VWO35-12IO7 [LITTELFUSE]
Silicon Controlled Rectifier, 35A I(T)RMS, 16000mA I(T), 1200V V(DRM), 1200V V(RRM), 6 Element,;
| 型号： | VWO35-12IO7 |
| 厂家： | 
LITTELFUSE |
| 描述： | Silicon Controlled Rectifier, 35A I(T)RMS, 16000mA I(T), 1200V V(DRM), 1200V V(RRM), 6 Element, |
| 文件： | 总2页 (文件大小：79K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
VWO 35
IRMS = 3x 35 A
VRRM = 600-1200 V
AC Controller Modules
Preliminary data
B
A
E
C
G
F
VRSM
VDSM
V
VRRM
VDRM
V
Type
700
900
1300
600
800
1200
VWO 35-06io7
VWO 35-08io7
VWO 35-12io7
I
H
L
J
N
M
Features
Symbol
IRMS
Test Conditions
Maximum Ratings
TC = 85°C, (per phase)
35
A
●
Thyristor controller for AC (circuit
W3C acc. to IEC) for mains frequency
Soldering connections for PCB
mounting
Isolation voltage 3000 V~
ITAVM
ITSM
TC = 85°C; (180° sine ; per thyristor)
16
A
●
TVJ = 45°C;
VR = 0
t = 10 ms (50 Hz), sine
t = 8.3 ms (60 Hz), sine
200
210
A
A
●
●
Planar passivated chips
TVJ = TVJM
VR = 0
t = 10 ms (50 Hz), sine
t = 8.3 ms (60 Hz), sine
180
190
A
A
I2t
TVJ = 45°C
VR = 0
t = 10 ms (50 Hz), sine
t = 8.3 ms (60 Hz), sine
200
150
A2s
A2s
Applications
T
VJ = TVJM
t = 10 ms (50 Hz), sine
t = 8.3 ms (60 Hz), sine
160
150
A2s
A2s
●
VR = 0
Switching and control of
three phase AC circuits
Softstart AC motor controller
Solid state switches
Light and temperature control
(di/dt)cr
TVJ = TVJM
repetitive, IT = 20 A
100
A/µs
●
f =50 Hz, tP =200 µs
VD = 2/3 VDRM
IG = 0.15 A
●
●
non repetitive, IT = ITAVM
VDR = 2/3 VDRM
500
500
10
A/µs
V/µs
V
diG/dt = 0.15 A/µs
(dv/dt)cr
TVJ = TVJM;
RGK = ∞; method 1 (linear voltage rise)
Advantages
VRGM
PGM
●
Easy to mount with two screws
Space and weight savings
Improved temperature and power
cycling
●
TVJ = TVJM
IT = ITAVM
tp = 30 µs
tp = 300 µs
≤
≤
5
2.5
0.5
W
W
W
●
PGAVM
TVJ
TVJM
Tstg
-40...+125
125
-40...+125
°C
°C
°C
VISOL
50/60 Hz, RMS
t = 1 min
t = 1 s
2500
3000
V~
V~
IISOL ≤ 1 mA
Md
Mounting torque (M4)
1.5 - 2
Nm
14 - 18 lb.in.
18
Weight
typ.
g
Data according to IEC 60747 refer to a single thyristor/diode unless otherwise stated.
IXYS reserves the right to change limits, test conditions and dimensions
© 2000 IXYS All rights reserved
1 - 2
VWO 35
Symbol
ID, IR
Test Conditions
Characteristic Values
TVJ = TVJM; VR = VRRM; VD = VDRM
IT = 20 A; TVJ = 25°C
≤
≤
5
1.6
mA
V
VT
VT0
rT
For power-loss calculations only (TVJ = 125°C)
0.85
27 mΩ
V
VGT
IGT
VD = 6 V;
VD = 6 V;
TVJ = 25°C
TVJ = -40°C
TVJ = 25°C
≤
≤
≤
≤
1.5
2.5
25 mA
50 mA
V
V
T
VJ = -40°C
VGD
IGD
TVJ = TVJM
;
VD = 2/3 VDRM
≤
≤
0.2
3
V
mA
IL
TVJ = 25°C; tP = 10 µs
≤
75 mA
IG = 0.1 A; diG/dt = 0.1 A/µs
IH
TVJ = 25°C; VD = 6 V; RGK = ∞
≤
≤
50 mA
tgd
TVJ = 25°C; VD = 1/2 VDRM
IG = 0.1 A; diG/dt = 0.1 A/µs
2
µs
RthJC
RthJK
per thyristor; DC
per module
per thyristor; DC
per module
1.3 K/W
0.22 K/W
1.8 K/W
0.3 K/W
dS
dA
a
Creeping distance on surface
Creepage distance in air
Max. allowable acceleration
11.2 mm
5.0 mm
50 m/s2
Dimensions in mm (1 mm = 0.0394")
© 2000 IXYS All rights reserved
2 - 2
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