VBH40-05A [LITTELFUSE]
Power Field-Effect Transistor, 40A I(D), 500V, 0.116ohm, 4-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET,;
| 型号： | VBH40-05A |
| 厂家： | 
LITTELFUSE |
| 描述： | Power Field-Effect Transistor, 40A I(D), 500V, 0.116ohm, 4-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, 局域网 开关 晶体管 |
| 文件： | 总3页 (文件大小：50K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Advanced Technical Information
VBH 40-05A
Module with HiPerFETTM H-Bridge and
Single Phase Mains Rectifier Bridge
VDSS = 500 V
RDSon = 116 mΩ
VRRM = 1200 V
IDAV25 = 90 A
Application
Mains Rectifier Bridge D1 - D4
primary side of mains supplied
• welding converters
Symbol
VRRM
Conditions
Maximum Ratings
1200
V
• switched mode power supplies
• induction heaters
IFAV25
IFAV80
TC = 25°C; sine 180°
TC = 80°C; sine 180°
45
33
A
A
Features
IFSM
TVJ = 25°C; t = 10 ms sine 50 Hz
400
A
• H-bridge with
HiPerFETTM technology:
- low RDSon
- unclamped inductive switching
(UIS) capability
- dv/dt ruggedness
Symbol
Conditions
Characteristic Values
(TVJ = 25°C, unless otherwise specified)
min. typ. max.
- fast intrinsic reverse diode
- Kelvin source for easy drive
- low inductive, symmetrical current
paths
VF
IR
IF = 20 A
TVJ = 25°C
TVJ = 125°C
1.1
1.0
1.2
V
V
VR = VRRM
TVJ = 25°C
TVJ = 125°C
0.02 mA
mA
0.4
2.8
• thermistor for internal temperature
measurement
RthJC
RthJS
(per diode)
with heat transfer paste
1.42 K/W
K/W
• package:
- high level of integration - only one
power semiconductor module
required for the whole primary side
- solder terminals for PCB mounting
- isolated DCB ceramic base plate
IXYS reserves the right to change limits, test conditions and dimensions.
© 2000 IXYS All rights reserved
IXYS Semiconductor GmbH
1 - 3
IXYS Corporation
Edisonstr. 15,
Phone: +49-6206-503-0, Fax: +49-6206-503627
D-68623 Lampertheim
3540 Bassett Street, Santa Clara CA 95054
Phone: (408) 982-0700, Fax: 408-496-0670
VBH 40-05A
MOSFET H - Bridge T1 - T4
Symbol
VDSS
Conditions
Maximum Ratings
TVJ = 25°C to 150°C
500
±20
V
V
VGS
ID25
ID80
TC = 25°C
TC = 80°C
40
30
A
A
IF25
IF80
(diode) TC = 25°C
(diode) TC = 80°C
40
30
A
A
Symbol
Conditions
Characteristic Values
(TVJ = 25°C, unless otherwise specified)
min.
typ. max.
RDSon
VGSth
IDSS
VGS = 10 V;ID = ID80
116 mΩ
VDS = 20 V;ID = 8 mA
2
4
V
VDS = 0.8 • VDSS;VGS = 0 V; TVJ = 25°C
TVJ = 125°C
0.4 mA
mA
0.5
IGSS
VGS = ±20 V; VDS = 0 V
0.2 µA
Qg
Qgs
Qgd
270
56
124
nC
nC
nC
VGS= 10 V; VDS = 0.5 • VDSS; ID = 20A
td(on)
tr
td(off)
tf
50
100
100
80
ns
ns
ns
ns
VGS= 10 V; VDS = 0.5 • VDSS
ID = 20A; RG = 1 Ω
;
VF
trr
(diode) IF = 20 A;VGS = 0 V
1.5
V
(diode) IF = 40 A;-di/dt = 200 A/µs; VDS = 100V
300
ns
RthJC
RthJS
0.32 K/W
K/W
with heat transfer paste
0.47
Temperature Sensor NTC
Symbol
Conditions
Characteristic Values
min.
typ. max.
R25
B25/100
T = 25°C
1950 2057 2170
3560
Ω
K
dS
dA
Creepage distance on surface
Strike distance through air
8
8
mm
mm
2 - 3
© 2000 IXYS All rights reserved
VBH 40-05A
Module
Symbol
Conditions
Maximum Ratings
TVJ
Tstg
-40...+150
-40...+125
°C
°C
VISOL
Md
I
ISOL ≤ 1 mA; 50/60 Hz; t = 1 min
3000
V~
Mounting torque (M5)
2 - 2.5
Nm
Symbol
Weight
Conditions
Characteristic Values
(TVJ = 25°C, unless otherwise specified)
min.
typ. max.
typ.
80
g
Dimensions in mm (1 mm = 0.0394")
3 - 3
© 2000 IXYS All rights reserved
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