L4501DW1T1G [LRC]

Silicon NPN Epitaxial Planer Transistor; NPN硅外延平面晶体管
L4501DW1T1G
型号: L4501DW1T1G
厂家: LESHAN RADIO COMPANY    LESHAN RADIO COMPANY
描述:

Silicon NPN Epitaxial Planer Transistor
NPN硅外延平面晶体管

晶体 晶体管
文件: 总3页 (文件大小:163K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
LESHAN RADIO COMPANY, LTD.  
Silicon NPN Epitaxial Planer  
Transistor  
L4501DW1T1  
6
5
4
Feature  
1
Pb-Free Package is available.  
2
3
SC-88/SOT-363  
MAXIMUM RATINGS  
Parameter  
Symbol  
Ratings  
Unit  
Collector-Emitter Voltage  
VCEO  
50  
V
Collector-Base Voltage  
Emitter-Base Voltage  
VCBO  
VEBO  
IC  
60  
7
V
V
Collector current-continuoun  
150  
mAdc  
THERMAL CHARATEERISTICS  
Characteristic  
Symbol  
Max  
Unit  
Total Device Dissipation FR-5 Board, (1)  
TA=25oC  
PD  
380  
328  
-55 to +150  
mW  
oC/W  
oC  
Thermal Resistance, Junction to Ambient  
Junction and Storage Temperature  
DEVICE MARKING  
L4501DW1T1=5H  
R
JA  
Tj ,Tstg  
ELECTRICAL CHARACTERISTICS (TA=25oC unless otherwise noted)  
Characteristic  
Symbol  
Min  
Typ  
Max  
Unit  
OFF CHARACTERISTICS  
Collector-Emitter Breakdown Voltage  
(IC=1mA)  
V(BR)CEO  
V(BR)EBO  
V(BR)CBO  
50  
7
-
-
-
V
Emitter-Base Breakdown Voltage  
(IE=50 A)  
Collector-Base Breakdown Voltage  
(IC=50 A)  
-
-
V
V
60  
-
Collector Cutoff Current  
(VCB=60V)  
ICBO  
-
-
0.1  
A
L4501DW1T1-1/3  
LESHAN RADIO COMPANY, LTD.  
L4501DW1T1  
EMITTER CUTOFF CURRENT  
VEB=7V  
IEBO  
-
-
0.1  
A
ON CHARACTERISTICS  
DC Current Gain  
(IC=1mA, VCE=6.0V)  
Collector-Emitter Saturation Voltage  
(IC=50mA,IB=5mA)  
Hfe  
120  
-
-
-
560  
VCE(SAT)  
0.4  
V
SMALL-SIGNAL CHARACTERISTICS  
Current-Gain-Bandwidth Product  
(VCE = 12.0V; IE =-2.0 mA,f=100MHZ)  
Ft  
-
-
180  
2
-
MHz  
Pf  
Output Capacitance(VCE=12V,f=1.0MHz)  
Cobo  
3.5  
ORDERING INFORMATION  
Device  
L4501DW1T1  
L4501DW1T1G  
Marking  
Shipping  
5H  
3000/Tape&Reel  
3000/Tape&Reel  
5H (Pb-Free)  
L4501DW1T1-2/3  
LESHAN RADIO COMPANY, LTD.  
L4501DW1T1  
SC-88/SOT-363  
NOTES:  
1. DIMENSIONING AND TOLERANCING PER ANSI  
Y14.5M, 1982.  
A
2. CONTROLLING DIMENSION: INCH.  
G
INCHES  
MAX  
MILLIMETERS  
DIM  
MIN  
MIN  
1.80  
1.15  
0.80  
0.10  
MAX  
2.20  
6
5
4
A
B
C
D
G
H
J
0.071  
0.045  
0.031  
0.004  
0.087  
0.053  
0.043  
0.012  
1.35  
-B-  
S
1.10  
1
2
3
0.30  
0.026 BSC  
0.65 BSC  
0.10  
---  
0.004  
0.010  
0.012  
---  
M
M
0.2 (0.008)  
N
B
D6PL  
0.004  
0.004  
0.10  
0.10  
0.25  
K
N
S
0.30  
0.008 REF  
0.20 REF  
2.20  
0.079  
0.087  
2.00  
J
C
PIN 1. EMITTER 1  
2. BASE 1  
K
H
3. COLLECTOR 2  
4.EMITTER 2  
5. BASE 2  
6.COLLECTOR 1  
0.5 mm (min)  
1.9 mm  
L4501DW1T1-3/3  

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