KG200A600-900V T38KAB [LIUJING]
可控硅、晶闸管;
| 型号： | KG200A600-900V T38KAB |
| 厂家： | 
浙江柳晶整流器有限公司 |
| 描述： | 可控硅、晶闸管 可控硅 |
| 文件： | 总3页 (文件大小：445K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
KG200A600~900V
T38KAB
国标型 高频晶闸管 平板式
-
(
)
Chinese Type High Frequency Thyristors (Capsule Version)
Liujing rectifier co., Ltd.
FEATURES
1). Interdigitated amplifying gates
2). Fast turn-on and high di/dt
3). Low switching losses
IT(AV)
746A
VDRM/VRRM 600~900V
tq
ITSM
μ
s
10~15
8.0KA
4). Short turn-off time
5). Hermetic metal cases with ceramic insulators
TYPICAL APPLICATIONS
1). Inductive heating
4). AC motor speed control
2). Electronic welders
5). General power switching applications
3). Self-commutated inverters
THE MAIN PARAMETERS
VALUE
Min Type Max
℃
SYMBOL
IT(AV)
CHARACTERISTIC
Mean forward current
TEST CONDITIONS
Tj(
)
UNIT
A
°
180 half sine wave 50Hz
Double side cooled, Ths=55
125
125
125
125
125
746
℃
VDRM
VRRM
Repetitive peak off-state voltage
Repetitive peak reverse voltage
V
DRM&VRRM,tp=10ms
600
900
40
V
V
DSM&VRSM= VDRM&VRRM+100V
IDRM
IRRM
Repetitive peak off-state current
Repetitive peak reverse current
VD= VDRM
VR= VRRM
mA
ITSM
I2t
VTO
rT
VTM
dv/dt
Surge on-state current
I2T for fusing coordination
Threshold voltage
On-state slop resistance
Peak on-state voltage
8.0
320
1.80
0.48
2.47
200
KA
A2s*103
V
Ω
m
V
10ms half sine wave
VR=0.6VRRM
ITM=1400A, F=15KN
125
125
VDM=0.67VDRM
μ
Critical rate of rise of off-state voltage
V/
s
s
VDM= 67%VDRM to1500A,
μ
di/dt
Critical rate of rise of on-state current
125
1500
A/
μ
Gate pulse tr ≤0.5 s IGM=1.5A
Irm
trr
Qrr
Reverse recovery current
Reverse recovery time
Recovery charge
30
2.2
33
A
μ
ITM=800A,tp=1000 s,
μ
di/dt=-20A/ s,
μ
125
125
s
VR=50V
μ
50
15
C
μ
ITM=800A,tp=1000 s, VR =50V
μ
dv/dt=30V/ s ,di/dt=-20A/
μ
s
tq
Circuit commutated turn-off time
10
μ
s
IGT
VGT
IH
Gate trigger current
Gate trigger voltage
Holding current
30
0.8
20
250
3.0
400
mA
V
mA
V
25
VA=12V, IA=1A
Non-trigger gate voltage
V
DM=67%VDRM
125
0.3
VGD
°
At 180 sine, double side cooled
Clamping force 15KN
Thermal resistance
Junction to heatsink
℃
/W
Rth(j-h)
0.035
Fm
Mounting force
Stored temperature
Weight
10
-40
20
140
KN
℃
T
stg
Wt
270
g
Size
Package box size
×
×
mm
95 95 50
www.china-liujing.com
1 / 3
KG200A400~900V
PERFORMANCE CURVES FIGURE
ꢈ.$
Max. junction To heatsink Thermai Impedance Vs.Time
Peak On-state Voltage Vs.Peak On-state Current
ꢆꢁꢆꢄ
ꢆꢁꢆꢃꢂ
ꢆꢁꢆꢃ
ꢆꢁꢆꢀꢂ
ꢆꢁꢆꢀ
ꢆꢁꢆꢅꢂ
ꢆꢁꢆꢅ
ꢆꢁꢆꢆꢂ
ꢆ
ꢂꢁꢂ
ꢂ
TJ=125eC
ꢄꢁꢂ
ꢄ
ꢃꢁꢂ
ꢃ
ꢀꢁꢂ
ꢁ
ꢅꢆꢉ
ꢆꢁꢆꢆꢅ
ꢆꢁꢆꢅ
ꢆꢁꢅ
ꢅ
ꢅꢆ
ꢅꢆꢆ
ꢅꢆꢆꢆ
ꢅꢆꢆꢆꢆ
Time,seconds
Instantaneous on-state current,amperes
Fig.1
Fig.2
Surge Current Vs.Cycles
2
I t Vs.Time
350
300
250
200
150
100
50
ꢊ
ꢉ
ꢈ
ꢇ
ꢂ
ꢄ
ꢃ
ꢀ
ꢅ
ꢅ
ꢅꢆ
ꢅꢆꢆ
1
10
Time,m.seconds
Cycles at 50Hz
Fig.3
Fig.4
Gate characteristic at 25eC junction temperature
Gate Trigger Zone at varies temperature
ꢅꢄ
ꢄꢁꢂ
-30eC
-10eC
ꢅꢃ
ꢅꢂ
ꢅꢁ
ꢅꢀ
ꢄ
ꢄ
ꢃꢁꢂ
ꢃ
PGM=100W
(100嘕s spulse
25
eC
ꢇ
PD[ꢆ
125eC
ꢀꢁꢂ
ꢀ
PLQꢆ
ꢃ
ꢅꢁꢂ
ꢅ
3*ꢁ:
ꢂ
ꢁ
ꢆꢁꢂ
ꢆ
ꢀ
ꢀ
ꢂ
ꢄ
ꢅꢁ
ꢅꢃ
ꢁꢀ
ꢆ
ꢅꢆꢆ
ꢀꢆꢆ
ꢃꢆꢆ
ˈ
ꢄꢆꢆ
ꢂꢆꢆ
Gate curren,IGT,A
Gate current,IGT mA
Fig.6
Fig.5
www.china-liujing.com
2 / 3
KG200A400~900V
OUTLINE
E-mail: rectifier@163.com
thyristors@yahoo.cn
YUEQING LIUJING RECTIFIER CO., LTD
Sale Departmant: Liujing Building, Yueqing City,
Zhejiang Province
Add: Wanao Industrial Zone, Yueqing city,
Zhejiang Province
Tel: 0086-577-62519692 0089-577-62519693
Fax: 0086-577-62518692
打造最具竞争力的电力半导体产品
International Export: 0086-577-62571902
Technical Support: 0086-15868768965
After Service: 400-6606-086
To be the most competitive Power Semiconductor
Devices manufactory.
http://www.china-liujing.com
http://www.liujingdianqi.cn
http://www.cnrectifier.com
http://www.cnthyristor.com.cn
MSN: thristors@hotmail.com
LIUJING reserves the right to change limits, test conditions and dimensions.
윤정은 이 칼타로그 중에 데이트, 테스트 조건, 외형사이즈에 대한 최종 해석권을 가지고 있습니다.
www.china-liujing.com
3 / 3
相关型号：
©2020 ICPDF网 联系我们和版权申明