S4004DS1RP [LITTELFUSE]

Silicon Controlled Rectifier, 4A I(T)RMS, 2500mA I(T), 400V V(DRM), 400V V(RRM), 1 Element, TO-252AA, DPAK-3;
S4004DS1RP
型号: S4004DS1RP
厂家: LITTELFUSE    LITTELFUSE
描述:

Silicon Controlled Rectifier, 4A I(T)RMS, 2500mA I(T), 400V V(DRM), 400V V(RRM), 1 Element, TO-252AA, DPAK-3

栅 栅极
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中文:  中文翻译
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Teccor® brandThyristors  
4 Amp Sensitive SCRs  
Sxx04xSx Series  
Description  
Excellent unidirectional switches for phase control  
applications such as heating and motor speed controls.  
Sensitive gate SCRs are easily triggered with microAmps  
of current as furnished by sense coils, proximity switches,  
and microprocessors.  
Features & Benefits  
tꢀ  
tꢀ  
3P)4ꢀDPNQMJBOU  
tꢀ  
7PMUBHFꢀDBQBCJMJUZꢀVQꢀ  
UPꢀꢁꢂꢂꢀ7  
(MBTTꢀoꢀQBTTJWBUFEꢀ  
junctions  
tꢀ  
30 A  
4VSHFꢀDBQBCJMJUZꢀVQꢀUPꢀ  
Main Features  
Applications  
Typical applications are capacitive discharge systems for  
strobe lights, nailers, staplers and gas engine ignition. Also  
controls for power tools, home/brown goods and white  
goods appliances.  
Symbol  
IT(RMS)  
Value  
4
Unit  
A
7DRMꢃ7RRM  
I(5  
400 to 600  
50 to 500  
7
μA  
Schematic Symbol  
A
K
G
Absolute Maximum Ratings  
Symbol  
Parameter  
Test Conditions  
Value  
Unit  
IT(RMS)  
I5ꢄ"7ꢅ  
RMS on-state current  
TC = 95°C  
4
A
Average on-state current  
TC = 75°C  
2.5  
A
A
TJOHMFꢀIBMGꢀDZDMFꢆꢀGꢀꢇꢀꢈꢂ)[ꢆ  
25  
T (initial) = 25°C  
J
ITSM  
Peak non-repetitive surge current  
TJOHMFꢀIBMGꢀDZDMFꢆꢀGꢀꢇꢀꢁꢂ)[ꢆ  
30  
T (initial) = 25°C  
J
I2t  
I2Uꢀ7BMVFꢀGPSꢀGVTJOH  
Critical rate of rise of on-state current  
Peak gate current  
tp = 8.3 ms  
3.7  
50  
A2s  
A/μs  
A
di/dt  
I(.  
Gꢀꢇꢀꢁꢂ)[ꢀꢆ5 = 110°C  
J
T = 110°C  
1
J
P(ꢄ"7ꢅ  
Tstg  
Average gate power dissipation  
Storage temperature range  
T = 110°C  
0.1  
W
J
-40 to 150  
-40 to 110  
°C  
T
Operating junction temperature range  
°C  
J
Sxx04xSx Series  
©2010 Littelfuse, Inc  
Specifications are subject to change without notice.  
Please refer to http://www.littelfuse.com for current information.  
209  
Revised: July 29, 2010 09:54 AM  
Teccor® brandThyristors  
4 Amp Sensitive SCRs  
Electrical Characteristics — (T = 25°C, unless otherwise specified)  
J
Value  
Symbol  
I(5  
Test Conditions  
Unit  
Sxx04xS1  
Sxx04xS2  
MAX.  
MAX.  
TYP.  
50  
200  
ꢀA  
7
7Dꢀꢇꢀꢁ7ꢆꢀꢀ3L = 100 8  
7Dꢀꢇꢀ7DRM; R(, = 1kΩ  
7(5  
dv/dt  
7(%  
7(3.  
I)  
0.8  
8
7ꢃçT  
7
7Dꢀꢇꢀ7DRM; RL = 3.3 k8; T = 110°C  
MIN.  
MIN.  
MAX.  
MAX.  
TYP.  
0.2  
6
J
I(3 = 10ꢀA  
IT = 20mA (initial); R(, = 1kohm  
(1)  
7
4
3
6
4
mA  
μs  
μs  
tq  
50  
tgt  
I( = 2 x I(5; PW = 15ꢀs; IT = 8A  
Notes :  
xx = voltage, x = package  
(1) IT=2A; tpꢇꢈꢂ˜TꢆꢀEWꢃEUꢇꢈ7ꢃ˜TꢆꢀEJꢃEUꢇꢉꢊꢂ"ꢃ˜T  
Static Characteristics  
Symbol  
Test Conditions  
Value  
Unit  
7TM  
Sxx04xSy IT = 8A; tp = 380 ꢀs  
MAX.  
MAX.  
1.6  
2
7
T = 25°C  
J
IDRM / IRRM  
7DRMꢀꢃꢀ7RRM - R(, = 1kohm  
μA  
T = 110°C  
100  
J
/PUFꢀꢋꢀYYꢀPSꢀ[ꢀꢇꢀWPMUBHFꢌꢀYꢀꢇꢀQBDLBHFꢌꢀZꢀꢇꢀTFOTJUJWJUZ  
Thermal Resistances  
Symbol  
Parameter  
Value  
3.8  
Unit  
4YYꢂꢍ74Z  
Junction to case (AC)  
Junction to ambient  
°C/W  
°C/W  
RR(J-C)  
Sxx04DSy  
3.0  
4YYꢂꢍ74Z  
85  
RR(J-A)  
Notes: xx = voltage, y = sensitivity  
Sxx04xSx Series  
©2010 Littelfuse, Inc  
Specifications are subject to change without notice.  
Please refer to http://www.littelfuse.com for current information.  
210  
Revised: July 29, 2010 09:54 AM  
Teccor® brandThyristors  
4 Amp Sensitive SCRs  
Figure 1: Normalized DC GateTrigger Current  
vs. JunctionTemperature  
Figure 2: Normalized DC GateTriggerVoltage  
vs. JunctionTemperature  
4.0  
3.0  
2.0  
1.0  
0.0  
2.0  
1.5  
1.0  
0.5  
0.0  
-40  
-15  
10  
35  
60  
85  
110  
110  
4.0  
-40  
-15  
10  
35  
60  
85  
110  
Junction Temperature (TJ) -- (°C)  
Junction Temperature (TJ) -- (°C)  
Figure 3: Normalized DC Holding Current  
vs. JunctionTemperature  
Figure 4: Normalized DC Latching Current  
vs. JunctionTemperature  
3.0  
2.5  
2.0  
1.5  
1.0  
0.5  
0.0  
3.0  
2.5  
2.0  
1.5  
1.0  
0.5  
0.0  
-40  
-15  
10  
35  
60  
85  
110  
-40  
-15  
10  
35  
60  
85  
Junction Temperature (TJ) -- (°C)  
Junction Temperature (TJ) -- (°C)  
Figure 5: On-State Current vs. On-State  
Voltage (Typical)  
Figure 6: Power Dissipation (Typical)  
vs. RMS On-State Current  
5.5  
5.0  
4.5  
4.0  
3.5  
3.0  
2.5  
2.0  
25  
TJ = 25°C  
20  
15  
Sxx04VSy  
Sxx04DSy  
10  
Sxx04VSy  
Sxx04DSy  
1.5  
1.0  
0.5  
0.0  
5
0
0.0  
0.5  
1.0  
1.5  
2.0  
2.5  
3.0  
3.5  
0.7  
0.8  
0.9  
1.0  
1.1  
1.2  
1.3  
1.4  
1.5  
1.6  
RMS On-State Current [IT(RMS)] - (Amps)  
Instantaneous On-state Voltage (v) – Volts  
/PUFꢋꢀYYꢀPSꢀ[ꢀꢇꢀWPMUBHFꢌꢀZꢀꢇꢀTFOTJUJWJUZ  
Sxx04xSx Series  
©2010 Littelfuse, Inc  
Specifications are subject to change without notice.  
Please refer to http://www.littelfuse.com for current information.  
211  
Revised: July 29, 2010 09:54 AM  
Teccor® brandThyristors  
4 Amp Sensitive SCRs  
Figure 7: Maximum Allowable CaseTemperature  
vs. RMS On-State Current  
Figure 8: Maximum Allowable CaseTemperature  
vs. Average On-State Current  
115  
110  
105  
100  
95  
115  
110  
Sxx04VSy  
Sxx04DSy  
Sxx04VSy  
Sxx04DSy  
105  
100  
95  
90  
90  
85  
85  
80  
80  
CURRENT WAVEFORM: Sinusoidal  
LOAD: Resistive or Inductive  
CONDUCTION ANGLE: 180°  
CURRENTWAVEFORM: Sinusoidal  
LOAD: Resistive or Inductive  
CONDUCTION ANGLE: 180°  
75  
75  
70  
70  
0.0  
0.5  
1.0  
1.5  
2.0  
2.5  
3.0  
0.0  
0.5  
1.0  
1.5  
2.0  
2.5  
3.0  
3.5  
4.0  
4.5  
Average On-State Current [IT(AVE)] - Amps  
RMS On-State Current [IT(RMS)] - Amps  
Figure 9: Maximum Allowable AmbientTemperature  
vs. RMS On-State Current  
Figure 10: Maximum Allowable AmbientTemperature  
vs. Average On-State Current  
120  
120  
CURRENTWAVEFORM: Sinusoidal  
LOAD: Resistive or Inductive  
CONDUCTION ANGLE: 180°  
CURRENT WAVEFORM: Sinusoidal  
LOAD: Resistive or Inductive  
CONDUCTION ANGLE: 180°  
FREE AIR RATING  
100  
100  
80  
60  
40  
20  
0
FREE AIR RATING  
80  
60  
Sxx04VSy  
Sxx04VSy  
40  
20  
0
0.0  
0.2  
0.4  
0.6  
0.8  
1.0  
1.2  
1.4  
0.0  
0.2  
0.4  
0.6  
0.8  
Average On-State Current [IT(AVE)] - Amps  
RMS On-State Current [IT(RMS)] - Amps  
Figure 11: Peak Repetitive Capacitor Discharge Current  
Figure 12: Peak Repetitive Sinusoidal Pulse Current  
180  
160  
180  
160  
140  
140  
1 Hz  
120  
120  
12 Hz  
1 Hz  
100  
100  
60 Hz  
80  
60  
40  
20  
0
80  
12 Hz  
60  
ITM  
ITRM  
40  
60 Hz  
20  
tW  
tW  
0
1
10  
100  
1
10  
100  
Pulse Current Duration (tW) - μs  
Pulse Current Duration (tW) - μs  
Note: xx = voltage, y = sensitivity  
Sxx04xSx Series  
©2010 Littelfuse, Inc  
Specifications are subject to change without notice.  
Please refer to http://www.littelfuse.com for current information.  
212  
Revised: July 29, 2010 09:54 AM  
/PUFꢋꢀꢀ7ꢊꢀ‰ꢀꢂꢀ7ꢀUPꢀꢊꢂꢀ7ꢀEDꢀNFUFSꢀ  
                                                                    
ꢊꢎꢀ(BUFꢀDPOUSPMꢀNBZꢀCFꢀMPTUꢀEVSJOHꢀBOEꢀJNNFEJBUFMZꢀ  
                                                                                               
Teccor® brandThyristors  
4 Amp Sensitive SCRs  
Figure 13: Surge Peak On-State Current vs. Number of Cycles  
100.0  
10.0  
1.0  
4611-:ꢀ'3&26&/$:ꢋꢀꢁꢂꢀ)[ꢀ4JOVTPJEBMꢀ  
LOAD: Resistive  
RMS On-State Current: [IT(RMS)]: Maximum Rated  
7BMVFꢀBUꢀ4QFDJmFEꢀ$BTFꢀ5FNQFSBUVSF  
Sxx04VSy  
Sxx04DSy  
Notes:  
following surge current interval.  
2. Overload may not be repeated until junction  
temperature has returned to steady-state  
rated value.  
0.1  
1
10  
100  
1000  
Surge Current Duration -- Full Cycles  
/PUFꢋꢀꢀYYꢀPSꢀ[ꢀꢉꢀWPMUBHFꢌꢀZꢀꢇꢀTFOTJUJWJUZ  
Figure 14: SimpleTest Circuit for GateTriggerVoltage and Current  
Reset  
Normally-closed  
Pushbutton  
7 ꢀ‰ꢀꢂꢀ7ꢀUPꢀꢊꢀ7ꢀEDꢀNFUFSꢀ  
I((‰5 ꢀꢂꢀN"ꢀUPꢀꢊꢀꢀN"ꢀEDꢀNJMMJBNNFUFSꢀ  
3ꢊꢀ‰ꢀꢊꢀLꢀQPUFOUJPNFUFS  
To measure gate trigger voltage and current, raise gate  
WPMUBHFꢀꢄ7 ꢅꢀVOUJMꢀNFUFSꢀSFBEJOHꢀ7ꢊꢀESPQTꢀGSPNꢀꢁꢀ7ꢀUPꢀꢊꢀ7ꢀ  
(BUFꢀUSJHH(F5SꢀWPMUBHFꢀJTꢀUIFꢀSFBEJOHꢀPOꢀ7(5ꢀKVTUꢀQSJPSꢀUPꢀ7ꢊꢀ  
ESPQQJOHꢎꢀ(BUFꢀUSJHHFSꢀꢀDVSSFOUꢀ*(5 Can be computed from  
the relationship  
100  
+
D.U.T.  
V1  
6VDC  
IGT  
IN4001  
IG  
R1  
100  
1 k  
(1%)  
7(5  
VGT  
____  
I(5 = I(-  
Amps  
1000  
where I(ꢀJTꢀSFBEJOHꢀꢄJOꢀBNQFSFTꢅꢀPOꢀNFUFSꢀKVTUꢀQSJPSꢀUPꢀ7ꢊꢀ  
dropping  
Note: I(5 may turn out to be a negative quantity (trigger  
current flows out from gate lead). If negative current  
occurs, I value is not a valid reading. Remove 1 k resistor  
and use I((5 as the more correct I(5 value. This will occur on  
12 ꢀA gate products.  
Sxx04xSx Series  
©2010 Littelfuse, Inc  
Specifications are subject to change without notice.  
Please refer to http://www.littelfuse.com for current information.  
213  
Revised: July 29, 2010 09:54 AM  
Teccor® brandThyristors  
4 Amp Sensitive SCRs  
Soldering Parameters  
Reflow Condition  
1Cꢀoꢀ'SFFꢀBTTFNCMZ  
tP  
TP  
-Temperature Min (Ts(min)  
)
150°C  
Ramp-up  
TL  
TS(max)  
Pre Heat -Temperature Max (Ts(max)  
-Time (min to max) (ts)  
)
200°C  
tL  
ꢁꢂꢀoꢀꢊꢏꢂꢀTFDT  
Ramp-down  
Preheat  
Average ramp up rate (LiquidusTemp)  
(TL) to peak  
5°C/second max  
5°C/second max  
TS(min)  
tS  
TS(max) toTL - Ramp-up Rate  
-Temperature (TL) (Liquidus) 217°C  
25  
Reflow  
time to peak temperature  
-Temperature (tL)  
ꢁꢂꢀoꢀꢊꢈꢂꢀTFDPOET  
Time  
PeakTemperature (TP)  
260+0/-5 °C  
Time within 5°C of actual peak  
Temperature (tp)  
ꢐꢂꢀoꢀꢍꢂꢀTFDPOET  
Ramp-down Rate  
5°C/second max  
8 minutes Max.  
280°C  
Time 25°C to peakTemperature (TP)  
Do not exceed  
Physical Specifications  
Environmental Specifications  
Test  
Specifications and Conditions  
Terminal Finish  
Body Material  
Lead Material  
100% MatteTin-plated  
MIL-STD-750, M-1040, Cond A Applied  
Peak AC voltage @ 125°C for 1008 hours ,  
R(, = 1kohms  
AC Blocking  
6-ꢀSFDPHOJ[FEꢀFQPYZꢀNFFUJOHꢀnBNNBCJMJUZꢀ  
DMBTTJmDBUJPOꢀꢓꢍ7ꢉꢂ  
MIL-STD-750, M-1051,  
Temperature Cycling 100 cycles; -40°C to +150°C;  
Copper Alloy  
15-min dwell-time  
EIA / JEDEC, JESD22-A101  
Temperature/  
ꢂꢏꢀIPVSTꢆꢀꢑꢐꢂ7ꢀꢉꢀ%$ꢋꢀꢏꢈ¡$ꢆꢀ  
Humidity  
85% rel humidity  
Design Considerations  
MIL-STD-750, M-1031,  
1008 hours; 150°C  
HighTemp Storage  
Careful selection of the correct device for the applications  
operating parameters and environment will go a long way  
UPXBSEꢀFYUFOEJOHꢀUIFꢀPQFSBUJOHꢀMJGFꢀPGꢀUIF5IZSJTUPSꢎꢀ(PPEꢀ  
design practice should limit the maximum continuous  
current through the main terminals to 75% of the device  
rating. Other ways to ensure long life for a power discrete  
semiconductor are proper heat sinking and selection of  
voltage ratings for worst case conditions. Overheating,  
overvoltage (including dv/dt), and surge currents are  
the main killers of semiconductors. Correct mounting,  
soldering, and forming of the leads also help protect  
against component damage.  
Low-Temp Storage  
Thermal Shock  
1008 hours; -40°C  
MIL-STD-750, M-1056  
10 cycles; 0°C to 100°C; 5-min dwelltime  
at each temperature; 10 sec (max) transfer  
time between temperature  
EIA / JEDEC, JESD22-A102  
168 hours (121°C at 2 ATMs) and  
ꢂꢒꢀ3ꢃ)  
Autoclave  
Resistance to  
Solder Heat  
MIL-STD-750 Method 2031  
Solderability  
Lead Bend  
ANSI/J-STD-002, category 3, Test A  
MIL-STD-750, M-2036 Cond E  
Sxx04xSx Series  
©2010 Littelfuse, Inc  
Specifications are subject to change without notice.  
Please refer to http://www.littelfuse.com for current information.  
214  
Revised: July 29, 2010 09:54 AM  
Teccor® brandThyristors  
4 Amp Sensitive SCRs  
Dimensions TO-251AA (V/I-Package) V/I-PAKThrough Hole  
TC MEASURING POINT  
AREA: 0.040 IN2  
Inches  
Typ  
Millimeters  
Typ  
Dimension  
Min  
Max  
0.050  
0.245  
0.375  
0.213  
0.265  
0.033  
0.093  
0.095  
0.184  
0.023  
0.044  
0.023  
0.052  
0.044  
0.044  
0.084  
Min  
1.02  
5.97  
8.89  
5.21  
6.48  
0.69  
2.21  
2.16  
4.47  
0.46  
0.97  
0.46  
1.06  
0.86  
0.86  
1.86  
Max  
1.27  
6.22  
9.53  
5.41  
6.73  
0.84  
2.36  
2.41  
4.67  
0.58  
1.12  
0.58  
1.32  
1.11  
E
H
J
5.28  
.208  
Anode  
A
D
A
B
C
D
E
F
0.040  
0.235  
0.350  
0.205  
0.255  
0.027  
0.087  
0.085  
0.176  
0.018  
0.038  
0.018  
0.042  
0.034  
0.034  
0.074  
0.044  
0.242  
0.361  
0.208  
0.262  
0.031  
0.090  
0.092  
0.180  
0.020  
0.040  
0.020  
0.047  
0.039  
0.039  
0.079  
1.11  
6.15  
9.18  
5.29  
6.66  
0.80  
2.28  
2.34  
4.57  
0.51  
1.01  
5.34  
.210  
B
R
P
Q
S
(
)
I
K
C
J
,
L
L
Cathode  
Anode  
GATE  
F
0.52  
1.20  
G
P
Q
R
S
I
1.00  
1.00  
1.11  
2.00  
2.11  
Dimensions TO-252AA (D-Package) — D-PAK Surface Mount  
E
D
Inches  
Typ  
Millimeters  
Typ  
6.71  
.264  
Anode  
5.28  
.208  
TC MEASURING POINT  
Dimension  
Min  
0.040  
0.235  
0.106  
0.205  
0.255  
0.027  
0.087  
0.085  
0.176  
0.018  
0.038  
0.018  
0.000  
0.021  
0°  
Max  
0.050  
0.245  
0.113  
0.213  
0.265  
0.033  
0.093  
0.095  
0.184  
0.023  
0.044  
0.023  
0.004  
0.027  
5°  
Min  
1.02  
5.97  
2.69  
5.21  
6.48  
0.69  
2.21  
2.16  
4.47  
0.46  
0.97  
0.46  
0.00  
0.53  
0°  
Max  
1.27  
6.22  
2.87  
5.41  
6.73  
0.84  
2.36  
2.41  
4.67  
0.58  
1.12  
0.58  
0.10  
0.69  
5°  
A
B
6.71  
.264  
A
B
C
D
E
F
0.043  
0.243  
0.108  
0.208  
0.262  
0.031  
0.090  
0.092  
0.179  
0.020  
0.040  
0.020  
0.000  
0.026  
0°  
1.09  
5.34  
.210  
6.16  
2.74  
1.60  
.063  
P
Q
C
1.80  
.071  
5.29  
6.65  
0.80  
2.28  
2.33  
4.55  
0.51  
1.02  
GATE  
F
AREA: 0.040 IN2  
Cathode  
Anode  
3
.118  
4.60  
.181  
G
I
L
(
)
I
O
H
K
J
M
N
J
,
L
0.51  
0.00  
0.67  
0°  
M
N
O
P
Q
0.042  
0.034  
0.047  
0.039  
0.052  
0.044  
1.06  
0.86  
1.20  
1.32  
1.11  
1.00  
Sxx04xSx Series  
©2010 Littelfuse, Inc  
Specifications are subject to change without notice.  
Please refer to http://www.littelfuse.com for current information.  
215  
Revised: July 29, 2010 09:54 AM  
Teccor® brandThyristors  
4 Amp Sensitive SCRs  
Product Selector  
Voltage  
Part Number  
Gate Sensitivity  
Type  
Package  
400V  
600V  
800V  
1000V  
Sxx04DS1  
Sxx04DS2  
4YYꢂꢍ74ꢊ  
X
X
X
X
X
X
X
X
50μA  
200μA  
50μA  
Sensitive SCR  
Sensitive SCR  
Sensitive SCR  
Sensitive SCR  
TO-252  
TO-252  
TO-251  
TO-251  
4YYꢂꢍ74ꢐ  
200μA  
/PUFꢋꢀYYꢀꢇꢀ7PMUBHF  
Packing Options  
Part Number  
Marking  
Weight  
Packing Mode  
Tube  
Base Quantity  
Sxx04DSyTP  
Sxx04DSy  
Sxx04DSy  
4YYꢂꢍ74Z  
0.3g  
0.3g  
0.4g  
750 (75 per tube)  
2500  
Sxx04DSyRP  
Embossed Carrier  
Tube  
4YYꢂꢍ74Z51  
750 (75 per tube)  
Note: xx = voltage, y = sensitivity  
TO-252 Embossed Carrier Reel Pack (RP) Specs  
Part Marking System  
TO-252AA – (D Package)  
TO-251AA – (V Package)  
0.059  
(1.5)  
0.157  
(4.0)  
DIA  
Gate  
Cathode  
0.63  
(16.0)  
0.524  
(13.3)  
*
0.315  
(8.0)  
*
Cover tape  
Anode  
12.99  
(330.0)  
0.512 (13.0)  
Arbor Hole  
Diameter  
Part Numbering System  
Dimensions  
are in inches  
(and millimeters).  
S 6004 V S1  
0.64  
(16.3)  
DEVICE TYPE  
S: SCR  
Direction of Feed  
SENSITIVITY & TYPE  
VOLTAGE RATING  
4: 400V  
6: 600V  
S1: 50  
A
μ
μ
S2: 200  
A
PACKAGE TYPE  
V: TO-251 (V/I-Pak)  
D: TO-252 (D-Pak)  
CURRENT RATING  
04: 4A  
Sxx04xSx Series  
©2010 Littelfuse, Inc  
216  
Specifications are subject to change without notice.  
Please refer to http://www.littelfuse.com for current information.  
Revised: July 29, 2010 09:54 AM  

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