BCW68GLT1 [LRC]
General Purpose Transistors(PNP Silicon); 通用晶体管（ PNP硅）
| 型号： | BCW68GLT1 |
| 厂家： | 
LESHAN RADIO COMPANY |
| 描述： | General Purpose Transistors(PNP Silicon) |
| 文件： | 总2页 (文件大小：53K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
LESHAN RADIO COMPANY, LTD.
GeneralPurposeTransistors
PNP Silicon
BCW68GLT1
3
COLLECTOR
3
1
BASE
1
2
EMITTER
2
MAXIMUM RATINGS
CASE 318–08, STYLE 6
SOT–23 (TO–236AB)
Rating
Symbol
V CEO
V CBO
V EBO
I C
Value
– 45
Unit
Vdc
Collector–Emitter Voltage
Collector–Base Voltage
Emitter–Base Voltage
Collector Current — Continuous
– 60
Vdc
– 5.0
– 800
Vdc
mAdc
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Total Device Dissipation FR– 5 Board, (1)
TA = 25°C
PD
225
1.8
mW
mW/°C
°C/W
Derate above 25°C
Thermal Resistance, Junction to Ambient
Total Device Dissipation
RθJA
PD
556
300
2.4
mW
Alumina Substrate, (2) TA = 25°C
Derate above 25°C
mW/°C
Thermal Resistance, Junction to Ambient
Junction and Storage Temperature
RθJA
417
°C/W
TJ , Tstg
–55 to +150
°C
DEVICE MARKING
BCW68GLT1 = DH
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted.)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Collector–Emitter Breakdown Voltage (IC = –10 mAdc, IB = 0 )
Collector–Emitter Breakdown Voltage (IC = –10 µAdc, VEB = 0 )
Emitter–Base Breakdown Voltage (I E= –10 µAdc, I C = 0)
Collector Cutoff Current
V (BR)CEO
V (BR)CES
V (BR)EBO
I CES
– 45
– 60
– 5.0
—
—
—
—
—
—
Vdc
Vdc
Vdc
(VCE = –45 Vdc, I E= 0 )
—
—
—
—
—
—
– 20
– 10
– 20
nAdc
µAdc
nAdc
(VCE = –45 Vdc, I B= 0 , TA = 150°C)
Emitter Cutoff Current (VEB = – 4.0 Vdc, I C = 0)
1. FR– 5 = 1.0 x 0.75 x 0.062 in.
I EBO
2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina.
M12–1/2
LESHAN RADIO COMPANY, LTD.
BCW68GLT1
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (Continued)
Characteristic
Symbol
Min
Typ
Max
Unit
ON CHARACTERISTICS
DC Current Gain
hFE
—
( IC= –10 mAdc, VCE = –1.0 Vdc )
( IC= –100 mAdc, VCE = –1.0 Vdc )
( IC= –300 mAdc, VCE = –1.0 Vdc )
Collector–Emitter Saturation Voltage
( IC = – 300 mAdc, IB = –30 mAdc )
Base–Emitter Saturation Voltage
( IC = – 500 mAdc, IB = –50 mAdc )
120
160
60
—
—
—
400
—
—
V CE(sat)
V BE(sat)
—
—
—
—
– 1.5
– 2.0
Vdc
Vdc
SMSMALL–SIGNAL CHARACTERISTICS
Current–Gain — Bandwidth Product
(I C = –20mAdc, V CE = –10 Vdc, f = 100 MHz)
Output Capacitance
f T
100
—
—
—
—
MHz
pF
C obo
18
(VCB = – 10 Vdc, I E = 0, f = 1.0 MHz)
Input Capacitance
C ibo
NF
—
—
—
—
105
10
pF
dB
(V EB = –0.5 Vdc, I C = 0, f = 1.0 MHz)
Noise Figure
(V CE = – 5.0 Vdc, I C = – 0.2 mAdc, RS = 1.0 kΩ, f = 1.0 kHz, BW = 200 Hz)
M12–2/2
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