SGT10B10 [LITTELFUSE]
Analog Circuit;
| 型号： | SGT10B10 |
| 厂家： | 
LITTELFUSE |
| 描述： | Analog Circuit |
| 文件： | 总4页 (文件大小：98K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
SGT27S10, SGT27S23
Data Sheet
July 1999
File Number 1691.3
Gate Controlled Unidirectional Transient
Surge Suppressors (TO-202 Surgector)
Features
• Blocking Voltage 100V and 270V
Surgector transient surge protectors are designed to protect
telecommunication equipment, data links, alarm systems,
power supplies, and other sensitive electrical circuits from
damage that could be caused by switching transients,
lightning strikes, load changes, commutation spikes, and line
crosses.
• Peak Transient Surge Current
• High Minimum Holding Current, 100mA or 270mA
• Low On-State Voltage
[ /Title
(SGT2
7S10,
SGT27
S23)
• UL Recognized File # E135010 to STD 497B
These devices are fast turn-on, high holding current
thyristors. When coupled with a user supplied voltage level
detector, they provide excellent voltage limiting even on very
fast rise time transients. The high holding current allows this
surgector to return to its high impedance off state after a
transient.
Applications
• Telecommunications Equipment
• Data and Voice Lines
• Modems
/Sub-
ject
(Gate
Con-
trolled
Unidi-
rec-
• Alarm Systems
The surgector device’s normal off-state condition in the
forward blocking mode is a high impedance, low leakage
state that prevents loading of the line.
Packaging
MODIFIED TO-202
tional
Tran-
sient
Surge
Sup-
Equivalent Schematic Symbols
GATE
ANODE
+
+
A
+
A
K
A
CATHODE
ANODE
G
pres-
sors)
G
G
K
-
-
-
K
/Autho
r ()
/Key-
words
(Surge
ctor,
TVS,
Tran-
sient
Sup-
pres-
sion,
Protec-
tion,
1-800-999-9445 or 1-847-824-1188 | Copyright © Littelfuse, Inc. 1999
7-19
SGT27S10, SGT27S23
o
Absolute Maximum Ratings T = 25 C
C
SGT27S10
SGT27S23
UNITS
Continuous Off State Voltage:
V
V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
270
1
V
V
DM
RM
Transient Peak Surge Current: . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
TSM
1µs x 2µs (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
8µs x 20µs . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
10µs x 560µs . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
10µs x 1000µs . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
One Half Cycle, 1 every 30s. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .50Hz to 60Hz
One Second, Halfwave. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .50Hz to 60Hz
300
200
125
100
60
A
A
A
A
A
A
30
o
Operating Temperature (T ) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
-40 to 85
C
A
o
Storage Temperature Range (T
NOTE:
). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
-40 to 150
C
STG
1. Unit designed not to fail open below 450A.
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
o
Electrical Specifications At Case Temperature, T = 25 C, Unless Otherwise Specified
C
SGT27S23
TYP
SGT27S10
TYP
TEST
CONDITIONS
PARAMETER
Off-State Current
SYMBOL
MIN
MAX
MIN
MAX
UNITS
I
V
V
= 270V
DM
DM
o
T
T
= 25 C
-
-
-
-
-
-
-
-
-
-
100
50
nA
µA
A
A
o
= 85 C
Off-State Current
Breakover Voltage
I
= 1V
= 25 C
= 85 C
RM
RM
o
o
T
T
-
-
-
-
1
10
-
-
-
-
1
10
mA
mA
A
A
V
dv/dt = 100V/µs
-
-
285
-
-
285
V
BO
(Note 2)
Holding Current
I
230
-
-
-
-
2
100
-
-
-
-
2
mA
V
H
On-State Voltage
Gate-Trigger Current
V
I
= 10A
T
-
-
-
-
T
I
175
150
mA
GT
Main Terminal
Capacitance
C
V
V
= 0V
= 50V at 1MHz
-
-
90
50
-
-
-
-
90
50
-
-
pF
pF
O
DM
DM
NOTE:
2. External Zener diode from anode to gate: 270V (SGT27S10).
7-20
SGT27S10, SGT27S23
Performance Curves
A
V
T
1.4
1.3
1.2
1.1
1.0
V
= 30V
D
I
T
I
H
V
BO
0.9
0.8
0.7
0.6
mA
V
Z
I
DM
-40 -30 -20 -10
0
10 20 30 40 50 60 70 80 90
o
V
V
DM
AMBIENT TEMPERATURE ( C)
FIGURE 1. TYPICAL VOLT-AMPERE CHARACTERISTICS
FIGURE 2. NORMALIZED GATE-TRIGGER CURRENT vs
TEMPERATURE
1.50
1.5
EXTERNAL ZENER DIODE FROM ANODE TO GATE
270V (SGT27S10)
1.4
1.3
1.2
1.1
1.0
0.9
0.8
0.7
0.6
I
(INITIAL) = 2A
T
1.25
1.00
0.75
0.50
10
100
1,000
10,000
-40 -30 -20 -10
0
10 20 30 40 50 60 70 80 90
o
RATE OF RISE OF VOLTAGE (V/µs)
AMBIENT TEMPERATURE ( C)
FIGURE 3. NORMALIZED HOLDING CURRENT vs
TEMPERATURE
FIGURE 4. NORMALIZED V
vs dv/dt
BO
Terms and Symbols
V
(Maximum Off-State Voltage) - Maximum off-state
I
(Reverse Current) - Maximum value of reverse current
DM
voltage (DC or peak) which may be applied continuously.
RM
that results from the application of the maximum reverse
voltage (V ).
RM
(Holding Current) - Minimum on-state current that will
V
(Maximum Reverse Voltage) - Maximum reverse-
RM
blocking voltage (DC or peak) which may be applied.
I
H
hold the device in the on-state after it has been latched on.
I
(Maximum Peak Surge Current) - Maximum
TSM
nonrepetitive current which may be allowed to flow for the
time state.
V (On-State Voltage) - Voltage across the main terminals
for a specified on-state current.
T
T
(Ambient Operating Temperature) - Ambient
I
(Gate-Trigger Current) - Minimum gate current which
A
GT
temperature range permitted during operation in a circuit.
will cause the device to switch from the off-state to the on-
state.
T
(Storage Temperature) - Temperature range
STG
permitted during storage.
C
(Main Terminal Capacitance) - Capacitance between
O
the main terminals at a specified off-state voltage.
I
(Off-State Current) - Maximum value of off-state
DM
current that results from the application of the maximum off-
state voltage (V ).
DM
7-21
SGT27S10, SGT27S23
TO-202 Modified
Mechanical Dimensions
2 LEAD JEDEC STYLE TO-202 SHORT TAB PLASTIC PACKAGE
INCHES MILLIMETERS
MIN
ACTIVE ELEMENT
b2
A
SYMBOL
MAX
0.150
0.028
0.055
0.280
0.022
0.340
0.360
MIN
3.31
0.61
1.15
6.86
0.46
8.13
8.64
MAX
3.81
0.71
1.39
7.11
0.55
8.63
9.14
NOTES
A
b
0.130
0.024
0.045
0.270
0.018
0.320
0.340
-
H
1
2, 3
D
b
b
1, 2, 3
1
2
-
c
1, 2, 3
L
b1
1
D
E
-
-
L
e
0.200 BSC
5.08 BSC
4
-
1
b
H
0.080
0.039
0.410
0.080
0.100
0.049
0.440
0.100
2.04
1.00
2.54
1.24
1
c
J
5
-
1
1
2
L
10.42
2.04
11.17
2.54
J
1
L
1
e1
1
NOTES:
o
45
1. Lead dimension and finish uncontrolled in L .
1
2. Lead dimension (without solder).
3. Add typically 0.002 inches (0.05mm) for solder coating.
4. Position of lead to be measured 0.250 inches (6.35mm) from bottom
of dimension D.
E
5. Position of lead to be measured 0.100 inches (2.54mm) from bottom
of dimension D.
6. Controlling dimension: Inch.
7. Revision 3 dated 10-94.
Ordering Information
SGT 10
S
10
Holding Current in mA divided by 10
Type of Surgector
U: Unidirectional
B: Bidirectional
S: SCR
Off-State Voltage Rating Divided by 10
Surgector
7-22
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