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L8050HQLT1G

更新时间：2025-06-29 11:59:08

品牌：LRC

描述：General Purpose Transistors NPN Silicon

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免费 PCB/SMT

概述
规格参数
数据手册

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L8050HQLT1G 概述

General Purpose Transistors NPN Silicon 通用晶体管NPN硅小信号双极晶体管

L8050HQLT1G 规格参数

是否Rohs认证：	符合	生命周期：	Contact Manufacturer
包装说明：	,	Reach Compliance Code：	unknown
ECCN代码：	EAR99	风险等级：	5.73
最大集电极电流 (IC)：	1.5 A	配置：	Single
最小直流电流增益 (hFE)：	150	最高工作温度：	150 °C
峰值回流温度（摄氏度）：	NOT SPECIFIED	极性/信道类型：	NPN
最大功率耗散 (Abs)：	0.3 W	子类别：	Other Transistors
表面贴装：	YES	处于峰值回流温度下的最长时间：	NOT SPECIFIED
Base Number Matches：	1

L8050HQLT1G 数据手册

通过下载L8050HQLT1G数据手册来全面了解它。这个PDF文档包含了所有必要的细节，如产品概述、功能特性、引脚定义、引脚排列图等信息。

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LESHAN RADIO COMPANY, LTD.

General Purpose Transistors

NPN Silicon

L8050H*LT1

FEATURE

ƽHigh current capacity in compact package.

I_C=1.5A.

ƽEpitaxial planar type.

ƽPNP complement: L8550H

ƽPb-Free Package is available.

SOT–23

DEVICE MARKING AND ORDERING INFORMATION

COLLECTOR

Shipping

Device

Marking

3000/Tape&Reel

L8050HPLT1

1HA

(Pb-Free)

3000/Tape&Reel

L8050HPLT1G

L8050HQLT1

L8050HQLT1G

BASE

1HC

EMITTER

1HC

(Pb-Free)

MAXIMUM RATINGS

Rating

Symbol

Max

Unit

Collector-Emitter Voltage

Collector-Base Voltage

Emitter-Base Voltage

V_CEO

V_CBO

V_EBO

Collector Current-continuoun

1500

mAdc

THERMAL CHARACTERISTICS

Characteristic

Symbol

Max

Unit

Total Device Dissipation FR-5 Board,(1)

=25°C

225

1.8

Derate above 25°C

mW/°C

Thermal Resistance,Junction to Ambient

RθJ A

556

°C/W

Total Device Dissipation

Alumina Substrate,(2) TA=25°C

Derate above 25°C

300

2.4

mW/°C

Thermal Resistance,Junction to Ambient

Junction and Storage Temperature

RθJ A

417

°C/W

°C

-55 to +150

Version 1.1

L8050H*LT1-1/3

LESHAN RADIO COMPANY, LTD.

L8050H*LT1

ELECTRICAL CHARACTERISTICS (T_A=25°C unless otherwise noted)

Characteristic

Symbol

Min

Typ

Max

Unit

OFF CHARACTERISTICS

Collector-Emitter Breakdown Voltage

(I_C=1.0mA)

–

V_(BR)CEO

V_(BR)EBO

V_(BR)CBO

Emitter-Base Breakdown Voltage

(I_E=100µΑ)

Collector-Base Breakdown Voltage

(I_C=100µΑ)

Collector Cutoff Current (V_CB=35V)

Emitter Cutoff Current (V_EB=4V)

I_CBO

I_EBO

–

150

ELECTRICAL CHARACTERISTICS (T

Characteristic

=25°C unless otherwise noted)

Symbol

Min

Typ

Max

Unit

ON CHARACTERISTICS

DC Current Gain

IC=100mA,VCE=1V

h_FE

120

600

0.5

Collector-Emitter Saturation Voltage

(IC=800mA IB=80mA)

VCE(S)

NOTE :

h_FE

120~200

150~300 200~400

300~600

Version 1.1

L8050H*LT1-2/3

LESHAN RADIO COMPANY, LTD.

L8050H*LT1

SOT-23

NOTES:

1. DIMENSIONING AND TOLERANCING PER ANSI

Y14.5M,1982

2. CONTROLLING DIMENSION: INCH.

INCHES

MAX

MILLIMETERS

DIM

MIN

2.80

1.20

0.89

0.37

1.78

0.013

0.085

0.35

0.89

2.10

0.45

MAX

3.04

1.40

1.11

0.50

2.04

0.100

0.177

0.69

1.02

2.64

0.60

0.1102

0.0472

0.0350

0.0150

0.0701

0.0005

0.0034

0.0140

0.0350

0.0830

0.0177

0.1197

0.0551

0.0440

0.0200

0.0807

0.0040

0.0070

0.0285

0.0401

0.1039

0.0236

PIN 1. BASE

2. EMITTER

3. COLLECTOR

0.037

0.95

0.037

0.95

0.079

2.0

0.035

0.9

0.031

0.8

inches

Version 1.1

L8050H*LT1-3/3

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