T10BL200T [LITTELFUSE]
Silicon Surge Protector, 265V V(BO) Max, 50A,;
| 型号： | T10BL200T |
| 厂家： | 
LITTELFUSE |
| 描述： | Silicon Surge Protector, 265V V(BO) Max, 50A, |
| 文件： | 总1页 (文件大小：75K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
T10B series Sibod™
FEATURES
Ø1.016 0.050
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Glass passivated junction
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UL recognized
High current diverting capability 250A
Low capacitance, less than 200pF
Automatic reset
Does not degrade
APPLICATION
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Bi-directional device for telephone and line card protection
25.4 min
ELECTRICAL CHARACTERISTICS (Tamb = +25°C)
+0.127
Ø5.080
-0.254
SYMBOL
VRM
PARAMETER
Stand-off Voltage
Breakdown Voltage
Holding Current
VBR
+0.127
9.400
-0.254
IH
VR
Continuous Reverse Voltage
ABSOLUTE RATINGS (limiting values) (Tj = + 25°C) L = 10mm
SYMBOL
PARAMETER
Power dissipation on infinite heatsink
Peak Pulse Current
VALUE
UNIT
W
25.4 min
P
Tamb = 50°C
5
Ipp
10x1000µsec
10/700 1.5KV
8-20 us expo
100
125
250
A
Non-repetitive surge peak on-state current
Critical rate of rise of on-state current
tp = 20 ms
50
Itsm
A
Non repetitive
100
di/dt
A/us
All dimensions in mm
Storage and operating junction
Temperature range
-40 to 150
150
T stg
Tj
°C
°C
Maximum lead temperature for soldering
during 10s at 4mm from case
230
TI
°C
THERMAL RESISTANCES
VALUE
UNIT
SYMBOL
PARAMETER
L = 10mm
20
75
°C/W
°C/W
Rth(j-i)
Rth(j-a)
Junction-leads on infinite heatsink
Junction-ambient on printed circuit
All parameters are tested using Fet Test ™ Model 3600
DEVICE
TYPE
IRM @ VRM
IR @ VR
max
VBO @ IBO
max
IH
C
typ
ORDERING INFORMATION
max
min
mA
150
150
150
150
150
150
150
µA
V
µA
50
50
50
50
50
50
50
V
V
mA
800
800
800
800
800
800
800
pF
T10B
180
160
140
140
130
120
120
T10B035
T10B065
T10B120
T10B140
T10B200
T10B230
T10B270
2
2
2
2
2
2
2
32
35
55
Voltage
55
65
80
110
120
170
200
230
120
140
200
230
270
160
200
265
300
350
Holding
Current Option
Packaging Option
B = Bulk (500 pcs)
T = Tape and reeled (1500 pcs)
w w w. l i t t e l f u s e . c o m
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