FR156G [LRC]

FAST GPP DIODES; FAST GPP二极管
FR156G
型号: FR156G
厂家: LESHAN RADIO COMPANY    LESHAN RADIO COMPANY
描述:

FAST GPP DIODES
FAST GPP二极管

二极管
文件: 总2页 (文件大小:53K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
LESHAN RADIO COMPANY, LTD.  
FR151G – FR157G  
FAST GPP DIODES  
Maximum Average  
Maximum  
Maximum  
Maximum  
Forward  
Package  
Maximum  
Peak Reverse  
Voltage  
Rectified Current  
@ Half-Wave  
Forward Peak  
Surge Current @  
Reverse  
Current @ PRV  
@ TA=25ºC  
Maximum  
Reverse  
TYPE  
Dimensions  
Voltage  
Resistive Load 60Hz 8.3ms Superimposed  
@ TA=25ºC  
Recovery Time  
PRV  
V PK  
I O @ T L  
AAV ºC  
I FM (Surge)  
A PK  
I
I FM  
V FM  
V PK  
Trr  
ns  
R
µAdc  
A PK  
150  
150  
150  
150  
250  
500  
500  
FR151G  
FR152G  
FR153G  
FR154G  
FR155G  
FR156G  
FR157G  
50  
100  
200  
400  
600  
800  
1000  
1.5  
55  
30  
5.0  
1.0  
1.3  
DO – 15  
Trr  
I F = 0.5A, I R = 1.0A, I RR = 0.25A  
Trr Test Conditions: I F = 0.5A, I R = 1.0A, I RR = 0.25A  
1.0(25.4)  
MIN  
.300(7.6)  
.230(5.8)  
1.0(25.4)  
MIN  
.034(0.9)  
.028(0.7)  
DIA  
.140(3.6)  
.104(2.6)  
DIA  
DO – 15  
39A–1/2  
LESHAN RADIO COMPANY, LTD.  
FR151G-FR157G  
GPP  
RATING & CHARACTERISTIC CURVES OF FAST GPP DIODE  
FIG.1–TEST CIRCUIT DIAGRAM AND  
FIG. 2 – TYPICAL FORWARD  
CURRENT DERATING CURVE  
REVERSE RECOVERY TIME CHARACTERISTIC  
1.50  
50  
10 Ω  
Single Phase  
Trr  
Half Wave 60Hz  
1.25  
NONINDUCTIVE  
NONINDUCTIVE  
+0.5A  
Resistive or  
Inductive Load  
1.00  
(-)  
D.U.T.  
(+)  
25Vdc  
(APPROX)  
(-)  
PULSE  
G E N E R ATO R  
( N O T E 2 )  
0
.75  
.50  
.25  
0
-0.25A  
1Ω  
N O N .  
OSCILLOSCOPE  
(NOTE 1)  
(+)  
INDUCTIVE  
NOTES:1.Rise Time=7ns max.  
-1.0A  
1cm  
Input Impedance=1megohm.22pF.  
SET TIME  
BASE FOR 50/100ns/cm  
25  
50  
75  
100 125  
150  
175  
2.Rise Time=10ns max.  
AMBIENT TEMPER ATURE, (ºC)  
Source Impedance=50 ohms.  
FIG. 3 – TYPICAL INSTANTANEOUS  
FORWARD CHARACTERISTICS  
10  
1.0  
TJ =25ºC  
0.1  
Pulse Width=300µs  
1% Duty Cycle  
0.01  
.4  
.6  
.8  
1.0  
1.2  
1.4  
1.6  
INSTANTANEOUS FORWARD VOLTAGE,(V)  
FIG. 4 – MAXINUM NON-REPETITIVE  
FOWARD SURGE CURRENT  
FIG. 5 – TYPICAL JUNCTION CAPACITANCE  
200  
60  
50  
40  
30  
20  
10  
0
100  
8.3ms Single Half Sine-Wave  
(JEDEC Method)  
60  
40  
20  
10  
TJ =25ºC  
6
4
2
1
.1  
.2  
.4  
1.0  
2
4
10 20  
40  
100  
1
5
10  
50  
100  
REVERSE VOLTAGE,(V)  
NUMBER OF CYCLES AT 60Hz  
39A–2/2  

相关型号:

FR156G-B

Rectifier Diode, 1 Phase, 1 Element, 1.5A, 800V V(RRM), Silicon, DO-15, PLASTIC PACKAGE-2
RECTRON

FR156G-T

Rectifier Diode, 1 Phase, 1 Element, 1.5A, 800V V(RRM), Silicon, DO-15, PLASTIC PACKAGE-2
RECTRON

FR156GH11

Rectifier Diode, 1 Phase, 1 Element, 1.5A, 800V V(RRM), Silicon, DO-15,
RECTRON

FR156GH12

Rectifier Diode, 1 Phase, 1 Element, 1.5A, 800V V(RRM), Silicon, DO-15,
RECTRON

FR156GH14

Rectifier Diode, 1 Phase, 1 Element, 1.5A, 800V V(RRM), Silicon, DO-15,
RECTRON

FR156GH15

Rectifier Diode, 1 Phase, 1 Element, 1.5A, 800V V(RRM), Silicon, DO-15,
RECTRON

FR156GH17

Rectifier Diode, 1 Phase, 1 Element, 1.5A, 800V V(RRM), Silicon, DO-15,
RECTRON

FR156GM12

Rectifier Diode, 1 Phase, 1 Element, 1.5A, 800V V(RRM), Silicon, DO-15,
RECTRON

FR156GM13

Rectifier Diode, 1 Phase, 1 Element, 1.5A, 800V V(RRM), Silicon, DO-15,
RECTRON

FR156GM14

Rectifier Diode, 1 Phase, 1 Element, 1.5A, 800V V(RRM), Silicon, DO-15,
RECTRON

FR156GM15

Rectifier Diode, 1 Phase, 1 Element, 1.5A, 800V V(RRM), Silicon, DO-15,
RECTRON

FR156GM16

Rectifier Diode, 1 Phase, 1 Element, 1.5A, 800V V(RRM), Silicon, DO-15,
RECTRON