LBSS5240LT3G [LRC]
General Purpose Transistors;
| 型号： | LBSS5240LT3G |
| 厂家： | 
LESHAN RADIO COMPANY |
| 描述： | General Purpose Transistors |
| 文件： | 总5页 (文件大小：614K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
LESHAN RADIO COMPANY, LTD.
General Purpose Transistors
-40V,-2A Low VCE(sat) PNP Silicon
FEATURES
• Low collector-emitter saturation voltage
• High current capability
• Improved device reliability due to reduced heat
generation
LBSS5240LT1G
S-LBSS5240LT1G
• Replacement for SOT89/SOT223 standard packaged
transistors.
3
• We declare that the material of product compliance with
RoHS requirements.
•
1
S- Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AEC-Q101
Qualified and PPAP Capable.
2
SOT– 23
APPLICATIONS
• Supply line switching circuits
3
COLLECTOR
• Battery management applications
• DC/DC converter applications
• Strobe flash units
1
BASE
• Heavy duty battery powered equipment (motor and lamp
drivers).
2
EMITTER
DESCRIPTION
PNP low VCEsat transistor in a SOT23 plastic package.
NPN complement: LBSS4240LT1G .
ORDERING INFORMATION
Device
Marking
ZF
Shipping
LBSS5240LT1G
3000/Tape & Reel
S-LBSS5240LT1G
ZF
10000/Tape & Reel
LBSS5240LT3G
S-LBSS5240LT3G
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
V
Collector–Emitter Voltage
V CEO
–40
–40
–5.0
–2
Collector–Base Voltage
Emitter–Base Voltage
V CBO
V EBO
I C
V
V
Collector Current — Continuous
A
power dissipation
P D
T j
0.3
W
°C
°C
Junction temperature
Storage temperature
150
T stg
-65 ~+150
THERMAL CHARACTERISTICS
Symbol
Parameter
Conditions
Value
417
Unit
K/W
K/W
in free air;note 1
in free air;note 2
R
thermal resistance from
junction to ambient
th(j-a)
260
Notes:
1.Device mounted on a printed-circuit board,single sided copper,tinplated and standard footprint.
2.Device mounted on a printed-circuit board,single sided copper,tinplated and mounted pad for collector 1 cm.
2
Rev.O 1/5
LESHAN RADIO COM
Y, LTD.
PAN
LBSS5240LT1G,S-LBSS5240LT1G
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted.)
SYMBOL
PARAMETER
CONDITIONS
VCB = −30 V; IE = 0
MIN.
MAX.
UNIT
nA
ICBO
collector-base cut-off current
−
−
−100
IEBO
hFE
emitter-base cut-off current
DC current gain
VBE = −4 V; IC = 0
−100
nA
VCE = −2 V
IC = −100 mA
IC = −500 mA
IC = −1 A
300
260
210
100
−
−
−
−
IC = −2 A
VCEsat
collector-emitter saturation voltage IC = −100 mA; IB = −1 mA
IC = −500 mA; IB = −50 mA
−
−
−
−
−
−100
−110
−225
−225
−350
mV
mV
mV
mV
mV
IC = −750 mA; IB = −15 mA
IC = −1 A; IB = −50 mA
IC = −2 A; IB = −200 mA
VBEsat
base-emitter saturation voltage
base-emitter turn-on voltage
IC = −2 A; IB = −200 mA
−
−
−1.1
−0.75
−
V
V
BE(on)
V
CE
V
C
= −2 V; I = −100 mA
IC = −100 mA; VCE = −10 V;
f = 100 MHz
fT
transition frequency
collector capacitance
100
−
MHz
= −
=
=
Cc
VCB
f = 1 MHz
10 V; IE Ie 0;
28
pF
Rev.O 2/5
LESHAN RADIO COMPANY, LTD.
LBSS5240LT1G,S-LBSS5240LT1G
ELECTRICAL CHARACTERISTIC CURVES
(Ta = 25°C)
VCE=-2V
VCE=-2V
10000
1000
100
1.2
1
0.8
0.6
0.4
0.2
0
10
0.001
0.001
0.01
COLLECTOR CURRENT : IC (A)
Ta=150C
0.1
1
10
0.01
0.1
1
10
COLLECTOR CURRENT : IC (A)
Ta=150C
Ta=-55C
Ta=25C
Ta=-55C
Ta=25C
Fig.2 BASE-EMITTER TURN-ON VOLTAGE
VS.COLLECTOR CURRENT
Fig.1 DC CURRENT GAIN VS.COLLECTOR
CURRENT
IC/IB=20
IC/IB=20
10
1000
100
10
1
0.1
0.0001
0.001
0.01
0.1
1
10
0.0001
0.001
COLLECTOR CURRENT : IC (A)
Ta=-55C Ta=150C
0.01
0.1
1
10
COLLECTOR CURRENT : IC (A)
Ta=150C
Ta=25C
Ta=-55C
Ta=25C
Fig.4 BASE-EMITTER SATURATION
VOLTAGE VS.COLLECTOR CURRENT
Fig.3 COLLECTOR-EMITTER SATURATION
VOLTAGE VS.COLLECTOR CURRENT
Rev.O 3/5
LESHAN RADIO COMPANY, LTD.
LBSS5240LT1G,S-LBSS5240LT1G
ELECTRICAL CHARACTERISTIC CURVES
(Ta = 25°C)
IC/IB=20
3
2
1
0
1000
100
10
1
0.1
0.0001
0.001
0.01
0.1
1
10
0
1
2
3
4
5
COLLECTOR CURRENT : IC (A)
COLLECTOR-EMITTER VOLTAGE : VCE (V)
IB=-6mA
IB=-8mA
IB=-16mA
IB=-4mA
IB=-2mA
Ta=150C
Ta=-55C
Ta=25C
IB=-12mA
IB=-20mA
IB=-14mA
IB=-10mA
IB=-18mA
Fig.6 COLLECTOR-EMITTER SATURATION
RESISTANCE VS.COLLECTOR CURRENT
Fig.5 COLLECTOR CURRENT VS.COLLECTOR-
EMITTER SATURATION VOLTAGE
Rev.O 4/5
LESHAN RADIO COMPANY, LTD.
LBSS5240LT1G,S-LBSS5240LT1G
SOT-23
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M,1982
A
L
2. CONTROLLING DIMENSION: INCH.
3
INCHES
MAX
MILLIMETERS
DIM
S
B
MIN
MIN
2.80
1.20
0.89
0.37
1.78
0.013
0.085
0.35
0.89
2.10
0.45
MAX
3.04
1.40
1.11
0.50
2.04
0.100
0.177
0.69
1.02
2.64
0.60
1
2
A
B
C
D
G
H
J
0.1102
0.0472
0.0350
0.0150
0.0701
0.0005
0.0034
0.0140
0.0350
0.0830
0.0177
0.1197
0.0551
0.0440
0.0200
0.0807
0.0040
0.0070
0.0285
0.0401
0.1039
0.0236
V
G
C
K
L
H
J
D
K
S
V
0.037
0.95
0.037
0.95
0.079
2.0
0.035
0.9
0.031
0.8
inches
mm
Rev.O 5/5
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