LBC807-16LT1G [LRC]

General Purpose Transistors PNP Silicon; 通用晶体管PNP硅
LBC807-16LT1G
型号: LBC807-16LT1G
厂家: LESHAN RADIO COMPANY    LESHAN RADIO COMPANY
描述:

General Purpose Transistors PNP Silicon
通用晶体管PNP硅

晶体 晶体管 开关 光电二极管
文件: 总3页 (文件大小:54K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
LESHAN RADIO COMPANY, LTD.  
GeneralPurposeTransistors  
PNPSilicon  
LBC807-16LT1  
LBC807-25LT1  
LBC807-40LT1  
FEATURE  
ƽCollector current capability IC = -500 mA.  
ƽCollector-emitter voltage VCEO(max) = -45 V.  
ƽGeneral purpose switching and amplification.  
ƽNPN complement: LBC817 Series.  
3
ƽPb-Free Package is available.  
1
2
DEVICE MARKING AND ORDERING INFORMATION  
SOT–23  
Device  
Marking  
Shipping  
LBC807-16LT1  
5A  
3000/Tape&Reel  
5A  
(Pb-Free)  
LBC807-16LT1G  
LBC807-25LT1  
LBC807-25LT1G  
LBC807-40LT1  
LBC807-40LT1G  
3000/Tape&Reel  
3000/Tape&Reel  
3000/Tape&Reel  
3000/Tape&Reel  
3000/Tape&Reel  
3
COLLECTOR  
5B  
1
5B  
(Pb-Free)  
BASE  
5C  
2
5C  
(Pb-Free)  
EMITTER  
MAXIMUM RATINGS  
Rating  
Symbol  
V CEO  
Value  
Unit  
Collector–Emitter Voltage  
Collector–Base Voltage  
Emitter–Base Voltage  
–45  
–50  
V
V
V CBO  
V EBO  
–5.0  
–500  
V
Collector Current — Continuous  
I C  
mAdc  
THERMAL CHARACTERISTICS  
Characteristic  
Symbol  
Max  
Unit  
Total Device Dissipation FR– 5 Board, (1)  
TA  
PD  
= 25°C  
225  
1.8  
mW  
mW/°C  
Derate above 25°C  
Thermal Resistance, Junction to Ambient  
Total Device Dissipation  
R θJA  
PD  
556  
°C/W  
Alumina Substrate, (2) TA  
Derate above 25°C  
= 25°C  
300  
2.4  
mW  
mW/°C  
Thermal Resistance, Junction to Ambient  
Junction and Storage Temperature  
R θJA  
417  
°C/W  
T J  
, T stg  
–55 to +150  
°C  
1. FR–5 = 1.0 x 0.75 x 0.062 in.  
2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina.  
LBC807_S-1/3  
LESHAN RADIO COMPANY, LTD.  
LBC807 Series  
ELECTRICAL CHARACTERISTICS (TA  
= 25°C unless otherwise noted.)  
Characteristic  
Symbol  
Min  
Typ  
Max  
Unit  
OFF CHARACTERISTICS  
Collector–Emitter Breakdown Voltage  
(IC = –10 mA)  
V(BR)CEO  
V(BR)CES  
–45  
–50  
–5.0  
V
V
V
Collector–Emitter Breakdown Voltage  
(VEB = 0, IC = –10 µA)  
Emitter–Base Breakdown Voltage  
(IE = –1.0 µA)  
V(BR)EBO  
Collector Cutoff Current  
(VCB = –20 V)  
ICBO  
–100  
–5.0  
nA  
(VCB = –20 V, TJ = 150°C)  
µA  
ELECTRICAL CHARACTERISTICS (TA  
= 25°C unless otherwise noted)  
Characteristic  
Symbol  
Min  
Typ  
Max  
Unit  
ON CHARACTERISTICS  
DC Current Gain  
h FE  
(IC= –100 mA, VCE = –1.0 V)  
LBC807–16  
LBC807–25  
LBC807–40  
100  
250  
160  
250  
40  
400  
600  
(IC = –500 mA, VCE = –1.0 V)  
Collector–Emitter Saturation Voltage  
(IC = –500 mA, IB = –50 mA)  
V CE(sat)  
–0.7  
–1.2  
V
V
Base–Emitter On Voltage  
(IC = –500 mA, IB= –1.0 V)  
V BE(on)  
SMALL–SIGNAL CHARACTERISTICS  
Current–Gain — Bandwidth Product  
f T  
100  
MHz  
pF  
(IC = –10 mA, VCE = –5.0 Vdc, f = 100 MHz)  
Output Capacitance  
C obo  
10  
(VCB = –10 V, f = 1.0 MHz)  
LBC807_S-2/3  
LESHAN RADIO COMPANY, LTD.  
LBC807 Series  
SOT-23  
NOTES:  
A
1. DIMENSIONING AND TOLERANCING PER ANSI  
Y14.5M, 1982.  
L
2. CONTROLLING DIMENSION: INCH.  
3
S
B
1
2
INCHES  
MAX  
MILLIMETERS  
DIM  
MIN  
MIN  
2.80  
1.20  
0.89  
0.37  
1.78  
0.013  
0.085  
0.35  
0.89  
2.10  
0.45  
MAX  
3.04  
1.40  
1.11  
0.50  
2.04  
0.100  
0.177  
0.69  
1.02  
2.64  
0.60  
V
G
A
B
C
D
G
H
J
0.1102  
0.0472  
0.0350  
0.0150  
0.0701  
0.0005  
0.0034  
0.0140  
0.0350  
0.0830  
0.0177  
0.1197  
0.0551  
0.0440  
0.0200  
0.0807  
0.0040  
0.0070  
0.0285  
0.0401  
0.1039  
0.0236  
C
H
J
D
K
L
K
S
V
0.037  
0.95  
0.037  
0.95  
0.079  
2.0  
0.035  
0.9  
0.031  
0.8  
inches  
mm  
LBC807_S-3/3  

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