T10CL180BF [LITTELFUSE]
Silicon Surge Protector, 210V V(BO) Max, 50A, ROHS COMPLIANT PACKAGE-3;
| 型号： | T10CL180BF |
| 厂家： | 
LITTELFUSE |
| 描述： | Silicon Surge Protector, 210V V(BO) Max, 50A, ROHS COMPLIANT PACKAGE-3 |
| 文件： | 总2页 (文件大小：146K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
T10C SIDACtor® Device
RoHS
The bi-directional T10C devices are a through-hole technology SIDACtor protector. It is
intended for cost-sensitive telecommunication applications. The three-terminal configuration
matches G.D.T. pin configuration; for plug-in applications, the T10C fits in the KRONE™
three-point connector block (5B).
1
3
(T)
2
(G)
(R)
This T10 SIDACtor series enables equipment to comply with various regulatory
requirements including GR 1089, ITU K.20, K.21, and K.45, IEC 60950, UL 60950, and TIA-
968-A (formerly known as FCC Part 68).
For primary protection applications, integrated failsafe options are available.
Electrical Parameters
pF
Pin 1-2 / 3-2
Tip-Ground, Ring-Ground
TYP
pF
Pin 1-3
Tip-Ring
TYP
Part
V
@ 5 µA
V
S
V
I
S
I
H
DRM
T
Number *
Volts
Volts
120
120
135
135
170
170
210
210
265
265
360
360
Volts
mAmps
800
800
800
800
800
800
800
800
800
800
800
800
mAmps
120
180
120
180
120
180
120
180
120
180
120
180
T10C080B
80
80
4
4
4
4
4
4
4
4
4
4
4
4
110
110
90
90
83
83
77
77
74
74
68
68
61
61
51
51
48
48
44
44
42
42
38
38
T10C080E
T10C110B
T10C110E
T10C140B
T10C140E
T10C180B
T10C180E
T10C220B
T10C220E
T10C270B
T10C270E
105
105
140
140
175
175
214
214
270
270
* For failsafe option, add “F” at end of part number. See Section 9, “Mechanical Data” for mechanical view of failsafe option.
For surge ratings, see table below.
General Notes:
•
•
•
•
•
•
All measurements are made at an ambient temperature of 25 °C. I applies to -40 °C through +85 °C temperature range.
PP
I
PP
is a repetitive surge rating and is guaranteed for the life of the product.
Listed SIDACtor devices are bi-directional. All electrical parameters and surge ratings apply to forward and reverse polarities.
V
V
is measured at I
is measured at 0.5 V/µs across Pins 1-2 / 3-2.
across Pins 1-2 / 3-2.
DRM
DRM
S
Special voltage (V and V
) and holding current (I ) requirements are available upon request.
DRM H
S
Surge Ratings in Amps
I
PP
8x20 *
5x310 *
10x700 **
10x1000 *
10x1000 **
I
TSM
1.2x50 **
Amps
250
50 / 60 Hz
Amps
50
di/dt
Amps/µs
100
Series
Amps
Amps
C
125
100
* Current waveform in µs
** Voltage waveform in µs
Telecom Design Guide • © 2006 Littelfuse
3 - 29
www.littelfuse.com
T10C SIDACtor® Device
Thermal Considerations
Package
Symbol
Parameter
Operating Junction Temperature Range
Storage Temperature Range
Value
150
Unit
°C
[T10C]
T
J
T
-40 to +150
60
°C
S
R
Thermal Resistance: Junction to Ambient
°C/W
θJA
+I
tr = rise time to peak value
td = decay time to half value
IT
Peak
Value
100
IS
IH
Waveform = tr x td
IDRM
-V
50
0
+V
Half Value
VDRM
VT
VS
tr
td
0
t – Time (µs)
-I
V-I Characteristics
t x t Pulse Waveform
r d
14
12
10
8
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
6
25 ˚C
25 ˚C
4
2
0
-4
-6
-8
-40 -20
0
20 40 60 80 100 120 140 160
Case Temperature (TC) – ˚C
-40 -20
0
20 40 60 80 100 120 140 160
Junction Temperature (TJ) – ˚C
Normalized V Change versus Junction Temperature
S
Normalized DC Holding Current versus Case Temperature
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3 - 30
© 2006 Littelfuse • Telecom Design Guide
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