概述
规格参数
数据手册L2SA1774QT3G 概述
General Purpose Transistors PNP Silicon 通用晶体管PNP硅 小信号双极晶体管
L2SA1774QT3G 规格参数
| 是否Rohs认证： | 符合 | 生命周期： | Contact Manufacturer |
| 包装说明： | , | Reach Compliance Code： | unknown |
| 风险等级： | 5.72 | Is Samacsys： | N |
| 最大集电极电流 (IC)： | 0.15 A | 配置： | Single |
| 最小直流电流增益 (hFE)： | 120 | 最高工作温度： | 150 °C |
| 极性/信道类型： | PNP | 最大功率耗散 (Abs)： | 0.15 W |
| 子类别： | Other Transistors | 表面贴装： | YES |
| Base Number Matches： | 1 |
L2SA1774QT3G 数据手册
通过下载L2SA1774QT3G数据手册来全面了解它。这个PDF文档包含了所有必要的细节，如产品概述、功能特性、引脚定义、引脚排列图等信息。
PDF下载LESHAN RADIO COMPANY, LTD.
General Purpose Transistors
PNP Silicon
L2SA1774QT1G
Series
We declare that the material of product compliance with RoHS requirements.
z
z
DEVICE MARKING AND ORDERING INFORMATION
Shipping
Device
Marking
3000/Tape&Reel
FQ
L2SA1774QT1G
10000/Tape&Reel
3000/Tape&Reel
10000/Tape&Reel
3000/Tape&Reel
10000/Tape&Reel
L2SA1774QT3G
L2SA1774RT1G
L2SA1774RT3G
L2SA1774ST1G
FQ
FR
FR
SC-89
FS
FS
COLLECTOR
3
L2SA1774ST3G
1
!Absolute maximum ratings (Ta=25°C)
BASE
2
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Symbol
Limits
−60
Unit
EMITTER
VCBO
V
CEO
VEBO
V
V
−50
−6
V
IC
−0.15
A (DC)
Collector power
dissipation
P
C
0.15
150
W
Tj
˚C
˚C
Junction temperature
Storage temperature
Tstg
−
55~+150
!Electrical characteristics (Ta=25°C)
Parameter
Symbol Min.
Typ. Max.
Unit
V
Conditions
BV
CBO
CEO
EBO
−60
−50
−6
−
−
−
−
−
I
I
I
C
=
=
−50µA
−1µA
Collector-base breakdown voltage
V
C
Collector-emitter breakdown voltage BV
BV
−
−
V
E=
−50µA
Emitter-base breakdown voltage
Collector cutoff current
I
CBO
EBO
−
−0.1
−0.1
−0.5
560
−
µA
µA
V
V
V
CB
=−60V
I
−
−
EB
=
−6V
Emitter cutoff current
V
CE(sat)
FE
−
−
IC
/I
B
=
−50mA/−5mA
Collector-emitter saturation voltage
DC current transfer ratio
Transition frequency
h
120
−
−
−
V
V
V
CE
CE
CB
=
=
=
−6V, I −1mA
C
=
f
T
140
4.0
MHz
pF
−12V, I
−12V, I
E
=
=
2mA, f
=30MHz
Cob
−
5.0
E
0A, f 1MHz
=
Output capacitance
hFE values are classified as follows:
!
Item
Q
R
S
h
FE
120~270
180~390
270~560
Rev.O 1/3
LESHAN RADIO COMPANY, LTD.
L2SA1774QT1G
Series
!Electrical characteristic curves
−35.0
−100
−80
−50
−10
−8
CE
=−6V
V
Ta=25˚C
Ta=25˚C
Ta=100˚C
25˚C
−40˚C
−31.5
−28.0
−24.5
−21.0
−17.5
−14.0
−10.5
−7.0
−20
−10
−500
−450
−400
−350
−300
−5
−250
−200
−60
−40
−20
−6
−4
−2
−2
−1
−150
−100
−0.5
−50µA
−3.5µA
−0.2
−0.1
B=0
I
IB=0
−0.4 −0.6 −0.8 −1.0 −1.2 −1.4 −1.6
0
−0.4
−0.8
−1.2
−1.6
−2.0
−0.2
0
−1
−2
−3
−4
−5
V)
COLLECTOR TO EMITTER VOLTAGE : VCE
(
BASE TO EMITTER VOLTAGE : VBE
(
V)
COLLECTOR TO MITTER VOLTAGE : VCE
(
V)
Fig.2 Grounded emitter output
characteristics (I)
Fig.3 Grounded emitter output
characteristics (II)
Fig.1 Grounded emitter propagation
characteristics
500
−1
500
Ta=25˚C
Ta=100˚C
25˚C
V
CE=−5V
Ta=25˚C
−3V
−1V
−0.5
−40˚C
200
100
50
200
100
−0.2
−0.1
I
C
/I
B
=
50
20
10
50
−0.05
V
CE=−6V
−0.2 −0.5 −1 −2
−5 −10 −20 −50 −100
−0.2 −0.5 −1 −2
−5 −10 −20 −50 −100
mA)
−0.2 −0.5 −1 −2
−5 −10 −20 −50 −100
mA)
COLLECTOR CURRENT : I
mA)
C (
COLLECTOR CURRENT : I
C
(
COLLECTOR CURRENT : I
C
(
Fig.5 DC current gain vs.
collector current (II)
Fig.4 DC current gain vs.
collector current (I)
Fig.6 Collector-emitter saturation
voltage vs. collector current (I)
20
1000
500
−1
lC
/lB
=10
Ta=25˚C
CE=−12V
Ta=25˚C
f=1MHz
V
I
E
=
IC=
0A
0A
−0.5
10
5
200
100
−0.2
−0.1
Ta=100˚C
25˚C
−40˚C
2
−0.05
50
−0.5 −1
−2
−5
−10 −20
0.5
1
2
5
10 20
50 100
−0.2 −0.5 −1 −2
−5 −10 −20 −50 −100
mA)
COLLECTOR TO BASE VOLTAGE : VCB (V)
EMITTER TO BASE VOLTAGE : VEB (V)
EMITTER CURRENT : I (
E
mA)
COLLECTOR CURRENT : I
C
(
Fig.9 Collector output capacitance vs.
collector-base voltage
Fig.7 Collector-emitter saturation
voltage vs. collector current (II)
Fig.8 Gain bandwidth product vs.
emitter current
Emitter inputcapacitance vs.
emitter-base voltage
Rev.O 2/3
LESHAN RADIO COMPANY, LTD.
L2SA1774QT1G
Series
SC-89
A
-X-
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: MILLIMETERS
3. MAXIMUM LEAD THICKNESS INCLUDES LEAD
FINISH THICKNESS. MINIMUM LEAD THICKNESS
IS THE MINIMUM THICKNESS OF BASE
MATERIAL.
3
S
B
-Y-
1
2
4. 463C-01 OBSOLETE, NEW STANDARD 463C-02.
K
MILLIMETERS
NOM
INCHES
NOM
G
2 PL
DIM MIN
MAX
1.70
0.95
0.80
0.33
MIN
0.059
0.030
0.024
0.009
MAX
0.067
0.040
0.031
0.013
A
B
C
D
G
H
J
1.50
1.60
0.85
0.063
0.034
3 PL
D
0.75
0.60
0.23
M
0.70
0.28
0.028
0.011
0.08 (0.003)
X Y
0.50 BSC
0.53 REF
0.15
0.020 BSC
0.021 REF
0.006
0.10
0.30
0.20
0.50
0.004
0.012
0.008
0.020
K
L
0.40
0.016
1.10 REF
−−−
−−−
0.043 REF
−−−
−−−
M
N
S
−−−
−−−
10
10
−−−
−−−
10
10
_
_
N
M
_
_
J
1.50
1.60
1.70
0.059
0.063
0.067
C
SEATING
PLANE
-T-
H
H
L
G
RECOMMENDED PATTERN
OF SOLDER PADS
Rev.O 3/3
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