KP1800A1100-1800V Y60KPE [LIUJING]

可控硅、晶闸管;
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KP1800A1100~1800V
Y60KPE
Chinese Type Phase Control Thyristors (Capsule Version)
L i u j in g r e cti fi e r co ., L td .
�½标型
-
普通晶闸管
(
平板式
)
FEATURES
1). Center amplifying gate
2). Metal case with ceramic insulator
3). Low on-state and switching losses
TYPICAL APPLICATIONS
1). AC controllers
2). DC and AC motor control
3). Controlled rectifiers
I
T(AV)
V
DRM
/V
RRM
I
TSM
I
2
t
2026A
1100~1800V
30 KA
4500 10
3
A
2
S
THE MAIN PARAMETERS
SYMBOL
I
T(AV)
V
DRM
V
RRM
I
DRM
I
RRM
I
TSM
I
2
t
V
TO
r
T
V
TM
dv/dt
di/dt
I
rm
t
rr
Q
rr
I
GT
V
GT
I
H
V
GD
R
th(j-h)
F
m
T
stg
W
t
Outline
CHARACTERISTIC
Mean on-state current
Repetitive peak off-state voltage
Repetitive peak reverse voltage
Repetitive peak off-state current
Repetitive peak reverse current
Surge on-state current
I
2
T for fusing coordination
Threshold voltage
On-state slop resistance
Peak on-state voltage
Critical rate of rise of off-state voltage
Critical rate of rise of on-state current
Reverse recovery current
Reverse recovery time
Recovery charge
Gate trigger current
Gate trigger voltage
Holding current
Non-trigger gate voltage
Thermal resistance
Junction to heatsink
Mounting force
Stored temperature
Weight
Package box size
160
×
145
×
65
O
TEST CONDITIONS
180 half sine wave 50Hz T
hs
=55
Double side cooled,
T
hs
=66
V
DRM
&V
RRM
,tp=10ms
V
DSM
&V
RSM
= V
DRM
&V
RRM
+100V
V
D
= V
DRM
V
R
= V
RRM
10ms half sine wave
V
R
=0.6V
RRM
T
j
(
)
125
125
125
125
125
VALUE
Min Type
Max
2026
1800
UNIT
A
V
mA
KA
A s*10
3
V
m
Ω
V
V/
μ
s
A/
μ
s
A
μ
s
μ
C
mA
V
mA
V
/W
KN
g
mm
1/3
2
1100
1800
120
30
4500
0.98
0.15
1.58
1000
200
165
18.5
1576
300
3.0
300
0.020
I
TM
=4000A, F=28KN
V
DM
=0.67V
DRM
V
DM
= 67%V
DRM
to2500A,
Gate pulse t
r
≤0.5
μ
s I
GM
=1.5A
I
TM
=1000A,tp=1000
μ
s,
di/dt=-20A/
μ
s,
VR=50V
V
A
=12V, I
A
=1A
V
DM
=67%V
DRM
At 180
°
sine, double side cooled
Clamping force 28KN
125
125
125
125
40
0.8
20
0.3
25
125
21
-40
650
30
140
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KP1800A1100~1800V
PERFORMANCE CURVES FIGURE
Peak On-state Voltage Vs.Peak On-state Current
Transient thermal impedance C/W
Max. junction To heatsink Thermai Impedance Vs.Time
Instantaneous on-state voltage,volts
T
J
=125
Instantaneous on-state currant,amperes
Time,seconds
Fig.1
Max. Power Dissipation Vs.Mean On-state Current
Fig.2
Max. heatsink Temperature Vs.Mean On-state Current
Max.on-state dissipation ,watts
Conduction Angle
Heatsink temperature, C
Conduction Angle
Mean on-state current,amperes
Mean on-state current,amperes
Fig.3
Max. Power Dissipation Vs.Mean On-state Current
Max.on-state dissipation ,watts
360
Fig.4
Max. heatsink Temperature Vs.Mean On-state Current
360
Heatsink temperature, C
Conduction Angle
Conduction Angle
Mean on-state current,amperes
Mean on-state current,amperes
Fig.5
Surge Current Vs.Cycles
30
5000
2
Fig.6
I
4500--30
t Vs.Time
Total peak half-sine surge current,kA
4500
Maximum I
2
t(Kamps
2
,secs)
4000
3500
3000
2500
2000
1500
1000
Cycles at 50Hz
1
Time,m.seconds
10
Fig.7
Fig.8
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KP1800A1100~1800V
Gate characteristic at 25 C junction temperature
Gate Trigger Zone at varies temperature
-30 C
-10 C
V
25
C
125 C
Gate voltage,V
GT
Gate current,I
GT
Gate voltage,V
GT
V
A
Gate current,I
GT
mA
Fig.9
Fig.10
OUTLINE
E-mail: rectifier@163.com
YUEQING LIUJING RECTIFIER CO., LTD
Sale Departmant: Liujing Building, Yueqing City,
Zhejiang Province
Add: Wanao Industrial Zone, Yueqing city,
Zhejiang Province
Tel: 0086-577-62519692 0089-577-62519693
Fax: 0086-577-62518692
International Export: 0086-577-62571902
Technical Support: 0086-15868768965
After Service: 400-6606-086
http://www.china-liujing.com
http://www.liujingdianqi.cn
http://www.cnrectifier.com
http://www.cnthyristor.com.cn
MSN: thristors@hotmail.com
26 0.5
thyristors@yahoo.cn
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To be the most competitive Power Semiconductor
Devices manufactory.
LIUJING reserves the right to change limits, test conditions and dimensions.
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