S401E75 [LITTELFUSE]
Silicon Controlled Rectifier, 1A I(T)RMS, 640mA I(T), 400V V(DRM), 400V V(RRM), 1 Element, TO-92, ROHS COMPLIANT, PLASTIC PACKAGE-3;型号: | S401E75 |
厂家: | LITTELFUSE |
描述: | Silicon Controlled Rectifier, 1A I(T)RMS, 640mA I(T), 400V V(DRM), 400V V(RRM), 1 Element, TO-92, ROHS COMPLIANT, PLASTIC PACKAGE-3 栅 栅极 |
文件: | 总9页 (文件大小:270K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
Teccor® brandThyristors
1 Amp Standard SCRs
Sx01E & SxN1 Series
Description
Excellent for lower current heat, lamp, and audible alarm
controls for home goods.
Standard phase control SCRs are triggered with few
milliamperes of current at less than 1.5V potential.
Features & Benefits
tꢀ
tꢀ
3P)4ꢀDPNQMJBOU
tꢀ
7PMUBHFꢀDBQBCJMJUZꢀVQꢀ
to 600 V
(MBTTꢀoꢀQBTTJWBUFEꢀ
junctions
tꢀ4VSHFꢀDBQBCJMJUZꢀVQꢀUPꢀ
30 A
Applications
Main Features
Typical applications are AC solid-state switches,
fluidlevel sensors, strobes, and capacitive-discharge
ignition systems.
Symbol
Value
Unit
A
IT(RMS)
VDRM/VRRM
IGT
1
400 to 600
10
V
mA
Schematic Symbol
A
K
G
Absolute Maximum Ratings — Standard SCRs
Symbol
IT(RMS)
IT(AV)
Parameter
Test Conditions
TC = 90°C
Value
1
Unit
A
RMS on-state current
Average on-state current
TC = 90°C
0.64
A
single half cycle; f = 50Hz;
TJ (initial) = 25°C
25
30
ITSM
Peak non-repetitive surge current
A
single half cycle; f = 60Hz;
TJ (initial) = 25°C
I2t
I2t Value for fusing
Critical rate of rise of on-state current
Peak gate current
tp = 8.3 ms
f = 60Hz ;TJ = 125°C
TJ = 125°C
3.7
50
A2s
A/μs
A
di/dt
IGM
1.5
PG(AV)
Tstg
TJ
Average gate power dissipation
Storage temperature range
0.3
W
TJ = 125°C
-40 to 150
-40 to 125
°C
Operating junction temperature range
°C
©2013 Littelfuse, Inc
Specifications are subject to change without notice.
209
Sx01E & SxN1 Series
Revised: 09/23/13
Teccor® brandThyristors
1 Amp Standard SCRs
Electrical Characteristics (TJ = 25°C, unless otherwise specified)
Symbol Test Conditions
IGT
Value
10
Unit
mA
V
MAX.
MIN.
MAX.
VD = 12V; RL = 60 ꢀ
1
VGT
1.5
20
40
0.2
30
35
2
VD = VDRM; gate open;TJ = 100°C
VD = VDRM; gate open;TJ = 125°C
VD = VDRM; RL = 3.3 kꢀ; TJ = 125°C
IT = 200mA (initial)
dv/dt
MIN.
V/μs
VGD
IH
MIN.
MAX.
MAX.
TYP.
V
mA
μs
tq
(1)
tgt
IG = 2 x IGT; PW = 15ꢀs; IT = 2A
μs
(1) IT=1A; tp=50ꢀs; dv/dt=20V/ꢀs; di/dt=-10A/ꢀs
Static Characteristics
Symbol
Test Conditions
IT = 2A; tp = 380 ꢀs
Value
Unit
VTM
MAX.
1.6
10
V
TJ = 25°C
TJ = 100°C
TJ = 125°C
IDRM / IRRM
VDRM = VRRM
MAX.
200
500
μA
Thermal Resistances
Symbol
Parameter
Value
Unit
Sx01E
SxN1
50
Junction to case (AC)
Junction to ambient
°C/W
°C/W
Rꢁ(J-C)
35*
145
Sx01E
Rꢁ(J-A)
Notes : x = voltage
* = Mounted on 1 cm2 copper (two-ounce) foil surface
©2013 Littelfuse, Inc
Specifications are subject to change without notice.
210
Sx01E & SxN1 Series
Revised: 09/23/13
Teccor® brandThyristors
1 Amp Standard SCRs
Figure 1: Normalized DC GateTrigger Current
vs. JunctionTemperature
Figure 2: Normalized DC GateTriggerVoltage
vs. JunctionTemperature
2.0
1.5
1.0
0.5
0.0
2.0
1.5
1.0
0.5
0.0
125
125
1.0
-40
-15
10
35
60
85
110
110
0.9
-40
-15
10
35
60
85
110
125
Junction Temperature (TJ) -- (°C)
Junction Temperature (TJ) -- (°C)
Figure 3: Normalized DC Holding Current
vs. JunctionTemperature
Figure 4: On-State Current vs. On-State
Voltage (Typical)
2.0
1.5
1.0
0.5
0.0
25
TJ = 25°C
20
15
10
5
0
0.7
0.8
0.9
1.0
1.1
1.2
1.3
1.4
1.5
1.6
-40
-15
10
35
60
85
Instantaneous On-state Voltage (vT) – Volts
Junction Temperature (TJ) -- (°C)
Figure 5: Power Dissipation (Typical)
vs. RMS On-State Current
Figure 6: Maximum Allowable CaseTemperature
vs. RMS On-State Current
130
125
120
115
110
105
100
95
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0.0
90
CURRENT WAVEFORM: Sinusoidal
LOAD: Resistive or Inductive
CONDUCTION ANGLE: 180°
85
80
0.0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
1.1
0.0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
RMS On-State Current [IT(RMS)] - Amps
RMS On-State Current [IT(RMS)] - Amps
©2013 Littelfuse, Inc
Specifications are subject to change without notice.
211
Sx01E & SxN1 Series
Revised: 09/23/13
Teccor® brandThyristors
1 Amp Standard SCRs
Figure 7: Maximum Allowable CaseTemperature
Figure 8: Maximum Allowable AmbientTemperature
vs. RMS On-State Current
vs. Average On-State Current
130
125
120
115
110
105
100
95
120
CURRENT WAVEFORM: Sinusoidal
LOAD: Resistive or Inductive
CONDUCTION ANGLE: 180°
100
FREE AIR RATING
80
60
40
20
0
90
CURRENT WAVEFORM: Sinusoidal
LOAD: Resistive or Inductive
CONDUCTION ANGLE: 180°
85
80
0.0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
0.0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
RMS On-State Current [IT(RMS)] - Amps
Average On-State Current [IT(AVE)] - Amps
Figure 9: Maximum Allowable AmbientTemperature
vs. Average On-State Current
Figure 10: Peak Capacitor Discharge Current
120
100
CURRENT WAVEFORM: Sinusoidal
LOAD: Resistive or Inductive
CONDUCTION ANGLE: 180°
FREE AIR RATING
100
80
60
40
20
0
10
ITRM
tW
1
0.0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.5
1.0
10.0
50.0
Pulse Current Duration (tW) - ms
Average On-State Current [IT(AVE)] - Amps
Figure 11: Peak Capacitor Discharge Current Derating
1.2
1.0
0.8
0.6
0.4
0.2
0.0
0
25
50
75
100
125
150
Case Temperature (TC) - °C
©2013 Littelfuse, Inc
Specifications are subject to change without notice.
212
Sx01E & SxN1 Series
Revised: 09/23/13
Teccor® brandThyristors
1 Amp Standard SCRs
Figure 12: Surge Peak On-State Current vs. Number of Cycles
100.0
SUPPLY FREQUENCY: 60 Hz Sinusoidal
LOAD: Resistive
RMS On-State Current: [IT(RMS)]: Maximum Rated
Value at Specified Case Temperature
10.0
Notes:
1. Gate control may be lost during and immediately
following surge current interval.
2. Overload may not be repeated until junction
temperature has returned to steady-state
rated value.
1.0
0.1
1
10
100
1000
Surge Current Duration -- Full Cycles
Soldering Parameters
Reflow Condition
1Cꢀoꢀ'SFFꢀBTTFNCMZ
tP
TP
-Temperature Min (Ts(min)
)
150°C
Ramp-up
TL
TS(max)
Pre Heat -Temperature Max (Ts(max)
-Time (min to max) (ts)
)
200°C
tL
ꢁꢂꢀoꢀꢃꢄꢂꢀTFDT
Ramp-down
Preheat
Average ramp up rate (LiquidusTemp)
(TL) to peak
5°C/second max
TS(min)
tS
TS(max) toTL - Ramp-up Rate
5°C/second max
217°C
-Temperature (TL) (Liquidus)
Reflow
25
time to peak temperature
-Temperature (tL)
ꢁꢂꢀoꢀꢃꢅꢂꢀTFDPOET
260+0/-5 °C
Time
PeakTemperature (TP)
Time within 5°C of actual peak
Temperature (tp)
ꢆꢂꢀoꢀꢇꢂꢀTFDPOET
Ramp-down Rate
5°C/second max
8 minutes Max.
280°C
Time 25°C to peakTemperature (TP)
Do not exceed
©2013 Littelfuse, Inc
Specifications are subject to change without notice.
213
Sx01E & SxN1 Series
Revised: 09/23/13
Teccor® brandThyristors
1 Amp Standard SCRs
Physical Specifications
Environmental Specifications
Test
AC Blocking
Specifications and Conditions
Terminal Finish
Body Material
Lead Material
100% MatteTin-plated
MIL-STD-750, M-1040, Cond A Applied
Peak AC voltage @ 125°C for 1008 hours
UL recognized epoxy meeting flammability
classification 94V-0
MIL-STD-750, M-1051,
100 cycles; -40°C to +150°C; 15-min
dwell-time
Temperature Cycling
Copper Alloy
EIA / JEDEC, JESD22-A101
1008 hours; 320V - DC: 85°C; 85%
rel humidity
Temperature/
Humidity
MIL-STD-750, M-1031,
1008 hours; 150°C
HighTemp Storage
Low-Temp Storage
Design Considerations
1008 hours; -40°C
Careful selection of the correct device for the application’s
operating parameters and environment will go a long way
toward extending the operating life of theThyristor. Good
design practice should limit the maximum continuous
current through the main terminals to 75% of the device
rating. Other ways to ensure long life for a power discrete
semiconductor are proper heat sinking and selection of
voltage ratings for worst case conditions. Overheating,
overvoltage (including dv/dt), and surge currents are
the main killers of semiconductors. Correct mounting,
soldering, and forming of the leads also help protect
against component damage.
MIL-STD-750, M-1056
10 cycles; 0°C to 100°C; 5-min dwell-
time at each temperature; 10 sec (max)
transfer time between temperature
Thermal Shock
Autoclave
EIA / JEDEC, JESD22-A102
168 hours (121°C at 2 ATMs) and
100% R/H
Resistance to
Solder Heat
MIL-STD-750 Method 2031
Solderability
Lead Bend
ANSI/J-STD-002, category 3, Test A
MIL-STD-750, M-2036 Cond E
Dimensions –TO-92 (E Package)
TC Measuring Point
Inches
Millimeters
Dimension
Min
Max
Min
Max
A
A
B
D
E
0.176
0.500
0.095
0.150
0.046
0.135
0.088
0.176
0.088
0.013
0.013
0.196
4.47
12.70
2.41
3.81
1.16
4.98
0.105
2.67
F
0.054
0.145
0.096
0.186
0.096
0.019
0.017
1.37
3.68
2.44
4.73
2.44
0.48
0.43
B
G
H
J
3.43
2.23
4.47
2.23
0.33
0.33
K
L
Cathode
Anode
M
Gate
E
All leads insulated from case. Case is electrically nonconductive.
G
H
M
F
L
D
K
J
©2013 Littelfuse, Inc
Specifications are subject to change without notice.
214
Sx01E & SxN1 Series
Revised: 09/23/13
Teccor® brandThyristors
1 Amp Standard SCRs
Dimensions - Compak (C Package)
T
/ T Temperature
L
C
Inches
Millimeters
Min
Measurement Point
Dimension
Gate
B
D
Min
Max
0.156
0.220
0.087
0.181
0.063
0.096
0.008
0.104
0.053
0.016
0.055
0.028
0.033
0.058
Max
3.95
5.60
2.20
4.60
1.60
2.45
0.20
2.65
1.35
0.41
1.40
0.71
0.84
1.47
M
A
0.130
0.201
0.077
0.159
0.030
0.075
0.002
0.077
0.043
0.006
0.030
0.022
0.027
0.052
3.30
5.10
1.95
4.05
0.75
1.90
0.05
1.95
1.09
0.15
0.76
0.56
0.69
1.32
N
P
B
A
C
C
D
Cathode
E
Anode
F
G
F
H
L
H
J
E
J
K
G
K
0.079
(2.0)
0.079
(2.0)
0.079
(2.0)
L
M
N
P
0.040
(1.0)
0.110
(2.8)
0.030
(0.76)
Dimensions are in inches
(and millimeters).
Pad Outline
Product Selector
Voltage
Part Number
Gate Sensitivity
Type
Package
400V
600V
800V
1000V
Sx01E
SxN1
X
X
X
X
10mA
10mA
Standard SCR
Standard SCR
TO-92
Compak
Note: x = Voltage
Packing Options
Part Number
Sx01E
Marking
Weight
Packing Mode
Bulk
Base Quantity
Sx01E
Sx01E
Sx01E
SxN1
0.19 g
0.19 g
0.19 g
0.08 g
2000
2000
2000
2500
Sx01ERP
Reel Pack
Sx01EAP
Ammo Pack
Embossed Carrier
SxN1RP
Note: x = Voltage
©2013 Littelfuse, Inc
Specifications are subject to change without notice.
215
Sx01E & SxN1 Series
Revised: 09/23/13
Teccor® brandThyristors
1 Amp Standard SCRs
TO-92 (3-lead) Reel Pack (RP) Radial Leaded Specifications
Meets all EIA-468-C Standards
0.02 (0.5)
0.236
(6.0)
0.098 (2.5) MAX
1.26
1.6
(32.0)
(41.0)
0.708
(18.0)
0.354
(9.0)
0.5
Cathode
Anode
0.1 (2.54)
14.17(360.0)
(12.7)
0.2 (5.08) Gate
0.157
DIA
(4.0)
Flat up
1.97
(50.0)
Dimensions
are in inches
(and millimeters).
Direction of Feed
TO-92 (3-lead) Ammo Pack (AP) Radial Leaded Specifications
Meets all EIA-468-C Standards
0.02 (0.5)
0.236
(6.0)
0.098 (2.5) MAX
1.27
1.62
(32.2)
(41.2)
0.708
(18.0)
0.354
(9.0)
0.157
Anode
0.2 (5.08)
0.5
0.1 (2.54)
Cathode
Gate
DIA
(4.0)
(12.7)
Flat down
25 Devices per fold
1.85
(47.0)
12.2
(310.0)
Dimensions
are in inches
(and millimeters).
1.85
(47.0)
13.3
(338.0)
©2013 Littelfuse, Inc
Specifications are subject to change without notice.
216
Sx01E & SxN1 Series
Revised: 09/23/13
Teccor® brandThyristors
1 Amp Standard SCRs
Compak Embossed Carrier Reel Pack (RP) Specifications
Meets all EIA-481-1 Standards
0.157
(4.0)
Anode
0.47
(12.0)
0.36
(9.2)
8.0
0.315
(8.0)
Gate
Cover tape
0.059
(1.5)
DIA
Cathode
12.99
(330.0)
0.512 (13.0) Arbor
Hole Dia.
Dimensions
are in inches
(and millimeters).
0.49
(12.4)
Direction of Feed
Part Numbering System
Part Marking System
S 6 01 E 75
TO-92 (E Package)
Compak (C Package)
S601E
DEVICE TYPE
S: SCR
S6N1
Lead Form Dimensions
xx: Lead Form Option
YMXXX
YMLXX
®
®
SENSITIVITY & TYPE
[blank]: 10mA
VOLTAGE RATING
4: 400V
6: 600V
(TO-92)
Date Code Marking
Y:Year Code
M: Month Code
(Compak)
1: 10mA
Date Code Marking
Y:Year Code
XXX: Lot Trace Code
M: Month Code
L: Location Code
XX: Lot Serial Code
PACKAGE TYPE
E: TO-92 SCR
N: Compak
CURRENT RATING
01: 1A (TO-92)
N: 1A (Compak)
©2013 Littelfuse, Inc
Specifications are subject to change without notice.
217
Sx01E & SxN1 Series
Revised: 09/23/13
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