S10RIA [LIUJING]
可控硅、晶闸管;
| 型号： | S10RIA |
| 厂家： | 
浙江柳晶整流器有限公司 |
| 描述： | 可控硅、晶闸管 可控硅 |
| 文件： | 总6页 (文件大小：671K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
S10RIA
Medium Power Thyristors
STUD VERSION
Liujing rectifier co., Ltd.
FEATURES
TYPICAL APPLICATIONS
1). Improved glass passivation for high reliability
and exceptional stability at high temperature
2). High di/dt and dv/dt capabilities
3). Standard package
1). Medium power switching
2). Phase control applications
3). Can be supplied to meet stringent military,
aerospace and other high-reliability requirements
4). Low thermal resistance
5). Metric threads version available
6). Types up to 1200V VDRM/ VRRM
MAJOR RATINGS AND CHARACTERISTICS
Parameters
S10RIA
Unit
10
85
A
℃
A
IF(AV)
@ TC
IF(RMS)
25
@ 50Hz
225
A
IFSM
I2t
@ 60Hz
@ 50Hz
@ 60Hz
240
A
255
A2s
A2s
V
233
V
DRM/VRRM
100 to 1200
110
μ
s
Tq
TJ
typical
℃
- 65 to 125
ELECTRICAL SPECIFICATIONS
1). Voltage Ratings
VDRM/VRRM, maximum
repetitive peak
VRSM, maximum non-
IDRM/IRRM max.
Type number
Voltage Code
repetitive peak
@ TJ = TJ max
reverse voltage
reverse voltage
*(1)
*(2)
V
V
mA
20
10
20
100
200
400
600
800
1000
1200
150
300
500
700
900
1100
1300
40
60
S10RIA
10
80
100
120
μ
*(1) Units may be broken over non-repetitively in the off-state direction without damage, if dI/dt does not exceed 20A/
s
*(2) For voltage pulses with tp ≤ 5ms
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S10RIA
2). Forward Conduction
Parameters
S10RIA
Unit
Conditions
Max. average forward current
@ Case temperature
10
85
A
℃
A
°
180 conduction, half sine wave
IT(AV)
IT(RMS) Max. RMS forward current
25
225
240
190
200
255
233
180
165
2550
1.10
1.39
24.3
16.7
1.75
130
200
t = 10ms
t = 8.3ms
t = 10ms
t = 8.3ms
t = 10ms
t = 8.3ms
t = 10ms
t = 8.3ms
No voltage
reapplied
100% VRRM
reapplied
No voltage
reapplied
100% VRRM
reapplied
Max. peak, one-cycle forward,
ITSM
A
non-repetitive surge current
Sinusoidal half wave,
Initial TJ = TJ max.
I2t
Maximum I2t for fusing
A2s
2
I
2
2
√
√
√
t
Maximum I t for fusing
A
s
t = 0.1 to 10ms, no voltage reapplied
π
π
VT(TO)1 Low level value of threshold voltage
VT(TO)2 High level value of threshold voltage
(16.7% x
x IF(AV) < I <
x IF(AV)), TJ = TJ max.
π
x IF(AV)), TJ = TJ max.
V
π
(I >
x IF(AV)), TJ = TJ max.
π
rt1
rt2
Low level value of forward slope resistance
High level value of forward slope resistance
(16.7% x
x IF(AV) < I <
Ω
m
π
(I >
Ipk= 32A, TJ = 25 tp = 10ms sine pulse
x IF(AV)), TJ = TJ max.
℃
VTM Max. forward voltage drop
V
IH
IL
Maximum holding current
Typical latching current
Max. rate of rise of turned-on current
VDRM ≤ 600V
°
TJ = 25 C, anode supply 12V resistive load
mA
200
180
160
150
0.9
4
TJ = TJ max., VDM = rated VDRM Gate pulse = 20V,
μ
Ω
μ
μ
di/dt VDRM ≤ 800V
VDRM ≤ 1000V
A/
s
15 , tp = 6 s, tr = 0.1 s max.
ITM = (2x rated di/dt) A
VDRM ≤ 1600V
℃ ℃
TJ = 25 , at = rated VDRM/VRRM, TJ = 125
tgt
trr
Typical turn-on time
μ
μ
s
Typical reverse recovery time
TJ = TJ max., ITM = IT(AV), tp > 200 s, di/dt = -10A/
μ
μ
TJ = TJ max., ITM = IT(AV), tp > 200 s, VR = 100V,
s
μ
μ
tq
Typical turn-off time
110
di/dt = -10A/ s, dv/dt = 20V/ s linear to 67% VDRM
,
gate bias 0V-100W
Max. critical rate of rise of
off-state voltage
100
TJ = TJ max. linear to 100% rated VDRM
TJ = TJ max. linear to 67% rated VDRM
dv/dt
300 (*)
μ
μ
(*) tq = 10 sup to 600V, tq = 30 s up to 1600V available on special request.
μ
(**) Available with: dv/dt = 1000V/ s, to complete code add S90 i.e. 16RIA120S90.
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S10RIA
3). Triggering
Parameters
S10RIA
8.0
2.0
1.5
10
Unit
W
Conditions
PGM Maximum peak gate power
TJ = TJ max.
PG(AV) Maximum average gate power
IGM Max. peak positive gate current
-VGM Maximum peak negative gate voltage
A
V
TJ = TJ max.
TJ = TJ max.
℃
90
TJ = - 65
Max. required gate trigger current/
voltage are the lowest value which
will trigger all units 6V anode-to-
cathode applied
℃
IGT
DC gate current required to trigger
60
mA
TJ = 25
℃
35
TJ = 125
TJ = - 65
℃
3.0
2.0
1.0
2.0
℃
VGT DC gate voltage required to trigger
V
V
TJ = 25
℃
TJ = 125
IGD
DC gate current not to trigger
mA
TJ = TJ max., VDRM = rated value
Max. gate current/ voltage
TJ = TJ max.
not to trigger is the max.
value which. will not trigger
any unit with rated VDRM
anode-to-cathode applied
VGD DC gate voltage not to trigger
0.2
V
VDRM = rated value
℃
℃
TJ
Max. operating temperature range
Max. storage temperature range
- 65 to 125
- 65 to 125
1.85
T
stg
RthJC Max. thermal resistance, junction to case
RthCS Max. thermal resistance, case to heatsink
K/W DC operation
0.35
K/W Mounting surface, smooth, flat and greased
to nut
to device
25
20(27.5)
0.23(0.32)
2.3(3.1)
lbf-in Lubricated threads
kgf.m (Non-lubricated threads)
Nm
T
Mounting torque
0.29
2.8
wt
Approximate weight
Case style
14 (0.49)
TO-48
g (oz) See Outline Table
Δ
RthJC Conduction
(The following table shows the increment of thermal resistence RthJC when devices operate at different conduction angles than DC)
Conduction angle
Sinusoidal conduction
Rectangular conduction
Units
Conditions
°
°
180
0.44
0.53
0.68
1.01
1.71
0.32
0.56
0.75
1.05
1.73
120
°
90
60
30
K/W
TJ = TJ max.
°
°
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S10RIA
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S10RIA
OUTLINE
Case Style TO-48
E-mail: rectifier@163.com
thyristors@yahoo.cn
YUEQING LIUJING RECTIFIER CO., LTD
Sale Departmant: Liujing Building, Yueqing City,
Zhejiang Province
Add: Wanao Industrial Zone, Yueqing city,
Zhejiang Province
Tel: 0086-577-62519692 0089-577-62519693
Fax: 0086-577-62518692
打造最具竞争力的电力半导体产品
International Export: 0086-577-62571902
Technical Support: 0086-15868768965
After Service: 400-6606-086
To be the most competitive Power Semiconductor
Devices manufactory.
http://www.china-liujing.com
http://www.liujingdianqi.cn
http://www.cnrectifier.com
http://www.cnthyristor.com.cn
MSN: thristors@hotmail.com
LIUJING reserves the right to change limits, test conditions and dimensions.
윤정은 이 칼타로그 중에 데이트, 테스트 조건, 외형사이즈에 대한 최종 해석권을 가지고 있습니다.
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