L8050HQLT1G [LRC]

General Purpose Transistors NPN Silicon; 通用晶体管NPN硅
L8050HQLT1G
元器件型号: L8050HQLT1G
生产厂家: LESHAN RADIO COMPANY    LESHAN RADIO COMPANY
描述和应用:

General Purpose Transistors NPN Silicon
通用晶体管NPN硅

晶体晶体管
PDF文件: 总3页 (文件大小:52K)
下载文档:  下载PDF数据表文档文件
型号参数:L8050HQLT1G参数
是否Rohs认证 符合
生命周期Contact Manufacturer
包装说明,
Reach Compliance Codeunknown
ECCN代码EAR99
风险等级5.73
最大集电极电流 (IC)1.5 A
配置Single
最小直流电流增益 (hFE)150
最高工作温度150 °C
峰值回流温度(摄氏度)NOT SPECIFIED
极性/信道类型NPN
最大功率耗散 (Abs)0.3 W
子类别Other Transistors
表面贴装YES
处于峰值回流温度下的最长时间NOT SPECIFIED
Base Number Matches1
MAX34334CSE前5页PDF页面详情预览
LESHAN RADIO COMPANY, LTD.
General Purpose Transistors
NPN Silicon
FEATURE
High current capacity in compact package.
I
C
=1.5A.
Epitaxial planar type.
PNP complement: L8550H
Pb-Free Package is available.
L8050H*LT1
3
1
2
SOT–23
COLLECTOR
3
1
BASE
2
EMITTER
DEVICE MARKING AND ORDERING INFORMATION
Device
L8050HPLT1
L8050HPLT1G
L8050HQLT1
L8050HQLT1G
Marking
1HA
1HA
(Pb-Free)
1HC
1HC
(Pb-Free)
Shipping
3000/Tape&Reel
3000/Tape&Reel
3000/Tape&Reel
3000/Tape&Reel
MAXIMUM RATINGS
Rating
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current-continuoun
Symbol
V
CEO
V
CBO
V
EBO
I
C
Max
25
40
5
1500
Unit
V
V
V
mAdc
THERMAL CHARACTERISTICS
Characteristic
Total Device Dissipation FR-5 Board,(1)
T
A
=25°C
Derate above 25°C
Thermal Resistance,Junction to Ambient
Total Device Dissipation
Alumina Substrate,(2) TA=25°C
Derate above 25°C
Thermal Resistance,Junction to Ambient
Junction and Storage Temperature
R
θ
J A
T
j,
T
S
t
g
R
θ
J A
P
D
300
2.4
417
-55 to +150
mW
mW/°C
°C/W
°C
Symbol
P
D
Max
Unit
225
1.8
556
mW
mW/°C
°C/W
Version 1.1
L8050H*LT1-1/3
LESHAN RADIO COMPANY, LTD.
L8050H*LT1
ELECTRICAL CHARACTERISTICS (T
A
=25°C unless otherwise noted)
Characteristic
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage
V
(BR)CEO
(I
C
=1.0mA)
Emitter-Base Breakdown Voltage
V
(BR)EBO
(I
E
=100µΑ)
Collector-Base Breakdown Voltage
V
(BR)CBO
(I
C
=100µΑ)
Collector Cutoff Current (V
CB
=35V)
Emitter Cutoff Current (V
EB
=4V)
I
CBO
I
EBO
150
150
nA
nA
40
V
5
V
25
V
Symbol
Min
Typ
Max
Unit
ELECTRICAL CHARACTERISTICS (T
A
=25°C unless otherwise noted)
Characteristic
ON CHARACTERISTICS
DC Current Gain
I
C
=100mA,V
CE
=1V
h
FE
120
-
600
Symbol
Min
Typ
Max
Unit
Collector-Emitter Saturation Voltage
(I
C
=800mA I
B
=80mA)
V
CE(S)
-
-
0.5
V
NOTE :
*
h
F E
P
120~200
Q
150~300
R
200~400
S
300~600
Version 1.1
L8050H*LT1-2/3
LESHAN RADIO COMPANY, LTD.
L8050H*LT1
SOT-23
NOTES:
A
L
3
1
V
G
2
B S
DIM
A
B
C
D
G
H
C
D
H
K
J
J
K
L
S
V
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M,1982
2. CONTROLLING DIMENSION: INCH.
INCHES
MIN
MAX
0.1102
0.0472
0.0350
0.0150
0.0701
0.0005
0.0034
0.0140
0.0350
0.0830
0.0177
0.1197
0.0551
0.0440
0.0200
0.0807
0.0040
0.0070
0.0285
0.0401
0.1039
0.0236
MILLIMETERS
MIN
MAX
2.80
1.20
0.89
0.37
1.78
0.013
0.085
0.35
0.89
2.10
0.45
3.04
1.40
1.11
0.50
2.04
0.100
0.177
0.69
1.02
2.64
0.60
PIN 1. BASE
2. EMITTER
3. COLLECTOR
0.037
0.95
0.037
0.95
0.079
2.0
0.035
0.9
0.031
0.8
inches
mm
Version 1.1
L8050H*LT1-3/3
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