概述
数据手册KG1200A800-1200V Y55KAC 概述
可控硅、晶闸管
KG1200A800-1200V Y55KAC 数据手册
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PDF下载KG1200A800~1200V
Y55KAC
国标型 高频晶闸管 平板式
-
(
)
Chinese Type High Frequency Thyristors (Capsule Version)
Liujing rectifier co., Ltd.
FEATURES
1). Interdigitated amplifying gates
2). Fast turn-on and high di/dt
3). Low switching losses
IT(AV)
1501A
VDRM/VRRM 800~1200V
tq
ITSM
μ
s
12~20
17KA
4). Short turn-off time
5). Hermetic metal cases with ceramic insulators
TYPICAL APPLICATIONS
1). Inductive heating
4). AC motor speed control
2). Electronic welders
5). General power switching applications
3). Self-commutated inverters
THE MAIN PARAMETERS
VALUE
Min Type Max
℃
SYMBOL
IT(AV)
CHARACTERISTIC
Mean forward current
TEST CONDITIONS
Tj(
)
UNIT
A
°
180 half sine wave 50Hz
Double side cooled, Ths=55
125
125
125
125
125
1501
℃
VDRM
VRRM
Repetitive peak off-state voltage
Repetitive peak reverse voltage
V
DRM&VRRM,tp=10ms
800
1200
V
V
DSM&VRSM= VDRM&VRRM+100V
IDRM
IRRM
Repetitive peak off-state current
Repetitive peak reverse current
VD= VDRM
VR= VRRM
100
17
mA
KA
ITSM
I2t
VTO
rT
VTM
dv/dt
Surge on-state current
I2T for fusing coordination
Threshold voltage
On-state slop resistance
Peak on-state voltage
10ms half sine wave
VR=0.6VRRM
1445 A2s*103
1.27
0.23
2.50
200
V
Ω
m
V
ITM=3000A, F=26KN
125
125
VDM=0.67VDRM
μ
Critical rate of rise of off-state voltage
V/
s
s
VDM= 67%VDRM to3000A,
μ
di/dt
Critical rate of rise of on-state current
125
1500
A/
μ
Gate pulse tr ≤0.5 s IGM=1.5A
Irm
trr
Qrr
Reverse recovery current
Reverse recovery time
Recovery charge
60
3.0
90
A
μ
ITM=1500A,tp=1000 s,
μ
di/dt=-20A/ s,
μ
125
125
s
VR=50V
μ
110
20
C
μ
ITM=1500A,tp=1000 s, VR =50V
μ
s
tq
Circuit commutated turn-off time
12
μ
dv/dt=30V/ s ,di/dt=-20A/
μ
s
IGT
VGT
IH
Gate trigger current
Gate trigger voltage
Holding current
30
0.8
20
300
3.0
400
mA
V
mA
V
25
VA=12V, IA=1A
Non-trigger gate voltage
V
DM=67%VDRM
125
0.3
VGD
°
At 180 sine, double side cooled
Clamping force 26KN
Thermal resistance
Junction to heatsink
℃
/W
Rth(j-h)
0.022
Fm
Mounting force
Stored temperature
Weight
21
-40
30
140
KN
℃
T
stg
Wt
620
g
×
×
Size
Package box size
mm
160 145 65
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KG1200A800~1200V
PERFORMANCE CURVES FIGURE
Max. junction To heatsink Thermai Impedance Vs.Time
ꢀꢆꢀꢁꢌ
Peak On-state Voltage Vs.Peak On-state Current
ꢂꢆꢌ
ꢂ
TJ=125eC
ꢀꢆꢀꢁ
ꢀꢆꢀꢅꢌ
ꢀꢆꢀꢅ
ꢀꢆꢀꢀꢌ
ꢀ
ꢊꢆꢌ
ꢊ
ꢁꢆꢌ
ꢁ
ꢅꢆꢌ
ꢅ
ꢅꢀꢀ
ꢅꢀꢀꢀ
ꢅꢀꢀꢀꢀ
ꢅꢀꢀꢀꢀꢀ
ꢀꢆꢀꢀꢅ
ꢀꢆꢀꢅ
ꢀꢆꢅ
ꢅ
ꢅꢀ
Instantaneous on-state current,amperes
Time,seconds
Fig.1
Fig.2
2
Surge Current Vs.Cycles
I t Vs.Time
ꢁꢀ
ꢅꢄ
ꢅꢃ
ꢅꢂ
ꢅꢁ
ꢅꢀ
ꢄ
1600
1400
1200
1000
800
600
ꢃ
ꢂ
400
ꢅ
ꢅꢀ
ꢅꢀꢀ
1
10
Cycles at 50Hz
Time,m.seconds
Fig.3
Fig.4
Gate characteristic at 25eC junction temperature
ꢅꢄ
Gate Trigger Zone at varies temperature
ꢂꢆꢌ
-30eC
-10eC
ꢂ
ꢊꢆꢌ
ꢊ
ꢅꢃ
ꢅꢂ
ꢅꢁ
ꢅꢀ
ꢄ
3*0 ꢅꢁꢀ:
25
eC
ꢇꢅꢀꢀVꢈ6SXOVHꢉ
PD[ꢆ
125eC
ꢁꢆꢌ
ꢁ
ꢅꢆꢌ
ꢅ
PLQꢆ
ꢃ
ꢂ
3*ꢁ:
ꢀꢆꢌ
ꢀ
ꢁ
ꢀ
ꢀ
ꢅꢀꢀ
ꢁꢀꢀ
ꢊꢀꢀ
ˈ
ꢂꢀꢀ
ꢌꢀꢀ
ꢃꢀꢀ
ꢀ
ꢂ
ꢄ
ꢅꢁ
ˈ
ꢅꢃ
ꢁꢀ
Gate current,IGT mA
Gate current,IGT
A
Fig.6
Fig.5
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KG1200A800~1200V
OUTLINE
E-mail: rectifier@163.com
thyristors@yahoo.cn
YUEQING LIUJING RECTIFIER CO., LTD
Sale Departmant: Liujing Building, Yueqing City,
Zhejiang Province
Add: Wanao Industrial Zone, Yueqing city,
Zhejiang Province
Tel: 0086-577-62519692 0089-577-62519693
Fax: 0086-577-62518692
打造最具竞争力的电力半导体产品
International Export: 0086-577-62571902
Technical Support: 0086-15868768965
After Service: 400-6606-086
To be the most competitive Power Semiconductor
Devices manufactory.
http://www.china-liujing.com
http://www.liujingdianqi.cn
http://www.cnrectifier.com
http://www.cnthyristor.com.cn
MSN: thristors@hotmail.com
LIUJING reserves the right to change limits, test conditions and dimensions.
윤정은 이 칼타로그 중에 데이트, 테스트 조건, 외형사이즈에 대한 최종 해석권을 가지고 있습니다.
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