SM05-02HTG [LITTELFUSE]
Trans Voltage Suppressor Diode, 400W, 24V V(RWM), Unidirectional, 2 Element, Silicon, TO-236AB, TO-236, 3 PIN;
| 型号： | SM05-02HTG |
| 厂家： | 
LITTELFUSE |
| 描述： | Trans Voltage Suppressor Diode, 400W, 24V V(RWM), Unidirectional, 2 Element, Silicon, TO-236AB, TO-236, 3 PIN 局域网 光电二极管 |
| 文件： | 总6页 (文件大小：1019K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
TVS Diode Arrays (SPA® Diodes)
General Purpose ESD Protection - SM05 through SM36
RoHS
GREEN
Pb
SM Series 400W TVS Diode Array
Description
The SM seriesTVS Diode Array is designed to protect
sensitive equipment from damage due to electrostatic
discharge (ESD), electrical fast transients (EFT), and
lightning induced surges.
The SM series can absorb repetitive ESD strikes above the
maximum level specified in the IEC 61000-4-2 international
standard without performance degradation and safely
dissipate up to 24A of 8/20µs induced surge current (IEC-
61000-4-5, 2nd Edition) with very low clamping voltages.
Pinout and Functional Block Diagram
Features
• RoHS compliant and
lead-free
• Working voltages: 5V,
12V, 15V, 24V and ±6V
(AEC-Q101 qualified)
• ESD, IEC 61000-4-2,
±±0kV contact, ±±0kV air
• Low clamping voltage
• Low leakage current
• EFT, IEC 61000-4-4, 50A
(5/50ns)
• AEC-Q101 qualified
(SOT2±-± package)
ꢀ
• Lightning, IEC 61000-
4-5, 2nd Edition, 24A
(tP=8/20μs, SM05)
• Moisture Sensitivity Level
(MSL-1)
ꢂ
ꢁ
Applications
• Industrial Equipment
• Legacy Ports
• Test and Medical
Equipment
(RS-2±2, RS-485)
• Security and Alarm
System
• Point-of-SaleTerminals
• Motor Controls
Life Support Note:
Not Intended for Use in Life Support or Life Saving Applications
• Automotive Electronics
The products shown herein are not designed for use in life sustaining or life saving
applications unless otherwise expressly indicated.
Additional Information
RS-232 Application Example
RS-232 Port
Transceiver
RD
TD
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ꢀesoꢁrꢂes
Saꢀꢁꢂes
RTS
CTS
DSR
DTR
IC
SM15 (x6)
(bidirecꢀonal implementaꢀon)
Case GND
© 2016 Littelfuse, Inc.
Specifications are subject to change without notice.
5
Revised: 01/23/18
TVS Diode Arrays (SPA® Diodes)
General Purpose ESD Protection - SM05 through SM36
Absolute Maximum Ratings
Symbol
PPk
Parameter
Value
Units
W
400
Peak Pulse Power (tp=8/20μs)
OperatingTemperature
StorageTemperature
TOP
-40 to 125
-55 to 150
°C
TSTOR
°C
Notes:
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the component. This is a stress only rating and
operation of the component at these or any other conditions above those indicated in the operational sections of this specification is not implied.
SM05 Electrical Characteristics (TOP=25ºC)
Parameter
Symbol
VRWM
VR
Test Conditions
Min
Typ
Max
Units
Reverse Standoff Voltage
Reverse Voltage Drop
Leakage Current
IR≤1μA
5.0
V
V
IR=1mA
VR=5V
6.0
ILEAK
1.0
9.8
μA
V
IPP=1A, tp=8/20µs, Pin 1 or Pin 2 to Pin ±
Clamp Voltage1
VC
IPP=10A, tp=8/20µs, Pin 1 or Pin 2 to Pin ±
TLP, tp=100ns, I/O to GND
1±.0
V
Dynamic Resistance2
RDYN
Ipp
0.19
Ω
Peak Pulse Current
(8/20µs)1
tp=8/20µs
24.0
A
IEC 61000-4-2 (Contact Discharge)
±±0
±±0
kV
ESD Withstand Voltage1
Diode Capacitance1
VESD
IEC 61000-4-2 (Air Discharge)
Reverse Bias=0V, f=1MHz
Reverse Bias=0V, f=1MHz
kV
pF
pF
CI/O-GND
CI/O-I/O
400
±50
SM12 Electrical Characteristics (TOP=25ºC)
Parameter
Symbol
VRWM
VR
Test Conditions
Min
Typ
Max
Units
Reverse Standoff Voltage
Reverse Voltage Drop
Leakage Current
IR≤1μA
12.0
V
V
IR=1mA
VR=12V
1±.±
ILEAK
1.0
μA
V
IPP=1A, tp=8/20µs, Pin 1 or Pin 2 to Pin ±
18.5
22.5
Clamp Voltage1
VC
IPP=10A, tp=8/20µs, Pin 1 or Pin 2 to Pin ±
TLP, tp=100ns, I/O to GND
V
Dynamic Resistance2
RDYN
Ipp
0.25
Ω
Peak Pulse Current
(8/20µs)1
tp=8/20µs
17. 0
A
IEC 61000-4-2 (Contact Discharge)
±±0
±±0
kV
ESD Withstand Voltage1
Diode Capacitance1
VESD
IEC 61000-4-2 (Air Discharge)
Reverse Bias=0V, f=1MHz
Reverse Bias=0V, f=1MHz
kV
pF
pF
CI/O-GND
CI/O-I/O
150
120
© 2018 Littelfuse, Inc.
Specifications are subject to change without notice.
6
Revised: 01/23/18
TVS Diode Arrays (SPA® Diodes)
General Purpose ESD Protection - SM05 through SM36
SM15 Electrical Characteristics (TOP=25ºC)
Parameter
Symbol
VRWM
VR
Test Conditions
Min
Typ
Max
Units
Reverse Standoff Voltage
Reverse Voltage Drop
Leakage Current
IR≤1μA
15.0
V
V
IR=1mA
VR=15V
16.7
ILEAK
1.0
μA
V
IPP=1A, tp=8/20µs, Pin 1 or Pin 2 to Pin ±
24.0
±0.0
Clamp Voltage1
VC
IPP=10A, tp=8/20µs, Pin 1 or Pin 2 to Pin ±
TLP, tp=100ns, I/O to GND
V
Dynamic Resistance2
RDYN
Ipp
0.±0
Ω
Peak Pulse Current
(8/20µs)1
tp=8/20µs
12.0
A
IEC 61000-4-2 (Contact Discharge)
±±0
±±0
kV
ESD Withstand Voltage1
Diode Capacitance1
VESD
IEC 61000-4-2 (Air Discharge)
Reverse Bias=0V, f=1MHz
Reverse Bias=0V, f=1MHz
kV
pF
pF
CI/O-GND
CI/O-I/O
100
75
SM24 Electrical Characteristics (TOP=25ºC)
Parameter
Symbol
VRWM
VR
Test Conditions
Min
Typ
Max
Units
Reverse Standoff Voltage
Reverse Voltage Drop
Leakage Current
IR≤1μA
24.0
V
V
IR=1mA
VR=24V
26.7
ILEAK
1.0
μA
V
IPP=1A, tp=8/20µs, Pin 1 or Pin 2 to Pin ±
±6.0
42.0
Clamp Voltage1
VC
IPP=5A, tp=8/20µs, Pin 1 or Pin 2 to Pin ±
TLP, tp=100ns, I/O to GND
V
Dynamic Resistance2
RDYN
Ipp
0.50
Ω
Peak Pulse Current
(8/20µs)1
tp=8/20µs
7. 0
A
IEC 61000-4-2 (Contact Discharge)
±±0
±±0
kV
ESD Withstand Voltage1
Diode Capacitance1
VESD
IEC 61000-4-2 (Air Discharge)
Reverse Bias=0V, f=1MHz
Reverse Bias=0V, f=1MHz
kV
pF
pF
CI/O-GND
CI/O-I/O
65
50
SM36 Electrical Characteristics (TOP=25ºC)
Parameter
Symbol
VRWM
VR
Test Conditions
Min
Typ
Max
Units
Reverse Standoff Voltage
Reverse Voltage Drop
Leakage Current
IR≤1μA
±6.0
V
V
IR=1mA
VR=±6V
40.0
ILEAK
1.0
μA
V
IPP=1A, tp=8/20µs, Pin 1 or Pin 2 to Pin ±
52.0
62.0
Clamp Voltage1
VC
IPP=4A, tp=8/20µs, Pin 1 or Pin 2 to Pin ±
TLP, tp=100ns, I/O to GND
V
Dynamic Resistance2
RDYN
Ipp
0.65
Ω
Peak Pulse Current
(8/20µs)1
tp=8/20µs
5.0
A
IEC 61000-4-2 (Contact Discharge)
±±0
±±0
kV
ESD Withstand Voltage1
Diode Capacitance1
VESD
IEC 61000-4-2 (Air Discharge)
Reverse Bias=0V, f=1MHz
Reverse Bias=0V, f=1MHz
kV
pF
pF
CI/O-GND
CI/O-I/O
50
40
Note:
1
Parameter is guaranteed by design and/or component characterization.
Transmission Line Pulse (TLP) with 100ns width and 200ps rise time.
2
© 2016 Littelfuse, Inc.
Specifications are subject to change without notice.
7
Revised: 01/23/18
TVS Diode Arrays (SPA® Diodes)
General Purpose ESD Protection - SM05 through SM36
Non-Repetitive Peak Pulse Power vs. PulseTime
Power Derating Curve
110
100
90
80
70
60
50
40
30
20
10
0
10
1
0.1
0.01
0
25
50
75
100
125
150
0.1
1
10
100
1000
o
(
Pulse Duration - t (µs)
p
Ambient Temperature - T
C)
A
PulseWaveform
SM05Transmission Line Pulsing(TLP) Plot
SM05
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ꢈꢀꢁ
ꢇꢀꢁ
ꢆꢀꢁ
ꢅꢀꢁ
ꢄꢀꢁ
ꢃꢀꢁ
ꢂꢀꢁ
ꢀꢁ
20
18
16
14
12
10
8
6
4
2
0
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ꢃꢀꢋꢀ
ꢃꢆꢋꢀ
ꢄꢀꢋꢀ
0
2
4
6
8
10
12
Time (μs)
TLP Voltage (V)
SM12Transmission Line Pulsing(TLP) Plot
SM15Transmission Line Pulsing(TLP) Plot
SM12
SM15
20
20
18
16
14
12
10
8
18
16
14
12
10
8
6
6
4
4
2
2
0
0
0
5
10
15
20
25
0
5
10
15
20
25
30
TLP Voltage (V)
TLP Voltage (V)
© 2018 Littelfuse, Inc.
Specifications are subject to change without notice.
8
Revised: 01/23/18
TVS Diode Arrays (SPA® Diodes)
General Purpose ESD Protection - SM05 through SM36
SM24Transmission Line Pulsing(TLP) Plot
SM36Transmission Line Pulsing(TLP) Plot
SM36
SM24
20
20
18
16
14
12
10
8
18
16
14
12
10
8
6
6
4
4
2
2
0
0
0
5
10
15
20
25
30
35
40
0
5
10
15
20
25
30
35
40
45
50
55
TLP Voltage (V)
TLP Voltage (V)
Soldering Parameters
Reflow Condition
Pb – Free assembly
tP
TP
Critical Zone
TL to TP
-Temperature Min (Ts(min)
)
150°C
Ramp-up
TL
TS(max)
Pre Heat -Temperature Max (Ts(max)
)
200°C
tL
-Time (min to max) (ts)
60 – 180 secs
Ramp-down
Preheat
Average ramp up rate (Liquidus) Temp
(TL) to peak
±°C/second max
TS(min)
tS
TS(max) toTL - Ramp-up Rate
±°C/second max
217°C
25
-Temperature (TL) (Liquidus)
Reflow
time to peak temperature
Time
-Temperature (tL)
60 – 150 seconds
260+0/-5 °C
PeakTemperature (TP)
Time within 5°C of actual peak
Temperature (tp)
20 – 40 seconds
Ramp-down Rate
6°C/second max
8 minutes Max.
260°C
Time 25°C to peakTemperature (TP)
Do not exceed
Ordering Information
Part Number
Package
Marking Min. Order Qty.
SM05-02HTG
SOT2±-±
M05
M12
M15
M24
M±6
±000
±000
±000
±000
±000
SM12-02HTG
SM15-02HTG
SM24-02HTG
SM±6-02HTG
SOT2±-±
SOT2±-±
SOT2±-±
SOT2±-±
© 2016 Littelfuse, Inc.
Specifications are subject to change without notice.
9
Revised: 01/23/18
TVS Diode Arrays (SPA® Diodes)
General Purpose ESD Protection - SM05 through SM36
Part Marking System
Part Numbering System
–
xx
02 T G
SM
H
TVS Diode Arrays
G= Green
®
(SPA Diodes)
Series
T= Tape & Reel
Working
Voltage
Package
H: SOT23-3
ꢀꢁꢁ
Number of
Channels
Package Dimensions — SOT23-3
Package
Pins
JEDEC
SOT23-3
b
3
3
TO-236
Millimeters
Inches
E
E1
Min
Max
Min
0.0±5
Max
0.044
0.004
0.020
0.008
0.120
0.104
0.055
Recommended Pad Layout
A
A1
b
c
D
E
E1
e
e1
L1
M
N
O
P
0.89
0.01
0.±
1.12
0.1
0.5
1
2
0.0004
0.012
0.00±
0.110
0.08±
0.047
e
e1
D
0.08
2.8
2.1
0.2
±.04
2.64
1.4
M
P
A
1.2
0.95 BSC
1.90 BSC
0.54 REF
0.0±8 BSC
0.075 BSC
0.021 REF
A1
L1
C
2.29
0.95
0.78
0.78
.090
0.0±8
N
0
.0±0TYP
.0±0TYP
Embossed CarrierTape & Reel Specification — SOT23-3
Millimetres
Min
Inches
Symbol
Max
1.85
±.60
2.10
1.60
4.10
8.±0
4.10
±.25
2.87
1.±2
0.24
Min
Max
0.07±
0.142
0.08±
0.06±
0.161
0.±27
0.161
0.128
0.11±
0.052
0.009
E
F
1.65
±.40
1.90
1.40
±.90
7.70
±.90
±.05
2.67
1.12
0.22
0.065
0.1±4
0.075
0.055
0.154
0.±0±
0.154
0.120
0.105
0.044
0.009
P2
D
P0
W
P
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GENERAL INFORMATION
1. 3000 PIECES PER REEL.
2. ORDER IN MULTIPLES OF FULL REELS ONLY.
3. MEETS EIA-481 REVISION "A" SPECIFICATIONS.
ACCESS HOLE
A0
B0
K0
t
SOT23-3 (8mm POCKET PITCH)
14.4mm
13mm
60mm
180mm
USER DIRECTION OF FEED
PIN 1
8.4mm
© 2018 Littelfuse, Inc.
Specifications are subject to change without notice.
10
Revised: 01/23/18
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