L2SB882P [LRC]
PNP SURFACE MOUNT TRANSISTOR;
| 型号： | L2SB882P |
| 厂家： | 
LESHAN RADIO COMPANY |
| 描述： | PNP SURFACE MOUNT TRANSISTOR |
| 文件： | 总2页 (文件大小：137K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
LESHAN RADIO COMPANY, LTD.
PNP SURFACE MOUNT TRANSISTOR
L2SB882Q
L2SB882P
ƽ
We declare that the material of product compliance with RoHS requirements.
4
1
2
3
DEVICE MARKING AND ORDERING INFORMATION
SOT-89
Device
Marking
Shipping
L2SB882Q
82Q
2500/Tape&Reel
2,4
2500/Tape&Reel
L2SB882P
82P
COLLECTOR
1
MAXIMUM RATINGS(Ta=25qC)
BASE
Parameter
Symbol
Limits
Unit
V
3
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
V
CBO
VCEO
VEBO
40
EMITTER
30
V
6
V
Peak Pulse Current
I
CM
3
0.5
A
P
C
W
°C
°C
Collector power dissipation
Junction temperature
Storage temperature
Tj
150
Tstg
−55 to 150
ELECTRICAL CHARACTERISTICS(Ta=25qC)
Parameter
Symbol Min.
Typ.
Max.
Unit
Conditions
BVCBO
BVCEO
BVEBO
40
30
6
−
−
−
−
−
−
V
V
V
I
I
I
C
= 100
= 10mA
= 100
µ
A
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
C
−
E
µ
A
I
I
I
CBO
−
1
µ
A
A
A
V
V
V
CB= 40V
CB= 30V
EB= 6V
CEO
EBO
−
−
−
−
−
−
−
10
1
µ
µ
Collector cutoff current
Emitter cutoff current
V
V
CE(sat)
BE(sat)
−
0.5
1.5
320
V
I
I
C
/I
B
=2A/0.2A
=2A/0.2A
Collector-emitter saturation voltage
Base-emitter saturation voltage
−
V
−
/I
C B
h
FE(1)
FE
100
V
V
V
CE=2V, I
CE=2V, I
C
=1A
DC current transfer ratio
DC current transfer ratio
Transition frequency
h
32
50
−
−
−
−
−
C
=100mA
f
T
MHz
CE= 5V, I =0.1A, f =10MHz
E
hFE(1) values are classified as follows :
Item(*)
Q
P
hFE
100~200
160~320
Rev.O 1/2
LESHAN RADIO COMPANY, LTD.
L2SB882Q
L2SB882P
SOT-89
Unit: mm
D1
C
SOT89-3L
Dim Min Max Typ
A
B
1.40 1.60 1.50
0.45 0.55 0.50
0.37 0.47 0.42
0.35 0.43 0.38
4.40 4.60 4.50
1.50 1.70 1.60
2.40 2.60 2.50
E
H
B1
C
L
B
D
e
B1
D1
E
e
—
—
1.50
A
H
3.95 4.25 4.10
0.90 1.20 1.05
L
All Dimensions in mm
D
1.7
2.7
0.4
1.9
1.3
0.9
3.0
Rev.O 2/2
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