
WAV × RthJK
)
14.0 Reverse recovery ratings
(i) Qra is based on 50% Irm chord as shown in Fig.
Fig.
(ii) Qrr is based on a 150µs integration time i.e.
150µs
Qrr = irr.dt
ò
0
(iii)
t1
K Factor =
t2
Provisional Data Sheet. Types R3968F#20x to R3968F#28x Issue 3
Page 4 of 12
October 2007
WESTCODE
An IXYS Company
Distributed Gate Types R3968F#20x to R3968F#28x
15.0 Reverse Recovery Loss
15.1 Determination by Measurement
From waveforms of recovery current obtained from a high frequency shunt (see Note 1, Page 5) and reverse
voltage present during recovery, an instantaneous reverse recovery loss waveform must be constructed.
Let the area under this waveform be E joules per pulse. A new heat sink temperature can then be evaluated
from the following:
TK (new) = TK (original ) - E ×
(
k + f × RthJK
)
Where k=0.227 (°C/W)/s
E = Area under reverse loss waveform per pulse in joules (W.s.)
f = rated frequency Hz at the original heat sink temperature.
RthJK = d.c. thermal resistance (°C/W).
The total dissipation is now given by:
W =W(original) + E × f
(TOT)
15.2 Determination without Measurement
In circumstances where it is not possible to measure voltage and current conditions, or for design purposes,
the additional losses E in joules may be estimated as follows.
Let E be the value of energy per reverse cycle in joules (curves in Figure 9).
Let f be the operating frequency in Hz
TK
= TK
-
)
(
E × Rth × f
)
(
new
)
(
original
Where TK (new) is the required maximum heat sink temperature and
TK (original) is the heat sink temperature given with the frequency ratings.
A suitable R-C snubber network is connected across the thyristor to restrict the transient reverse voltage to
a peak value (Vrm) of 67% of the maximum grade. If a different grade is being used or Vrm is other than 67%
of Grade, the reverse loss may be approximated by a pro rata adjustment of the maximum value obtained
from the curves.
NOTE 1- Reverse Recovery Loss by Measurement
This thyristor has a low reverse recovered charge and peak reverse recovery current. When measuring the
charge, care must be taken to ensure that:
(a) a.c. coupled devices such as current transformers are not affected by prior passage of high
amplitude forward current.
(b) A suitable, polarised, clipping circuit must be connected to the input of the measuring oscilloscope
to avoid overloading the internal amplifiers by the relatively high amplitude forward current signal
(c) Measurement of reverse recovery waveform should be carried out with an appropriate critically
damped snubber, connected across diode anode to cathode. The formula used for the calculation
of this snubber is shown below:
Vr
= Commutating source voltage
Vr
CS × di
R2 = 4×
Where: CS = Snubber capacitance
R
= Snubber resistance
dt
Provisional Data Sheet. Types R3968F#20x to R3968F#28x Issue 3
Page 5 of 12
October 2007
WESTCODE
An IXYS Company
Distributed Gate Types R3968F#20x to R3968F#28x
16.0 Computer Modelling Parameters
16.1 Calculating VT using ABCD Coefficients
The on-state characteristic IT vs VT, on page 7 is represented in two ways;
(i)
(ii)
the well established VT0 and rT tangent used for rating purposes and
a set of constants A, B, C, D, forming the coefficients of the representative equation for VT in terms
of IT given below:
VT = A+ B×ln
(
IT +C×IT + D× IT
)
The constants, derived by curve fitting software, are given in this report for hot and cold characteristics
where possible. The resulting values for VT agree with the true device characteristic over a current range,
which is limited to that plotted.
25°C Coefficients
125°C Coefficients
A
B
C
D
1.3629084
0.1684087
1.910292×10-4
A
B
C
D
1.726243
-0.04672899
1.452344×10-4
1.145080×10-4
-0.02403392
16.2 D.C. Thermal Impedance Calculation
-t
p=n
æ
ö
t p
ç
p
÷
r = r × 1- e
å
t
ç
÷
p=1
è
ø
Where p = 1 to n, n is the number of terms in the series.
t = Duration of heating pulse in seconds.
rt = Thermal resistance at time t.
rp = Amplitude of pth term.
= Time Constant of rth term.
tp
D.C. Single Side Cooled
2
Term
rp
1
3
4
3.424745×10-3
1.745273×10-3
8.532017×10-4
3.457329×10-4
8.430889×10-3
1.125391
0.1878348
0.02788979
tp
D.C. Double Side Cooled
2
Term
rp
1
3
4
8.375269×10-3
2.518437×10-3
1.193758×10-3
7.45432×10-4
8.929845
0.4711304
0.08221244
0.01221961
tp
Provisional Data Sheet. Types R3968F#20x to R3968F#28x Issue 3
Page 6 of 12
October 2007
WESTCODE
An IXYS Company
Distributed Gate Types R3968F#20x to R3968F#28x
Curves
Figure 1 – On-state characteristics of Limit device
Figure 2 – Transient thermal impedance
10000
0.1
R3968F#20x-28x
AD Issue 3
R3968F#20x-28x
AD Issue 3
Tj = 125°C
SSC 0.013K/W
Tj = 25°C
0.01
DSC 0.0065K/W
1000
0.001
0.0001
100
0.00001
0
0.5
1
1.5
2
2.5
3
0.0001
0.001
0.01
0.1
1
10
100
Instantaneous on-state voltage - VT (V)
Time (s)
Figure 3 – Gate characteristics – Trigger limits
Figure 4 – Gate characteristics – Power curves
20
8
R3968F#20x-28x
R3968F#20x-28x
AD Issue 3
AD Issue 3
Tj=25°C
7
Tj=25°C
18
Max VG dc
16
14
6
5
12
10
8
Max VG dc
IGT, VGT
4
3
PG Max 50W dc
6
2
4
Min VG dc
PG 4W dc
Min VG dc
1
2
IGD, VGD
0
0
0
2
4
6
8
10
0
0.25
0.5
0.75
1
1.25
1.5
Gate Trigger Current - IGT (A)
Gate Trigger Current - IGT (A)
Provisional Data Sheet. Types R3968F#20x to R3968F#28x Issue 3
Page 7 of 12
October 2007
WESTCODE
An IXYS Company
Distributed Gate Types R3968F#20x to R3968F#28x
Figure 5 – Total recovered charge, Qrr
Figure 6 – Recovered charge, Qra (50% chord)
10000
10000
R3968F#20x-28x
AD Issue 3
4000A
2000A
1000A
R3968F#20x-28x
AD Issue 3
Tj = 125°C
4000A
Tj = 125°C
2000A
500A
1000A
500A
1000
1000
100
100
1
10
100
1000
1
10
100
1000
Commutation rate - di/dt (A/µs)
Commutation rate - di/dt (A/µs)
Figure 7 – Peak reverse recovery current, Irm
Figure 8 – Maximum recovery time, trr (50% chord)
100
10000
R3968F#20x-28x
AD Issue 3
R3968F#20x-28x
AD Issue 3
Tj = 125°C
Tj = 125°C
4000A
2000A
1000A
500A
1000
100
10
10
4000A
2000A
1000A
500A
1
1
10
100
1000
1
10
100
1000
Commutation rate - di/dt (A/µs)
Commutation rate - di/dt (A/µs)
Provisional Data Sheet. Types R3968F#20x to R3968F#28x Issue 3
Page 8 of 12
October 2007
WESTCODE
An IXYS Company
Distributed Gate Types R3968F#20x to R3968F#28x
Figure 9 – Reverse recovery energy per pulse
Figure 10 – Sine wave energy per pulse
1.00E+03
10000
R3968F#20x-28x
AD Issue 3
R3968F#20x-28x
AD Issue 3
Tj=125°C
Tj = 125°C
Vr = 400V
Measured
without
snubber
1.00E+02
4000A
3000A
2000A
1000A
8000A
1.00E+01
6000A
4000A
1000
1.00E+00
2000A
1000A
1.00E-01
500A
1.00E-02
100
1.00E-05
1.00E-04
1.00E-03
1.00E-02
10
100
1000
Pulse width (s)
Commutation rate - di/dt (A/µs)
Figure 11 – Sine wave frequency ratings
Figure 12 – Sine wave frequency ratings
1.00E+05
1.00E+05
R3968F#20x-28x
R3968F#20x-28x
AD Issue 3
AD Issue 3
1000A
TK=85°C
TK=55°C
1000A
2000A
100% Duty Cycle
100% Duty Cycle
2000A
1.00E+04
1.00E+03
1.00E+02
1.00E+01
1.00E+04
1.00E+03
1.00E+02
1.00E+01
4000A
4000A
6000A
6000A
8000A
8000A
1.00E-05
1.00E-04
1.00E-03
1.00E-02
1.00E-05
1.00E-04
1.00E-03
1.00E-02
Pulse Width (s)
Pulse width (s)
Provisional Data Sheet. Types R3968F#20x to R3968F#28x Issue 3
Page 9 of 12
October 2007
WESTCODE
An IXYS Company
Distributed Gate Types R3968F#20x to R3968F#28x
Figure 13 – Square wave frequency ratings
Figure 14 – Square wave frequency ratings
1.00E+05
1.00E+05
R3968F#20x-28x
AD Issue 3
R3968F#20x-28x
AD Issue 3
di/dt=500A/µs
di/dt=100A/µs
TK=55°C
TK=55°C
1kA
2000A
100% Duty Cycle
1.00E+04
1.00E+03
1.00E+02
1.00E+01
1.00E+04
2kA
100% Duty Cycle
4000A
4kA
6kA
6000A
8000A
8kA
1.00E+03
1.00E+02
1.00E+01
1.00E-05
1.00E-04
1.00E-03
1.00E-02
1.00E-05
1.00E-04
1.00E-03
1.00E-02
Pulse width (s)
Pulse width (s)
Figure 15 – Square wave frequency ratings
Figure 16 – Square wave frequency ratings
1.00E+05
1.00E+05
R3968F#20x-28x
AD Issue 3
R3968F#20x-28x
500A
AD Issue 3
di/dt=100A/µs
TK=85°C
di/dt=500A/µs
TK=85°C
1000A
2000A
100% Duty Cycle
1kA
2kA
100% Duty Cycle
1.00E+04
1.00E+03
1.00E+02
1.00E+01
1.00E+04
1.00E+03
1.00E+02
1.00E+01
4000A
4kA
6kA
6000A
8000A
8kA
1.00E-05
1.00E-04
1.00E-03
1.00E-02
1.00E-05
1.00E-04
1.00E-03
1.00E-02
Pulse width (s)
Pulse width (s)
Provisional Data Sheet. Types R3968F#20x to R3968F#28x Issue 3
Page 10 of 12
October 2007
WESTCODE
An IXYS Company
Distributed Gate Types R3968F#20x to R3968F#28x
Figure 17 – Square wave energy per pulse
Figure 18 – Square wave energy per pulse
1.00E+03
1.00E+03
R3968F#20x-28x
AD Issue 3
R3968F#20x-28x
AD Issue 3
di/dt=500A/µs
di/dt=100A/µs
Tj=125°C
Tj=125°C
1.00E+02
1.00E+02
8000A
6000A
4000A
1.00E+01
8000A
1.00E+01
6000A
4000A
2000A
1000A
500A
1.00E+00
1.00E+00
2000A
1000A
1.00E-01
1.00E-01
500A
1.00E-02
1.00E-02
1.00E-05
1.00E-04
1.00E-03
1.00E-02
1.00E-05
1.00E-04
1.00E-03
1.00E-02
Pulse width (s)
Pulse width (s)
Figure 19 – Maximum surge and I2t Ratings
Gate may temporarily lose control of conduction angle
1000000
100000
10000
1.00E+09
R3968F#20x-28x
AD Issue 3
Tj (initial) = 125°C
I2t: VRRM£10V
I2t: 60% VRRM
1.00E+08
ITSM: VRRM£10V
ITSM: 60% VRRM
1.00E+07
1
3
5
10
1
5
10
50 100
Duration of surge (ms)
Duration of surge (cycles @ 50Hz)
Provisional Data Sheet. Types R3968F#20x to R3968F#28x Issue 3
Page 11 of 12
October 2007
WESTCODE
An IXYS Company
Distributed Gate Types R3968F#20x to R3968F#28x
Outline Drawing & Ordering Information
101A347
Outline options FC and FT
Outline option FD
ORDERING INFORMATION
(Please quote 10 digit code as below)
tt
R3968
F#
x
Outline Code
FC=36.5mm height,
FT=36.5mm height, rupture rated
FD=26mm height
Voltage code
VDRM/100
20-28
Turn-off time code
K=60µs, L=65µs,
M=70µs, N=100µs
Fixed
Type Code
Typical order code: R3968FT26L – 2600V VDRM, VRRM, tq=65µs, 36.5mm clamp height and rupture rated capsule.
IXYS Semiconductor GmbH
Edisonstraße 15
D-68623 Lampertheim
Tel: +49 6206 503-0
Fax: +49 6206 503-627
E-mail: marcom@ixys.de
Westcode Semiconductors Ltd
Langley Park Way, Langley Park,
Chippenham, Wiltshire, SN15 1GE.
Tel: +44 (0)1249 444524
Fax: +44 (0)1249 659448
E-mail: WSL.sales@westcode.com
An IXYS Company
IXYS Corporation
3540 Bassett Street
Westcode Semiconductors Inc
3270 Cherry Avenue
www.westcode.com
Santa Clara CA 95054 USA
Tel: +1 (408) 982 0700
Fax: +1 (408) 496 0670
E-mail: sales@ixys.net
Long Beach CA 90807 USA
Tel: +1 (562) 595 6971
Fax: +1 (562) 595 8182
E-mail: WSI.sales@westcode.com
www.ixys.com
The information contained herein is confidential and is protected by Copyright. The information may not be used or disclosed except
with the written permission of and in the manner permitted by the proprietors Westcode Semiconductors Ltd.
© Westcode Semiconductors Ltd.
In the interest of product improvement, Westcode reserves the right to change specifications at any time without prior notice.
Devices with a suffix code (2-letter, 3-letter or letter/digit/letter combination) added to their generic code are not necessarily subject to
the conditions and limits contained in this report.
Provisional Data Sheet. Types R3968F#20x to R3968F#28x Issue 3
Page 12 of 12
October 2007
Disclaimer Notice - Information furnished is believed to be accurate and reliable. However, users should independently
evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for,
and may not be used in, all applications. Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics.
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