V12ZTX2 [LITTELFUSE]
Varistor, 8V, 1.2J, Through Hole Mount, RADIAL LEADED;
| 型号： | V12ZTX2 |
| 厂家： | 
LITTELFUSE |
| 描述： | Varistor, 8V, 1.2J, Through Hole Mount, RADIAL LEADED |
| 文件： | 总4页 (文件大小：524K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Metal-OxideVaristors (MOVs)
High Reliability Varistors
High Reliability Varistors
QPL
Description
Littelfuse High Reliability Varistors offer the latest in
increased product performance, and are available for
applications requiring quality and reliability assurance
levels consistent with military or other standards
(MIL-STD-19500, MIL-STD-202). Additionally, Littelfuse
Varistors are inherently radiation hardened compared
to Silicon Diode suppressors as illustrated in Figure 1.
ZA Series
Littelfuse High-Reliability Varistors involve four categories:
1
2
3
Qualified Products List (QPL) MIL-R-83530
(4 items presently available)
Agency Approvals
Littelfuse High Reliability SeriesTX Equivalents
(29 items presently available)
•
QPL
CustomTypes
Processed to customer-specific requirements
- (SCD) or to Standard Military Flow
Additional Information
Datasheet
ꢀesoꢁrꢂes
ꢀaꢁꢂles
Disclaimer Notice - Information furnished is believed to be accurate and reliable. However, users should independently evaluate the suitability of and
test each product selected for their own applications. Littelfuse products are not designed for, and may not be used in, all applications.
Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics.
© 2017 Littelfuse, Inc.
Specifications are subject to change without notice.
Revised: 09/14/17
Metal-OxideVaristors (MOVs)
High Reliability Varistors
1) DSSC Qualified Parts List (QPL) MIL-R-83530
This series of varistors are screened and conditioned in accordance with MIL-R-83530. Manufacturing system conforms to
MIL-I-45208; MIL-Q-9858.
Table 1. MIL-R-83530/1 Ratings and Characteristics
Voltage Rating
(V)
Nominal
Varistor
Voltage
(V)
Clamping
Capacitance Voltage At
at 1MHz (pF) Peak Current
Rating (V)
Part
Number
M83530/
Clamping
Voltage at
100A (V)
Nearest
Commercial
Equivalent
Tolerance
(%)
Energy
Rating (J)
(RMS)
(DC)
1-2000B
1-2200D
1-4300E
1-5100E
200
220
430
510
-/+10
130
150
275
320
175
200
369
420
50
55
100
120
325
360
680
810
3800
3200
1800
1500
570
650
1200
1450
V130LA20B
V150LA20B
V275LA40B
V320LA40B
+10, -5
+5, -10
+5, -10
2) Littelfuse High Reliability SeriesTX Equivalents
Table 2. AvailableTX ModelTypes
(See Section
(See Section
4) Nearest
Commercial
Equivalent
Device
Mark
Device
Mark
4) Nearest
Commercial
Equivalent
TX Model
Model Size
TX Model
Model Size
V130LTX2
V130LTX10A
V130LTX20B
7mm
14mm
20mm
130TX2
130L10
V130LA2
V130LA10A
V130LA20A
V8ZTX1
V8ZTX2
7mm
8TX1
8TX2
V8ZA1
V8ZA2
10mm
130TX20
V12ZTX1
V12ZTX2
7mm
10mm
12TX1
12TX2
V12ZA1
V12ZA2
V150LTX2
V150LTX10A
V150LTX20B
7mm
14mm
20mm
150L2
150TX10
150L20
V150LA2
V150LA10A
V150LA20B
V22ZTX1
V22ZTX3
7mm
14mm
22TX1
22TX3
V22ZA1
V22ZA3
V250LTX4
V250LTX20A
V250LTX40B
7mm
14mm
20mm
250L4
250L20
250L40
V250LA4
V250LA20A
V250LA40B
V24ZTX50
20mm
24TX50
V24ZA50
V33ZTX1
V33ZTX5
V33ZTX70
7mm
14mm
20mm
33TX1
33TX5
33TX70
V33ZA1
V33ZA5
V33ZA70
V420LTX20A
V420LTX40B
14mm
20mm
420L20
420L40
V420LA20A
V420LA40B
V480LTX40A
V480LTX80B
14mm
20mm
480L40
480TX80
V480LA40A
V480LA80B
V68ZTX2
V68ZTX10
7mm
14mm
68TX2
68TX10
V68ZA2
V68ZA10
V510LTX40A
V510LTX80B
14mm
20mm
510L40
510L80
V510LA40A
V510LA80B
V82ZTX2
V82ZTX12
7mm
14mm
82TX2
82TX12
V82ZA2
V82ZA12
TheTX Series of varistors are 100% screened and conditioned in accordance with MIL-STD-750. These tests are outlined in table 3 below
QA ACCEPTANCE
INSPECTION LOTS
FORMED AFTER
ASSEMBLY
REVIEW OF DATA
TX PREPARA TION
>
FOR DELIVERY
LOTS PROPOSED
FOR TX TYPES
SAMPLE PER
APPLICABLE DEVICE
SPECIFICATION
100% SCREENING
>
>
>
Table 3. TX Equivalents Series 100% Screening
MIL-STD-105
LTPD
LEVEL
AQL
Electrical (Bidirectional)
II
0.1
-
V
N(DC), VC (Per SpecificationsTable)
Dielectric Withstand Voltage
MIL–STD–202, Method 301, 2500V Min. at 1.0µADC
-
-
-
-
15
15
Solderability
MIL–STD–202, Method 208, No Aging, Non-Activated
© 2017 Littelfuse, Inc.
Specifications are subject to change without notice.
Revised: 09/14/17
Metal-OxideVaristors (MOVs)
High Reliability Varistors
Table 4. Quality Assurance AcceptanceTests
MIL-STD-750
Method
Screen
Condition
TX Requirements
HighTemperature Life
(Stabilization Bake)
1032
24 hours min at max rated storage temperature.
100%
Thermal Shock
No dwell is required at 25°C. Test condition A1, 5 cycles -55°C to +125°C
(extremes) >10 minutes.
(Temperature Cycling)
1051
100%
100%
Humidity Life
85°C, 85% RH, 168 Hrs.
Interim Electrical VN(DC) VC
(Note 3)
As specified, but including delta parameter as a minimum.
100% Screen
100%
Power Burn-In
1038
2071
Condition B, 85°C, rated VM(AC), 72 hours min.
Final Electrical +VN(DC) VC
(Note 3)
As specified - All parameter measurements must be completed within 96
hours after removal from burn-in conditions.
100% Screen
External Visual
Examination
To be performed after complete marking.
100%
3) CustomTypes
In addition to our comprehensive high-reliability series, Littelfuse can screen and condition to specific requirements.
Additional mechanical and environmental capabilities are defined inTable 5.
Table 5. Mechanical And Environmental Capabilities (Typical Conditions)
Test Name
Terminal Strength
Test Method
MIL-STD-750-2036
MIL-STD-750-2016
MIL-STD-750-2056
MIL-STD-750-2006
MIL-STD-750-1041
MIL-STD-750-2031/2026
MIL–STD–202-215
MIL–STD–202-111
MIL–STD–202-106
MIL–STD–750-1021.3
MIL–STD–750-1021.3
MIL–STD–202-107
MIL-STD-750-1032
MIL-STD-750-1038
MIL-STD-750-1071
Description
3 Bends, 90° Arc, 16oz. Weight
1500g’s, 0.5ms, 5 Pulses, X1, V1, Z1
20g’s, 100-2000Hz, X1, V1, Z1
V2, 20,000g’s Min
35°C, 24Hr, 10-50g/m2 Day
260°C, 10s, 3 Cycles, Test Marking
Permanence, 3 Solvents
15sTorching, 10s to Flameout
10 Days
Drop Shock
Variable Frequency Vibration
Constant Acceleration
Salt Atmosphere
Soldering Heat/Solderability
Resistance to Solvents
Flammability
Cyclical Moisture Resistance
Steady-State Moisture Resistance
Biased Moisture Resistance
Temperature Cycle
85/85 96Hr
Not Recommended for High-VoltageTypes
-55°C to 125°C, 5 Cycles
125°C, 24Hr
High-Temperature Life (Nonoperating)
Burn-In
RatedTemperature and VRMS
Condition D
Hermetic Seal
© 2017 Littelfuse, Inc.
Specifications are subject to change without notice.
Revised: 09/14/17
Metal-OxideVaristors (MOVs)
High Reliability Varistors
Radiation Hardness
For space applications, an extremely important property of a
protection device is its response to imposed radiation effects.
Counterclockwise rotation of the V-I characteristics is
observed in Silicon devices at high neutron irradiation
levels; in other words, increasing leakage at low current
levels and increasing clamping voltage at higher current
levels.
Electron Irradiation
A Littelfuse MOV and a Silicon transient suppression diode
were exposed to electron irradiation. The V-I curves, before
and after test, are shown below.
The solid and open circles for a given fluence represent the
high and low breakdown currents for the sample of devices
tested. Note that there is a marked decrease in current (or
energy) handling capability with increased neutron fluence.
LITTELFUSE MOV
200
SILICON
TRANSIENT
Failure threshold of Silicon semiconductor junctions is
further reduced when high or rapidly increasing currents
are applied. Junctions develop hot spots, which enlarge
until a short occurs if current is not limited or quickly
removed.
SUPPRESSION
DIODE
V
100
80
60
PRE TEST
10 RADS,
18MeV ELECTRONS
The characteristic voltage current relationship of a P– N
Junction is shown below.
40
20
8
I
8
6
4
2
10
10
10
CURRENT (A)
10
SATURATION
It
is
CURRENT
FORWARD
BIAS
FIGURE 1. RADIATION SENSITIVITY OF LITTELFUSEV130LA1
AND SILICON TRANSIENT SUPPRESSION DIODE
BREAKDOWN
VOLTAGE
apparent that the Littelfuse MOV was virtually unaffected,
even at the extremely high dose of 108 rads, while the
Silicon transient suppression diode showed a dramatic
increase in leakage current.
V
REDUCTION IN
FAILURE STRESSHOLD
BY RADIAL
Neutron Effects
A second MOV-Zener comparison was made in response to
neutron fluence.The selected devices were equal in area.
SECONDARY
BREAKDOWN
Figure 2 shows the clamping voltage response of the MOV
and the Zener to neutron irradiation to as high as 1015 N/
cm2. It is apparent that in contrast to the large change in
the Zener, the MOV is unaltered. At highercurrents where
the MOV’s clamping voltage is again unchanged, the Zener
device clamping voltage increases by as much as 36%.
REVERSE
BIAS
FIGURE 3. V-I CHARACTERISTIC OF PN-JUNCTION
At low reverse voltage, the device will conduct very little
current (the saturation current). At higher reverse voltage
VBO (breakdown voltage),the current increases rapidly as
the electrons are either pulled by the electric field (Zener
effect) or knocked out by other electrons (avalanching). A
further increase in voltage causes the device to exhibit a
negative resistance characteristic leading to secondary
breakdown.
300
1.5K 200 INITIAL
VARISTOR V130A2
200
15
INITIAL AT 10
100
80
1.5K 200
AT 10
12
60
50
40
This manifests itself through the formation of hotspots,
and irreversible damage occurs. This failure threshold
decreases under neutron irradiation for Zeners, but not for
ZNO Varistors.
30
1.5K 200
AT 10
1.5K 200
AT 10
1.5K 200
AT 10
20
14
15
13
Gamma Radiation
10
10
8
7
6
5
4
3
10
10
10
10
10
10
10
Radiation damage studies were performed on type
V130LA2 varistors. Emission spectra and V-I characteristics
were collected before and after irradiation with 106 rads
Co60 gamma radiation. Both show no change, within
experimental error, after irradiation.
AMPERES
FIGURE 2. V-I CHARACTERISTIC RESPONSETO NEUTRON
IRRADIATION FOR MOV AND ZENER DIODE
DEVICES
© 2017 Littelfuse, Inc.
Specifications are subject to change without notice.
Revised: 09/14/17
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