L2SC5343SLT3G [LRC]

General Purpose Transistors NPN Silicon;
L2SC5343SLT3G
型号: L2SC5343SLT3G
厂家: LESHAN RADIO COMPANY    LESHAN RADIO COMPANY
描述:

General Purpose Transistors NPN Silicon

文件: 总4页 (文件大小:354K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
LESHAN RADIO COMPANY, LTD.  
General Purpose Transistors  
NPN Silicon  
L2SC5343QLT1G  
Series  
FEATURE  
3
ƽ
Excellent hFE linearity  
:hFE(2)=100(Typ) at VCE=6V,IC=150Ma  
:hFE(IC=0.1mA)/hFE(IC=2mA)=0.95(Typ).  
1
2
z Low noise:NF=1Db(Typ).at f=1KHz.  
SOT– 23  
ƽWe declare that the material of product compliance with RoHS requirements.  
DEVICE MARKING AND ORDERING INFORMATION  
COLLECTOR  
3
Device  
Marking  
Shipping  
L2SC5343QLT1G  
7Q  
3000/Tape&Reel  
L2SC5343QLT3G  
L2SC5343RLT1G  
7Q  
7R  
10000/Tape&Reel  
3000/Tape&Reel  
1
BASE  
2
EMITTER  
7R  
7S  
7S  
10000/Tape&Reel  
3000/Tape&Reel  
10000/Tape&Reel  
L2SC5343RLT3G  
L2SC5343SLT1G  
L2SC5343SLT3G  
MAXIMUM RATINGS  
Rating  
Symbol  
Value  
Unit  
Collector-Emitter Voltage  
VCEO  
50  
V
Collector-Base Voltage  
Emitter-Base Voltage  
VCBO  
VEBO  
60  
5
V
V
Collector current-continuoun  
Collector current-continuoun  
Collector Dissipation  
IC  
IB  
150  
50  
mA  
mA  
P
C
200  
mW  
Junction and Storage Temperature Tj, Tstg  
-55~150  
Rev.O 1/4  
LESHAN RADIO COMPANY, LTD.  
L2SC5343QLT1G Series  
ELECTRICAL CHARACTERISTICS (TA=25oC unless otherwise noted)  
Parameter  
Symbol  
Test conditions  
MIN  
60  
50  
5
TYP MAX UNIT  
Collector-base breakdown voltage  
V(BR)CBO  
V(BR)CEO  
V(BR)EBO  
ICBO  
IC=100μA,IE=0  
IC=10mA,IB=0  
IE=10μA,IC=0  
VCB=60V,IE=0  
VEB=5V,IC=0  
V
V
V
Collector-emitter breakdown  
voltage  
Emitter-base breakdown voltage  
Collector cut-off current  
0.1  
μA  
μA  
Emitter cut-off current  
DC current gain  
IEBO  
0.1  
hFE  
VCE=6V,IC=1mA  
120  
80  
560  
0.25  
Collector-emitter saturation  
voltage  
IC=100mA, IB=10mA  
VCE(sat)  
0.1  
V
Transition frequency  
Output capacitance  
Noise Figure  
VCE=10V, IC= 1mA  
fT  
MHz  
pF  
VCB=10V, IE=0,f=1kHz  
VCE=6V,IC=0.1mA,f=1kHz  
Cob  
NF  
3.5  
10  
dB  
CLASSIFICATION OF hFE  
Rank  
Q
R
S
120-270  
180-390  
270-560  
Range  
Rev.O 2/4  
LESHAN RADIO COMPANY, LTD.  
L2SC5343QLT1G Series  
Electrical Characteristic Curves  
Fig. 2 IC -VBE  
Fig. 1 PC –Ta  
Fig. 4 hFE -IC  
Fig. 3 IC -VCE  
Fig. 5 VCE(sat) -IC  
Rev.O 3/4  
LESHAN RADIO COMPANY, LTD.  
L2SC5343QLT1G Series  
SOT-23  
NOTES:  
A
1. DIMENSIONING AND TOLERANCING PER ANSI  
L
Y14.5M, 1982.  
2. CONTROLLING DIMENSION: INCH.  
3
S
B
1
2
INCHES  
MAX  
MILLIMETERS  
DIM  
MIN  
MIN  
2.80  
1.20  
0.89  
0.37  
1.78  
0.013  
0.085  
0.35  
0.89  
2.10  
0.45  
MAX  
3.04  
1.40  
1.11  
0.50  
2.04  
0.100  
0.177  
0.69  
1.02  
2.64  
0.60  
V
G
A
B
C
D
G
H
J
0.1102  
0.0472  
0.0350  
0.0150  
0.0701  
0.0005  
0.0034  
0.0140  
0.0350  
0.0830  
0.0177  
0.1197  
0.0551  
0.0440  
0.0200  
0.0807  
0.0040  
0.0070  
0.0285  
0.0401  
0.1039  
0.0236  
C
H
J
D
K
L
K
S
V
PIN 1. BASE  
2. EMITTER  
3. COLLECTOR  
0.037  
0.95  
0.037  
0.95  
0.079  
2.0  
0.035  
0.9  
0.031  
0.8  
inches  
mm  
Rev.O 4/4  

相关型号:

L2SC5635LT1G

High-Frequency Amplifier Transistor High gain,low noise
LRC

L2SC5635LT3G

High-Frequency Amplifier Transistor High gain,low noise
LRC

L2SC5635WT1G

High-Frequency Amplifier Transistor Can operate at low voltage
LRC

L2SC5635WT3G

High-Frequency Amplifier Transistor Can operate at low voltage
LRC

L2SC5658M3T5G

General Purpose Amplifier NPN Silicon Transistor
LRC

L2SC5658QM3T5G

NPN Silicon General Purpose Amplifier Transistor
LRC

L2SC5658QM3T5G_15

NPN Silicon General Purpose Amplifier Transistor
LRC

L2SC5658RM3T5G

NPN Silicon General Purpose Amplifier Transistor
LRC

L2SD1781KLT1

Medium Power Transistor(32V, 0.8A)
LRC

L2SD1781KQLT1

Medium Power Transistor(32V, 0.8A)
LRC

L2SD1781KQLT1G

Medium Power Transistor(32V, 0.8A)
LRC

L2SD1781KQLT1G_11

Medium Power Transistor (32V, 0.8A) High current capacity in compact
LRC