VUI9-06N7 [LITTELFUSE]

Insulated Gate Bipolar Transistor, 37A I(C), 600V V(BR)CES, N-Channel,;
VUI9-06N7
型号: VUI9-06N7
厂家: LITTELFUSE    LITTELFUSE
描述:

Insulated Gate Bipolar Transistor, 37A I(C), 600V V(BR)CES, N-Channel,

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VUM2405

Power MOSFET Stage for Boost Converters

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19 IXYS

VUM24-05

Power MOSFET Stage for Boost Converters

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35 IXYS

VUM24-05

Power MOSFET Stage for Boost Converters

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39 IXYS

VUM24-05N

Power MOSFET Stage for Boost Converters Module for Power Factor Correction

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22 IXYS

VUM25-05

Rectifier Module for Three Phase Power Factor Correction

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38 IXYS

VUM25-05

Rectifier Module for Three Phase Power Factor Correction

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19 IXYS

VUM25-05E

Rectifier Module for Three Phase Power Factor Correction

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32 IXYS

VUM25-05E

Rectifier Module for Three Phase Power Factor Correction

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31 IXYS

VUM33-05

Power MOSFET Stage for Boost Converters

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45 IXYS

VUM33-05N

Power MOSFET Stage for Boost Converters

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123 IXYS

VUM33-06PH

Power Field-Effect Transistor, 50A I(D), 600V, 0.12ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MODULE-8

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1 IXYS

VUM35-05P1

Power Field-Effect Transistor, 35A I(D), 500V, 0.12ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ECOPAC-8

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0 LITTELFUSE

VUM85-05A

Rectifier Module for Three Phase Power Factor Correction

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72 IXYS

VUO100

Three Phase Rectifier Bridge

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39 IXYS

VUO100

Three Phase Rectifier Bridge

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14 IXYS