SD24-01FTG [LITTELFUSE]
Trans Voltage Suppressor Diode, 450W, 24V V(RWM), Unidirectional, 1 Element, Silicon, GREEN, PLASTIC PACKAGE-2;
| 型号： | SD24-01FTG |
| 厂家： | 
LITTELFUSE |
| 描述： | Trans Voltage Suppressor Diode, 450W, 24V V(RWM), Unidirectional, 1 Element, Silicon, GREEN, PLASTIC PACKAGE-2 局域网 光电二极管 |
| 文件： | 总7页 (文件大小：999K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
TVS Diode Arrays (SPA® Diodes)
General Purpose ESD Protection - SD Series
RoHS
GREEN
Pb
SD Series 450W Discrete Unidirectional TVS Diode
Description
The Unidirectional SD series is designed for use in
electronic equipment for low speed and DC applications. It
will protect any sensitive equipment from damage due to
electrostatic discharge (ESD) and other transient events.
The SD series can safely absorb repetitive ESD strikes
at ±±3kꢀ (contact discharge, IEC 61333-4-2) without
performance degradation and safely dissipate ±3A (SD35)
of 8/23μs induced surge current (IEC61333-4-5 2nd edition)
with very low clamping voltages.
Pinout and Functional Block Diagram
Features
• ESD, IEC61333-4-2,
±±3kꢀ contact, ±±3kꢀ air
• Small SOD±2± package
fits 3835 footprints
• EFT, IEC61333-4-4, 43A
(5/53ns)
• AEC-Q131 qualified
• RoHS Compliant and
Lead Free
ꢀ
• Lightning, IEC61333-4-5,
±3A (tP=8/23μs, SD35)
• Moisture Sensitivity Level
(MSL-1)
• Low clamping voltage
• Low leakage current
Applications
ꢁ
• Switches / Buttons
• Notebooks / Desktops /
Servers
•Test Equipment /
Instrumentation
• Computer Peripherals
• Automotive Electronics
• Point-of-SaleTerminals
• Medical Equipment
Additional Information
Daꢀasꢁeeꢀ
ꢀesoꢁrꢂes
Saꢀꢁꢂes
Life Support Note:
Not Intended for Use in Life Support or Life Saving Applications
The products shown herein are not designed for use in life sustaining or life saving
applications unless otherwise expressly indicated.
© 2016 Littelfuse, Inc.
Specifications are subject to change without notice.
Revised: 10/11/16
TVS Diode Arrays (SPA® Diodes)
General Purpose ESD Protection - SD Series
Absolute Maximum Ratings
Symbol
Parameter
ꢀalue
453
Units
W
Ppk
Peak Pulse Power (tp=8/23μs)
OperatingTemperature
StorageTemperature
TOP
-43 to 125
-55 to 153
°C
TSTOR
°C
Notes:
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of
the device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
Thermal Information
Parameter
Rating
-55 to 153
153
Units
°C
StorageTemperature Range
Maximum JunctionTemperature
Maximum LeadTemperature (Soldering 23-43s)
°C
263
°C
SD05 Electrical Characteristics (TOP=25ºC)
Parameter
Symbol
ꢀRWM
Test Conditions
IR≤1μA
Min
6.3
Typ
Max
5.3
Units
ꢀ
Reverse Standoff ꢀoltage
Reverse ꢀoltage Drop
Leakage Current
ꢀR
IR=1mA
ꢀR=5ꢀ
ꢀ
μA
ꢀ
ILEAK
1.3
9.8
IPP=1A, tp=8/23µs, Fwd
IPP=13A, tP=8/23μs, Fwd
Clamp ꢀoltage1
ꢀC
1±.3
ꢀ
Dynamic Resistance2
Peak Pulse Current
RDYN
Ipp
TLP, tp=133ns, I/O to Ground
tp=8/23µs
3.22
Ω
±3.3
±53
A
IEC61333-4-2 (Contact Discharge)
IEC61333-4-2 (Air Discharge)
Reverse Bias=3ꢀ, f=1MHz
±±3
±±3
kꢀ
kꢀ
pF
ESD Withstand ꢀoltage1
Diode Capacitance1
ꢀESD
CD
SD12 Electrical Characteristics (TOP=25ºC)
Parameter
Symbol
ꢀRWM
Test Conditions
IR≤1μA
Min
Typ
Max
12.3
Units
ꢀ
Reverse Standoff ꢀoltage
Reverse ꢀoltage Drop
Leakage Current
ꢀR
IR=1mA
1±.±
ꢀ
μA
ꢀ
ILEAK
ꢀR=12ꢀ
1.3
IPP=1A, tp=8/23µs, Fwd
IPP=13A, tP=8/23μs, Fwd
18.5
22.5
Clamp ꢀoltage1
ꢀC
ꢀ
Dynamic Resistance2
Peak Pulse Current
RDYN
Ipp
TLP, tp=133ns, I/O to Ground
tp=8/23µs
3.29
Ω
A
17. 3
153
IEC61333-4-2 (Contact Discharge)
IEC61333-4-2 (Air Discharge)
Reverse Bias=3ꢀ, f=1MHz
±±3
±±3
kꢀ
kꢀ
pF
ESD Withstand ꢀoltage1
Diode Capacitance1
ꢀESD
CD-GND
© 2016 Littelfuse, Inc.
Specifications are subject to change without notice.
Revised: 10/11/16
TVS Diode Arrays (SPA® Diodes)
General Purpose ESD Protection - SD Series
SD15 Electrical Characteristics (TOP=25ºC)
Parameter
Symbol
ꢀRWM
ꢀR
Test Conditions
IR≤1μA
Min
Typ
Max
15.3
Units
ꢀ
Reverse Standoff ꢀoltage
Reverse ꢀoltage Drop
Leakage Current
IR=1mA
16.7
ꢀ
ILEAK
ꢀR=15ꢀ
1.3
μA
ꢀ
IPP=1A, tp=8/23µs, Fwd
24.3
±3.3
Clamp ꢀoltage1
ꢀC
IPP=13A, tp=8/23µs, Fwd
TLP, tp=133ns, I/O to Ground
tp=8/23µs
ꢀ
Ω
Dynamic Resistance2
Peak Pulse Current
RDYN
Ipp
3.±4
12.3
133
A
IEC61333-4-2 (Contact Discharge)
±±3
±±3
kꢀ
ESD Withstand ꢀoltage1
Diode Capacitance1
ꢀESD
IEC61333-4-2 (Air Discharge)
Reverse Bias=3ꢀ, f=1MHz
kꢀ
pF
CI/O-GND
SD24 Electrical Characteristics (TOP=25ºC)
Parameter
Symbol
ꢀRWM
ꢀR
Test Conditions
IR≤1μA
Min
Typ
Max
24.3
Units
ꢀ
Reverse Standoff ꢀoltage
Reverse ꢀoltage Drop
Leakage Current
IR=1mA
26.7
ꢀ
ILEAK
ꢀR=24ꢀ
1.3
μA
ꢀ
IPP=1A, tp=8/23µs, Fwd
±6.3
42.3
Clamp ꢀoltage1
ꢀC
IPP=5A, tp=8/23µs, Fwd
TLP, tp=133ns, I/O to Ground
tp=8/23µs
ꢀ
Ω
Dynamic Resistance2
Peak Pulse Current
RDYN
Ipp
3.49
7. 3
65
A
IEC61333-4-2 (Contact Discharge)
±±3
±±3
kꢀ
ESD Withstand ꢀoltage1
Diode Capacitance1
ꢀESD
IEC61333-4-2 (Air Discharge)
Reverse Bias=3ꢀ, f=1MHz
kꢀ
pF
CI/O-GND
SD36 Electrical Characteristics (TOP=25ºC)
Parameter
Symbol
ꢀRWM
ꢀR
Test Conditions
IR≤1μA
Min
Typ
Max
±6.3
Units
ꢀ
Reverse Standoff ꢀoltage
Reverse ꢀoltage Drop
Leakage Current
IR=1mA
43.3
ꢀ
ILEAK
ꢀR=±6ꢀ
1.3
μA
ꢀ
IPP=1A, tp=8/23µs, Fwd
52.3
62.3
Clamp ꢀoltage1
ꢀC
IPP=4A, tp=8/23µs, Fwd
TLP, tp=133ns, I/O to Ground
tp=8/23µs
ꢀ
Ω
Dynamic Resistance2
Peak Pulse Current
RDYN
Ipp
3.61
5.3
53
A
IEC61333-4-2 (Contact Discharge)
±±3
±±3
kꢀ
ESD Withstand ꢀoltage1
Diode Capacitance1
ꢀESD
IEC61333-4-2 (Air Discharge)
Reverse Bias=3ꢀ, f=1MHz
kꢀ
pF
CI/O-GND
Note:
1. Parameter is guaranteed by design and/or device characterization.
2.Transmission Line Pulse (TLP) with 133ns width and 233ps rise time.
© 2016 Littelfuse, Inc.
Specifications are subject to change without notice.
Revised: 10/11/16
TVS Diode Arrays (SPA® Diodes)
General Purpose ESD Protection - SD Series
Non-Repetitive Peak Pulse Power vs. PulseTime
Capacitance vs. Bias
10
160
140
120
1
SD05
100
80
60
0.1
0.01
SD12
40
SD15
SD24
SD36
20
0
0.1
1
10
100
1000
0
3
6
9
12 15 18 21 24 27 30 33 36
Bias Voltage (V)
Pulse Duration - t (µs)
p
8/20 µs PulseWaveform
Power Derating Curve
ꢂꢂꢀꢁ
ꢂꢀꢀꢁ
ꢊꢀꢁ
ꢉꢀꢁ
ꢈꢀꢁ
ꢇꢀꢁ
ꢆꢀꢁ
ꢅꢀꢁ
ꢄꢀꢁ
ꢃꢀꢁ
ꢂꢀꢁ
ꢀꢁ
110
100
90
80
70
60
50
40
30
20
10
0
0
25
50
75
100
125
150
ꢀꢋꢀ
ꢆꢋꢀ
ꢂꢀꢋꢀ
ꢂꢆꢋꢀ
ꢃꢀꢋꢀ
ꢃꢆꢋꢀ
ꢄꢀꢋꢀ
o
(
Ambient Temperature - T
C)
A
Time (μs)
SD05Transmission Line Pulsing(TLP) Plot
SD12Transmission Line Pulsing(TLP) Plot
22
20
18
16
14
12
10
8
22
20
18
16
14
12
10
8
6
6
4
4
2
2
0
0
0
2
4
6
8
10
12
14
0
2
4
6
8
10
12
14
16
18
20
22
TLP Voltage (V)
TLP Voltage (V)
© 2016 Littelfuse, Inc.
Specifications are subject to change without notice.
Revised: 10/11/16
TVS Diode Arrays (SPA® Diodes)
General Purpose ESD Protection - SD Series
SD15Transmission Line Pulsing(TLP) Plot
SD24Transmission Line Pulsing(TLP) Plot
22
20
18
16
14
12
10
8
22
20
18
16
14
12
10
8
6
6
4
4
2
2
0
0
0
5
10
15
20
25
30
35
40
0
2
4
6
8
10 12 14 16 18 20 22 24 26 28
TLP Voltage (V)
TLP Voltage (V)
SD36Transmission Line Pulsing(TLP) Plot
22
20
18
16
14
12
10
8
6
4
2
0
0
5
10
15
20
25
30
35
40
45
50
55
60
TLP Voltage (V)
Soldering Parameters
Reflow Condition
Pb – Free assembly
tP
TP
Critical Zone
TL to TP
-Temperature Min (Ts(min)
)
153°C
Ramp-up
TL
TS(max)
Pre Heat -Temperature Max (Ts(max)
-Time (min to max) (ts)
)
233°C
tL
63 – 183 secs
Ramp-down
Preheat
Average ramp up rate (Liquidus) Temp (TL)
to peak
±°C/second max
TS(min)
tS
TS(max) toTL - Ramp-up Rate
±°C/second max
217°C
25
-Temperature (TL) (Liquidus)
Reflow
time to peak temperature
Time
-Temperature (tL)
63 – 153 seconds
263+3/-5 °C
PeakTemperature (TP)
Time within 5°C of actual peak
Temperature (tp)
23 – 43 seconds
Ramp-down Rate
6°C/second max
8 minutes Max.
263°C
Time 25°C to peakTemperature (TP)
Do not exceed
© 2016 Littelfuse, Inc.
Specifications are subject to change without notice.
Revised: 10/11/16
TVS Diode Arrays (SPA® Diodes)
General Purpose ESD Protection - SD Series
Product Characteristics
Ordering Information
Part Number
SD35-31FTG
Package
Marking
g
Min. Order Qty.
±333
Lead Plating
MatteTin
SOD±2±
SOD±2±
SOD±2±
SOD±2±
SOD±2±
Lead Material
Copper Alloy
SD12-31FTG
SD15-31FTG
SD24-31FTG
SD±6-31FTG
g1
g2
g±
g4
±333
±333
±333
±333
Lead Coplanarity
Substrate material
3.3334 inches (3.132mm)
Silicon
Body Material
ꢀ-3 per UL 94 Molded Epoxy
Notes :
1. All dimensions are in millimeters
2. Dimensions include solder plating.
±. Dimensions are exclusive of mold flash & metal burr.
4. Blo is facing up for mold and facing down for trim/form, i.e. reverse trim/form.
5. Package surface matte finish ꢀDI 11-1±.
Part Marking System
Part Numbering System
–
SD** 01
T G
F
G= Green
ꢀ
ꢁ
TVS Diode Arrays
®
(SPA Diodes)
T= Tape & Reel
Voltage
Package
Blank: SD05-01FTG
1: SD12-01FTG
2: SD15-01FTG
3: SD24-01FTG
4: SD36-01FTG
Number of
Channels
F: SOD323
Package Dimensions -SOD323
E
SOD±2±
A2
A1
Symbol
Millimeters
Max
Inches
Min
Min
3.8
Max
3.345
3.334
3.314
3.314
3.336
3.357
3.375
3.136
3.318
A
A1
A2
b
1.14
3.13
1.34
3.±5
3.15
1.45
1.93
2.73
3.45
3.3±1
3.333
3.3±1
3.313
3.33
3.83
3.25
3.38
1.15
1.63
2.44
3.25
A
E1
c
3.33±
3.345
3.36±
3.396
3.313
D
L1
Recommended Solder Pad
E
1.79
0.49
E1
L1
1.14
2.28
2.77
Unit: mm
© 2016 Littelfuse, Inc.
Specifications are subject to change without notice.
Revised: 10/11/16
TVS Diode Arrays (SPA® Diodes)
General Purpose ESD Protection - SD Series
Embossed CarrierTape & Reel Specification — SOD323
ꢃꢁꢂꢂ
ꢀꢁꢂꢂ
ꢀꢁꢂꢃ
ꢆꢇꢁꢈꢂ
ꢁꢄꢅꢆ
ꢆꢋꢋꢋ
ꢄꢈꢋꢋ
ꢄꢋꢋꢋ
ꢁꢈꢋꢋ
ꢁꢋꢋꢋ
ꢈꢋꢋ
ꢅ
ꢄ
ꢄ
ꢁꢄꢅꢆ
ꢀꢁꢂꢂ
ꢅ
ꢇꢅꢈ
ꢇꢁꢃꢈ
ꢌꢍꢎꢏꢐꢑꢒꢓꢏ
ꢇꢁꢀꢖ
ꢄꢕꢄ
ꢅꢕꢅ
© 2016 Littelfuse, Inc.
Specifications are subject to change without notice.
Revised: 10/11/16
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