SLVU2.8HTG [LITTELFUSE]
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| 型号： | SLVU2.8HTG |
| 厂家： | 
LITTELFUSE |
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| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
™
TVS Diode Arrays (SPA Family of Products)
Lightning Surge Protection - SLVU2.8 Series
RoHS
GREEN
Pb
SLVU2.8 Series 2.8V 40A TVS Array
Description
The SLVU2.8 series was designed to protect low voltage,
CMOS devices from ESD and lightning induced transients.
There is a compensating diode in parallel with the low
voltageTVS to protect one unidirectional line or a high
speed data pair when two devices are paired together.
These robust structures can safely absorb repetitive ESD
strikes at ±±3kV ꢀcontact discharge) per the IEC61333-4-2
standard and each structure can safely dissipate up to 43A
ꢀIEC61333-4-5, tP=8/23μs) with very low clamping voltages.
Features
•ꢀ ESD,ꢀIEC61000-4-2,ꢀ
±±3kV contact, ±±3kV air
•ꢀ Lowꢀcapacitanceꢀofꢀ2pFꢀ
per line ꢀPin 2 to 1)
Pinout
•ꢀ EFT,ꢀIEC61000-4-4,ꢀ40Aꢀ
•ꢀ Lowꢀleakageꢀcurrentꢀofꢀ
3
ꢀ5/53ns)
1μA ꢀMAX) at 2.8V
•ꢀ Lightning,ꢀIEC61000-4-5,ꢀ
•ꢀ SmallꢀSOT23-3ꢀ(JEDECꢀ
43A ꢀ8/23μs)
TO-2±6) package saves
Applications
•ꢀ 10/100/1000ꢀEthernet
•ꢀ WAN/LANꢀEquipment
•ꢀ SwitchingꢀSystems
•ꢀ AnalogꢀInputs
•ꢀ BaseꢀStations
2
1
Functional Block Diagram
•ꢀ Desktops,ꢀServers,ꢀandꢀ
Notebooks
3
Application Example
NC
RJ-45
Connector
1
2
J1
Ethernet
PHY
J8
NC
See Application Example Detail section on page 1±5 for more information
SLVU2.8 Series
©2012 Littelfuse, Inc.
Specifications are subject to change without notice.
Please refer to www.littelfuse.com/SPA for current information.
1
Revision: February 15, 2012
™
TVS Diode Arrays (SPA Family of Products)
Lightning Surge Protection - SLVU2.8 Series
Electrical Characteristics (TOP = 25°C)
Parameter
Symbol
Test Conditions
Min
Typ
Max
Units
Reverse Standoff Voltage
VRWM
IR≤1μA
2.8
V
ReverseꢀBreakdownꢀVoltage
SnapꢀBackꢀVoltage
VBR
VSB
IT=2μA
±.3
2.8
V
V
IT=53mA
Reverse Leakage Current
Clamping Voltage1
ILEAK
VR=2.8V ꢀPin 2 or ± to 1)
IPP=5A, tP=8/23μs ꢀPin ± to 1)
IPP=24A, tP=8/23μs ꢀPin ± to 1)
IPP=5A, tP=8/23μs ꢀPin 2 to 1)
IPP=24A, tP=8/23μs ꢀPin 2 to 1)
ꢀVC2 - VC1) / ꢀIPP2 - IPP1) ꢀPin 2 to 1)
1
μA
V
5.7
8.±
7. 3
7. 3
Clamping Voltage1
12.5
8.5
15.3
V
VC
Clamping Voltage1
V
Clamping Voltage1
1±.9
3.4
V
Dynamic Resistance
RDYN
VESD
CD
Ω
IEC61333-4-2 ꢀContact)
IEC61333-4-2 ꢀAir)
±±3
±±3
kV
kV
pF
ESDꢀWithstandꢀVoltage1
Diode Capacitance1
2.3
2.5
VR=3V, f=1MHz ꢀPin 2 to 1)
Note:ꢀ1Parameter is guaranteed by design and/or device characterization.
Absolute Maximum Ratings
Figure 1: Capacitance vs. ReverseVoltage
Parameter
Rating
633
Units
W
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
Peak Pulse Power ꢀtP=8/23µs)
Peak Pulse Current ꢀtP=8/23µs)
OperatingTemperature
43
A
-43 to 85
-63 to 153
ºC
StorageTemperature
ºC
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause
permanent damage to the device. This is a stress only rating and operation of the device
at these or any other conditions above those indicated in the operational sections of this
specification is not implied.
0.0
0.5
1.0
1.5
2.0
2.5
DC Bias (V)
Figure 3: PulseWaveform
Figure 2: ClampingVoltage vs. IPP
14
12
10
8
110%
100%
90%
80%
70%
60%
50%
40%
30%
20%
10%
0%
6
4
2
0
0.0
5.0
10.0
15.0
20.0
25.0
30.0
0
5
10
15
20
25
Peak Pulse Current-IPP (A)
Time (μs)
SLVU2.8 Series
©2012 Littelfuse, Inc.
Specifications are subject to change without notice.
Please refer to www.littelfuse.com/SPA for current information.
2
Revision: February 15, 2012
™
TVS Diode Arrays (SPA Family of Products)
Lightning Surge Protection - SLVU2.8 Series
Application Example Detail
Product Characteristics
Lead Plating
Data Line
MatteTin
Lead Material
Copper Alloy
3.3334 inches ꢀ3.132mm)
Silicon
Lead Coplanarity
Substitute Material
Body Material
Protection of one unidirectional line
Protection of one unidirectional data line is realized by
connecting pin ± to the protected line, and pins 1 and 2 to
GND.ꢀꢀInꢀthisꢀconfiguration,ꢀtheꢀdeviceꢀpresentsꢀaꢀmaximumꢀ
loading capacitance of tens of picofarads. During positive
transients, the internalTVS diode will conduct and steer
currentꢀfromꢀpinꢀ3ꢀtoꢀ1ꢀ(GND),ꢀclampingꢀtheꢀdataꢀlineꢀatꢀorꢀ
below the specified voltages for the device ꢀsee Electrical
Characteristicsꢀsection).ꢀForꢀnegativeꢀtransients,ꢀtheꢀinternalꢀ
compensating diode is forward biased, steering the current
fromꢀpinꢀ2ꢀ(GND)ꢀtoꢀ3.ꢀ
Molded Epoxy
UL 94 V-3
Flammability
Notesꢀ:ꢀ
1. All dimensions are in millimeters
2. Dimensions include solder plating.
±. Dimensions are exclusive of mold flash & metal burr.
4.ꢀꢀBloꢀisꢀfacingꢀupꢀforꢀmoldꢀandꢀfacingꢀdownꢀforꢀtrim/form,ꢀi.e.ꢀreverseꢀtrim/form.
5. Package surface matte finish VDI 11-1±.
Soldering Parameters
D1
Reflow Condition
-Temperature Min (Ts(min)
Pbꢀ–ꢀFreeꢀassembly
NC
)
153°C
Pre Heat -Temperature Max (Ts(max)
)
233°C
D2
-Time (min to max) (ts)
63 – 183 secs
Low capacitance protection of one high speed data pair
Average ramp up rate (Liquidus) Temp
(TL) to peak
±°C/second max
Low capacitance protection of a high-speed data pair is
realized by connecting two devices in antiparallel. As shown,
pin 1 of the first device is connected to D1 and pin 2 is
connected to D2. Additionally, pin 2 of the second device is
connected to D1 and pin 1 is connected to D2. Pin ± must be
NCꢀ(orꢀnotꢀconnected)ꢀforꢀbothꢀdevices.ꢀWhenꢀtheꢀpotentialꢀ
on D1 exceeds the potential on D2 ꢀby the rated standoff
voltage), pin 2 on the second device will steer current into
pin 1. The compensating diode will conduct in the forward
direction steering current into the avalanchingTVS diode
whichꢀisꢀoperatingꢀinꢀtheꢀreverseꢀdirection.ꢀForꢀtheꢀoppositeꢀ
transient, the first device will behave in the same manner. In
this two device arrangement, the total loading capacitance is
two times the rated capacitance from pin 2 to pin 1 which will
typicallyꢀbeꢀmuchꢀlessꢀthanꢀ10pFꢀmakingꢀitꢀsuitableꢀforꢀhigh-
speed data pair such as 13/133/1333 Ethernet.
TS(max) toTL - Ramp-up Rate
±°C/second max
217°C
-Temperature (TL) (Liquidus)
Reflow
-Temperature (tL)
63 – 153 seconds
263+3/-5 °C
PeakTemperature (TP)
Time within 5°C of actual peak
Temperature (tp)
23 – 43 seconds
Ramp-down Rate
6°C/second max
8 minutes Max.
263°C
Time 25°C to peakTemperature (TP)
Do not exceed
tP
TP
Critical Zone
TL to TP
Ramp-up
TL
TS(max)
NC
tL
RJ-45
Connector
Ramp-down
J1
Preheat
TS(min)
tS
Ethernet
PHY
25
time to peak temperature
Time
J8
NC
SLVU2.8 Series
©2012 Littelfuse, Inc.
Specifications are subject to change without notice.
Please refer to www.littelfuse.com/SPA for current information.
3
Revision: February 15, 2012
™
TVS Diode Arrays (SPA Family of Products)
Lightning Surge Protection - SLVU2.8 Series
Package Dimensions — SOT-23
Package
Pins
SOT23-3
b
3
3
JEDEC
TO-236
E
E1
Millimetres
Inches
Min
Max
1.12
3.1
Min
Max
3.344
3.334
3.323
3.338
3.123
3.134
3.355
2
1
A
A1
b
3.89
3.31
3.±
3.3±5
Recommended Pad Layout
e
3.3334
3.312
3.33±
3.113
e1
D
3.5
c
3.38
2.8
3.2
M
D
±.34
2.64
1.4
A
P
E
2.1
3.38±
3.347
E1
e
1.2
A1
0.95ꢀBSC
1.90ꢀBSC
0.54ꢀREF
0.038ꢀBSC
0.075ꢀBSC
0.021ꢀREF
C
e1
L1
M
N
O
P
N
O
L1
2.29
3.95
3.78
.93
3.3±8
3.±3TYP
3.±3TYP
3.78
Part Marking System
Part Numbering System
U 2.8
SLVU2.8 HT G
Voltage Level
Product Series
U2.8
G= Green
U = SLVU2.8
T= Tape & Reel
Ordering Information
Package
Series
H = SOT23-3
Part Number
Package
SOT2±-±
Marking
Min. Order Qty.
SLVU2.8HTG
U2.8
±333
Embossed CarrierTape & Reel Specification — SOT23-3 Package
P0
P1
D1
Millimetres
Inches
Symbol
E
D
Min
±.35
2.67
±.9
Max
±.25
2.87
4.1
Min
3.12
Max
3.128
3.11±
3.161
3.792
3.37±
3.14
A0
B0
D
3.135
3.15±
3.788
3.365
3.1±6
3.476
3.3±7
3.15±
F
D1
E
1.95
1.65
±.45
1.12
3.95
±.9
2.35
1.85
±.55
1.±2
1.35
4.1
W
2.06
[.081]
.71
P
F
.229 .0
13
.99
[.009 .0
005]
K0
P
3.484
3.341
3.161
3.36±
3.±27
[.028]
[.039]
.46
[.01
8]
8º MAX
13.5º MAX
9º MAX
P0
P1
W
1.6
A0
B0
K0
7. 9
8.±
3.±11
SLVU2.8 Series
©2012 Littelfuse, Inc.
Specifications are subject to change without notice.
Please refer to www.littelfuse.com/SPA for current information.
4
Revision: February 15, 2012
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