BC807-16LT1 [LRC]
General Purpose Transistors(PNP Silicon); 通用晶体管（ PNP硅）
| 型号： | BC807-16LT1 |
| 厂家： | 
LESHAN RADIO COMPANY |
| 描述： | General Purpose Transistors(PNP Silicon) |
| 文件： | 总2页 (文件大小：52K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
LESHAN RADIO COMPANY, LTD.
GeneralPurposeTransistors
PNP Silicon
BC807-16LT1
BC807-25LT1
BC807-40LT1
3
COLLECTOR
2
BASE
1
EMITTER
3
MAXIMUM RATINGS
Rating
Symbol
V CEO
V CBO
V EBO
I C
Value
–45
Unit
1
Collector–Emitter Voltage
Collector–Base Voltage
Emitter–Base Voltage
Collector Current — Continuous
V
V
2
–50
CASE 318–08, STYLE 6
SOT–23 (TO–236AB)
–5.0
–500
V
mAdc
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Total Device Dissipation FR– 5 Board, (1)
TA = 25°C
P D
225
1.8
mW
mW/°C
°C/W
Derate above 25°C
Thermal Resistance, Junction to Ambient
Total Device Dissipation
R θJA
P D
556
Alumina Substrate, (2) TA = 25°C
Derate above 25°C
300
2.4
mW
mW/°C
°C/W
Thermal Resistance, Junction to Ambient
Junction and Storage Temperature
R θJA
417
T J , T stg
–55 to +150
°C
DEVICE MARKING
BC807–16LT1 = 5A; BC807–25LT1 = 5B; BC807–40LT1 = 5C
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted.)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Collector–Emitter Breakdown Voltage
(IC = –10 mA)
V (BR)CEO
–45
–50
–5.0
—
—
—
—
—
—
V
V
V
Collector–Emitter Breakdown Voltage
(VEB = 0, I C = –10µA)
V (BR)CES
Emitter–Base Breakdown Voltage
(IE = –1.0 µA)
V (BR)EBO
I CBO
Collector Cutoff Current
(VCB = –20 V)
—
—
—
—
–100
–5.0
nA
(VCB = –20 V, T J = 150°C)
µA
1. FR–5 = 1.0 x 0.75 x 0.062 in.
2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina.
M1–1/2
LESHAN RADIO COMPANY, LTD.
BC807-16LT1 BC807-25LT1 BC807-40LT1
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (Continued)
Characteristic
Symbol
Min
Typ
Max
Unit
ON CHARACTERISTICS
DC Current Gain
h FE
—
(IC= –100 mA, VCE = –1.0 V)
BC807–16
BC807–25
BC807–40
100
160
250
40
—
—
—
—
250
400
600
—
(IC = –500 mA, VCE = –1.0 V)
Collector–Emitter Saturation Voltage
(IC = –500 mA, IB = –50 mA)
V CE(sat)
—
—
—
—
–0.7
–1.2
V
V
Base–Emitter On Voltage
(IC = –500 mA, IB= –1.0 V)
V BE(on)
SMALL–SIGNAL CHARACTERISTICS
Current–Gain — Bandwidth Product
f T
100
—
—
—
—
MHz
pF
(IC = –10 mA, VCE = –5.0 Vdc, f = 100 MHz)
Output Capacitance
C obo
10
(VCB = –10 V, f = 1.0 MHz)
M1–2/2
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