S404DS2RP [LITTELFUSE]
Silicon Controlled Rectifier, TO-252AA, ROHS COMPLIANT, PLASTIC, DPAK-3;
| 型号： | S404DS2RP |
| 厂家： | 
LITTELFUSE |
| 描述： | Silicon Controlled Rectifier, TO-252AA, ROHS COMPLIANT, PLASTIC, DPAK-3 |
| 文件： | 总8页 (文件大小：200K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Teccor® brandThyristors
4 Amp Sensitive SCRs
Sxx04xSx Series
Description
Excellent unidirectional switches for phase control
applications such as heating and motor speed controls.
Sensitive gate SCRs are easily triggered with microAmps
of current as furnished by sense coils, proximity switches,
and microprocessors.
Features & Benefits
tꢀ
tꢀ
3P)4ꢀDPNQMJBOU
tꢀ
7PMUBHFꢀDBQBCJMJUZꢀVQꢀ
to 600 V
(MBTTꢀoꢀQBTTJWBUFEꢀ
junctions
tꢀ
30 A
4VSHFꢀDBQBCJMJUZꢀVQꢀUPꢀ
Main Features
Applications
Typical applications are capacitive discharge systems for
strobe lights, nailers, staplers and gas engine ignition. Also
controls for power tools, home/brown goods and white
goods appliances.
Symbol
IT(RMS)
Value
4
Unit
A
VDRM/VRRM
IGT
400 to 600
50 to 500
V
μA
Schematic Symbol
A
K
G
Absolute Maximum Ratings
Symbol
Parameter
RMS on-state current
Test Conditions
Value
Unit
IT(RMS)
TC = 75°C
4
A
single half cycle; f = 50Hz;
16
20
T (initial) = 25°C
J
ITSM
Peak non-repetitive surge current
A
single half cycle; f = 60Hz;
T (initial) = 25°C
J
I2t
I2t Value for fusing
Critical rate of rise of on-state current
Peak gate current
tp = 8.3 ms
1.6
50
A2s
A/μs
A
di/dt
IGM
f = 60Hz ;T = 110°C
J
T = 110°C
1
J
PG(AV)
Tstg
Average gate power dissipation
Storage temperature range
T = 110°C
0.1
W
J
-40 to 150
-40 to 110
°C
T
Operating junction temperature range
°C
J
Sxx04xSx Series
©2008 Littelfuse, Inc.
209
Revised: July 9, 2008
Specifications are subject to change without notice.
Please refer to http://www.littelfuse.com for current information.
Teccor® brandThyristors
4 Amp Sensitive SCRs
Absolute Maximum Ratings
Symbol
Parameter
Test Conditions
Value
Unit
IT(RMS)
RMS on-state current
TC = 95°C
4
A
single half cycle; f = 50Hz;
25
30
T (initial) = 25°C
J
ITSM
Peak non-repetitive surge current
A
single half cycle; f = 60Hz;
T (initial) = 25°C
J
I2t
I2t Value for fusing
Critical rate of rise of on-state current
Peak gate current
tp = 8.3 ms
3.7
50
A2s
A/μs
A
di/dt
IGM
f = 60Hz ;T = 110°C
J
1
T = 110°C
J
PG(AV)
Tstg
Average gate power dissipation
Storage temperature range
0.1
W
T = 110°C
J
-40 to 150
-40 to 110
°C
T
Operating junction temperature range
°C
J
Electrical Characteristics — (T = 25°C, unless otherwise specified)
J
Value
Symbol
IGT
Test Conditions
Unit
Sxx04xS1
Sxx04xS2
MAX.
MAX.
TYP.
50
200
ꢀA
V
VD = 6V; RL = 100 8; RGK = 1kohm
VGT
dv/dt
VGD
VGRM
IH
0.8
8
VD = VDRM; RGK = 1kΩ
V/μs
V
VD = VDRM; RL = 3.3 k8; T = 110°C
MIN.
MIN.
MAX.
MAX.
TYP.
0.2
6
J
IGR = 10ꢀA
IT = 20mA (initial); RGK = 1kohm
(1)
V
4
3
6
4
mA
μs
μs
tq
50
tgt
IG = 2 x IGT; PW = 15ꢀs; IT = 8A
Notes :
xx = voltage, x = package
(1) IT=2A; tp=50ꢀs; dv/dt=5V/ꢀs; di/dt=-10A/ꢀs
Static Characteristics
Symbol
Test Conditions
Value
Unit
VTM
Sxx04xSy IT = 8A; tp = 380 ꢀs
MAX.
MAX.
1.6
2
V
T = 25°C
J
IDRM / IRRM
VDRM / VRRM - RGK = 1kohm
μA
T = 110°C
100
J
Note : xx or z = voltage, x = package, y = sensitivity
Thermal Resistances
Symbol
Parameter
Value
3.8
Unit
Sxx04VSy
Junction to case (AC)
Junction to ambient
°C/W
°C/W
RR(J-C)
Sxx04DSy
Sxx04VSy
3.0
85
RR(J-A)
Notes: xx = voltage, y = sensitivity
Sxx04xSx Series
©2008 Littelfuse, Inc.
210
Revised: July 9, 2008
Specifications are subject to change without notice.
Please refer to http://www.littelfuse.com for current information.
Teccor® brandThyristors
4 Amp Sensitive SCRs
Figure 1: Normalized DC GateTrigger Current
vs. JunctionTemperature
Figure 2: Normalized DC GateTriggerVoltage
vs. JunctionTemperature
4.0
3.0
2.0
1.0
0.0
2.0
1.5
1.0
0.5
0.0
-40
-15
10
35
60
85
110
110
4.0
-40
-15
10
35
60
85
110
Junction Temperature (TJ) -- (°C)
Junction Temperature (TJ) -- (°C)
Figure 3: Normalized DC Holding Current
vs. JunctionTemperature
Figure 4: Normalized DC Latching Current
vs. JunctionTemperature
3.0
2.5
2.0
1.5
1.0
0.5
0.0
3.0
2.5
2.0
1.5
1.0
0.5
0.0
-40
-15
10
35
60
85
110
-40
-15
10
35
60
85
Junction Temperature (TJ) -- (°C)
Junction Temperature (TJ) -- (°C)
Figure 5: On-State Current vs. On-State
Voltage (Typical)
Figure 6: Power Dissipation (Typical)
vs. RMS On-State Current
5.5
5.0
4.5
4.0
3.5
3.0
2.5
2.0
25
TJ = 25°C
20
15
Sxx04VSy
Sxx04DSy
10
Sxx04VSy
Sxx04DSy
1.5
1.0
0.5
0.0
5
0
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
0.7
0.8
0.9
1.0
1.1
1.2
1.3
1.4
1.5
1.6
RMS On-State Current [IT(RMS)] - (Amps)
Instantaneous On-state Voltage (v) – Volts
Note: xx or z = voltage, y = sensitivity
Sxx04xSx Series
©2008 Littelfuse, Inc.
211
Revised: July 9, 2008
Specifications are subject to change without notice.
Please refer to http://www.littelfuse.com for current information.
Teccor® brandThyristors
4 Amp Sensitive SCRs
Figure 7: Maximum Allowable CaseTemperature
vs. RMS On-State Current
Figure 8: Maximum Allowable CaseTemperature
vs. Average On-State Current
115
110
105
100
95
115
110
Sxx04VSy
Sxx04DSy
Sxx04VSy
Sxx04DSy
105
100
95
90
90
85
85
80
80
CURRENT WAVEFORM: Sinusoidal
LOAD: Resistive or Inductive
CONDUCTION ANGLE: 180°
CURRENTWAVEFORM: Sinusoidal
LOAD: Resistive or Inductive
CONDUCTION ANGLE: 180°
75
75
70
70
0.0
0.5
1.0
1.5
2.0
2.5
3.0
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
Average On-State Current [IT(AVE)] - Amps
RMS On-State Current [IT(RMS)] - Amps
Figure 9: Maximum Allowable AmbientTemperature
vs. RMS On-State Current
Figure 10: Maximum Allowable AmbientTemperature
vs. Average On-State Current
120
120
CURRENTWAVEFORM: Sinusoidal
LOAD: Resistive or Inductive
CONDUCTION ANGLE: 180°
CURRENT WAVEFORM: Sinusoidal
LOAD: Resistive or Inductive
CONDUCTION ANGLE: 180°
FREE AIR RATING
100
100
80
60
40
20
0
FREE AIR RATING
80
60
Sxx04VSy
Sxx04VSy
40
20
0
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
0.0
0.1
0.2
0.3
0.4
Average On-State Current [IT(AVE)] - Amps
RMS On-State Current [IT(RMS)] - Amps
Figure 11: Peak Repetitive Capacitor Discharge Current
Figure 12: Peak Repetitive Sinusoidal Pulse Current
180
160
180
160
140
140
1 Hz
120
120
12 Hz
1 Hz
100
100
60 Hz
80
60
40
20
0
80
12 Hz
60
ITM
ITRM
40
60 Hz
20
tW
tW
0
1
10
100
1
10
100
Pulse Current Duration (tW) - μs
Pulse Current Duration (tW) - μs
Note: xx = voltage, y = sensitivity
Sxx04xSx Series
©2008 Littelfuse, Inc.
212
Revised: July 9, 2008
Specifications are subject to change without notice.
Please refer to http://www.littelfuse.com for current information.
Teccor® brandThyristors
4 Amp Sensitive SCRs
Figure 13: Surge Peak On-State Current vs. Number of Cycles
100.0
10.0
1.0
SUPPLY FREQUENCY: 60 Hz Sinusoidal
LOAD: Resistive
RMS On-State Current: [IT(RMS)]: Maximum Rated
Value at Specified Case Temperature
Sxx04VSy
Sxx04DSy
Notes:
1. Gate control may be lost during and immediately
following surge current interval.
2. Overload may not be repeated until junction
temperature has returned to steady-state
rated value.
0.1
1
10
100
1000
Surge Current Duration -- Full Cycles
Note: xx or z - voltage, y = sensitivity
Figure 14: SimpleTest Circuit for GateTriggerVoltage and Current
Reset
Normally-closed
Pushbutton
Note: V1 — 0 V to 10 V dc meter
V
— 0 V to 1 V dc meter
IGG—T 0 mA to 1 mA dc milliammeter
R1 — 1 k potentiometer
To measure gate trigger voltage and current, raise gate
voltage (V ) until meter reading V1 drops from 6 V to 1 V.
Gate triggGeTr voltage is the reading on VGT just prior to V1
dropping. Gate trigger current IGT Can be computed from
the relationship
100
+
–
D.U.T.
V1
6VDC
IGT
IN4001
IG
R1
100
1 k
(1%)
VGT
VGT
____
IGT = IG-
Amps
1000
where IG is reading (in amperes) on meter just prior to V1
dropping
Note: IGT may turn out to be a negative quantity (trigger
current flows out from gate lead). If negative current
occurs, I value is not a valid reading. Remove 1 k resistor
and use IGGT as the more correct IGT value. This will occur on
12 ꢀA gate products.
Sxx04xSx Series
©2008 Littelfuse, Inc.
Specifications are subject to change without notice.
Please refer to http://www.littelfuse.com for current information.
213
Revised: July 9, 2008
Teccor® brandThyristors
4 Amp Sensitive SCRs
Soldering Parameters
Reflow Condition
Pb – Free assembly
tP
TP
-Temperature Min (Ts(min)
)
150°C
Ramp-up
TL
TS(max)
Pre Heat -Temperature Max (Ts(max)
-Time (min to max) (ts)
)
200°C
tL
60 – 190 secs
Ramp-down
Preheat
Average ramp up rate (LiquidusTemp)
(TL) to peak
5°C/second max
5°C/second max
TS(min)
tS
TS(max) toTL - Ramp-up Rate
-Temperature (TL) (Liquidus) 217°C
25
Reflow
time to peak temperature
-Temperature (tL)
60 – 150 seconds
260+0/-5 °C
Time
PeakTemperature (TP)
Time within 5°C of actual peak
Temperature (tp)
20 – 40 seconds
Ramp-down Rate
5°C/second max
8 minutes Max.
280°C
Time 25°C to peakTemperature (TP)
Do not exceed
Physical Specifications
Environmental Specifications
Test
Specifications and Conditions
Terminal Finish
Body Material
Lead Material
100% MatteTin-plated
MIL-STD-750, M-1040, Cond A Applied
Peak AC voltage @ 125°C for 1008 hours ,
RGK = 1kohms
AC Blocking
UL recognized epoxy meeting flammability
classification 94V-0
MIL-STD-750, M-1051,
Temperature Cycling 100 cycles; -40°C to +150°C;
Copper Alloy
15-min dwell-time
EIA / JEDEC, JESD22-A101
Temperature/
1008 hours; 320V - DC: 85°C;
Humidity
85% rel humidity
Design Considerations
MIL-STD-750, M-1031,
1008 hours; 150°C
HighTemp Storage
Careful selection of the correct device for the application’s
operating parameters and environment will go a long way
toward extending the operating life of theThyristor. Good
design practice should limit the maximum continuous
current through the main terminals to 75% of the device
rating. Other ways to ensure long life for a power discrete
semiconductor are proper heat sinking and selection of
voltage ratings for worst case conditions. Overheating,
overvoltage (including dv/dt), and surge currents are
the main killers of semiconductors. Correct mounting,
soldering, and forming of the leads also help protect
against component damage.
Low-Temp Storage
Thermal Shock
1008 hours; -40°C
MIL-STD-750, M-1056
10 cycles; 0°C to 100°C; 5-min dwelltime
at each temperature; 10 sec (max) transfer
time between temperature
EIA / JEDEC, JESD22-A102
168 hours (121°C at 2 ATMs) and
100% R/H
Autoclave
Resistance to
Solder Heat
MIL-STD-750 Method 2031
Solderability
Lead Bend
ANSI/J-STD-002, category 3, Test A
MIL-STD-750, M-2036 Cond E
Sxx04xSx Series
©2008 Littelfuse, Inc.
214
Revised: July 9, 2008
Specifications are subject to change without notice.
Please refer to http://www.littelfuse.com for current information.
Teccor® brandThyristors
4 Amp Sensitive SCRs
Dimensions —TO-251AA (V/I-Package) —V/I-PAKThrough Hole
AREA: 0.040 IN2
Inches
Millimeters
Min
TC MEASURING POINT
Dimension
Min
Max
0.050
0.245
0.375
0.213
0.265
0.033
0.093
0.095
0.184
0.023
0.044
0.023
Max
1.27
6.22
9.53
5.41
6.73
0.84
2.36
2.41
4.67
0.58
1.12
0.58
E
H
J
5.28
.208
D
A
B
C
D
E
F
G
H
I
0.040
0.235
0.350
0.205
0.255
0.027
0.087
0.085
0.176
0.018
0.038
0.018
1.02
5.97
8.89
5.21
6.48
0.69
2.21
2.16
4.47
0.46
0.97
0.46
ANODE
A
B
5.34
.210
K
C
J
ANODE
GATE
CATHODE
L
F
K
L
G
I
Dimensions —TO-252AA (D-Package) — D-PAK Surface Mount
E
D
5.28
.208
TC MEASURING POINT
ANODE
L
O
A
B
H
K
5.34
.210
J
M
N
C
GATE
F
CATHODE
AREA: 0.040 IN2
Inches
Millimeters
Min
G
Dimension
I
Min
0.040
0.235
0.106
0.205
0.255
0.027
0.087
0.085
0.176
0.018
0.038
0.018
0.000
0.021
0°
Max
0.050
0.245
0.113
0.213
0.265
0.033
0.093
0.095
0.184
0.023
0.044
0.023
0.004
0.027
5°
Max
1.27
6.22
2.87
5.41
6.73
0.84
2.36
2.41
4.67
0.58
1.12
0.58
0.10
0.69
5°
A
B
C
D
E
F
1.02
5.97
2.69
5.21
6.48
0.69
2.21
2.16
4.47
0.46
0.97
0.46
0.00
0.53
0°
Pad Layout forTO-252AA (D-Package)
6.71
.264
6.71
.264
G
H
I
1.60
.063
1.80
.071
3
.118
4.60
.181
J
K
L
M
N
O
Sxx04xSx Series
©2008 Littelfuse, Inc.
215
Revised: July 9, 2008
Specifications are subject to change without notice.
Please refer to http://www.littelfuse.com for current information.
Teccor® brandThyristors
4 Amp Sensitive SCRs
Product Selector
Voltage
Part Number
Gate Sensitivity
Type
Package
400V
600V
800V
1000V
Sxx04DS1
Sxx04DS2
Sxx04VS1
X
X
X
X
X
X
X
X
50μA
200μA
50μA
Sensitive SCR
Sensitive SCR
Sensitive SCR
Sensitive SCR
TO-252
TO-252
TO-251
TO-251
Sxx04VS2
200μA
Note: xx = Voltage
Packing Options
Part Number
Marking
Weight
Packing Mode
Tube
Base Quantity
Sxx04DSyTP
Sxx04DSy
Sxx04DSy
Sxx04VSy
0.3g
0.3g
0.4g
750
2500
750
Sxx04DSyRP
Embossed Carrier
Tube
Sxx04VSyTP
Note: xx = voltage, y = sensitivity
TO-252 Embossed Carrier Reel Pack (RP) Specs
Part Marking System
TO-252AA – (D Package)
TO-251AA – (V Package)
0.059
(1.5)
0.157
(4.0)
DIA
Gate
MT1 / Cathode
0.63
(16.0)
0.524
(13.3)
*
0.315
(8.0)
*
Cover tape
MT2 / Anode
12.99
(330.0)
0.512 (13.0)
Arbor Hole
Diameter
Part Numbering System
Dimensions
are in inches
(and millimeters).
S 6004 V S1
0.64
(16.3)
DEVICE TYPE
S: SCR
Direction of Feed
SENSITIVITY & TYPE
VOLTAGE RATING
4: 400V
6: 600V
S1: 50
A
μ
μ
S2: 200
A
PACKAGE TYPE
V: TO-251 (V/I-Pak)
D: TO-252 (D-Pak)
CURRENT RATING
04: 4A
Sxx04xSx Series
©2008 Littelfuse, Inc.
216
Specifications are subject to change without notice.
Please refer to http://www.littelfuse.com for current information.
Revised: July 9, 2008
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