KP1800A1900-3000V Y65KPH [LIUJING]

KP1800A1900~3000V

Y65KPH

Chinese Type Phase Control Thyristors (Capsule Version)

L i u j in g r e cti fi e r co ., L td .

�½标型

-

普通晶闸管

(

平板式

)

FEATURES

1). Center amplifying gate

2). Metal case with ceramic insulator

3). Low on-state and switching losses

TYPICAL APPLICATIONS

1). AC controllers

2). DC and AC motor control

3). Controlled rectifiers

I

T(AV)

V

DRM

/V

RRM

I

TSM

I

2

t

1897A

1900~3000V

25.0 KA

3125 10

3

A

2

S

THE MAIN PARAMETERS

SYMBOL

I

T(AV)

V

DRM

V

RRM

I

DRM

I

RRM

I

TSM

I

2

t

V

TO

r

T

V

TM

dv/dt

di/dt

I

rm

t

rr

Q

rr

I

GT

V

GT

I

H

V

GD

R

th(j-h)

F

m

T

stg

W

t

Size

CHARACTERISTIC

Mean on-state current

Repetitive peak off-state voltage

Repetitive peak reverse voltage

Repetitive peak off-state current

Repetitive peak reverse current

Surge on-state current

I

2

T for fusing coordination

Threshold voltage

On-state slop resistance

Peak on-state voltage

Critical rate of rise of off-state voltage

Critical rate of rise of on-state current

Reverse recovery current

Reverse recovery time

Recovery charge

Gate trigger current

Gate trigger voltage

Holding current

Non-trigger gate voltage

Thermal resistance

Junction to heatsink

Mounting force

Stored temperature

Weight

Package box size

160

×

145

×

65

O

TEST CONDITIONS

180 half sine wave 50Hz T

hs

=55

℃

Double side cooled,

T

hs

=60

℃

V

DRM

&V

RRM

,tp=10ms

V

DSM

&V

RSM

= V

DRM

&V

RRM

+100V

V

D

= V

DRM

V

R

= V

RRM

10ms half sine wave

V

R

=0.6V

RRM

T

j

(

℃

)

125

125

125

125

125

VALUE

Min Type

Max

1897

1800

UNIT

A

V

mA

KA

A s*10

3

V

m

Ω

V

V/

μ

s

A/

μ

s

A

μ

s

μ

C

mA

V

mA

V

℃

/W

KN

℃

g

mm

1/3

2

1900

3000

120

25

3125

1.05

0.24

2.09

1000

200

200

21

2100

300

3.0

300

0.017

I

TM

=3220A, F=32KN

V

DM

=0.67V

DRM

V

DM

= 67%V

DRM

to2000A,

Gate pulse t

r

≤0.5

μ

s I

GM

=1.5A

I

TM

=1500A,tp=1000

μ

s,

di/dt=-20A/

μ

s,

VR=50V

V

A

=12V, I

A

=1A

V

DM

=67%V

DRM

At 180

°

sine, double side cooled

Clamping force 32KN

125

125

125

125

40

0.8

20

0.3

25

125

27

-40

850

34

140

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KP1800A1900~3000V

PERFORMANCE CURVES FIGURE

Peak On-state Voltage Vs.Peak On-state Current

Transient thermal impedance C/W

Max. junction To heatsink Thermai Impedance Vs.Time

Instantaneous on-state voltage,volts

T

J

=125 C

Instantaneous on-state current,amperes

Time,seconds

Fig.1

Max. Power Dissipation Vs.Mean On-state Current

Fig.2

Max. heatsink Temperature Vs.Mean On-state Current

Max.on-state dissipation ,watts

Conduction Angle

heatsink temperature, C

Conduction Angle

Mean on-state current,amperes

Mean on-state current,amperes

Fig.3

Max. Power Dissipation Vs.Mean On-state Current

360

Fig.4

Max. heatsink Temperature Vs.Mean On-state Current

360

Max.on-state dissipation ,watts

Conduction Angle

heatsink temperature, C

Conduction Angle

Mean on-state current,amperes

Mean on-state current,amperes

Fig.5

Surge Current Vs.Cycles

25

3200

2800

2400

2000

1600

1200

800

Fig.6

2

3125---25

I t Vs.Time

Total peak half-sine surge current,kA

Maximum I

2

t(Kamps

2

,secs)

Cycles at 50Hz

1

Time,m.seconds

10

Fig.7

Fig.8

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2/3

KP1800A1900~3000V

Gate characteristic at 25 C junction temperature

Gate Trigger Zone at varies temperature

-30 C

-10 C

V

25

C

125 C

Gate voltage,V

GT

Gate voltage,V

GT

V

Gate current,I

GT

A

Gate current,I

GT

mA

Fig.9

Fig.10

OUTLINE

E-mail: rectifier@163.com

YUEQING LIUJING RECTIFIER CO., LTD

Sale Departmant: Liujing Building, Yueqing City,

Zhejiang Province

Add: Wanao Industrial Zone, Yueqing city,

Zhejiang Province

Tel: 0086-577-62519692 0089-577-62519693

Fax: 0086-577-62518692

International Export: 0086-577-62571902

Technical Support: 0086-15868768965

After Service: 400-6606-086

http://www.china-liujing.com

http://www.liujingdianqi.cn

http://www.cnrectifier.com

http://www.cnthyristor.com.cn

MSN: thristors@hotmail.com

26 0.5

thyristors@yahoo.cn

打造最具竞争力的电力半导�½�产品

To be the most competitive Power Semiconductor

Devices manufactory.

LIUJING reserves the right to change limits, test conditions and dimensions.

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