HER101G [LRC]
1A HIGH EFFICIENCY GPP DIODES; 1A高效率GPP二极管
| 型号： | HER101G |
| 厂家： | 
LESHAN RADIO COMPANY |
| 描述： | 1A HIGH EFFICIENCY GPP DIODES |
| 文件： | 总2页 (文件大小：62K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
LESHAN RADIO COMPANY, LTD.
HER101(G) – HER108(G)
1A
1A HIGH EFFICIENCY GPP DIODES
Maximum Average
Rectified Current
@ Half-Wave
Maximum Forward
Peak Surge Current
@ 8.3ms
Maximum
Package
Maximum
Reverse
Maximum
Peak Reverse
Voltage
Maximum
Forward
Voltage
TYPE
Dimensions
Reverse Current
@ PRV @ TA=25ºC
Recovery Time
Resistive Load 60Hz
Superimposed
@ TA=25ºC
PRV
V PK
I O @ T L
I FM (Surge)
A PK
IR
I FM
V FM
V PK
Trr
ns
AAV
ºC
µAdc
A PK
HER101(G) 50
HER102(G) 100
HER103(G) 200
HER104(G) 300
HER105(G) 400
HER106(G) 600
HER107(G) 800
HER108(G) 1000
1.00
1.00
1.00
1.30
1.30
1.85
1.85
1.85
DO – 41
1.0
50
30
5.0
1.0
50
70
Trr
I F=0.5A, I R=1.0A, I RR=0.25A
Trr Test Conditions: I F=0.5A, I R=1.0A, I RR=0.25A
.205(5.2)
.166(4.2)
1.0(25.4)
MIN
1.0(25.4)
MIN
.034(0.9)
.028(0.7)
DIA
.107(2.7)
DIA
.080(2.0)
DO – 41
41A–1/2
LESHAN RADIO COMPANY, LTD.
HER101(G) – HER108(G)
1A
1A RATING & CHARACTERISTIC CURVES OF HIGH EFFICIENCY GPP DIODES
FIG.1-TEST CIRCUIT DIAGRAM AND
FIG. 2 - TYPICAL FORWARD
REVERSE RECOVERY TIME CHARACTERISTIC
CURRENT DERATING CURVE
2.0
50 Ω
10 Ω
Trr
NONINDUCTIVE
NONINDUCTIVE
Single Phase
+0.5A
Half Wave 60Hz
Resistive or
(-)
Inductive Load
D.U.T.
(+)
25Vdc
(APPROX)
(-)
PULSE
G E N E R ATO R
( N O T E 2 )
0
1.0
-0.25A
1Ω
OSCILLOSCOPE
(NOTE 1)
N O N .
INDUCTIVE
(+)
0
NOTES:1.Rise Time=7ns max.
-1.0A
0
50
100
150 175
1cm
Input Impedance=1megohm.22pF.
SET TIME
BASE FOR 10 ns/cm
2.Rise Time=10ns max.
Source Impedance=50 ohms.
AMBIENT TEMPER ATURE, (ºC)
FIG. 4 - TYPICAL INSTANTANEOUS
FORWARD CHARACTERISTICS
FIG. 3 - TYPICAL REVERSE
CHARACTERISTICS
10.0
1.0
.1
100
10
TJ =150ºC
TJ =100 ºC
1.0
0.1
.01
TJ =25 ºC
.01
.001
TJ =25ºC
Pulse Width=300µs
1% Duty Cycle
20
40
60
80
100
120
.2
.4
.6
.8
1.0
1.2
1.4
1.6
1.8
PERCENT OF RATED PEAK REVERSE VOLTAGE, (%)
INSTANTANEOUS FORWARD VOLTAGE,(V)
FIG. 5 - MAXINUM NON-REPETITIVE
FOWARD SURGE CURRENT
FIG. 6 - TYPICAL JUNCTION CAPACITANCE
200
50
40
30
20
10
0
100
8.3ms Single Half Sine-Wave
(JEDEC Method)
60
40
20
10
TJ = 25ºC
6
4
2
1
.1
.2
.4
1.0
2
4
10 20
40
100
1
2
4
6
8
10
20
40
60 80 100
NUMBER OF CYCLES AT 60Hz
REVERSE VOLTAGE,(V)
41A–2/2
相关型号：
HER101G-AP
Rectifier Diode, 1 Element, 1A, 50V V(RRM), Silicon, DO-41, ROHS COMPLIANT, PLASTIC, PACKAGE-2
MCC
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